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71. 发明授权

US06928096B2 Nitride-based semiconductor laser device and method of fabricating the same 失效
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US06928096B2
公开(公告)日：2005-08-09
申请号：US10114298
申请日：2002-04-03
申请人： Yasuhiko Nomura , Tatsuya Kunisato
发明人： Yasuhiko Nomura , Tatsuya Kunisato
IPC分类号： H01S5/16 , H01S5/323 , H01S5/343 , H01S5/00
CPC分类号： H01S5/162 , H01S5/32341 , Y10S977/951
摘要： A nitride-based semiconductor laser device capable of preventing deterioration in the vicinity of a facet is obtained. This nitride-based semiconductor laser device comprises a first conductivity type first cladding layer consisting of a nitride-based semiconductor formed on a substrate, an active layer formed on the first cladding layer, a second conductivity type second cladding layer consisting of a nitride-based semiconductor formed on the active layer and a high-resistance region formed at least portions of the active layer and the second cladding layer in the vicinity of the facet. The high-resistance region has higher resistance than the remaining regions, whereby a current hardly flows to the high-resistance region. Thus, temperature increase is suppressed in the vicinity of the facet, whereby deterioration can be prevented in the vicinity of the facet.
摘要翻译：可以获得能够防止小面附近的劣化的氮化物系半导体激光装置。该氮化物系半导体激光装置包括由形成在基板上的氮化物系半导体构成的第一导电型第一包层，形成在第一包层上的有源层，由氮化物系形成的第二导电型第二包覆层形成在有源层上的半导体层和形成在该小面附近的有源层和第二包层的至少一部分的高电阻区域。高电阻区域比其余区域具有更高的电阻，因此电流几乎不流向高电阻区域。因此，在小面附近抑制温度上升，从而可以防止在小面附近的劣化。

72. 发明授权

US08519416B2 Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device 有权
标题翻译：制造氮化物系半导体发光元件和氮化物系半导体发光元件的方法
公开(公告)号：US08519416B2
公开(公告)日：2013-08-27
申请号：US12576813
申请日：2009-10-09
申请人： Takashi Kano , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01S5/0202 , H01S5/0207 , H01S5/0425 , H01S5/3063 , H01S2304/04 , H01S2304/12
摘要： A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.
摘要翻译：描述了能够抑制特性降低和产量的氮化物半导体发光器件及其制造方法。制造方法包括以下步骤：通过选择性地除去与氮化物基半导体衬底的发光部分相对应的第一区域以外的氮化物系半导体衬底的第二区域的规定区域，在氮化物系半导体衬底上形成沟槽部氮化物基半导体层直到规定的深度，并且在氮化物基半导体衬底的第一区域和沟槽部分上形成具有与氮化物基半导体衬底不同的组成的氮化物基半导体层。

73. 发明授权

US08334577B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08334577B2
公开(公告)日：2012-12-18
申请号：US12402196
申请日：2009-03-11
申请人： Takashi Kano , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01L33/12 , H01L33/32 , H01S5/0217 , H01S5/2009 , H01S5/2214 , H01S5/2231 , H01S2301/173 , H01S2304/04 , H01S2304/12
摘要： A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride semiconductor layer formed on a surface of the semiconductor substrate and formed between the semiconductor substrate and the active layer. The nitride semiconductor layer is formed of the same constituent elements of the semiconductor substrate. A composition ratio of the lightest element among the group III elements of the nitride semiconductor layer is higher than a composition ratio of the corresponding element of the semiconductor substrate.
摘要翻译：半导体器件包括由至少两种III族元素和氮形成的半导体衬底，形成在半导体衬底上的有源层和形成在半导体衬底的表面上并形成在半导体衬底和第二衬底之间的氮化物半导体层活动层氮化物半导体层由半导体衬底的相同构成元件形成。氮化物半导体层的III族元素中的最轻元素的组成比高于半导体衬底的相应元素的组成比。

