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71. 外观设计

USD337980S Snowboard carrier for attachment to a vehicle roof rack 失效
公开(公告)号：USD337980S
公开(公告)日：1993-08-03
申请号：US558187
申请日：1990-07-26
申请人： Daniel Ng
设计人： Daniel Ng

72. 发明授权

US09252239B2 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts 有权
标题翻译：采用自对准工艺制造的半导体功率器件和更可靠的电触点
公开(公告)号：US09252239B2
公开(公告)日：2016-02-02
申请号：US14292880
申请日：2014-05-31
申请人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
发明人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
IPC分类号： H01L21/8234 , H01L29/66 , H01L29/423 , H01L29/40 , H01L29/78
CPC分类号： H01L29/4236 , H01L21/26586 , H01L21/823487 , H01L27/0255 , H01L27/0727 , H01L29/0619 , H01L29/1095 , H01L29/407 , H01L29/4238 , H01L29/4975 , H01L29/66136 , H01L29/66143 , H01L29/665 , H01L29/66666 , H01L29/66674 , H01L29/66734 , H01L29/7804 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7827 , H01L29/861 , H01L29/872 , H01L29/8725
摘要： This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.
摘要翻译：本发明公开了一种半导体功率器件，其包括设置在半导体衬底的顶表面附近的多个顶部电端子。顶部电气端子中的每一个包括在半导体衬底的顶表面附近形成为硅化物接触层的端子接触层。半导体功率器件的沟槽栅极从半导体衬底的顶表面打开，并且每个沟槽栅极包括被配置为硅化物接触层的硅化物层，硅化物层设置在略微低于半导体衬底的顶表面围绕沟槽栅极。

73. 发明授权

US08034963B2 Process for refining fats and oils 有权
标题翻译：炼油和油脂的工艺
公开(公告)号：US08034963B2
公开(公告)日：2011-10-11
申请号：US12279205
申请日：2007-02-09
申请人： Daniel Ng
发明人： Daniel Ng
IPC分类号： C07C51/42 , C11B3/04 , C11B3/10 , C10G25/00 , C10G17/00 , B01D19/00
CPC分类号： C11B3/14 , C11B3/001 , C11C1/02
摘要： The present invention relates to a process for cooling fatty acid distillate from scrubbing section in a fats and oils refinery comprising cooling the fatty acid distillate by heat recovery in at least one heat-exchanging zone with refined oils having a temperature above about 50° C. heating the refined fats and oils to a temperature above about 70° C. The present invention relates further to a process for refining crude fats and oils, and refining plant for refining crude fats and oils.
摘要翻译：本发明涉及一种从脂肪和精油炼油厂的洗涤部分冷却脂肪酸馏出物的方法，包括通过在至少一个热交换区中与温度高于约50℃的精制油进行热回收来冷却脂肪酸馏出物。将精炼的脂肪和油加热至高于约70℃的温度。本发明还涉及精炼粗脂肪和油的方法，以及用于精制粗脂肪和油的精制装置。

74. 发明授权

US5929481A High density trench DMOS transistor with trench bottom implant 失效
标题翻译：高密度沟槽DMOS晶体管，具有沟槽底部植入
公开(公告)号：US5929481A
公开(公告)日：1999-07-27
申请号：US964419
申请日：1997-11-04
申请人： Fwu-Iuan Hshieh , Brian H. Floyd , Mike F. Chang , Danny Nim , Daniel Ng
发明人： Fwu-Iuan Hshieh , Brian H. Floyd , Mike F. Chang , Danny Nim , Daniel Ng
IPC分类号： H01L21/336 , H01L29/08 , H01L29/10 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/1095 , H01L29/0878 , H01L29/7813
摘要： A trenched DMOS transistor overcomes the problem of a parasitic JFET at the trench bottom (caused by deep body regions extending deeper than the trench) by providing a doped trench bottom implant region at the bottom of the trench and extending into the surrounding drift region. This trench bottom implant region has the same doping type, but is more highly doped, than the surrounding drift region. The trench bottom implant region significantly reduces the parasitic JFET resistance by optimizing the trench bottom implant dose, without creating reliability problems.
摘要翻译：沟槽DMOS晶体管通过在沟槽的底部提供掺杂的沟槽底部注入区域并延伸到周围的漂移区域来克服沟槽底部的寄生JFET（由深沟槽深度延伸的深度）引起的问题。该沟槽底部注入区域具有与周围漂移区域相同的掺杂类型，但是掺杂度更高。通过优化沟槽底部注入剂量，沟槽底部注入区域显着降低寄生JFET电阻，而不会产生可靠性问题。

