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71. 发明授权

US08107354B2 Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head 失效
标题翻译：电场读/写头，其制造方法以及包括电场读/写头的信息存储装置
公开(公告)号：US08107354B2
公开(公告)日：2012-01-31
申请号：US12038878
申请日：2008-02-28
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Chul-min Park , Dae-young Jeon
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Chul-min Park , Dae-young Jeon
IPC分类号： G11B5/187 , G11B9/02
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1409
摘要： An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.
摘要翻译：提供电场读/写头，制造电场读/写头的方法，以及包括电场读/写头的信息存储装置。电场读/写头包括：具有面向记录介质的第一表面和垂直于第一表面的第二表面的基板; 以及形成在所述第二表面上并且具有面向所述记录介质的至少一部分的突起，其中包括源极，漏极和沟道的电阻传感器包括在所述突起中。绝缘层和电场屏蔽层分别进一步依次形成在突起的相对侧上，并且电场屏蔽层中的至少一个是写入电极。

72. 发明授权

US07994499B2 Semiconductor probe having wedge shape resistive tip and method of fabricating the same 有权
标题翻译：具有楔形电阻尖端的半导体探针及其制造方法
公开(公告)号：US07994499B2
公开(公告)日：2011-08-09
申请号：US11750404
申请日：2007-05-18
申请人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park
发明人： Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Hong-sik Park , Chul-min Park
IPC分类号： H01L21/00
CPC分类号： G01Q60/30 , G01Q60/40
摘要： A semiconductor probe having a wedge shape resistive tip and a method of fabricating the semiconductor probe is provided. The semiconductor probe includes a resistive tip that is doped with a first impurity, has a resistance region doped with a low concentration of a second impurity having an opposite polarity to the first impurity, and has first and second semiconductor electrode regions doped with a high concentration of the second impurity on both side slopes of the resistive tip. The probe also includes a cantilever having the resistive tip on an edge portion thereof, and an end portion of the resistive tip has a wedge shape.
摘要翻译：提供具有楔形电阻端头的半导体探针和制造半导体探针的方法。半导体探针包括掺杂有第一杂质的电阻尖端，具有掺杂有与第一杂质具有相反极性的低浓度第二杂质的电阻区域，并且具有掺杂高浓度的第一和第二半导体电极区域的第二杂质在电阻尖端的两个侧面上。探针还包括在其边缘部分具有电阻尖端的悬臂，并且电阻尖端的端部具有楔形。

73. 发明授权

US07923262B2 Method of manufacturing patterned ferroelectric media 失效
标题翻译：图案化铁电介质的制造方法
公开(公告)号：US07923262B2
公开(公告)日：2011-04-12
申请号：US11384326
申请日：2006-03-21
申请人： Simon Buehlmann , Seung-bum Hong
发明人： Simon Buehlmann , Seung-bum Hong
IPC分类号： H01L21/00
CPC分类号： G11B5/743 , B82Y10/00 , G11B9/02 , G11B9/149
摘要： A method of manufacturing patterned ferroelectric media, which includes forming an electrode on a substrate; forming features having a predetermined pattern on the electrode, the features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. Also disclosed is a method which includes forming on a substrate an electrode having wells and precursor features formed in the wells of the electrode, the precursor features including a precursor for forming a ferroelectric material; and reacting a source material with the precursor features to transform the precursor features into ferroelectric features. The above first embodiment relates to non-embedded type media, and the above second embodiment relates to embedded type media.
摘要翻译：一种制造图案化铁电介质的方法，其包括在基底上形成电极; 在电极上形成具有预定图案的特征，所述特征包括用于形成铁电材料的前体; 并使源材料与前体特征反应以将前体特征转变成铁电特征。还公开了一种方法，其包括在基板上形成具有形成在所述电极的阱中的阱和前体特征的电极，所述前体特征包括用于形成铁电材料的前体; 并使源材料与前体特征反应以将前体特征转变成铁电特征。上述第一实施例涉及非嵌入式介质，并且上述第二实施例涉及嵌入式介质。