74. 发明授权

US08098704B2 Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatus 失效
标题翻译：半导体激光装置，半导体激光装置的制造方法以及光拾取装置
公开(公告)号：US08098704B2
公开(公告)日：2012-01-17
申请号：US12348573
申请日：2009-01-05
申请人： Masayuki Hata , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono , Kenji Nagatomi , Yoichi Tsuchiya
发明人： Masayuki Hata , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono , Kenji Nagatomi , Yoichi Tsuchiya
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , H01L2224/48091 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/4087 , H01L2924/00014
摘要： A monolithic red/infrared semiconductor laser device is joined to a blue-violet semiconductor laser device. The distance between a blue-violet emission point in the blue-violet semiconductor laser device and an infrared emission point in an infrared semiconductor laser device is significantly shorter than the distance between a red emission point in a red semiconductor laser device and the infrared emission point. A blue-violet laser beam, a red laser beam, and an infrared laser beam respectively emitted from the blue-violet emission point, the red emission point, and the infrared emission point are introduced into a photodetector after being incident on an optical disk by an optical system comprising a polarizing beam splitter, a collimator lens, a beam expander, a λ/4 plate, an objective lens, a cylindrical lens, and an optical axis correction element.
摘要翻译：单片红/红外半导体激光器件连接到蓝紫色半导体激光器件。蓝紫色半导体激光装置中的蓝紫色发射点与红外线半导体激光装置的红外线发射点之间的距离明显短于红色半导体激光装置的红色发射点与红外线发射点。从蓝紫色发射点，红色发射点和红外线发射点分别发射的蓝紫色激光束，红色激光束和红外激光束被入射到光盘上之后被引入光电检测器包括偏振分束器，准直透镜，光束扩展器，λ/ 4板，物镜，柱面透镜和光轴校正元件的光学系统。

75. 发明申请

US20110281382A1 NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US20110281382A1
公开(公告)日：2011-11-17
申请号：US13193431
申请日：2011-07-28
申请人： Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Hata
发明人： Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Hata
IPC分类号： H01L21/78
CPC分类号： H01S5/22 , B82Y20/00 , H01L33/0095 , H01S5/0202 , H01S5/0207 , H01S5/0224 , H01S5/02272 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/3063 , H01S5/3072 , H01S5/34333 , H01S2304/04
摘要： A nitride-based semiconductor device includes a substrate constituted by nitride-based semiconductor, a nitride-based semiconductor layer formed on the substrate and constituted by nitride-based semiconductor, formed with a light waveguide extending in a first direction, and first step portions formed at least on regions other than the vicinity of facets of the light waveguide from a surface opposite to a side where the nitride-based semiconductor layer of the substrate is formed along the first direction in which the light waveguide extends.
摘要翻译：氮化物类半导体器件包括由氮化物类半导体构成的衬底，形成在衬底上并由氮化物类半导体构成的氮化物类半导体层，形成有沿第一方向延伸的光波导，形成有第一级部至少在与光波导延伸的第一方向上形成有与基板的氮化物系半导体层相反的一侧的表面附近的光波导的小面附近的区域。

76. 发明授权

US07916766B2 Semiconductor laser device and manufacturing method thereof 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07916766B2
公开(公告)日：2011-03-29
申请号：US12511218
申请日：2009-07-29
申请人： Masayuki Hata , Yasuhiko Nomura , Kyoji Inoshita
发明人： Masayuki Hata , Yasuhiko Nomura , Kyoji Inoshita
IPC分类号： H01S5/00 , H01S3/097
CPC分类号： B82Y20/00 , H01L2224/32145 , H01L2224/48463 , H01L2224/73265 , H01S5/0202 , H01S5/02212 , H01S5/0224 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/34313 , H01S5/34326 , H01S5/34333 , H01S5/4043 , H01S5/4087 , H01S2302/00
摘要： A first semiconductor laser element is formed on a surface of the first substrate and including a first active layer. A second semiconductor laser element is bonded to the first semiconductor laser element with a first insulating film interposed therebetween. A first electrode is connected to the first semiconductor laser element. A second electrode is arranged on the surface of the first semiconductor laser element with the first insulating film interposed therebetween and connected to the second semiconductor laser element. The first semiconductor laser element has an optical waveguide formed in a region where the second semiconductor laser element is not bonded while the first electrode is arranged on the region, and the second electrode is formed to extend from between the second semiconductor laser element and first insulating film toward the region.
摘要翻译：第一半导体激光元件形成在第一基板的表面上并且包括第一有源层。第二半导体激光元件与第一半导体激光元件接合，其间插入有第一绝缘膜。第一电极连接到第一半导体激光元件。第二电极设置在第一半导体激光元件的表面上，第一绝缘膜插入其中并连接到第二半导体激光元件。第一半导体激光元件具有在第一半导体激光元件与第一绝缘体之间形成第一电极而形成在第二半导体激光元件未被接合的区域的光波导，电影向该地区。

