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71. 发明授权

US06403413B2 Manufacturing method of semiconductor integrated circuit device having a capacitor 有权
标题翻译：具有电容器的半导体集成电路器件的制造方法
公开(公告)号：US06403413B2
公开(公告)日：2002-06-11
申请号：US09904591
申请日：2001-07-16
申请人： Katsuya Hayano , Akira Imai , Norio Hasegawa
发明人： Katsuya Hayano , Akira Imai , Norio Hasegawa
IPC分类号： H01L218242
CPC分类号： H01L27/10855 , G03F1/30 , H01L21/76897 , H01L27/10814 , H01L27/11502 , H01L2924/0002 , Y10S438/942 , Y10S438/946 , H01L2924/00
摘要： When a through hole 17 is transferred on a pair of contact holes 10 putting a data line DL therebetween, even if a pair of through holes 17 putting the data line DL therebetween are deviated, the pair of through holes are connected to the contact hole 10b and not connected to the data line DL. By this manner, a mask pattern formed by a photomask is use so as to be deviated and disposed in a direction separately from the data line DL at a design stage. This results in improvement of an alignment tolerance of the pattern.
摘要翻译：当通孔17被传送到放置数据线DL的一对接触孔10时，即使在其间放置数据线DL的一对通孔17偏离，一对通孔连接到接触孔10b 并且不连接到数据线DL。通过这种方式，在设计阶段使用由光掩模形成的掩模图案，以在与数据线DL分开的方向上偏离和布置。这导致图案的对准公差的改善。

72. 发明授权

US6020109A Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices 失效
标题翻译：半导体集成电路器件的曝光方法，对准器及其制造方法
公开(公告)号：US6020109A
公开(公告)日：2000-02-01
申请号：US257063
申请日：1999-02-25
申请人： Yoshihiko Okamoto , Tsuneo Terasawa , Akira Imai , Norio Hasegawa , Shinji Okazaki
发明人： Yoshihiko Okamoto , Tsuneo Terasawa , Akira Imai , Norio Hasegawa , Shinji Okazaki
IPC分类号： G03F1/00 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/20 , G03F9/00
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
摘要翻译：为了防止在使用两层相移掩模的曝光处理期间图像形成面的位置偏移，半导体晶片14的高度位置根据第二分量掩模12b的掩模基板厚度沿光轴方向移动，在执行使用层叠掩模12的曝光处理之前，其包括形成有遮光区域和透光区域的图案的第一成分掩模12a和形成有相移图案的第二成分掩模12b，以产生透射光的相移。

73. 发明授权

US5932395A Exposure method, aligner, and method manufacturing semiconductor integrated circuit devices 失效
标题翻译：半导体集成电路器件的曝光方法，对准器和方法制造
公开(公告)号：US5932395A
公开(公告)日：1999-08-03
申请号：US92139
申请日：1998-06-05
申请人： Yoshihiko Okamoto , Tsuneo Terasawa , Akira Imai , Norio Hasegawa , Shinji Okazaki
发明人： Yoshihiko Okamoto , Tsuneo Terasawa , Akira Imai , Norio Hasegawa , Shinji Okazaki
IPC分类号： G03F1/00 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/20 , G03F9/00
CPC分类号： G03F9/70 , G03F1/26 , G03F1/30 , G03F1/60 , G03F7/70283 , G03F7/70466
摘要： To prevent positional shifts of the image forming plane during the exposure process using the two-layer phase shift mask, the height position of the semiconductor wafer 14 is moved in the optical axis direction according to the mask substrate thickness of the second component mask 12b, prior to performing the exposure process which uses the stacked-layer mask 12 that comprises a first component mask 12a formed with a pattern of light-shielding areas and light-transmitting areas and a second component mask 12b formed with a phase shift pattern to produce a phase shift in the transmitted light.
摘要翻译：为了防止在使用两层相移掩模的曝光处理期间图像形成面的位置偏移，半导体晶片14的高度位置根据第二分量掩模12b的掩模基板厚度沿光轴方向移动，在执行使用层叠掩模12的曝光处理之前，其包括形成有遮光区域和透光区域的图案的第一成分掩模12a和形成有相移图案的第二成分掩模12b，以产生透射光的相移。

