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71. 发明授权

US6057991A Thin film magnetic head with an improved surface to reduce the occurrence of head crash 失效
标题翻译：薄膜磁头具有改善的表面，以减少头部碰撞的发生
公开(公告)号：US6057991A
公开(公告)日：2000-05-02
申请号：US978586
申请日：1997-11-26
申请人： Nobuyuki Ishiwata , Tsutomu Ishi , Kiyokazu Nagahara , Kazumasa Kumagai
发明人： Nobuyuki Ishiwata , Tsutomu Ishi , Kiyokazu Nagahara , Kazumasa Kumagai
IPC分类号： G11B5/187 , G11B5/31 , G11B5/39 , G11B5/48
CPC分类号： G11B5/3967 , G11B5/1878 , G11B5/3106 , G11B5/3116 , G11B5/3163 , G11B5/4886 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： Disclosed is a merged head device which has: a slider main body with an air bearing surface to a magnetic medium; two magnetic shield films which are parallel disposed on a common plane with a predetermined interval and orthogonal to air flow on the downstream side of the air bearing surface of the slider main body; a magnetoresistive effect head which is disposed through a magnetic separating layer of an insulator between the two magnetic shield films; an inductive head which is composed of one magnetic pole film corresponding to one of the two magnetic shield films which is located downstream and the other magnetic pole film which is disposed through a magnetic gap on the other side of the one magnetic pole film where the magnetoresistive effect head does not exist, and recording is conducted by magnetic field which generates at the magnetic gap; and concave portions which are formed on both sides of the other magnetic pole film along the direction of the air flow on the air bearing surface of the slider main body so as to define a width of the other magnetic pole film; wherein the concave portions are filled with a non-magnetic material.
摘要翻译：公开了一种合并头装置，其具有：滑动器主体，其具有到磁介质的空气轴承表面; 两个磁屏蔽膜，其平行地设置在公共平面上，具有预定间隔并且与滑块主体的空气支承表面的下游侧上的空气流正交; 磁阻效应头，通过两个磁屏蔽膜之间的绝缘体的磁分离层布置; 感应头由一个对应于位于下游的两个磁屏蔽膜之一的磁极膜构成，另一个磁极膜通过一个磁极膜的另一侧的磁隙设置，其中磁阻效果头不存在，并且通过在磁隙处产生的磁场进行记录; 以及凹部，其形成在所述另一个磁极膜的两侧，沿着所述滑块主体的空气支承面上的空气流动方向，以限定所述另一个磁极膜的宽度; 其中所述凹部填充有非磁性材料。

72. 发明授权

US5938941A Magnetoresistance effect composite head and method of forming the same 失效
标题翻译：磁阻效应复合头及其形成方法
公开(公告)号：US5938941A
公开(公告)日：1999-08-17
申请号：US116570
申请日：1998-07-16
申请人： Nobuyuki Ishiwata , Tsutomu Ishi , Kiyokazu Nagahara , Kazumasa Kumagai
发明人： Nobuyuki Ishiwata , Tsutomu Ishi , Kiyokazu Nagahara , Kazumasa Kumagai
IPC分类号： G11B5/31 , G11B5/39 , G11B5/00
CPC分类号： G11B5/3116 , G11B5/3163 , G11B5/3967
摘要： An inductive head structure provided in a magnetoresistance effect composite head includes an inductive head and a magnetoresistance effect head, the inductive head structure including a magnetic gap layer sandwiched by first and second magnetic layers acting as magnetic poles, the first magnetic layer being positioned close to the magnetoresistance effect head, the magnetic gap layer being made of a non-magnetic and electrically insulative material, wherein the non-magnetic and electrically insulative material has a higher etching rate to reactive ion etching than at least a magnetic material of the second magnetic layer.
摘要翻译：设置在磁阻效应复合头中的感应头结构包括感应头和磁阻效应头，感应头结构包括由用作磁极的第一和第二磁性层夹持的磁隙层，第一磁性层位于磁阻效应头，磁隙层由非磁性和电绝缘材料制成，其中非磁性和电绝缘材料具有比至少第二磁性层的磁性材料更高的反应离子蚀刻蚀刻速率。

