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71. 发明授权

US06489552B2 Photovoltaic cell module tile 有权
标题翻译：光伏电池模块瓦
公开(公告)号：US06489552B2
公开(公告)日：2002-12-03
申请号：US09998886
申请日：2001-11-19
申请人： Takeharu Yamawaki , Teruki Hatsukaiwa , Fumihiro Tanigawa , Isao Yoshida
发明人： Takeharu Yamawaki , Teruki Hatsukaiwa , Fumihiro Tanigawa , Isao Yoshida
IPC分类号： H01L3104
CPC分类号： E04D1/30 , F24S20/69 , F24S25/636 , F24S25/67 , H02S20/25 , Y02B10/12 , Y02B10/20 , Y02E10/47 , Y10S136/291
摘要： A photovoltaic cell module tile that includes a tile body, a recess, a fitting section, and a pressure member. The recess is provided in a top surface of the tile body, which stores a photovoltaic cell module. The fitting section is provided in the recess on an eaves side of the tile body. An eaves-side end portion of the photovoltaic cell module is inserted and fitted in the fitting section. The pressure member is provided on a ridge side of the tile body and presses a ridge-side end portion of the photovoltaic cell module against the tile body.
摘要翻译：一种光伏电池模块瓦片，其包括瓦片体，凹部，配合部分和压力构件。凹槽设置在瓦片体的顶表面中，其存储光伏电池模块。嵌合部设置在瓦体的檐侧的凹部中。光伏电池模块的檐侧端部插入并安装在装配部中。压力构件设置在瓦片体的脊侧，并将太阳能电池模块的脊侧端部压靠在瓦片体上。

72. 发明授权

US06385025B2 Insulated gate type semiconductor apparatus with a control circuit 失效
标题翻译：具有控制电路的绝缘栅型半导体装置
公开(公告)号：US06385025B2
公开(公告)日：2002-05-07
申请号：US09797983
申请日：2001-03-05
申请人： Kozo Sakamoto , Isao Yoshida
发明人： Kozo Sakamoto , Isao Yoshida
IPC分类号： H02H300
CPC分类号： H03K17/0828 , H03K17/0822 , H03K2017/0806
摘要： A semiconductor apparatus such as a power MOSFET, an IGBT, or the like is provided having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. To prevent erroneous operation, the control circuit controls so that when the voltage of a gate terminal is positive relative to that of a source terminal, a first switch circuit is turned on, when the voltage of the gate terminal is negative relative to that of the source terminal, a second switch circuit is turned on, and when the gate terminal and the source terminal have an almost same potential and a drain terminal has a high potential, the second switch circuit is turned on, thereby reducing leakage current from the drain terminal to the gate terminal.
摘要翻译：提供诸如功率MOSFET，IGBT等的半导体装置，其中具有诸如过热保护电路和过电流保护电路的控制电路，其实现高速操作和防止错误由寄生器件引起的操作。为了防止错误操作，控制电路进行控制，使得当栅极端子的电压相对于源极端子的电压为正时，第一开关电路导通，当栅极端子的电压相对于栅极端子的电压为负时源极端子，第二开关电路导通，并且当栅极端子和源极端子具有几乎相同的电位且漏极端子具有高电位时，第二开关电路导通，从而减少漏极端子的漏电流到门终端。

73. 发明授权

US06361462B1 V-ribbed power transmission belt 有权
标题翻译： V型动力传动带
公开(公告)号：US06361462B1
公开(公告)日：2002-03-26
申请号：US09490480
申请日：2000-01-24
申请人： Toshimichi Takada , Kazutoshi Ishida , Yorifumi Hineno , Isao Yoshida
发明人： Toshimichi Takada , Kazutoshi Ishida , Yorifumi Hineno , Isao Yoshida
IPC分类号： F16G506
CPC分类号： B32B25/02 , F16G5/20
摘要： A power transmission belt having a body with a length, an inside, an outside, and laterally spaced sides. The body has a bonding rubber layer in which elongate load carrying cords are embedded to extend lengthwise of the body. The body has a first layer on the inside of the bonding rubber layer in which a plurality of laterally spaced ribs are formed extending lengthwise of the body, and a second layer on the outside of the bonding rubber layer in which a plurality of laterally spaced ribs are formed extending lengthwise of the body. The bonding rubber layer has a sulfur-crosslinked rubber composition including an ethylene-&agr;-olefin elastomer. At least one of the first and second layers has a crosslinking product that is an organic peroxide-crosslinked rubber composition including an ethylene-&agr;-olefin elastomer.
摘要翻译：一种动力传动带，其具有长度，内侧，外侧和侧向间隔开的主体。主体具有接合橡胶层，其中细长载荷承载绳被嵌入以延伸到身体的纵向。主体在接合橡胶层的内侧具有第一层，其中沿主体纵向延伸形成有多个横向隔开的肋，以及在接合橡胶层的外侧上的第二层，其中多个横向隔开的肋形成在身体纵向延伸。接合橡胶层具有包含乙烯-α-烯烃弹性体的硫交联橡胶组合物。第一层和第二层中的至少一层具有交联产物，其是包含乙烯-α-烯烃弹性体的有机过氧化物交联的橡胶组合物。