75. 发明授权

US5690429A Method and apparatus for emissivity independent self-calibrating of a multiwavelength pyrometer 失效
标题翻译：用于多波长高温计的发射率独立自校准的方法和装置
公开(公告)号：US5690429A
公开(公告)日：1997-11-25
申请号：US783640
申请日：1997-01-14
申请人： Daniel Ng
发明人： Daniel Ng
IPC分类号： G01J5/60 , G01K15/00 , G01J5/00
CPC分类号： G01J5/60 , G01J5/522 , G01J5/524 , G01J2005/0048
摘要： Self calibrating a pyrometer includes taking two different temperatures thereby generating two voltage spectra, calculating the spectra ratio R of the two voltage spectra, determining the slope of the plot of the logarithm of the spectrum ratio versus c.sub.2 /.lambda. to arrive at a relationship between T.sub.1 and T.sub.2, solving for T.sub.1 within the spectra ratio, and arriving at a value for T.sub.2 by substituting experimentally measured values for R into the spectra ratio equation. This method is then repeated for the determination of T.sub.2. The pyrometer calibration constant h.sub..lambda. can then be determined by dividing the measured voltage spectra by the planck function at the known temperature (i.e., T.sub.1 or T.sub.2). Measurement of subsequent temperatures can now be determined by measuring the voltage spectra and dividing by the calibration constant h.sub..lambda. which will result in a planck function L.sub..lambda. (T) which can be solved to yield the surface temperature.
摘要翻译：自校准高温计包括采取两个不同的温度，从而产生两个电压谱，计算两个电压光谱的光谱比R，确定光谱比对数相对于c2 /λ的对数曲线的斜率，得到T1 和T2，在光谱比内求解T1，并将R的实验测量值代入光谱比方程，达到T2值。然后重复该方法以确定T2。然后可以通过将测量的电压谱除以在已知温度（即T1或T2）下的平板功能来确定高温计校准常数hλ。随后的温度的测量现在可以通过测量电压谱和除以校准常数hλ来确定，这将导致可以解决以产生表面温度的平面函数L lambda（T）。

76. 发明授权

US5511894A Lockable quick release mechanism 失效
标题翻译：可锁定快速释放机构
公开(公告)号：US5511894A
公开(公告)日：1996-04-30
申请号：US292182
申请日：1994-08-19
申请人： Daniel Ng
发明人： Daniel Ng
IPC分类号： B62H3/04 , B60R9/048 , B60R9/10 , B62H3/00 , B62H3/08 , B62H5/00 , F16B2/18
CPC分类号： B62H5/001 , B60R9/048 , B60R9/10 , B62H3/00 , Y10S224/924 , Y10T403/58 , Y10T403/589 , Y10T403/598
摘要： In a quick release mechanism, a prong is retained around a skewer, the skewer extending from a fork block, between a bearing surface on the fork block and a bearing surface on a movable member. The movable member is mounted on the skewer and is axially movable thereon. The movable member is moved toward the fork block through a predetermined distance by a moving device which is mounted on the skewer and is axially movable relative thereto. The range of movement of the moving device is adjusted by an adjusting knob which is positioned at various axial positions on the skewer.
摘要翻译：在快速释放机构中，叉子围绕叉子保持，扦子从叉块延伸，在叉块上的支承表面和可移动构件上的支承表面之间。可动构件安装在串上并且可轴向移动。可移动部件通过安装在扦子上并可相对于其轴向移动的移动装置朝向叉块移动预定距离。移动装置的移动范围通过调节旋钮来调节，调节旋钮位于串上的各种轴向位置。

77. 发明申请

US20150349091A1 SEMICONDUCTOR POWER DEVICES MANUFACTURED WITH SELF-ALIGNED PROCESSES AND MORE RELIABLE ELECTRICAL CONTACTS 审中-公开
标题翻译：具有自对准工艺和更可靠的电气联系的半导体功率器件
公开(公告)号：US20150349091A1
公开(公告)日：2015-12-03
申请号：US14292880
申请日：2014-05-31
申请人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
发明人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
IPC分类号： H01L29/66 , H01L29/40 , H01L29/423
CPC分类号： H01L29/4236 , H01L21/26586 , H01L21/823487 , H01L27/0255 , H01L27/0727 , H01L29/0619 , H01L29/1095 , H01L29/407 , H01L29/4238 , H01L29/4975 , H01L29/66136 , H01L29/66143 , H01L29/665 , H01L29/66666 , H01L29/66674 , H01L29/66734 , H01L29/7804 , H01L29/7806 , H01L29/7811 , H01L29/7813 , H01L29/7827 , H01L29/861 , H01L29/872 , H01L29/8725
摘要： This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.
摘要翻译：本发明公开了一种半导体功率器件，其包括设置在半导体衬底的顶表面附近的多个顶部电端子。顶部电气端子中的每一个包括在半导体衬底的顶表面附近形成为硅化物接触层的端子接触层。半导体功率器件的沟槽栅极从半导体衬底的顶表面打开，并且每个沟槽栅极包括被配置为硅化物接触层的硅化物层，硅化物层设置在略微低于半导体衬底的顶表面围绕沟槽栅极。