73. 发明授权

US09799822B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09799822B2
公开(公告)日：2017-10-24
申请号：US14118093
申请日：2012-04-19
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
IPC分类号： H01L29/82 , H01L43/02 , H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08
摘要： A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

74. 发明授权

US08547733B2 Magnetic random access memory 有权
公开(公告)号：US08547733B2
公开(公告)日：2013-10-01
申请号：US13590634
申请日：2012-08-21
申请人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
发明人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

75. 发明申请

US20100188890A1 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US20100188890A1
公开(公告)日：2010-07-29
申请号：US12665773
申请日：2008-06-16
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： G11C11/00 , H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01L27/228
摘要： A magnetoresistance effect element includes: a magnetization free layer; a spacer layer provided adjacent to the magnetization free layer; a first magnetization fixed layer provided adjacent to the spacer layer on a side opposite to the magnetization free layer; and at least two second magnetization fixed layers provided adjacent to the magnetization free layer. The magnetization free layer, the first magnetization fixed layer, and the second magnetization free layers respectively have magnetization components in a direction substantially perpendicular to film surfaces thereof. The magnetization free layer includes: two magnetization fixed portions; and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetizations of the two magnetization fixed portions constituting the magnetization free layer are fixed substantially antiparallel to each other in directions substantially perpendicular to the film surface. The domain wall motion portion is provided with magnetic anisotropy in a direction perpendicular to the film surface.
摘要翻译：磁阻效应元件包括：无磁化层; 邻近无磁化层设置的间隔层; 在与所述磁化自由层相反的一侧与所述间隔层相邻设置的第一磁化固定层; 以及与无磁化层相邻设置的至少两个第二磁化固定层。磁化自由层，第一磁化固定层和第二磁化自由层分别在基本垂直于其膜表面的方向上具有磁化分量。无磁化层包括：两个磁化固定部分; 以及布置在两个磁化固定部分之间的畴壁运动部分。构成无磁化层的两个磁化固定部分的磁化在基本上垂直于膜表面的方向上彼此基本上反平行地固定。畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。

76. 发明授权

US08416611B2 Magnetoresistance effect element and magnetic random access memory 有权
标题翻译：磁阻效应元件和磁性随机存取存储器
公开(公告)号：US08416611B2
公开(公告)日：2013-04-09
申请号：US12665773
申请日：2008-06-16
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： G11C11/00 , G11C11/14 , H01L29/82
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01F10/3272 , H01F10/3286 , H01L27/228
摘要： A magnetoresistance effect element includes: a magnetization free layer; a spacer layer provided adjacent to the magnetization free layer; a first magnetization fixed layer provided adjacent to the spacer layer on a side opposite to the magnetization free layer; and at least two second magnetization fixed layers provided adjacent to the magnetization free layer. The magnetization free layer, the first magnetization fixed layer, and the second magnetization free layers respectively have magnetization components in a direction substantially perpendicular to film surfaces thereof. The magnetization free layer includes: two magnetization fixed portions; and a domain wall motion portion arranged between the two magnetization fixed portions. Magnetizations of the two magnetization fixed portions constituting the magnetization free layer are fixed substantially antiparallel to each other in directions substantially perpendicular to the film surface. The domain wall motion portion is provided with magnetic anisotropy in a direction perpendicular to the film surface.
摘要翻译：磁阻效应元件包括：无磁化层; 邻近无磁化层设置的间隔层; 在与所述磁化自由层相反的一侧与所述间隔层相邻设置的第一磁化固定层; 以及与无磁化层相邻设置的至少两个第二磁化固定层。磁化自由层，第一磁化固定层和第二磁化自由层分别在基本垂直于其膜表面的方向上具有磁化分量。无磁化层包括：两个磁化固定部分; 以及布置在两个磁化固定部分之间的畴壁运动部分。构成无磁化层的两个磁化固定部分的磁化在基本上垂直于膜表面的方向上彼此基本上反平行地固定。畴壁运动部分在垂直于膜表面的方向上具有磁各向异性。

