专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明申请

US20070165337A1 TUNNEL-TYPE MAGNETIC DETECTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：隧道式磁性检测元件及其制造方法
公开(公告)号：US20070165337A1
公开(公告)日：2007-07-19
申请号：US11622918
申请日：2007-01-12
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Kazumasa Nishimura , Ryo Nakabayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Masahiko Ishizone , Takuya Seino , Kazumasa Nishimura , Ryo Nakabayashi
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01L43/08 , H01L43/10
摘要： A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.
摘要翻译：提供隧道式磁检测元件。隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。

72. 发明授权

US07158354B2 Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected β values 有权
标题翻译：双磁性检测元件，其中自由磁性层和固定磁性层具有适当选择的β值
公开(公告)号：US07158354B2
公开(公告)日：2007-01-02
申请号：US10642899
申请日：2003-08-18
申请人： Masamichi Saito , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093
摘要： A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose β values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lower than those for down-spin conduction electrons when the magnetization of a free magnetic layer is changed to exhibit a lowest resistance. The magnetic detecting element exhibits an increased change in resistance per area.
摘要翻译：第一自由磁性层，第二自由磁性层，下部被钉扎的磁性层和上部被钉扎的磁性层由适当设定的β值的磁性材料形成，使得所有磁性层的上部 - 自旋传导电子的电阻当自由磁性层的磁化改变为具有最低电阻时，其变得低于用于向下自旋传导电子的电子。磁性检测元件表现出每区域电阻的增加的变化。

73. 发明申请

US20060227467A1 Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same 有权
标题翻译：具有隔离层Cu和磁性层之间的防扩散层的磁性检测元件及其制造方法
公开(公告)号：US20060227467A1
公开(公告)日：2006-10-12
申请号：US11396807
申请日：2006-04-03
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/127 , G11B5/33
CPC分类号： H01F41/302 , B82Y25/00 , B82Y40/00 , G11B5/3903 , H01F10/1936 , H01F10/3263 , H01F10/3277 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： There is provided a magnetic detecting element which can realize high reproduction power and reduce asymmetry of reproduction waveforms by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX alloy layer, and a CoMnZ alloy layer. The CoMnX alloy layer is formed of a metal compound whose compositional formula is represented by CoaMnbXc (X is one or more elements selected from a group of Ge, Sn, Ga, and Sb, a, b, and c are atomic percent, and a+b+c=100 atomic percent). The CoMnZ alloy layer is formed of a metal compound whose compositional formula is represented by CodMneZf (Z is Al or Si, d, e, and f are atomic percent, and d+e+f=100 atomic percent).
摘要翻译：提供了一种通过设计自由磁性层或钉扎磁性层的构造来实现高再现能力并减少再现波形的不对称性的磁性检测元件，以及制造磁性检测元件的方法。自由磁性层形成为具有CoMnZ合金层，CoMnX合金层和CoMnZ合金层的三层结构。 CoMnX合金层由金属化合物形成，其组成式由下式表示：（X是一个或多个元素选自Ge，Sn，Ga和Sb中的一组，a，b和c是原子百分数，a + b + c = 100原子％）。 CoMnZ合金层由金属化合物形成，其组成式由下式表示：Z为Al或Si， d，e和f是原子百分比，d + e + f = 100原子％）。

74. 发明申请

US20060198058A1 Magnetic sensor using NiFe alloy for pinned layer 有权
标题翻译：磁性传感器采用NiFe合金钉扎层
公开(公告)号：US20060198058A1
公开(公告)日：2006-09-07
申请号：US11366002
申请日：2006-02-28
申请人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
发明人： Yosuke Ide , Masamichi Saito , Masahiko Ishizone , Naoya Hasegawa
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3929
摘要： A magnetic layer 14c of a pinned magnetic layer 14 has a three-layered structure formed of a CoFe layer 14c1, a NiaFeb alloy layer 14c2 (where a and b each indicate atomic percent, and 0
摘要翻译：被钉扎的磁性层14的磁性层14c具有由CoFe层14c1，NiFe2Nb合金层14c 2，（其中a和b各自表示原子百分比，并且满足0