78. 发明申请

US20110291186A1 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts 有权
标题翻译：采用自对准工艺制造的半导体功率器件和更可靠的电触点
公开(公告)号：US20110291186A1
公开(公告)日：2011-12-01
申请号：US12802185
申请日：2010-06-01
申请人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
发明人： Hamza Yilmaz , John Chen , Daniel Ng , Wenjun Li
IPC分类号： H01L29/78 , H01L21/28 , H01L27/088
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0692 , H01L29/0696 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/456 , H01L29/47 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7808 , H01L29/7811 , H01L29/866 , H01L29/872 , H01L29/8725
摘要： This invention discloses semiconductor power device that includes a plurality of top electrical terminals disposed near a top surface of a semiconductor substrate. Each and every one of the top electrical terminals comprises a terminal contact layer formed as a silicide contact layer near the top surface of the semiconductor substrate. The trench gates of the semiconductor power device are opened from the top surface of the semiconductor substrate and each and every one of the trench gates comprises the silicide layer configured as a recessed silicide contact layer disposed on top of every on of the trench gates slightly below a top surface of the semiconductor substrate surround the trench gate.
摘要翻译：本发明公开了一种半导体功率器件，其包括设置在半导体衬底的顶表面附近的多个顶部电端子。顶部电气端子中的每一个包括在半导体衬底的顶表面附近形成为硅化物接触层的端子接触层。半导体功率器件的沟槽栅极从半导体衬底的顶表面打开，并且每个沟槽栅极包括被配置为硅化物接触层的硅化物层，硅化物层设置在略微低于半导体衬底的顶表面围绕沟槽栅极。

79. 发明授权

US07090491B2 Single-dose dental adhesive delivery system and method 有权
标题翻译：单剂量牙科粘合剂输送系统及方法
公开(公告)号：US07090491B2
公开(公告)日：2006-08-15
申请号：US10292206
申请日：2002-11-12
申请人： Stephen R. Higgins, Jr. , Daniel Ng
发明人： Stephen R. Higgins, Jr. , Daniel Ng
IPC分类号： A61C17/00
CPC分类号： A61C5/60
摘要： A dispenser has first and second reservoirs configured to contain first and second components of a single dose of a multi-component dental adhesive. The reservoirs are sealed by closures which are slidably received in the reservoirs. When the closures are moved from first positions to second positions, the contents of the reservoirs may be accessed with an adhesive applicator. An applicator configured to be used with the dispenser has a collar spaced from a tip of the applicator, whereby the applicator may be used to move the closures while ensuring that the tip does not contact the closures.
摘要翻译：分配器具有构造成容纳单剂量的多组分牙科粘合剂的第一和第二组分的第一和第二储存器。储存器被可滑动地容纳在储存器中的封闭件密封。当封闭件从第一位置移动到第二位置时，可以使用粘合剂施加器来访问储存器的内容物。构造成与分配器一起使用的施用器具有与施用器的尖端间隔开的套环，由此施用器可以用于移动封闭件，同时确保尖端不接触封闭件。

80. 发明申请

US20050238010A1 Programmable packet parsing processor 有权
标题翻译：可编程数据包解析处理器
公开(公告)号：US20050238010A1
公开(公告)日：2005-10-27
申请号：US10832796
申请日：2004-04-26
申请人： Rina Panigrahy , Jackie Liu , Daniel Ng , Sanjay Jain , Nagaraj Bagepalli , Abhijit Patra
发明人： Rina Panigrahy , Jackie Liu , Daniel Ng , Sanjay Jain , Nagaraj Bagepalli , Abhijit Patra
IPC分类号： H04L12/56 , H04L29/06
CPC分类号： H04L63/0254 , H04L63/1408 , H04L69/22
摘要： The present invention provides a packet processing device and method. A parsing processor provides instruction-driven content inspection of network packets at 10-Gbps and above with a parsing engine that executes parsing instructions. A flow state unit maintains statefulness of packet flows to allow content inspection across several related network packets. A state-graph unit traces state-graph nodes to keyword indications and/or parsing instructions. The parsing instructions can be derived from a high-level application to emulate user-friendly parsing logic. The parsing processor sends parsed packets to a network processor unit for further processing.
摘要翻译：本发明提供一种分组处理装置和方法。解析处理器使用执行解析指令的解析引擎，以10Gbps及以上的网络分组提供指令驱动的内容检查。流状态单元保持分组流的状态，以允许跨多个相关网络分组的内容检查。状态图单元将状态图节点跟踪到关键字指示和/或解析指令。解析指令可以从高级应用程序导出，以模拟用户友好的解析逻辑。解析处理器将解析的分组发送到网络处理器单元用于进一步处理。

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