专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US07525730B2 Method and device for generating white in an interferometric modulator display 失效
标题翻译：用于在干涉式调制器显示器中产生白色的方法和装置
公开(公告)号：US07525730B2
公开(公告)日：2009-04-28
申请号：US11188197
申请日：2005-07-22
申请人： Philip D. Floyd
发明人： Philip D. Floyd
IPC分类号： G02B27/00 , G02B26/02 , G02F1/00
CPC分类号： G02B26/001
摘要： Various embodiments of the invention relate to methods and systems for generating the color white in displays created from interferometric modulators and more specifically, to the generation of the color white through the use of reflected light at two wavelengths. In one embodiment, a display device displays the color white. The color white is generated by reflecting light from two pluralities of interferometric modulator types. The first modulator type reflects colored light at a specific wavelength. The second modulator type reflects colored light selected to be at a wavelength complementary to the first. The combined light reflected from the two types appears white in the display.
摘要翻译：本发明的各种实施例涉及用于在由干涉式调制器产生的显示器中产生彩色白色的方法和系统，更具体地说，涉及通过使用两个波长的反射光来产生白色。在一个实施例中，显示装置显示白色。彩色白色是通过反射来自两个干涉式调制器类型的光产生的。第一调制器类型反射特定波长的彩色光。第二调制器类型反射被选择为与第一个波长互补的波长的彩色光。从两种类型反射的组合光在显示屏上显示为白色。

72. 发明授权

US07195939B2 Structure and method for electrical isolation of optoelectronic integrated circuits 有权
标题翻译：光电集成电路电气隔离的结构和方法
公开(公告)号：US07195939B2
公开(公告)日：2007-03-27
申请号：US10281421
申请日：2002-10-25
申请人： Christopher L. Chua , Philip D. Floyd , Thomas L. Paoli , Decai Sun
发明人： Christopher L. Chua , Philip D. Floyd , Thomas L. Paoli , Decai Sun
IPC分类号： H01L21/00
CPC分类号： H01S5/0261 , H01S5/18313 , H01S5/1833 , H01S5/18388
摘要： Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
摘要翻译：光电子集成电路中的半导体器件通过使用平面横向氧化来彼此电绝缘以氧化垂直分离半导体器件的掩埋半导体层。

73. 发明授权

US07184202B2 Method and system for packaging a MEMS device 有权
标题翻译：用于封装MEMS器件的方法和系统
公开(公告)号：US07184202B2
公开(公告)日：2007-02-27
申请号：US11045800
申请日：2005-01-28
申请人： Mark W. Miles , Jeffrey B. Sampsell , Lauren Palmateer , Brian W. Arbuckle , Philip D. Floyd
发明人： Mark W. Miles , Jeffrey B. Sampsell , Lauren Palmateer , Brian W. Arbuckle , Philip D. Floyd
IPC分类号： G02F1/00
CPC分类号： B81C1/0023 , G02B26/001 , Y10T29/49002
摘要： A MEMS-based display device is described, wherein an array of interferometric modulators are configured to reflect light through a transparent substrate. The transparent substrate is sealed to a backplate and the backplate can contain electronic circuitry for controlling the array of interferometric modulators. The backplate can provide physical support for device components, such as electronic components which can be used to control the state of the display. The backplate can also be utilized as a primary structural support for the device.
摘要翻译：描述了基于MEMS的显示装置，其中干涉式调制器的阵列被配置为将光反射通过透明基板。透明基板被密封到背板，并且背板可以包含用于控制干涉式调制器阵列的电子电路。背板可以为诸如可用于控制显示器状态的电子部件等设备组件提供物理支持。背板也可以用作设备的主要结构支撑。