74. 发明授权

US5700601A Photomask, manufacture of photomask, formation of pattern, manufacture of semiconductor device, and mask pattern design system 失效
标题翻译：光掩模，光掩模的制造，图案的形成，半导体器件的制造和掩模图案设计系统
公开(公告)号：US5700601A
公开(公告)日：1997-12-23
申请号：US495836
申请日：1995-06-28
申请人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
发明人： Norio Hasegawa , Tsuneo Terasawa , Hiroshi Fukuda , Katsuya Hayano , Akira Imai , Akemi Moniwa , Shinji Okazaki
IPC分类号： G03F1/00 , G03F1/26 , G03F1/32 , G03F1/36 , G03F7/20 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/36 , G03F7/70283 , G03F7/70433
摘要： A photomask used for printing a mask pattern by projection optics, in which a main pattern formed of a transparent area is provided in a semitransparent area formed of a semitransparent film and a phase shifter, and the phase angles of light beams passing through respective areas are different from each other substantially by 180.degree.. The photomask is intended to prevent a reduction in a production yield due to a resolution failure of the photomask, and to prevent generation of an unnecessary projected image. In this photomask, a transparent auxiliary pattern having the same phase angle of light as that of the transparent area is disposed around a main pattern formed of the transparent area, and a distance D between the center or a desired center line of the main pattern and that of the auxiliary pattern satisfies the relationship of D=b.lambda./NAm , where NAm is a mask-side numerical aperture of a projection lens, .lambda. is a wavelength of exposure light, and is a coefficient in the range of 1.35
摘要翻译：用于通过投影光学器件打印掩模图案的光掩模，其中由透明区域形成的半透明区域设置在由半透明膜和移相器形成的半透明区域中，并且通过各个区域的光束的相位角为彼此相差180度。光掩模旨在防止由于光掩模的分辨率故障导致的产量降低，并且防止产生不必要的投影图像。在该光掩模中，具有与透明区域相同的相位相位角的透明辅助图案设置在由透明区域形成的主图案周围，并且主图案的中心或期望中心线之间的距离D和辅助图案的图案满足D =bλ/ NAm的关系，其中NAm是投影透镜的掩模侧数值孔径，λ是曝光光的波长，并且b是1.35的范围内的系数

75. 发明授权

US5318868A Photomask and method for manufacturing semiconductor device using photomask 失效
标题翻译：光掩模和使用光掩模制造半导体器件的方法
公开(公告)号：US5318868A
公开(公告)日：1994-06-07
申请号：US883532
申请日：1992-05-15
申请人： Norio Hasegawa , Fumio Murai
发明人： Norio Hasegawa , Fumio Murai
IPC分类号： G03F1/30 , G03F1/32 , G03F1/34 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/26 , G03F1/32 , G03F7/70466 , G03F7/70475
摘要： A photomask which is suitable for a phase shift method and a method for manufacturing a semiconductor device using the photomask is disclosed. The photomask comprises a transparent area, a translucent area and an opaque are arranged in a particular manner relative to a shifter film. In particular, the different elements are arranged so that the lowering of intensity and the amplitude of a transmitted light in the transparent area caused by an unnecessary peripheral part of a shifter film are smaller than the lowering of the intensity and the amplitude of a transmitted light through a transparent area. This serves to prevent an undesirable influence of the unnecessary peripheral part of so that a shifter film can reading be prevented, and a connected pattern can be formed.
摘要翻译：公开了适用于相移方法的光掩模和使用光掩模的半导体器件的制造方法。光掩模包括透明区域，半透明区域和不透明区域，以相对于移位膜的特定方式布置。特别地，不同的元件被布置成使得由移位膜的不必要的周边部分引起的在透明区域中的透射光的强度和振幅的降低小于透射光的强度和振幅的降低通过透明区域。这用于防止不必要的周边部分的不期望的影响，从而防止移位膜读取，并且可以形成连接的图案。