75. 发明授权

US07077936B2 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using exchange coupling film 有权
公开(公告)号：US07077936B2
公开(公告)日：2006-07-18
申请号：US10271077
申请日：2002-10-15
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： C23C14/32 , C23C16/00
CPC分类号： C23C14/5806 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/025 , C23C14/165 , C23C14/3492 , C23C28/021 , C23C28/023 , C23C28/028 , G01R33/093 , G11B5/3116 , G11B5/3903 , G11B2005/3996 , H01F10/123 , H01F10/3218 , H01F10/3268 , H01F41/302 , H01F41/304 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046
摘要： A laminate structure includes an antiferromagnetic layer, a pinned magnetic layer, and a seed layer contacting the antiferromagnetic layer on a side opposite to pinned magnetic layer. The seed layer is constituted mainly by face-centered cubic crystals with (111) planes preferentially oriented. The seed layer is preferably non-magnetic. Layers including the antiferromagnetic layer, a free magnetic layer, and layers therebetween, have (111) planes preferentially oriented.

76. 发明授权

US07054116B2 Spin valve element and thin film magnetic head 有权
标题翻译：自旋阀元件和薄膜磁头
公开(公告)号：US07054116B2
公开(公告)日：2006-05-30
申请号：US10631576
申请日：2003-07-31
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044 , Y10T428/1121 , Y10T428/115
摘要： A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film. It is thus possible to increase the sensitivity to an external magnetic field, and suppress the occurrence of a shunt loss to increase the rate of change in magnetoresistance.
摘要翻译：自旋阀元件包括反铁磁层，与反铁磁层接触形成的钉扎磁性层，使得其磁化方向通过与反铁磁层的交换耦合磁场固定，与被钉扎的磁性层接触的非磁性导电层以及与非磁性导电层接触的自由磁性层。自由磁性层包括非磁性中间层，第一和第二自由磁性层，其中设置有非磁性中间层，第二自由磁性层形成为与非磁性导电层接触，第一和第二自由磁性层是反铁磁耦合的彼此使两层成为亚铁磁状态，第一和第二自由磁性层中的任一个包括铁磁绝缘膜。因此，可以增加对外部磁场的灵敏度，并且抑制分流损耗的发生以增加磁阻的变化率。

77. 发明授权

US06992867B2 Spin valve element and thin film magnetic head having antiferromagnetic coupled layers 有权
标题翻译：自旋阀元件和具有反铁磁耦合层的薄膜磁头
公开(公告)号：US06992867B2
公开(公告)日：2006-01-31
申请号：US10631565
申请日：2003-07-31
申请人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
发明人： Masamichi Saito , Kenichi Tanaka , Yosuke Ide , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3967 , G11B2005/3996 , H01F10/3218 , H01F10/3268 , H01F10/3295 , H01F41/325 , Y10T29/49044 , Y10T428/1121 , Y10T428/115
摘要： A spin valve element includes an antiferromagnetic layer, a pinned magnetic layer formed in contact with the antiferromagnetic layer so that the magnetization direction thereof is pinned by an exchange coupling magnetic field with the antiferromagnetic layer, a nonmagnetic conductive layer in contact with the pinned magnetic layer, and a free magnetic layer in contact with the nonmagnetic conductive layer. The free magnetic layer includes a nonmagnetic intermediate layer, and first and second free magnetic layers with the nonmagnetic intermediate layer provided therebetween, the second free magnetic layer is formed in contact with the nonmagnetic conductive layer, the first and second free magnetic layers are antiferromagnetically coupled with each other to bring both layers into a ferrimagnetic state, and either of the first and second free magnetic layers comprises a ferromagnetic insulating film. It is thus possible to increase the sensitivity to an external magnetic field, and suppress the occurrence of a shunt loss to increase the rate of change in magnetoresistance.
摘要翻译：自旋阀元件包括反铁磁层，与反铁磁层接触形成的钉扎磁性层，使得其磁化方向通过与反铁磁层的交换耦合磁场固定，与被钉扎的磁性层接触的非磁性导电层以及与非磁性导电层接触的自由磁性层。自由磁性层包括非磁性中间层，第一和第二自由磁性层，其中设置有非磁性中间层，第二自由磁性层形成为与非磁性导电层接触，第一和第二自由磁性层是反铁磁耦合的彼此使两层成为亚铁磁状态，第一和第二自由磁性层中的任一个包括铁磁绝缘膜。因此，可以增加对外部磁场的灵敏度，并且抑制分流损耗的发生以增加磁阻的变化率。