74. 发明授权

US06360497B1 Photovoltaic cell module tile 有权
标题翻译：光伏电池模块瓦
公开(公告)号：US06360497B1
公开(公告)日：2002-03-26
申请号：US09619366
申请日：2000-07-19
申请人： Ichiro Nakazima , Teruki Hatsukaiwa , Fumihiro Tanigawa , Takuji Nomura , Isao Yoshida , Kazuhito Hirai
发明人： Ichiro Nakazima , Teruki Hatsukaiwa , Fumihiro Tanigawa , Takuji Nomura , Isao Yoshida , Kazuhito Hirai
IPC分类号： E04D1318
CPC分类号： E04D1/24 , E04D1/28 , H02S20/25 , H02S40/34 , Y02B10/12 , Y10S136/291
摘要： The upper surface of a tile body for use as a roofing material for a building is provided with a depression that holds therein a photovoltaic cell module having a function to convert solar energy into electrical energy. An adhesive is applied to the whole or part of the base of the depression, and the photovoltaic cell module, which has a terminal box on its lower surface, is fixed to the base of the depression by adhesive bonding.
摘要翻译：用作建筑物的屋顶材料的瓦片体的上表面设置有凹部，该凹部保持具有将太阳能转换成电能的功能的光伏电池模块。将粘合剂施加到凹部的整个或一部分基底，并且在其下表面具有接线盒的光伏电池模块通过粘合固定到凹部的基部。

75. 发明授权

US06201677B1 Insulated gate type semiconductor apparatus with a control circuit 失效
标题翻译：具有控制电路的绝缘栅型半导体装置
公开(公告)号：US06201677B1
公开(公告)日：2001-03-13
申请号：US09489736
申请日：2000-01-21
申请人： Kozo Sakamoto , Isao Yoshida
发明人： Kozo Sakamoto , Isao Yoshida
IPC分类号： H02H308
CPC分类号： H03K17/0828 , H03K17/0822 , H03K2017/0806
摘要： There is disclosed a semiconductor apparatus such as a power MOSFET, an IGBT, or the like having therein a control circuit such as an over-heating protection circuit and an over-current protection circuit, which realizes both of high-speed operation and prevention of erroneous operation caused by a parasitic device. In order to prevent erroneous operation of a power MOSFET 30 and a protection circuit 21 caused by a parasitic npn transistor 29 of an MOSFET 32, a control circuit 20 controls so that when the voltage of a gate terminal 2 is positive relative to that of a source terminal 3, a switch circuit SW3 is turned on, when the voltage of the gate terminal 2 is negative relative to that of the source terminal 3, a switch circuit SW2 is turned on, and when the gate terminal 2 and the source terminal 3 have an almost same potential and a drain terminal 1 has a high potential, the switch circuit SW2 is turned on. By adding such a control circuit, an insulated gate semiconductor apparatus having therein the protection circuit according to the invention can reduce a leakage current flowing from the drain terminal to the gate terminal when a negative voltage is applied to the gate and can operate at high speed without causing drop of a drain breakdown voltage.
摘要翻译：公开了具有诸如过热保护电路和过电流保护电路等控制电路的功率MOSFET，IGBT等半导体装置，实现了高速运行和防止由寄生器件引起的错误操作。为了防止由MOSFET32的寄生npn晶体管29引起的功率MOSFET 30和保护电路21的错误操作，控制电路20控制，使得当栅极端子 2相对于源极端子3是正的，开关电路SW3导通，当栅极端子2的电压相对于源极端子3的电压为负时，开关电路SW2导通，并且当栅极端子2和源极端子3具有几乎相同的电位，并且漏极端子1具有高电位，开关电路SW2导通。通过添加这种控制电路，绝缘栅极半导体装置h 其中根据本发明的保护电路可以减小当向栅极施加负电压时能够从漏极端子流到栅极端子的漏电流，并且可以在不引起漏极击穿电压下降的情况下高速工作。

76. 外观设计

USD414498S Internal combustion engine 失效
公开(公告)号：USD414498S
公开(公告)日：1999-09-28
申请号：US90677
申请日：1998-07-14
申请人： Isao Yoshida
设计人： Isao Yoshida

77. 外观设计

USD398010S Internal combustion engine 失效
公开(公告)号：USD398010S
公开(公告)日：1998-09-08
申请号：US70653
申请日：1997-05-13
申请人： Isao Yoshida , Masahiro Anzai
设计人： Isao Yoshida , Masahiro Anzai