77. 发明授权

US08526222B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08526222B2
公开(公告)日：2013-09-03
申请号：US13606737
申请日：2012-09-07
申请人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
发明人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.
摘要翻译：根据本发明的磁性随机存取存储器具有：包括具有可逆磁化强度的无磁化区的磁记录层，其中写入电流在面内方向上流过磁记录层; 具有固定磁化强度的磁化固定层; 设置在磁化自由区域和磁化固定层之间的非磁性层; 以及设置成与磁记录层相对并且具有接收和辐射在磁记录层中产生的热的功能的散热结构。这样结构的磁性随机存取存储器通过使用散热器结构辐射在磁记录层中产生的热量，从而抑制由在面内方向上流动的写入电流引起的温度升高。

78. 发明申请

US20100149862A1 MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US20100149862A1
公开(公告)日：2010-06-17
申请号：US12297153
申请日：2007-04-09
申请人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
发明人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory comprises a magnetic recording layer equipped with a magnetization reversal region having a reversible magnetization and through which a write current is made to flow in the in-plane direction, a magnetization fixed layer having a fixed magnetization, a nonmagnetic layer provided between the magnetization reversal region and the magnetization fixed layer, and a heat absorbing structure provided opposing to the magnetic recording layer and having a function of receiving heat generated in the magnetic recording layer and of radiating the heat. Such magnetic random access memory can radiate heat generated in the magnetic recording layer by using the heat absorbing structure and prevent temperature rising caused by the write current flowing in the in-plane direction.
摘要翻译：磁性随机存取存储器包括配备有具有可逆磁化的磁化反转区域并通过其使写入电流在面内方向上流动的磁记录层，具有固定磁化强度的磁化固定层，提供非磁性层在磁化反转区域和磁化固定层之间，以及与磁记录层相对设置并具有接收在磁记录层中产生的热量和散热的功能的吸热结构。这种磁性随机存取存储器可以通过使用吸热结构辐射在磁记录层中产生的热量，并且防止由写入电流在面内方向上流动引起的温度上升。

79. 发明授权

US08351249B2 Magnetic random access memory 有权
公开(公告)号：US08351249B2
公开(公告)日：2013-01-08
申请号：US12297153
申请日：2007-04-09
申请人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
发明人： Nobuyuki Ishiwata , Hideaki Numata , Norikazu Ohshima
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L23/367 , H01L27/222 , H01L43/08 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2924/00
摘要： A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.

80. 发明授权

US09083336B2 Non-volatile logic operation device 有权
标题翻译：非易失性逻辑运算器件
公开(公告)号：US09083336B2
公开(公告)日：2015-07-14
申请号：US13996522
申请日：2012-01-05
申请人： Shunsuke Fukami , Nobuyuki Ishiwata
发明人： Shunsuke Fukami , Nobuyuki Ishiwata
IPC分类号： H01L25/00 , G11C11/00 , H03K19/16 , H01L43/08 , H03K19/177
CPC分类号： H03K19/16 , H01L43/08 , H03K19/17724 , H03K19/17728
摘要： A non-volatile logic operation device includes an operation unit that is connected to a first input terminal, a second input terminal, and an output terminal, includes an operation layer, a first non-magnetic layer, and a reference layer, and outputs from the output terminal a result of a logic operation on signals applied at the first input terminal and the second input terminal, and a control unit that is connected to a third input terminal, and includes a control layer. The control unit is arranged in the vicinity of the operation unit.
摘要翻译：非易失性逻辑运算装置包括连接到第一输入端，第二输入端和输出端的操作单元，包括操作层，第一非磁性层和参考层，并从所述输出端子对在所述第一输入端子和所述第二输入端子处施加的信号进行逻辑运算的结果，以及连接到第三输入端子的控制单元，并且包括控制层。控制单元布置在操作单元的附近。

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