74. 发明授权

US07885169B2 Electric field sensor having vertical structure, fabrication method thereof, and storage unit using the same 有权
标题翻译：具有垂直结构的电场传感器，其制造方法和使用该电场传感器的存储单元
公开(公告)号：US07885169B2
公开(公告)日：2011-02-08
申请号：US12138055
申请日：2008-06-12
申请人： Simon Buehlmann , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
发明人： Simon Buehlmann , Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong
IPC分类号： G11B7/00
CPC分类号： G11B9/02 , B82Y10/00 , G11B9/1409
摘要： An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.
摘要翻译：电场传感器包括具有掺杂有作为衬底的顶层的高密度掺杂剂的低电阻半导体层的衬底，掺杂有低密度掺杂剂的高电阻半导体层，位于部分低电阻半导体层上的区域和位于高电阻半导体层上的导电层，其中通过流过低电阻半导体层，高电阻半导体层和电阻半导体层的电流的变化来检测电场的变化，导电层。

75. 发明授权

US07693028B2 Method and apparatus for detecting probe position error in a data storage system and method and apparatus for tracking data 失效
标题翻译：用于检测数据存储系统中的探针位置误差的方法和装置以及用于跟踪数据的方法和装置
公开(公告)号：US07693028B2
公开(公告)日：2010-04-06
申请号：US11143478
申请日：2005-06-03
申请人： Dong-ki Min , Seung-bum Hong
发明人： Dong-ki Min , Seung-bum Hong
IPC分类号： G11B7/00 , G11B9/00
CPC分类号： G11B9/1454 , B82Y10/00
摘要： An apparatus for detecting a probe position error includes a position error extracting unit extracting probe position errors from signals detected by a probe; a position error adding unit calculating the probe position errors in units of a predetermined time; and a signal processing unit storing a past probe position error calculated by the position error extracting unit and generating a probe position error by processing the past probe position error and a current probe position error. An apparatus for tracking data includes a scanner moving a data storage medium; a probe detecting the signals from a data storage medium; an error detector detecting probe position errors in a half-period of an error extracting signal by applying the error extracting signal used to extract the probe position errors to the signal detected by the probe; and a compensator compensating for the probe position errors detected by the error detector.
摘要翻译：用于检测探头位置误差的装置包括位置误差提取单元，从由探针检测的信号中提取探针位置误差; 位置误差添加单元，以预定时间为单位计算探测位置误差; 以及信号处理单元，存储由位置误差提取单元计算出的过去的探针位置误差，并通过处理过去的探针位置误差和当前探针位置误差来产生探针位置误差。一种用于跟踪数据的装置包括扫描仪移动数据存储介质; 检测来自数据存储介质的信号的探针; 误差检测器通过将用于提取探针位置误差的误差提取信号应用于由探针检测的信号，检测误差提取信号的半周期中的探测器位置误差; 以及补偿器，用于补偿由误差检测器检测到的探头位置误差。

76. 发明授权

US07687838B2 Resistive memory device having array of probes and method of manufacturing the resistive memory device 失效
标题翻译：具有探针阵列的电阻式存储器件和制造该阻性存储器件的方法
公开(公告)号：US07687838B2
公开(公告)日：2010-03-30
申请号：US11240570
申请日：2005-10-03
申请人： Seung-bum Hong , Ju-hwan Jung , Hyoung-soo Ko , Hong-sik Park , Dong-ki Min , Eun-sik Kim , Chul-min Park , Sung-dong Kim , Kyoung-lock Baeck
发明人： Seung-bum Hong , Ju-hwan Jung , Hyoung-soo Ko , Hong-sik Park , Dong-ki Min , Eun-sik Kim , Chul-min Park , Sung-dong Kim , Kyoung-lock Baeck
IPC分类号： H01L21/66 , H01L21/00 , G11B9/00 , G11B3/00 , G11B11/00
CPC分类号： H01L27/101 , B82Y10/00 , G11B9/02 , G11C11/22
摘要： Provided are a resistive memory device having a probe array and a method of manufacturing the same. The resistive memory device includes a memory part having a bottom electrode and a ferroelectric layer sequentially formed on a first substrate; a probe part having an array of resistive probes arranged on a second substrate, with the tips of the resistive probes facing the ferroelectric layer so as to write and read data on the ferroelectric layer; and a binding layer which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the ferroelectric layer.
摘要翻译：提供了具有探针阵列的电阻式存储器件及其制造方法。电阻式存储器件包括一个存储器部分，其具有顺序地形成在第一衬底上的底部电极和铁电层; 探针部分，其具有布置在第二基板上的电阻式探针阵列，其中所述电阻式探针的尖端面对强电介质层，以便在铁电层上写入和读取数据; 以及在铁电层上或上方抓住并固定电阻式探头的结合层。制造电阻式存储器件的方法包括在第一衬底上依次形成底电极和铁电层; 在第二衬底上形成电阻性探针阵列; 并且使用结合层将第一衬底与第二衬底结合到晶片级，使得电阻探针的尖端面对强电介质层。

