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    • 71. 发明授权
    • Tributary unit signal cross-connection apparatus
    • 支路单元信号交叉连接装置
    • US5914952A
    • 1999-06-22
    • US758257
    • 1996-11-27
    • Doo Seop EomSung Hyuk ChoiSung Eun JinJe Soo KoJong Hyun Lee
    • Doo Seop EomSung Hyuk ChoiSung Eun JinJe Soo KoJong Hyun Lee
    • H04L12/933H04Q11/04H04L12/50
    • H04L49/101H04J2203/0007
    • A cross-connection apparatus for tributary unit-12 signal included in a synchronous transfer module-N signal used as a connection signal between synchronous digital hierarchy network nodes, is provided, including, an input/output and tributary unit time switching means for receiving a signal structured in the form of a frame (HEBUS) made up with an administration unit 3 signal, identifier byte and bit interleaved parity byte, performing an administration unit 3 pointer processing, virtual container 3 path overhead processing and tributary unit-12 pointer processing in order to be connected to the switching network, and thus performing a tributary unit-12 unit switching function; and a space switching means for receiving a frame (LBUS) made up with the tributary unit-12 signal, identifier byte and bit interleaved parity byte, namely, an LBUS signal, from the input/output and tributary unit time switching means, the means performing and outputting a space switching operation with the signal.
    • 提供了包括在用作同步数字分层网络节点之间的连接信号的同步传输模块-N信号中的支流单元12信号的交叉连接装置,包括:输入/输出和支路单元时间切换装置, 由管理单元3信号,标识符字节和比特交织奇偶校验字节构成的帧(HEBUS)形式的信号,执行管理单元3指针处理,虚拟容器3路径开销处理和支持单元12指针处理 顺序连接到交换网络,从而执行支路单元12单元切换功能; 以及空间切换装置,用于从输入/输出和支路单元时间切换装置接收由辅助单元12信号,标识符字节和比特交织的奇偶校验字节(即LBUS信号)构成的帧(LBUS),该装置 执行并输出具有该信号的空间切换操作。
    • 75. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US08779412B2
    • 2014-07-15
    • US13553344
    • 2012-07-19
    • Sang Heon HanDo Young RheeJong Hyun LeeJin Young LimYoung Sun Kim
    • Sang Heon HanDo Young RheeJong Hyun LeeJin Young LimYoung Sun Kim
    • H01L33/00H01L29/06
    • H01L33/06H01L33/32
    • There is provided a semiconductor light emitting device including: first and second conductivity type semiconductor layers; and an active layer disposed between the first and second conductivity type semiconductor layers and having a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately disposed, wherein at least one of the plurality of quantum well layers includes a first region in which band gap energy is reduced through a first slope and a second region in which band gap energy is reduced through a second slope different from the first slope. The influence of polarization is minimized by adjusting the shape of the band gap of the quantum well layer, crystallinity and internal quantum efficiency can be enhanced.
    • 提供一种半导体发光器件,包括:第一和第二导电类型半导体层; 以及设置在第一和第二导电类型半导体层之间并且具有多个量子势垒层和多个量子阱层交替设置的结构的有源层,其中多个量子阱层中的至少一个包括 带隙能量通过第一斜率​​减小的第一区域和通过不同于第一斜率的第二斜率使带隙能量减小的第二区域。 通过调整量子阱层的带隙的形状,极化的影响被最小化,可以提高结晶度和内部量子效率。
    • 76. 发明授权
    • Method of fabricating semiconductor light emitting device
    • 制造半导体发光器件的方法
    • US08709839B2
    • 2014-04-29
    • US13493342
    • 2012-06-11
    • Jong Hyun LeeDong Ju LeeYoung Sun Kim
    • Jong Hyun LeeDong Ju LeeYoung Sun Kim
    • H01L21/00
    • H01L33/0079
    • There is provided a method of fabricating a semiconductor light emitting device, including: forming a sacrificial layer having a plurality of nanostructures on a growth substrate; forming a protective layer to cover the sacrificial layer; forming a light emitting structure by allowing a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer to be sequentially grown on the protective layer; etching the protective layer to expose the nanostructures; and separating the light emitting structure from the growth substrate by etching the exposed nanostructures, whereby damage and degradation of a light emitting structure at the time of the separation thereof may be prevented.
    • 提供一种制造半导体发光器件的方法,包括:在生长衬底上形成具有多个纳米结构的牺牲层; 形成保护层以覆盖牺牲层; 通过允许第一导电半导体层,有源层和第二导电半导体层在保护层上顺序生长来形成发光结构; 蚀刻保护层以暴露纳米结构; 并且通过蚀刻暴露的纳米结构将发光结构与生长衬底分离,从而可以防止发光结构在其分离时的损坏和劣化。
    • 80. 发明授权
    • Camera module with first and second image sensor chips, holders and lens
    • 相机模块具有第一和第二图像传感器芯片,支架和透镜
    • US07539412B2
    • 2009-05-26
    • US11435540
    • 2006-05-17
    • Jong Hyun LeeDong Seok Jeon
    • Jong Hyun LeeDong Seok Jeon
    • G03B17/00
    • G03B17/02
    • The present invention relates to a camera module and a manufacturing method thereof, in which both front and rear directions can be provided by improving the disadvantage of the existing camera module providing only one direction photographing. According to an embodiment of the present invention, the camera module includes first and second image sensor chips whose rear surfaces are adhered by a nonconductive bonding agent so that image region parts face opposite directions, a substrate that is connected to the first image sensor chip using bumps for signal connection and connected to the second image sensor chip using wires for signal connection, a through-hole being formed in the substrate under a region in which the first image sensor chip is mounted, an infrared-shielding filter installed in the through-hole of the substrate, first and second holders disposed on upper and lower sides of the substrate, and first and second lens disposed in the first and second holders, respectively.
    • 相机模块及其制造方法技术领域本发明涉及一种摄像机模块及其制造方法,其中通过改善仅提供一个方向拍摄的现有相机模块的缺点,可以提供前后两个方向。 根据本发明的实施例,相机模块包括第一和第二图像传感器芯片,其后表面通过非导电粘合剂粘附,使得图像区域部分面向相反方向,基板使用第一图像传感器芯片 用于信号连接的凸块,并且使用用于信号连接的导线连接到第二图像传感器芯片,在安装有第一图像传感器芯片的区域下的基板中形成通孔,安装在通孔中的红外线屏蔽滤波器, 设置在基板的上侧和下侧的第一和第二保持器以及分别设置在第一和第二支架中的第一和第二透镜。