78. 发明授权

US5638246A Semiconductor device having a protection circuit, and electronic system including the same 失效
标题翻译：具有保护电路的半导体装置和包括该保护电路的电子系统
公开(公告)号：US5638246A
公开(公告)日：1997-06-10
申请号：US10572
申请日：1993-01-28
申请人： Kozo Sakamoto , Isao Yoshida , Masatoshi Morikawa , Shigeo Ohtaka , Hideki Tsunoda
发明人： Kozo Sakamoto , Isao Yoshida , Masatoshi Morikawa , Shigeo Ohtaka , Hideki Tsunoda
IPC分类号： H02H5/04 , H03K17/08 , H03K17/082
CPC分类号： H02H5/044 , H03K17/0822 , H03K2017/0806
摘要： In a semiconductor device including a power MOSFET (M.sub.0) for the output stage, a temperature detection circuit produces an output signal upon detecting an abnormal rise in the chip temperature, the signal turns on a set input element (M.sub.1) in a latch circuit so that the latch circuit becomes a set state, the set output of the latch circuit turns on a control element (M.sub.5), causing the power MOSFET to become non-conductive so that it is protected from destruction. The latch circuit is not brought to a reset state even if the external gate terminal of the device is brought to zero volt. With a voltage outside the range of the normal input signal, e.g., a large negative voltage, being applied to the external gate terminal, the gate capacitance of the control element (M.sub.5) discharges, and consequently the latch circuit is brought to the reset state and the protective operation is cancelled. The semiconductor device is further provided with an external reset terminal, and the protective operation can also be cancelled through the application of a reset signal to the external reset terminal. The semiconductor device is protected from destruction and also from deterioration of characteristics of the power MOSFET (M.sub.0), and yet the protective operation is not cancelled erroneously by the normal input signal.
摘要翻译：在包括用于输出级的功率MOSFET（M0）的半导体器件中，温度检测电路在检测到芯片温度的异常升高时产生输出信号，该信号使锁存电路中的设定输入元件（M1）接通，从而锁存电路变为置位状态，锁存电路的设定输出导通控制元件（M5），使功率MOSFET变得不导通，从而防止其破坏。即使器件的外部栅极端子达到零伏，锁存电路也不会进入复位状态。在外部栅极端子施加正常输入信号（例如，大的负电压）的范围之外的电压时，控制元件（M5）的栅极电容放电，因此锁存电路进入复位状态并且保护操作被取消。半导体器件还具有外部复位端子，并且还可以通过向外部复位端子施加复位信号来取消保护操作。保护半导体器件不受破坏，也可以防止功率MOSFET（M0）的特性恶化，而保护操作也不会被正常输入信号错误地消除。

79. 发明授权

US5264053A Production method for a vehicular endless track bushing 失效
标题翻译：车辆环形轨道衬套的生产方法
公开(公告)号：US5264053A
公开(公告)日：1993-11-23
申请号：US941262
申请日：1992-09-04
申请人： Masahiro Nakajima , Hisahiko Kusano , Isao Yoshida , Yoshio Hamajima , Hiroyuki Takeno
发明人： Masahiro Nakajima , Hisahiko Kusano , Isao Yoshida , Yoshio Hamajima , Hiroyuki Takeno
IPC分类号： B62D55/205 , C21D9/14 , C21D1/10 , C21D1/18
CPC分类号： C21D9/14 , B62D55/205
摘要： A production method for an endless track bushing wherein high-carbon low-alloy steel is selected as a bushing material, the bushing material is quench-hardened without pre-carburizing the bushing material, and then tempered. In the quench-hardening, the bushing material is induction-heated from an outside surface of the bushing material only so that an inside surface of the bushing material is heated to a temperature above and close to a transformation temperature of the high-carbon low-alloy steel, and then the heated bushing material is cooled from the outside surface of the bushing material only so that a residual compressive stress is produced at the inside surface of the bushing material when it has been cooled to an ambient temperature. The thus produced bushing has a high hardness throughout the entire cross section and a high toughness.
摘要翻译：选择高碳低合金钢作为衬套材料的环形履带衬套的制造方法，将衬套材料淬火硬化而不对衬套材料进行预渗碳，然后回火。在淬火硬化中，衬套材料仅从衬套材料的外表面进行感应加热，使得衬套材料的内表面被加热到高于和接近高碳低温转变温度的转变温度的温度，合金钢，然后加热的衬套材料仅从衬套材料的外表面冷却，使得当衬套材料已被冷却到环境温度时，在衬套材料的内表面产生残留的压缩应力。由此制造的衬套在整个横截面上具有高硬度和高韧性。

80. 发明授权

US5021890A Method of and apparatus for facsimile communications 失效
标题翻译：传真通讯方法及装置
公开(公告)号：US5021890A
公开(公告)日：1991-06-04
申请号：US326801
申请日：1989-03-21
申请人： Isao Yoshida , Hidetoshi Inoue , Kanji Arai
发明人： Isao Yoshida , Hidetoshi Inoue , Kanji Arai
IPC分类号： H04N1/00 , H04M11/00 , H04N1/32 , H04N1/333
CPC分类号： H04N1/33346 , H04N1/33307
摘要： Stable facsimile communications and reduced deterioration in image quality are achieved, when standard facsimile apparatuses communicate using a communication network composed a subnetwork with relatively good transmission quality such as a wire system and a subnetwork with relatively bad transmission quality such a mobile system subnetwork, both subnetworks being interspersed between the facsimile apparatuses, by inserting a pair of FAX signal converting apparatuses into the communication channel between the facsimile apparatuses for error control responsive to the quality of the channel in use.

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