78. 发明授权

US06893734B2 Magnetic sensing element with improved sensitivity and method for making the same 失效
标题翻译：具有改进灵敏度的磁感应元件及其制造方法
公开(公告)号：US06893734B2
公开(公告)日：2005-05-17
申请号：US10017301
申请日：2001-12-14
申请人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
发明人： Naoya Hasegawa , Eiji Umetsu , Masamichi Saito , Kenichi Tanaka , Yosuke Ide
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , Y10T428/1171 , Y10T428/12465 , Y10T428/12646 , Y10T428/12931 , Y10T428/12986 , Y10T428/24479 , Y10T428/265
摘要： A magnetic sensing element includes a laminate, the laminate including a first antiferromagnetic layer; a pinned magnetic layer, the magnetization direction thereof being pinned by the first antiferromagnetic layer; a nonmagnetic conductive layer; a free magnetic layer, the magnetization direction thereof being variable in response to an external magnetic field; a nonmagnetic interlayer; a ferromagnetic layer; and a second antiferromagnetic layer. The laminate has a recess extending through the second antiferromagnetic layer and the ferromagnetic layer, a bottom face of the recess lying in the nonmagnetic interlayer, the width of the bottom face in a track width direction being equal to a track width. The free magnetic layer is magnetized in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer as a result of magnetic coupling with the ferromagnetic layer. A method for making such a magnetic sensing element is also disclosed.
摘要翻译：磁传感元件包括层压体，层压体包括第一反铁磁性层; 被钉扎的磁性层，其磁化方向由第一反铁磁层固定; 非磁性导电层; 自由磁性层，其磁化方向响应于外部磁场而变化; 非磁性中间层; 铁磁层; 和第二反铁磁层。层压体具有延伸穿过第二反铁磁层和铁磁层的凹部，位于非磁性中间层中的凹部的底面，轨道宽度方向上的底面的宽度等于轨道宽度。由于与铁磁层的磁耦合，自由磁性层在与被钉扎的磁性层的磁化方向大致正交的方向上被磁化。还公开了一种用于制造这种磁传感元件的方法。

79. 发明授权

US06607641B2 Method of producing exchange coupling film and method of producing magnetoresistive sensor by using the exchange coupling film 失效
标题翻译：制造交换耦合膜的方法和使用交换耦合膜制造磁阻传感器的方法
公开(公告)号：US06607641B2
公开(公告)日：2003-08-19
申请号：US09833459
申请日：2001-04-11
申请人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
发明人： Masamichi Saito , Naoya Hasegawa , Yosuke Ide , Kenichi Tanaka
IPC分类号： C23C1434
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3954 , H01F10/123 , H01F10/3218 , H01F41/304
摘要： An exchange coupling film includes a first antiferromagnetic layer formed on a pinned magnetic layer, and a second antiferromagnetic layer formed thereon. A composition ratio of an element X in the first antiferromagnetic layer is larger than that of the second antiferromagnetic layer. Preferably, a non-aligned state is created at an interface between the first antiferromagnetic layer and the pinned magnetic layer, whereby a large exchange coupling magnetic field is obtained upon heat-treatment.
摘要翻译：交换耦合膜包括形成在钉扎磁性层上的第一反铁磁层和形成在其上的第二反铁磁层。第一反铁磁性层中的元素X的组成比大于第二反铁磁层的组成比。优选地，在第一反铁磁性层和被钉扎的磁性层之间的界面处产生非对准状态，由此在热处理时获得大的交换耦合磁场。

80. 发明授权

US08124253B2 Tunneling magnetic sensing element including MGO film as insulating barrier layer 有权
标题翻译：隧道磁传感元件包括MGO膜作为绝缘阻挡层
公开(公告)号：US08124253B2
公开(公告)日：2012-02-28
申请号：US12615689
申请日：2009-11-10
申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3272 , Y10T428/1114 , Y10T428/1143 , Y10T428/1193 , Y10T428/266 , Y10T428/31678
摘要： A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.
摘要翻译：隧道磁传感元件包括层叠体，其中从下面依次层叠下层，种子层，反铁磁层，钉扎磁性层，绝缘阻挡层和自由磁性层。绝缘阻挡层由Mg-O制成。底层由Ti制成，种子层由选自Ni-Fe-Cr和Ru的一种制成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式