77. 发明申请

US20100290498A1 SEMICONDUCTOR LASER DEVICE AND DISPLAY 审中-公开
标题翻译：半导体激光器件和显示器
公开(公告)号：US20100290498A1
公开(公告)日：2010-11-18
申请号：US12812644
申请日：2009-09-11
申请人： Masayuki Hata , Yasumitsu Kunoh , Yasuhiko Nomura , Saburo Nakashima
发明人： Masayuki Hata , Yasumitsu Kunoh , Yasuhiko Nomura , Saburo Nakashima
IPC分类号： H01S5/026
CPC分类号： H01S5/4031 , B82Y20/00 , H01L2224/48091 , H01L2224/48111 , H01L2224/48463 , H01L2224/73265 , H01S5/0216 , H01S5/0224 , H01S5/02272 , H01S5/22 , H01S5/24 , H01S5/3202 , H01S5/34333 , H01S5/405 , H01S5/4087 , H04N9/3161 , H01L2924/00014
摘要： A semiconductor laser device capable of flexibly coping even with a case where a large output power difference is required between a plurality of laser elements having different lasing wavelengths when reproducing white light is obtained. This semiconductor laser device (100) includes a red semiconductor laser element (10) having one or a plurality of laser beam emitting portions, a green semiconductor laser element (30) having one or a plurality of laser beam emitting portions, and a blue semiconductor laser element (50) having one or a plurality of laser beam emitting portions. At least two semiconductor laser elements among the red semiconductor laser element, the green semiconductor laser element and the blue semiconductor laser element have such a relation that the number of the laser beam emitting portions of the semiconductor laser element emitting a relatively long wavelength is larger than the number of the laser beam emitting portions of the semiconductor laser element emitting a relatively short wavelength.
摘要翻译：获得即使在再现白光时在具有不同的激光波长的多个激光元件之间需要大的输出功率差的情况下也能够灵活应对的半导体激光器件。该半导体激光装置（100）具有具有一个或多个激光束发射部的红色半导体激光元件（10），具有一个或多个激光束发射部的绿色半导体激光元件（30），蓝色半导体具有一个或多个激光束发射部分的激光元件（50）。红色半导体激光元件，绿色半导体激光元件和蓝色半导体激光元件中的至少两个半导体激光元件具有发射较长波长的半导体激光元件的激光束发射部的数量大于发射相对短波长的半导体激光元件的激光束发射部分的数量。

