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71. 发明授权

US08263478B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08263478B2
公开(公告)日：2012-09-11
申请号：US12805582
申请日：2010-08-06
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Koichi Tanaka , Makoto Kawai , Yuuji Tobisaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L27/1266 , H01L29/78603
摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 at a dosage of 1.5×1017 atoms/cm2 or higher to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 and the low melting glass substrate 20 are bonded together. The bonded substrate is heated at relatively low temperature, 120° C. or higher and 250° C. or lower (below a melting point of the support substrate). Further, an external shock is applied to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the heat-treated bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that a semiconductor substrate can be fabricated. There can be provided a semiconductor substrate in which a high-quality silicon thin film is transferred onto a substrate made of a low melting point material.
摘要翻译：将氢离子以1.5×10 17原子/ cm 2或更高的剂量注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。氢离子注入，形成氢离子注入边界12。单晶Si衬底10和低熔点玻璃衬底20结合在一起。键合衬底在相对较低的温度，120℃或更高和250℃或更低（低于支撑衬底的熔点）下加热。此外，施加外部冲击以沿着经热处理的键合衬底的单晶Si衬底10的氢离子注入边界12将Si晶体膜分层。然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造半导体衬底。可以提供一种半导体衬底，其中将高质量的硅薄膜转移到由低熔点材料制成的衬底上。

72. 发明授权

US08227290B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08227290B2
公开(公告)日：2012-07-24
申请号：US11976026
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Masahiro Furuya , Makoto Kawai , Koichi Tanaka , Yoshihiro Kubota , Yuuji Tobisaka
发明人： Atsuo Ito , Shoji Akiyama , Masahiro Furuya , Makoto Kawai , Koichi Tanaka , Yoshihiro Kubota , Yuuji Tobisaka
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/0682 , H01L31/186 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions, respectively; and forming collector electrodes for the individual electrodes, respectively.
摘要翻译：一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将离子注入单晶硅衬底; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以使单晶硅衬底机械分层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶硅的分层表面层; 在多个第一和第二导电类型区域上分别形成多个单独的电极; 并分别形成各个电极的集电极。

73. 发明授权

US08227289B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08227289B2
公开(公告)日：2012-07-24
申请号：US11976020
申请日：2007-10-19
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/186 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate; conducting a surface activating treatment for at least one of: the ion implanting surface of the single crystal silicon substrate, and a surface of the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the transparent insulator substrate to each other, such that the surface(s) subjected to the surface activating treatment is/are used as a bonding surface(s); applying an impact to the ion implanted layer; and forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, such that a plurality of first conductivity-type regions and second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer.
摘要翻译：一种单晶硅太阳能电池的制造方法，包括以下步骤：将离子注入单晶硅衬底; 对所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底的表面中的至少一个进行表面活化处理; 将单晶硅衬底和透明绝缘体衬底的离子注入表面彼此接合，使得经过表面活化处理的表面被用作粘合表面; 对离子注入层施加冲击; 并且在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电型区域和第二导电类型区域存在于单晶层的分层表面硅层。

74. 发明申请

US20120058622A1 METHOD FOR PRODUCING BONDED WAFER 有权
标题翻译：生产粘结波的方法
公开(公告)号：US20120058622A1
公开(公告)日：2012-03-08
申请号：US13318250
申请日：2010-04-30
申请人： Makoto Kawai , Yuji Tobisaka , Shoji Akiyama
发明人： Makoto Kawai , Yuji Tobisaka , Shoji Akiyama
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/67109
摘要： When a thermal expansion coefficient of a handle substrate is higher than that of a donor substrate, delamination is provided without causing a crack in the substrates. A method for producing a bonded wafer, with at least the steps of: implanting ions into a donor substrate (3) from a surface thereof to form an ion-implanted interface (5); bonding a handle substrate (7) with a thermal expansion coefficient higher than that of the donor substrate (3) onto the ion-implanted surface of the donor substrate to provide bonded substrates, subjecting the bonded substrates to a heat treatment to provide an assembly (1), and delaminating the donor substrate (3) of the assembly (1) at the ion-implanted interface wherein the assembly (1) has been cooled to a temperature not greater than room temperature by a cooling apparatus (20), so that a donor film is transferred onto the handle substrate (7).
摘要翻译：当处理基板的热膨胀系数高于供体基板的热膨胀系数时，可以提供分层而不引起基板的裂纹。一种用于制造接合晶片的方法，至少具有以下步骤：从其表面将离子注入施主衬底（3）中以形成离子注入界面（5）; 将具有高于施主衬底（3）的热膨胀系数的手柄衬底（7）接合到施主衬底的离子注入表面上以提供接合衬底，对接合的衬底进行热处理以提供组件（ 1），并且在离子注入界面处使组件（1）的施主衬底（3）分层，其中组件（1）已经被冷却装置（20）冷却到不高于室温的温度，使得施主膜转移到手柄基板（7）上。

