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    • 72. 发明授权
    • Field emission display device
    • 场致发射显示装置
    • US08007336B2
    • 2011-08-30
    • US12351730
    • 2009-01-09
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • H01J17/49
    • H01J1/304H01J9/025H01J2201/30469
    • A method for manufacturing a field emission element includes the following steps. The insulating substrate is provided. At least one grid, a first electrode and a second electrode are formed on the insulating substrate. The first and second electrodes are within the grid. The insulating substrate having at least one grid, the first electrode and the second electrode is covered with a carbon nanotube structure. The carbon nanotube structure includes a plurality of carbon nanotubes successively extended from the second electrode to the first electrode. The carbon nanotubes between the first electrode and the second electrode are cut to form a plurality of substantially parallel electron emitters in the at least one grid. One end of each electron emitter is electrically connected to the second electrode and opposite end of each electron emitter faces towards the first electrode.
    • 场致发射元件的制造方法包括以下步骤。 设置绝缘基板。 在绝缘基板上形成至少一个格栅,第一电极和第二电极。 第一和第二电极在电网内。 具有至少一个格栅的绝缘基板,第一电极和第二电极被碳纳米管结构覆盖。 碳纳米管结构包括从第二电极相继延伸到第一电极的多个碳纳米管。 切割第一电极和第二电极之间的碳纳米管,以在至少一个栅格中形成多个基本平行的电子发射体。 每个电子发射器的一端电连接到第二电极,并且每个电子发射体的相对端朝向第一电极。
    • 76. 发明申请
    • Field emission display
    • 场发射显示
    • US20090236965A1
    • 2009-09-24
    • US12317149
    • 2008-12-19
    • Peng LiuShou-Shan FanLiang LiuKai-Li Jiang
    • Peng LiuShou-Shan FanLiang LiuKai-Li Jiang
    • H01J1/62
    • H01J29/02H01J31/127
    • A field emission device includes a transparent plate, an insulating substrate, one or more grids located on the insulating substrate. Each grid includes a first, second, third and fourth electrode down-leads and a pixel unit. The first, second, third and fourth electrode down-leads are located on the periphery of the grid. The first and the second electrode down-leads are parallel to each other. The third and the fourth electrode down-leads are parallel to each other. The pixel unit includes a phosphor layer, a first electrode, a second electrode and at least one electron emitter. The first electrode and the second electrode are separately located. The first electrode is electrically connected to the first electrode down-lead, and the second electrode is electrically connected to the third electrode down-lead. The phosphor layer is located on the corresponding first electrode.
    • 场发射器件包括透明板,绝缘衬底,位于绝缘衬底上的一个或多个栅极。 每个栅格包括第一,第二,第三和第四电极下引线和像素单元。 第一,第二,第三和第四电极下引线位于电网的外围。 第一和第二电极下引线彼此平行。 第三和第四电极下引线彼此平行。 像素单元包括荧光体层,第一电极,第二电极和至少一个电子发射体。 第一电极和第二电极分开设置。 第一电极与第一电极下引线电连接,第二电极与第三电极下引线电连接。 磷光体层位于相应的第一电极上。
    • 78. 发明授权
    • Reference leak
    • 参考泄漏
    • US07353687B2
    • 2008-04-08
    • US11228821
    • 2005-09-16
    • Jie TangLiang LiuPeng LiuZhao-Fu HuBing-Chu DuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • Jie TangLiang LiuPeng LiuZhao-Fu HuBing-Chu DuCai-Lin GuoPi-Jin ChenShou-Shan Fan
    • G01F25/00
    • G01M3/007
    • A reference leak includes a leak layer formed of one of a metallic material, a glass material, and a ceramic material. The metallic material is selected from the group consisting of copper, nickel, and molybdenum. The leak layer comprises a number of substantially parallel leak through holes defined therein. The leak through holes may be cylindrical holes or polyhedrical holes. A length of each of the leak through holes is preferably not less than 20 times a diameter thereof. A diameter of each of the leak through holes is generally in the range from 10 nm to 500 nm. A length of each of the leak through holes is generally in the range from 100 nm to 100 μm. A leak rate of the reference leak is in the range from 10−8 to 10−15 tor×l/s. The leak through holes have substantially same length and diameter.
    • 参考泄漏包括由金属材料,玻璃材料和陶瓷材料之一形成的泄漏层。 金属材料选自铜,镍和钼。 泄漏层包括限定在其中的多个基本上平行的泄漏通孔。 泄漏孔可以是圆柱形孔或多面孔。 每个泄漏通孔的长度优选不小于其直径的20倍。 每个泄漏通孔的直径通常在10nm至500nm的范围内。 每个泄漏通孔的长度通常在100nm至100μm的范围内。 参考泄漏的泄漏率在10 -8至10 -15 torxl / s的范围内。 泄漏孔具有基本相同的长度和直径。
    • 79. 发明授权
    • Method for making thermionic electron emission device
    • 制造热离子电子发射装置的方法
    • US08808554B2
    • 2014-08-19
    • US13301658
    • 2011-11-21
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • Peng LiuLiang LiuKai-Li JiangShou-Shan Fan
    • H01B13/00B44C1/22
    • H01J1/14H01J9/04H01J31/127H01J2201/196
    • A method for making a thermionic electron emission device. The method includes the following steps. First, an insulating substrate is provided. Second, a number of lattices are formed on the insulating substrate. Third, a first electrode and a second electrode are fabricated in each lattice on the insulating substrate. Fourth, a carbon nanotube film structure is provided and at least part of the carbon nanotube film is suspended structure above the insulating substrate. Sixth, excess carbon nanotube film structure is cut away to obtain a number of thermionic electron emitters. The thermionic electron emitters are spaced from each other and located between the first electrode and the second electrode in each lattice.
    • 一种制造热离子电子发射装置的方法。 该方法包括以下步骤。 首先,提供绝缘基板。 其次,在绝缘基板上形成多个格子。 第三,在绝缘基板上的每个格子中制造第一电极和第二电极。 第四,提供一种碳纳米管薄膜结构,并且至少部分碳纳米管薄膜在绝缘基板上方悬浮结构。 第六,切掉多余的碳纳米管薄膜结构以获得许多热离子电子发射体。 热电子发射体彼此间隔开,并位于第一电极和第二电极之间。