76. 发明申请

US20140092384A1 DIFFRACTION GRATING MANUFACTURING METHOD, SPECTROPHOTOMETER, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：衍射光栅制造方法，分光光度计和半导体器件制造方法
公开(公告)号：US20140092384A1
公开(公告)日：2014-04-03
申请号：US14118375
申请日：2012-05-17
申请人： Yoshisada Ebata , Shigeru Matsui , Norio Hasegawa , Kazuyuki Kakuta , Toshihiko Onozuka
发明人： Yoshisada Ebata , Shigeru Matsui , Norio Hasegawa , Kazuyuki Kakuta , Toshihiko Onozuka
IPC分类号： G02B5/18 , H01L21/26
CPC分类号： G02B5/1857 , G01J3/0262 , G01J3/18 , G01J3/42 , G02B5/18 , G02B5/1814 , G02B5/1861 , G03F1/50 , G03F1/54 , G03F7/0005 , H01L21/26
摘要： The present invention has been made in view of the above, and an object thereof is to provide a manufacturing technique capable of manufacturing a diffraction grating which is suitable for use in a spectrophotometer and has an apex angle of a convex portion of about 90° and can satisfy high diffraction efficiency and a low stray light amount. A method of manufacturing a diffraction grating, the method including: setting an exposure condition such that a sectional shape of a convex portion of a resist on a substrate, which has been formed by exposure, is an asymmetric triangle with respect to an opening portion shape of a mask having an opening portion with a periodic structure and an angle formed by a long side and a short side of the triangle is about 90°; and performing exposure.
摘要翻译：发明内容本发明是鉴于上述问题而完成的，其目的在于提供一种制造技术，其能够制造适用于分光光度计的衍射光栅，并具有约90°的凸部的顶角和可以满足高衍射效率和低杂散光量。一种制造衍射光栅的方法，该方法包括：设置曝光条件，使得通过曝光形成的基板上的抗蚀剂的凸部的截面形状相对于开口部形状为不对称三角形具有周期性结构的开口部分和由三角形的长边和短边形成的角度的面具为约90°; 并进行曝光。

77. 发明授权

US07387867B2 Manufacturing method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US07387867B2
公开(公告)日：2008-06-17
申请号：US10967277
申请日：2004-10-19
申请人： Norio Hasegawa , Katsuya Hayano , Shoji Hotta
发明人： Norio Hasegawa , Katsuya Hayano , Shoji Hotta
IPC分类号： G03F7/00
CPC分类号： H01L21/76808 , G03F1/30 , G03F1/32 , G03F1/50 , H01L21/31144
摘要： In a massed region of each of a plurality of transfer areas of a mask a plurality of light transmission patterns are formed by opening a half-tone film. A phase shifter is disposed in each of the light transmission patterns so that a 180° phase inversion occurs between the lights that transmit through adjacent light transmission patterns. In a sparse region of the plurality of transfer areas a solitary light transmission pattern is formed by opening the half-tone film. Both shape and size are the same among the light transmission patterns, which are disposed symmetrically in both the massed and sparse regions about the center between the transfer areas. The phase shifters in the massed regions are disposed so that the phase of each phase shifter in one of the transfer areas comes to be opposed to that of its counterpart in the other transfer area. In the exposure process, those transfer areas are overlaid one upon another in the same chip region.
摘要翻译：在掩模的多个转印区域的每一个的质量区域中，通过打开半色调膜形成多个透光图案。在每个透光图案中设置移相器，使得在通过相邻光传输图案传输的光之间发生180°的相位反转。在多个转印区域的稀疏区域中，通过打开半色调膜形成单独的透光图案。在透光图案之间的形状和尺寸都相同，所述光透射图案在转印区域之间的中心周围的质量和稀疏区域中对称地设置。配置区域中的移相器被布置成使得其中一个传送区域中的每个移相器的相位与其它传送区域中的相应部件的相位相反。在曝光处理中，这些传送区域在相同的芯片区域中彼此重叠。