74. 再颁专利

USRE39261E1 Method and apparatus for an integrated laser beam scanner 有权
标题翻译：集成激光束扫描仪的方法和装置
公开(公告)号：USRE39261E1
公开(公告)日：2006-09-05
申请号：US10014563
申请日：2001-12-14
申请人： Philip D. Floyd , Decai Sun , Joel A. Kubby
发明人： Philip D. Floyd , Decai Sun , Joel A. Kubby
IPC分类号： G02B26/08
CPC分类号： G02B26/10 , G02B26/0833 , G02B26/0841 , G02B26/085
摘要： A solid state laser beam scanning system having a single crystal silicon deflection and scanning mirror integrated with a laser diode. By combining the techniques of deep reactive ion etching of silicon with solder bump bonding techniques, completed and tested laser diodes are integrated with silicon substrates supporting micro-electro-mechanical systems layers.
摘要翻译：具有与激光二极管集成的单晶硅偏转和扫描反射镜的固态激光束扫描系统。通过将硅的深反应离子蚀刻技术与焊料凸块接合技术相结合，完成和测试的激光二极管与支持微电子机械系统层的硅衬底集成。

75. 再颁专利

USRE38437E1 Method and apparatus for an integrated laser beam scanner using a carrier substrate 有权
标题翻译：使用载体衬底的集成激光束扫描器的方法和装置
公开(公告)号：USRE38437E1
公开(公告)日：2004-02-24
申请号：US10022917
申请日：2001-12-20
申请人： Philip D. Floyd , Decai Sun , Joel A. Kubby
发明人： Philip D. Floyd , Decai Sun , Joel A. Kubby
IPC分类号： G02B2608
CPC分类号： G02B26/085 , G02B26/0833 , G02B26/0841 , G02B26/105 , G06K7/10653 , H01L2224/16225
摘要： An solid state scanning system having a single crystal silicon deflection mirror and scanning mirror is integrated with a light source. Separation of the micro-electro-mechanical systems and light emitters on separate substrates allows the use of flip-chip and solder bump bonding techniques for mounting of the light sources. The separate substrates are subsequently full wafer bonded together to create an integrated solid state scanning system.

76. 发明授权

US06545335B1 Structure and method for electrical isolation of optoelectronic integrated circuits 有权
公开(公告)号：US06545335B1
公开(公告)日：2003-04-08
申请号：US09473109
申请日：1999-12-27
申请人： Christopher L. Chua , Philip D. Floyd , Thomas L. Paoli , Decai Sun
发明人： Christopher L. Chua , Philip D. Floyd , Thomas L. Paoli , Decai Sun
IPC分类号： H01L2900
CPC分类号： H01S5/0261 , H01S5/18313 , H01S5/1833 , H01S5/18388
摘要： Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.

77. 发明授权

US06238944B1 Buried heterostructure vertical-cavity surface-emitting laser diodes using impurity induced layer disordering (IILD) via a buried impurity source 有权
标题翻译：埋置异质结构垂直腔表面发射激光二极管通过杂质诱导层失调（IILD）通过埋入杂质源
公开(公告)号：US06238944B1
公开(公告)日：2001-05-29
申请号：US09471746
申请日：1999-12-21
申请人： Philip D. Floyd
发明人： Philip D. Floyd
IPC分类号： H01L2100
CPC分类号： H01S5/18308 , B82Y20/00 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/18369 , H01S5/2068 , H01S5/2072 , H01S5/3086 , H01S5/3414
摘要： The barrier layers within a quantum well active region of a vertical cavity surface emitting laser can be silicon doped. Under thermal annealing, the silicon doped barrier layers will form disordered regions of the quantum well active region around the remaining non-disordered regions of the quantum well active region. The disordered regions of the quantum well active region will prevent diffusion of injected carriers from the non-disordered, light emitting quantum well active region.
摘要翻译：垂直腔表面发射激光器的量子阱有源区域内的势垒层可以是硅掺杂的。在热退火下，硅掺杂阻挡层将在量子阱有源区的剩余非无序区域周围形成量子阱有源区的无序区域。量子阱有源区域的无序区域将防止注入的载流子从无序的发光量子阱活性区域扩散。