77. 发明授权

US07602202B2 Semiconductor probe with high resolution resistive tip having doping control layer and method of fabricating the same 失效
标题翻译：具有掺杂控制层的高分辨率电阻尖端的半导体探针及其制造方法
公开(公告)号：US07602202B2
公开(公告)日：2009-10-13
申请号：US11652596
申请日：2007-01-12
申请人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
发明人： Ju-hwan Jung , Jun-soo Kim , Hyung-cheol Shin , Seung-bum Hong
IPC分类号： G01R31/02 , G01R31/26
CPC分类号： G11B9/1409 , B82Y10/00 , G11B9/149
摘要： A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.
摘要翻译：提供半导体探针及其制造方法。半导体探针包括掺杂有第一杂质的悬臂，从悬臂的端部突出并与第二杂质轻微掺杂的电阻尖端，形成在电阻尖端的突出部分两侧的掺杂控制层，以及第一和第二电极形成在掺杂控制层下面并且与第二杂质大量掺杂的区域。

78. 发明申请

US20090103204A1 BIT PATTERNED MEDIUM HAVING SUPER-TRACK, METHOD OF TRACKING TRACK OF BIT PATTERNED MEDIUM, HEAD APPROPRIATE FOR BIT PATTERNED MEDIUM, AND INFORMATION RECORDING/REPRODUCING APPARATUS INCLUDING BIT PATTERNED MEDIUM HEAD 失效
标题翻译：具有超级轨迹的位图形图案，跟踪图形轨迹的方法，适用于位图的中等尺寸的信息记录/再现装置，包括位图形图
公开(公告)号：US20090103204A1
公开(公告)日：2009-04-23
申请号：US12111217
申请日：2008-04-29
申请人： Dong-ki MIN , Seung-bum Hong
发明人： Dong-ki MIN , Seung-bum Hong
IPC分类号： G11B5/596 , G11B5/82 , G11B5/127
CPC分类号： G11B5/59688 , B82Y10/00 , G11B5/743 , G11B5/82
摘要： Provided are a bit patterned medium having a super-track, a method of tracking a track of the bit patterned medium, a head appropriate for the bit patterned medium, and an information recording/reproducing apparatus including the bit patterned medium and the head. The bit patterned medium includes a substrate, and a recording layer comprised of a plurality of bit cells which are formed on the substrate by being separated from each other, along a plurality of tracks. Each of the plurality of tracks includes a super-track comprised of a plurality of sub-tracks. Bit cells formed on a sub-track from among the plurality of sub-tracks in the super-track are disposed so as to deviate from bit cells formed on another sub-track from among the plurality of sub-tracks in the super-track. A track ID (identification) for recognizing the super-track, and a servo burst generating a position error signal when a head tracks the super-track, are arranged in an area of each of the plurality of tracks. Meanwhile, the head includes a writing head recording information in units of sub-tracks, and a reading sensor reproducing the information in units of super-tracks.
摘要翻译：提供了具有超轨迹的位图形介质，跟踪位图形介质的轨迹的方法，适用于位图形介质的头，以及包括位图形介质和头的信息记录/再现设备。位图案化介质包括衬底，以及由多个位单元构成的记录层，它们通过沿着多个轨道彼此分离而形成在衬底上。多个轨道中的每一个包括由多个子轨道组成的超轨道。在超轨道中的多个子轨道中的子轨道上形成的比特单元被布置成偏离在超轨道中的多个子轨道中形成在另一个子轨道上的比特单元。用于识别超轨道的轨道ID（识别）以及当磁头跟踪超轨迹时产生位置误差信号的伺服脉冲串被布置在多个磁道中的每一个的区域中。同时，头包括以子轨为单位记录信息的写入头，以及以超轨为单位再现信息的读取传感器。