78. 发明申请

US20070128556A1 Method of manufacturing semiconductor integrated circuit devices 审中-公开
标题翻译：制造半导体集成电路器件的方法
公开(公告)号：US20070128556A1
公开(公告)日：2007-06-07
申请号：US11651977
申请日：2007-01-11
申请人： Norio Hasegawa , Akira Imai , Katsuya Hayano
发明人： Norio Hasegawa , Akira Imai , Katsuya Hayano
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F7/70358 , G03F1/30 , G03F7/70283 , G03F7/70466
摘要： To alleviate the absolute value control accuracy of phases in a mask having a groove shifter structure, transfer regions formed at different planar positions on the same plane of the same mask are subjected to a multiple exposure by scanning exposure. Although. identical mask patterns are formed over the transfer regions respective groove shifters provided to these mask patterns are arranged opposite from each other.
摘要翻译：为了减轻具有凹槽移位结构的掩模中的相位的绝对值控制精度，形成在同一掩模的同一平面上的不同平面位置处的转印区域通过扫描曝光进行多次曝光。虽然。在传送区域上形成相同的掩模图案，设置在这些掩模图案上的相应的凹槽移位器相互布置。

79. 发明授权

US06893801B2 Fabrication method of semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US06893801B2
公开(公告)日：2005-05-17
申请号：US10753354
申请日：2004-01-09
申请人： Osamu Inoue , Norio Hasegawa , Shuji Ikeda
发明人： Osamu Inoue , Norio Hasegawa , Shuji Ikeda
IPC分类号： G03F1/36 , G03F1/68 , G03F7/20 , G03F7/22 , H01L21/027 , H01L21/28 , H01L21/768 , H01L21/8242 , H01L27/10 , H01L27/108 , G03C5/00
CPC分类号： G03F1/32 , G03F1/36 , G03F7/70125 , Y10S430/146
摘要： On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.
摘要翻译：在通过经由光掩模MK照射经修改的照明的定向激光束在半导体晶片上照射光致抗蚀剂以将预定图案转印到半导体晶片的对准处理的情况下，光掩模MK分配以提供周期性的主孔通过去除掩模基板上的半色调膜的一部分而形成的孔，并且通过将半色调膜的一部分形成的孔用于提高模式的分辨率。

80. 发明申请

US20050063485A1 Transmitter 有权
标题翻译：发射机
公开(公告)号：US20050063485A1
公开(公告)日：2005-03-24
申请号：US10940956
申请日：2004-09-15
申请人： Norio Hasegawa , Tetsuhiko Miyatani , Yoshihiko Akaiwa
发明人： Norio Hasegawa , Tetsuhiko Miyatani , Yoshihiko Akaiwa
IPC分类号： H04B1/04 , H04J13/00 , H04K1/02 , H04L27/26 , H04L27/36
CPC分类号： H04B1/707 , H04B2201/70706 , H04L27/2614
摘要： A transmitter that effectively suppresses the peak level of transmit signals is equipped with peak reduction signal generating means that generates a peak reduction signal having a level based on a transmit signal level threshold for determining a peak of the transmit signal and on a transmit signal peak level and having a phase based on the phase of the transmit signal, peak reduction signal processing means that subjects the peak reduction signal to band restriction and orthogonal modulation, and transmit signal level suppressing means that subtracts the peak reduction signal subjected to band restriction and orthogonal modulation from the transmit signal.
摘要翻译：有效地抑制发射信号的峰值电平的发射机配备有峰值降低信号发生装置，其产生具有基于发射信号电平阈值的电平的峰值降低信号，用于确定发射信号的峰值和发射信号峰值电平并且具有基于发送信号的相位的相位，使峰值降低信号进行频带限制和正交调制的峰值降低信号处理装置，以及减去经受带限制和正交调制的峰值降低信号的发送信号电平抑制装置从发送信号。

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