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    • 71. 发明申请
    • METHOD FOR PRODUCING DIISOBUTYLENE USING MIXED C4 FRACTION AS RAW MATERIAL
    • 使用混合C4级分作为原料生产二异丁烯的方法
    • US20140128652A1
    • 2014-05-08
    • US14129410
    • 2012-06-06
    • Fumio YamakawaKei TatesakiTakashi Nakagawa
    • Fumio YamakawaKei TatesakiTakashi Nakagawa
    • C07C2/06
    • C07C2/06C07C2/12C07C7/04C07C11/02
    • There is provided a process for producing high-purity diisobutylene with a high reaction selectivity in which a mixed C4 fraction is contacted with an oligomerization catalyst to subject isobutene to oligomerization at one stage. The present invention relates to a process for producing diisobutylene by contacting a mixed C4 fraction as a raw material with a solid acid catalyst, which includes the steps of (a) isobutene oligomerization; (b) subjecting the resulting reaction products to distillation to separate the unreacted C4 fraction and an oligomer fraction including a C8 fraction produced from each other; and (c) purification of diisobutylene from the C8 fraction by distillation, in which a conversion of isobutene contained in the mixed C4 fraction upon conducting the step (a) is controlled to a range of from 60 to 95%.
    • 提供了一种生产具有高反应选择性的高纯度二异丁烯的方法,其中混合的C4级分与低聚催化剂接触以使异丁烯在一个阶段进行低聚。 本发明涉及通过使作为原料的混合C4馏分与固体酸催化剂接触来制备二异丁烯的方法,其包括以下步骤:(a)异丁烯低聚; (b)使所得反应产物蒸馏以分离出未反应的C4馏分和包含彼此产生的C8馏分的低聚物馏分; 和(c)通过蒸馏从C8馏分纯化二异丁烯,其中在步骤(a)中将混合的C4馏分中所含的异丁烯的转化率控制在60至95%的范围内。
    • 76. 发明授权
    • Fuel cell separator and fuel cell including same
    • 燃料电池分离器和包括其的燃料电池
    • US08568941B2
    • 2013-10-29
    • US12767507
    • 2010-04-26
    • Shinsuke TakeguchiTakashi NakagawaYoichiro Tsuji
    • Shinsuke TakeguchiTakashi NakagawaYoichiro Tsuji
    • H01M8/04
    • H01M8/0265H01M8/0258H01M8/0263H01M8/0267H01M8/241H01M8/2457H01M8/2483H01M2008/1095
    • A separator for use in a fuel cell of the present disclosure includes: a plate; a first gas manifold hole (51) for supplying a reactant gas, formed to penetrate said plate in a thickness direction thereof; a second gas manifold hole (52) for discharging the reactant gas, formed to penetrate said plate in a thickness direction thereof; one or more groove-like first main gas channels (18) formed on a surface of said plate to have one end connected to said first gas manifold hole (51) and the other end connected to said second gas manifold hole; a groove-like first sub-gas channel (28) formed on the surface of said plate to have one end connected to at least one of said first gas manifold hole (51) and said second gas manifold hole (52); and a groove-like second sub-gas channel (38) formed on the surface of said plate to have one end branching from said first sub-gas channel (28) and the other end being closed.
    • 本公开的燃料电池用隔板包括:板; 第一气体歧管孔(51),用于供应形成为在其厚度方向上穿透所述板的反应气体; 第二气体歧管孔(52),用于排出反应气体,其形成为在其厚度方向上穿透所述板; 形成在所述板的表面上的一个或多个凹槽状的第一主气体通道(18),其一端连接到所述第一气体歧管孔(51),另一端连接到所述第二气体歧管孔; 形成在所述板的表面上的一个沟槽状的第一子气体通道(28),其一端连接到所述第一气体歧管孔(51)和所述第二气体歧管孔(52)中的至少一个; 以及形成在所述板的表面上的槽状第二子气体通道(38),以使得从所述第一子气体通道(28)分支的一端和另一端被封闭。
    • 79. 发明授权
    • Nonvolatile storage element and manufacturing method thereof
    • 非易失性存储元件及其制造方法
    • US08324608B2
    • 2012-12-04
    • US13451265
    • 2012-04-19
    • Takashi NakagawaEun-mi KimYuichi OtaniNaomu Kitano
    • Takashi NakagawaEun-mi KimYuichi OtaniNaomu Kitano
    • H01L47/00
    • H01L45/08H01L45/1233H01L45/1253H01L45/146H01L45/1625H01L45/1641
    • In a variable resistance nonvolatile storage element, an electrode suitable for a variable resistance operation and formed of a metallic nitride layer containing Ti and N is provided. In a nonvolatile storage device including: a first electrode; a second electrode; and a variable resistance layer which is sandwiched between the first electrode and the second electrode and in which a resistance value changes to two different resistance states, at least one of the first electrode and the second electrode is an electrode including a metallic nitride layer containing at least Ti and N, and a mole ratio (N/Ti ratio) between Ti and N in at least a part of the metallic nitride layer, the part being in contact with the variable resistance layer is 1.15 or more and a film density is 4.7 g/cc or more.
    • 在可变电阻非易失性存储元件中,提供了适用于可变电阻操作并由含有Ti和N的金属氮化物层形成的电极。 一种非易失性存储装置,包括:第一电极; 第二电极; 以及可变电阻层,其夹在所述第一电极和所述第二电极之间,并且电阻值变为两个不同的电阻状态,所述第一电极和所述第二电极中的至少一个是包括含有 在金属氮化物层的至少一部分中,最小的Ti和​​N以及Ti和N之间的摩尔比(N / Ti比),与可变电阻层接触的部分为1.15以上,膜密度为4.7 g / cc以上。