79. 发明申请

US20090090936A1 ELECTRIC FIELD READ/WRITE HEAD, METHOD OF MANUFACTURING THE SAME, AND INFORMATION STORAGE DEVICE COMPRISING ELECTRIC FIELD READ/WRITE HEAD 失效
标题翻译：电场读/写头，其制造方法和包含电场读/写头的信息存储装置
公开(公告)号：US20090090936A1
公开(公告)日：2009-04-09
申请号：US12120816
申请日：2008-05-15
申请人： Ju-hwan JUNG , Hyoung-soo Ko , Seung-bum Hong
发明人： Ju-hwan JUNG , Hyoung-soo Ko , Seung-bum Hong
IPC分类号： H01L29/772 , H01L21/336 , H01S5/00 , G11B9/00
CPC分类号： G11B9/02 , H01L29/66462 , H01L29/7785 , H01L29/7787
摘要： Provided is an electric field head including a resistance sensor to read information recorded on a recording medium. The resistance sensor includes a first semiconductor layer including a source and a drain, and a second semiconductor layer that is heterogeneously combined with the first semiconductor layer. Also, the electric field head further includes a channel between the source and the drain, in a junction region of the first and second semiconductor layers.
摘要翻译：提供了一种电场头，其包括用于读取记录在记录介质上的信息的电阻传感器。电阻传感器包括包括源极和漏极的第一半导体层以及与第一半导体层非均匀组合的第二半导体层。此外，电场头还包括在第一和第二半导体层的结区中的源极和漏极之间的沟道。

80. 发明申请

US20080109182A1 METHOD AND APPARATUS FOR CALIBRATING POSITION OF IMAGE SENSOR, AND METHOD OF DETECTING POSITION OF IMAGE SENSOR 有权
标题翻译：用于校准图像传感器位置的方法和装置，以及检测图像传感器位置的方法
公开(公告)号：US20080109182A1
公开(公告)日：2008-05-08
申请号：US11828516
申请日：2007-07-26
申请人： Dong-ki Min , Sung-hoon Choa , Seung-bum Hong
发明人： Dong-ki Min , Sung-hoon Choa , Seung-bum Hong
IPC分类号： G01C25/00
CPC分类号： H04N5/349
摘要： A method and apparatus for calibrating a position of an image sensor, and a method of detecting the position of an image sensor are provided. The method of calibrating the position of an image sensor includes: obtaining first image information corresponding to a first position of the image sensor and obtaining second image information corresponding to a second position of the image sensor, calculating cross-correlation values between the obtained first image information and second image information; determining whether or not the calculated cross-correlation values are symmetrical; setting a driving power value of the image sensor for moving the image sensor the distance between the first position to the second position as a reference driving power value for moving the image sensor one-pixel distance, if it is determined that the cross-correlation values are not symmetrical; and calibrating the position of the image sensor by using the set driving power value.
摘要翻译：提供了用于校准图像传感器的位置的方法和装置以及检测图像传感器的位置的方法。校准图像传感器的位置的方法包括：获得与图像传感器的第一位置相对应的第一图像信息，并获得与图像传感器的第二位置对应的第二图像信息，计算所获得的第一图像之间的互相关值信息和第二图像信息; 确定所计算的互相关值是否对称; 设置图像传感器的驱动功率值，用于将图像传感器的距离移动到第一位置与第二位置之间，作为用于使图像传感器移动一像素距离的基准驱动功率值，如果确定互相关值不对称并使用设定的驱动功率值来校准图像传感器的位置。

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