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    • 71. 发明授权
    • Automobile air conditioner
    • 汽车空调
    • US5127238A
    • 1992-07-07
    • US602092
    • 1990-10-25
    • Toru IchikawaHideo NishihataNobuyuki YamamotoNaoki Nakamura
    • Toru IchikawaHideo NishihataNobuyuki YamamotoNaoki Nakamura
    • B60H1/00B60H1/32
    • B60H1/00871B60H1/3204
    • An automobile air conditioner for use in an automobile which has a generally rectangular box casing curved along a curvature of the ceiling of automobile and having an air inlet and an air outlet defined at opposite sides thereof, a generally elongated evaporator accommodated in the casing adjacent to the air inlet, a cylindrical blade wheel connected with a motor with their axes in a alignment for generating air flow through the evaporator, a stabilizer extending under the fan unit toward the air outlet, an air flow deflector for controlling the direction of air flow between the fan unit and the air outlet, and a diffuser with a beam on its lower surface for controlling the air flow above the cylindrical blade wheel toward the air outlet. By this structure, a flat and compact type of air conditioner for use in an automobile is provided.
    • 一种用于汽车的汽车空调器,其具有沿着汽车天花板的曲率弯曲的大致矩形的箱体壳体,并且具有限定在其相对侧的空气入口和空气出口,容纳在壳体中的大致细长的蒸发器, 空气入口,与电动机连接的圆柱形叶轮,其轴线对准以产生通过蒸发器的空气流;稳定器,其在风扇单元下方朝向空气出口延伸;空气导流板,用于控制空气流动方向 风扇单元和空气出口,以及在其下表面上具有梁的扩散器,用于控制圆柱形叶轮上方的气流朝向空气出口。 通过这种结构,提供了一种用于汽车的扁平且紧凑型的空调。
    • 77. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US09008140B2
    • 2015-04-14
    • US13798376
    • 2013-03-13
    • Naoki Nakamura
    • Naoki Nakamura
    • H01S5/00H01S5/323H01L33/30H01S5/22H01S5/227
    • H01S5/323H01L33/30H01S5/2226H01S5/2275H01S5/3235
    • A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer.
    • 半导体激光器包括:p型半导体衬底; 在半导体衬底上具有有源层和包层的脊; 嵌入脊的侧表面的电流阻挡层; 和脊上的n型接触层和电流阻挡层。 电流阻挡层按顺序包括第一p型层,n型层或空穴俘获绝缘半导体层,第二p型层,扩散抑制层和第三p型层, 从半导体衬底。 n型接触层包括位于n型接触层的与第三p型层接触的部分中的p型反转区域。 第三p型层中的掺杂剂扩散到p型反转区域。 扩散抑制层是未掺杂的半导体材料或半绝缘半导体材料,并且抑制第三p型层中的掺杂剂扩散到有源层中。
    • 78. 发明申请
    • SEMICONDUCTOR LASER AND METHOD FOR MANUFACTURING THE SAME
    • 半导体激光器及其制造方法
    • US20130336350A1
    • 2013-12-19
    • US13798376
    • 2013-03-13
    • Naoki Nakamura
    • Naoki Nakamura
    • H01S5/323H01L33/30
    • H01S5/323H01L33/30H01S5/2226H01S5/2275H01S5/3235
    • A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer.
    • 半导体激光器包括:p型半导体衬底; 在半导体衬底上具有有源层和包层的脊; 嵌入脊的侧表面的电流阻挡层; 和脊上的n型接触层和电流阻挡层。 电流阻挡层按顺序包括第一p型层,n型层或空穴俘获绝缘半导体层,第二p型层,扩散抑制层和第三p型层, 从半导体衬底。 n型接触层包括位于n型接触层的与第三p型层接触的部分中的p型反转区域。 第三p型层中的掺杂剂扩散到p型反转区域。 扩散抑制层是未掺杂的半导体材料或半绝缘半导体材料,并且抑制第三p型层中的掺杂剂扩散到有源层中。
    • 80. 发明申请
    • FLEXIBLE PRINTED BOARD
    • 柔性印刷板
    • US20100212938A1
    • 2010-08-26
    • US12698635
    • 2010-02-02
    • Naoki NakamuraShigeru SuginoNobuo TaketomiRyo Kanai
    • Naoki NakamuraShigeru SuginoNobuo TaketomiRyo Kanai
    • H05K1/02
    • H05K1/118H05K1/0281H05K1/117H05K2201/09709H05K2201/09727H05K2201/09781H05K2201/2009
    • A flexible printed board includes a base material, first conductive pads arranged along an imaginary line on the base material and extending with a first width from front end to rear end on a front side of the imaginary line, second conductive pads arranged along the imaginary line and extending with a second width from front end on a rear side of the imaginary line to rear end, first wiring patterns provided between the second conductive pads, and extending with a third width to front end connected to the rear ends of the first conductive pads, and a reinforcing layer for reinforcing a reinforcing area over the first conductive pads and the first wiring patterns, and having a front edge on a front side of rear ends of the first conductive pads and a rear edge on a rear side of the rear ends of the second conductive pads.
    • 柔性印刷电路板包括基材,第一导电焊盘沿着假想线布置在基体材料上并且沿着假想线的前侧从前端到后端的第一宽度延伸,沿假想线布置的第二导电焊盘 并且以假想线的后侧的前端延伸到第二宽度,第一布线图案设置在第二导电焊盘之间,并且第三宽度延伸到连接到第一导电焊盘的后端的前端 ,以及用于加强第一导电焊盘和第一布线图案上的加强区域的加强层,并且在第一导电焊盘的后端的前侧具有前边缘,在后端的后侧具有后边缘 的第二导电焊盘。