78. 发明授权

US07807490B2 Manufacturing method of nitride semiconductor device and nitride semiconductor device 有权
标题翻译：氮化物半导体器件和氮化物半导体器件的制造方法
公开(公告)号：US07807490B2
公开(公告)日：2010-10-05
申请号：US12216928
申请日：2008-07-14
申请人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
发明人： Takashi Kano , Tsutomu Yamaguchi , Hiroaki Izu , Masayuki Hata , Yasuhiko Nomura
IPC分类号： H01L21/00
CPC分类号： H01L21/0243 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L33/0075 , H01L33/025
摘要： Provided is a manufacturing method of a nitride semiconductor device having a nitride semiconductor substrate (e.g. GaN substrate) in which dislocation concentrated regions align in stripe formation, the dislocation concentrated regions extending from a front surface to a back surface of the substrate, the manufacturing method being for stacking each of a plurality of nitride semiconductor layers on the front surface of the substrate in a constant film thickness. Grooves are formed on the nitride semiconductor substrate in the immediate areas of dislocation concentrated regions. Each of the nitride semiconductor layers is formed as a crystal growth layer on the main surface of the nitride semiconductor substrate to which the grooves have been formed.
摘要翻译：提供了一种氮化物半导体器件的制造方法，其具有氮化物半导体衬底（例如GaN衬底），其中位错集中区域在条带形成中对准，位错集中区域从衬底的前表面延伸到后表面，制造方法用于以恒定的膜厚堆叠在基板的前表面上的多个氮化物半导体层中的每一个。在位错集中区域的紧邻区域上的氮化物半导体衬底上形成沟槽。每个氮化物半导体层在形成有凹槽的氮化物半导体衬底的主表面上形成为晶体生长层。

79. 发明授权

US07769069B2 Integrated semiconductor laser diode module and manufacturing method of the same 失效
标题翻译：集成半导体激光二极管模块及其制造方法相同
公开(公告)号：US07769069B2
公开(公告)日：2010-08-03
申请号：US11067472
申请日：2005-02-28
申请人： Yasuhiko Nomura , Yasuyuki Bessho , Masayuki Hata , Tsutomu Yamaguchi
发明人： Yasuhiko Nomura , Yasuyuki Bessho , Masayuki Hata , Tsutomu Yamaguchi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/028 , H01S5/0287 , H01S5/1039 , H01S5/1082 , H01S5/2009 , H01S5/221 , H01S5/222 , H01S5/2231 , H01S5/34326 , H01S5/34333 , H01S5/3436 , H01S5/4043 , H01S5/4087
摘要： Improving the lifetime of an integrated semiconductor laser diode module into which a GaN semiconductor laser diode and a GaP semiconductor laser diode are integrated, and the lasing properties of the laser diodes. Prior to a joining step of an LD 1 wafer that is made of a nitride semiconductor structure formed on a GaN substrate and an LD 2 wafer that is made of an aluminum gallium indium phosphide semiconductor structure, a facet of a resonator of the nitride semiconductor structure is formed by etching. A facet of a resonator of the aluminum gallium indium phosphide semiconductor structure is formed, after the joining step, by cleaving. The wafers are joined so that the facets of the resonators of the nitride semiconductor structure and aluminum gallium indium phosphide semiconductor structure are out of alignment in a lengthwise direction of the resonators.
摘要翻译：整合半导体激光二极管和GaP半导体激光二极管的集成半导体激光二极管模块的寿命提高以及激光二极管的激光特性。在由GaN衬底上形成的氮化物半导体结构和由铝镓铟磷化物半导体结构制成的LD 2晶片制成的LD 1晶片的接合步骤之前，氮化物半导体结构的谐振器的面通过蚀刻形成。在接合步骤之后，通过切割形成铝镓铟磷化物半导体结构的谐振器的一个面。晶片被接合，使得氮化物半导体结构的谐振器的面和磷化铝镓磷化物半导体结构在谐振器的长度方向上不对准。

80. 发明申请

US20100111130A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20100111130A1
公开(公告)日：2010-05-06
申请号：US12608549
申请日：2009-10-29
申请人： Yoshiki Murayama , Shingo Kameyama , Yasuhiko Nomura
发明人： Yoshiki Murayama , Shingo Kameyama , Yasuhiko Nomura
IPC分类号： H01S5/00 , H01L21/00 , H01L21/04
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/028 , H01S5/0287 , H01S5/22 , H01S5/3063
摘要： A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlOXNY (0≦X
摘要翻译：半导体激光器件包括形成在包括发光层的区域的发光侧的半导体元件层的端部上的第一腔面，形成在第一空腔的表面上的由AlN制成的第一绝缘膜在第一绝缘膜的与第一腔面相反的一侧的表面上形成由AlOXNY（0＆lt; NlE; X <1.5,0

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