78. 发明授权

US6014240A Method and apparatus for an integrated laser beam scanner using a carrier substrate 有权
标题翻译：使用载体衬底的集成激光束扫描器的方法和装置
公开(公告)号：US6014240A
公开(公告)日：2000-01-11
申请号：US203442
申请日：1998-12-01
申请人： Philip D. Floyd , Decai Sun , Joel A. Kubby
发明人： Philip D. Floyd , Decai Sun , Joel A. Kubby
IPC分类号： G02B26/08 , G02B26/10 , G06K7/10
CPC分类号： G06K7/10653 , G02B26/0833 , G02B26/0841 , G02B26/085 , G02B26/10
摘要： An solid state scanning system having a single crystal silicon deflection mirror and scanning mirror is integrated with a light source. Separation of the micro-electro-mechanical systems and light emitters on separate substrates allows the use of flip-chip and solder bump bonding techniques for mounting of the light sources. The separate substrates are subsequently full wafer bonded together to create an integrated solid state scanning system.
摘要翻译：具有单晶硅偏转镜和扫描镜的固态扫描系统与光源集成。在单独的基板上分离微电子机械系统和发光体允许使用倒装芯片和焊料凸块焊接技术来安装光源。随后将单独的基底全晶片结合在一起以产生一体化固态扫描系统。

79. 发明授权

US5920766A Red and blue stacked laser diode array by wafer fusion 失效
标题翻译：红色和蓝色堆叠激光二极管阵列通过晶片融合
公开(公告)号：US5920766A
公开(公告)日：1999-07-06
申请号：US3676
申请日：1998-01-07
申请人： Philip D. Floyd
发明人： Philip D. Floyd
IPC分类号： H01S5/02 , H01S5/323 , H01S5/40 , H01S3/02
CPC分类号： H01S5/0215 , H01S5/0213 , H01S5/0217 , H01S5/32325 , H01S5/32341 , H01S5/4043 , H01S5/4087
摘要： A red laser structure has an inverted or p-side down orientation. The red laser structure is inverted and wafer fused to a blue laser structure to form a red/blue monolithic integrated laser structure. The top semiconductor layer of the inverted red laser structure is a GaInP fusion bonding layer which will be wafer fused to the top semiconductor layer of the blue laser structure which is a GaN cladding/contact layer.
摘要翻译：红色激光结构具有倒置或p侧向下取向。红色激光结构被反转，晶片与蓝色激光器结构融合，形成一个红色/蓝色的单片集成激光器结构。反向红色激光结构的顶部半导体层是GaInP熔合键合层，其将与作为GaN包层/接触层的蓝色激光结构的顶部半导体层晶圆熔合。

80. 发明授权

US5915165A Method of manufacturing vertical cavity surface emitting semiconductor lasers using intermixing and oxidation 失效
标题翻译：使用混合和氧化制造垂直腔表面发射半导体激光器的方法
公开(公告)号：US5915165A
公开(公告)日：1999-06-22
申请号：US990500
申请日：1997-12-15
申请人： Decai Sun , Philip D. Floyd
发明人： Decai Sun , Philip D. Floyd
IPC分类号： H01S5/183 , H01S3/18
CPC分类号： H01S5/18311 , H01S5/18308 , H01S5/18338 , H01S5/18355 , H01S5/2068 , H01S5/3063 , Y10S438/96
摘要： The present invention relates to a vertical cavity surface emitting laser with an accurately defined and controlled aperture which directs the current path within the laser. Specifically, the oxide regions surrounding the aperture are formed by a pre-oxidation layer disordering process which controls the regions within which oxidation can occur. The present invention allows for the manufacture of highly compact lasers with reproducible optical and electrical characteristics.
摘要翻译：本发明涉及一种垂直腔表面发射激光器，其具有精确限定和受控的孔径，其引导激光器内的电流路径。具体地，围绕孔的氧化物区域通过预氧化层无序化方法形成，其控制可发生氧化的区域。本发明允许制造具有可再现的光学和电学特性的高度紧凑的激光器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式