75. 发明授权

US08119903B2 Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08119903B2
公开(公告)日：2012-02-21
申请号：US11984182
申请日：2007-11-14
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/04 , H01L31/0216 , B05D5/12
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/03921 , H01L31/056 , H01L31/0682 , H01L31/1892 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： There is disclosed a single crystal silicon solar cell includes the steps of: implanting hydrogen ions or rare gas ions to a single crystal silicon substrate; performing surface activation on at least one of an ion-implanted surface of the single crystal silicon substrate and a surface of a transparent insulator substrate; bonding the ion-implanted surface of the single crystal silicon substrate and the transparent insulator substrate with the surface-activated surface being set as a bonding surface; applying an impact onto the ion implanted layer to mechanically delaminate the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type on the delaminated plane side of the single crystal silicon layer; forming a plurality of first conductivity type regions and a plurality of second conductivity type regions on the delaminated plane of the single crystal silicon layer; and forming a light reflection film that covers the plurality of first conductivity type regions and the plurality of second conductivity type regions. There can be provided an optical confinement type single crystal silicon solar cell where a thin-film light conversion layer is made of high-crystallinity single crystal silicon.
摘要翻译：公开了一种单晶硅太阳能电池，包括以下步骤：将氢离子或稀有气体离子注入单晶硅衬底; 在单晶硅衬底的离子注入表面和透明绝缘体衬底的表面中的至少一个上进行表面活化; 将所述单晶硅衬底的离子注入表面和所述透明绝缘体衬底接合，所述表面激活表面被设置为接合表面; 对离子注入层施加冲击以机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层平面侧形成具有第二导电类型的多个扩散区; 在单晶硅层的分层面上形成多个第一导电型区域和多个第二导电型区域; 以及形成覆盖所述多个第一导电类型区域和所述多个第二导电类型区域的光反射膜。可以提供一种光限制型单晶硅太阳能电池，其中薄膜光转换层由高结晶度单晶硅制成。

76. 发明授权

US08106290B2 Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08106290B2
公开(公告)日：2012-01-31
申请号：US12073437
申请日：2008-03-05
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Kouichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L31/056 , H01L21/76254 , H01L31/03921 , H01L31/0682 , H01L31/1804 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a single crystal silicon solar cell includes implanting either hydrogen ions or rare-gas ions into a single crystal silicon substrate; bringing the single crystal silicon substrate in close contact with a transparent insulator substrate via a transparent adhesive, with the ion-implanted surface being a bonding surface; curing the transparent adhesive; mechanically delaminating the single crystal silicon substrate to form a single crystal silicon layer; forming a plurality of diffusion areas of a second conductivity type in the delaminated surface side of the single crystal silicon layer, and causing a plurality of areas of a first conductivity type and the plurality of areas of the second conductivity type to be present in the delaminated surface of the single crystal silicon layer; forming each of a plurality of individual electrodes on each one of the plurality of areas of the first conductivity type and on each one of the plurality of areas of the second conductivity type; forming a collector electrode for the plurality of individual electrodes on the plurality of areas of the first conductivity type, and a collector electrode for the plurality of individual electrodes on the plurality of areas of the second conductivity type; and forming a light-reflecting film.
摘要翻译：制造单晶硅太阳能电池的方法包括将氢离子或稀土离子注入到单晶硅衬底中; 使单晶硅衬底通过透明粘合剂与透明绝缘体衬底紧密接触，离子注入表面是接合表面; 固化透明胶; 机械地分层单晶硅衬底以形成单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电类型的扩散区域，并且使多个第一导电类型的区域和第二导电类型的多个区域存在于分层的单晶硅层表面; 在第一导电类型的多个区域中的每一个区域和第二导电类型的多个区域中的每一个区域上形成多个单独电极中的每一个; 在所述第一导电类型的多个区域上形成用于所述多个单独电极的集电极，以及在所述第二导电类型的多个区域上的所述多个单独电极的集电极; 并形成光反射膜。

77. 发明申请

US20110290320A1 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 审中-公开
公开(公告)号：US20110290320A1
公开(公告)日：2011-12-01
申请号：US13137215
申请日：2011-07-28
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L31/0224 , H01L31/0256 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/1896 , Y02B10/10 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.

78. 发明申请

US20110227068A1 METHOD FOR MANUFACTURING COMPOSITE SUBSTRATE COMPRISING WIDE BANDGAP SEMICONDUCTOR LAYER 有权
标题翻译：制造包含宽带束半导体层的复合基板的方法
公开(公告)号：US20110227068A1
公开(公告)日：2011-09-22
申请号：US13130627
申请日：2009-12-10
申请人： Shoji Akiyama
发明人： Shoji Akiyama
IPC分类号： H01L29/161 , H01L21/30 , H01L29/20 , H01L29/26
CPC分类号： H01L21/76254
摘要： Provided is a method for manufacturing a low-cost bonded wafer (8) which allows bulk crystals of a wide bandgap semiconductor (1) to be transferred onto a handle substrate (3) as thinly as possible without breaking the substrate. More specifically, provided is a method for manufacturing a bonded wafer (8) by forming a wide bandgap semiconductor film (4) on a surface of a handle substrate (3), the method comprising a step of implanting ions from a surface (5) of a wide bandgap semiconductor substrate (1) having a bandgap of 2.8 eV or more to form an ion-implanted layer (2), a step of applying a surface activation treatment to at least one of the surface of the handle substrate (3) and the ion-implanted surface (5) of the wide bandgap semiconductor substrate (1), a step of bonding the surface (5) of the wide bandgap semiconductor substrate (1) and the surface of the handle substrate (3) to obtain bonded substrates (6), a step of applying a heat treatment to the bonded substrates (6) at a temperature of 150° C. or more and 400° C. less, and a step of subjecting the ion-implanted layer (2) of the wide bandgap semiconductor substrate (1) to irradiation of visible light from the semiconductor substrate (1) side of the bonded substrates (6) to embrittle an interface of the ion-implanted layer (2) and transfer the wide bandgap semiconductor film (4) onto the handle substrate (3).
摘要翻译：提供一种制造低成本接合晶片（8）的方法，其允许宽带隙半导体（1）的体晶尽可能薄地转印到手柄基板（3）上而不破坏基板。更具体地，提供了一种通过在手柄基板（3）的表面上形成宽带隙半导体膜（4）来制造接合晶片（8）的方法，该方法包括从表面（5）注入离子的步骤，具有2.8eV或更大的带隙的宽带隙半导体衬底（1）以形成离子注入层（2）;对手柄衬底（3）的表面中的至少一个施加表面活化处理的步骤，和宽带隙半导体衬底（1）的离子注入表面（5），将宽带隙半导体衬底（1）的表面（5）和手柄衬底（3）的表面接合以获得键合的步骤基板（6），在150℃以上且400℃以下的温度下对接合基板（6）进行热处理的步骤较少，以及将离子注入层（2）宽带隙半导体衬底（1）照射来自半导体衬底（1）侧的可见光所述粘合基板（6）使所述离子注入层（2）的界面脆化，并将所述宽带隙半导体膜（4）转移到所述手柄基板（3）上。

79. 发明授权

US07935611B2 Method for manufacturing substrate for photoelectric conversion element 有权
标题翻译：光电转换元件用基板的制造方法
公开(公告)号：US07935611B2
公开(公告)日：2011-05-03
申请号：US12282176
申请日：2007-03-12
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/46 , H01L31/00
CPC分类号： H01L21/76254 , H01L31/0687 , H01L31/1804 , H01L31/1892 , Y02E10/544 , Y02E10/547 , Y02P70/521
摘要： A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.
摘要翻译：在硅衬底的表面上提供具有与体的导电类型相反的导电类型的硅层，并且通过硅层将氢离子注入到硅衬底的表面区域中以预定深度注入到氢离子注入层。然后，其导电类型与硅层的导电类型相反的n型锗基晶体层和导电类型与锗基晶体层的导电类型相反的p型锗基晶体层连续蒸发，相生长以提供锗基晶体。锗基晶体层的表面和支撑基板的表面接合在一起。在这种状态下，外部施加冲击以沿着氢离子注入层从硅衬底分离硅晶体，从而将由锗基晶体和硅晶体组成的叠层结构转移到支撑衬底上。

80. 发明申请

US20100264424A1 GaN LAYER CONTAINING MULTILAYER SUBSTRATE, PROCESS FOR PRODUCING SAME, AND DEVICE 审中-公开
标题翻译：包含多层基板的GaN层，其制造方法和装置
公开(公告)号：US20100264424A1
公开(公告)日：2010-10-21
申请号：US12747042
申请日：2008-12-11
申请人： Shoji Akiyama
发明人： Shoji Akiyama
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L33/007 , C30B23/025 , C30B25/183 , C30B29/08 , C30B29/406 , C30B33/02 , H01L21/02381 , H01L21/02433 , H01L21/0245 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： A GaN layer-containing multilayer substrate employing as a substrate a single crystal that can be made to have a large diameter, a process for producing same, and a device employing the multilayer substrate. The process for producing a multilayer substrate of the present invention includes a germanium growing step of heteroepitaxially growing a germanium layer above a (111) silicon substrate by chemical vapor deposition, a heat treatment step of carrying out a heat treatment of the obtained germanium layer above the silicon substrate in a temperature range of 700° C. to 900° C., and subsequently a GaN growing step of heteroepitaxially growing a GaN layer above the germanium layer.
摘要翻译：使用可以制造成具有大直径的单晶的衬底作为衬底的GaN层多层衬底，其制造方法和使用该多层衬底的器件。本发明的多层基板的制造方法包括通过化学气相沉积在（111）硅衬底上异质外延生长锗层的锗生长步骤，对所获得的锗层进行热处理的热处理步骤在700℃至900℃的温度范围内的硅衬底，随后在锗层之上异质外延生长GaN层的GaN生长步骤。

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