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    • 80. 发明授权
    • Fabrication of a semiconductor device having an enhanced well region
    • 具有增强阱区域的半导体器件的制造
    • US08765544B2
    • 2014-07-01
    • US13604207
    • 2012-09-05
    • Akira Ito
    • Akira Ito
    • H01L21/04H01L21/8238H01L29/10H01L29/78H01L29/66H01L29/06H01L29/08
    • H01L29/7835H01L29/0653H01L29/0847H01L29/1045H01L29/105H01L29/66659
    • An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes an enhanced well region to effectively increase a voltage at which punch-through occurs when compared to a conventional semiconductor device. The enhanced well region includes a greater number of excess carriers when compared to a well region of the conventional semiconductor device. These larger number of excess carriers attract more carriers allowing more current to flow through a channel region of the semiconductor device before depleting the enhanced well region of the carriers. As a result, the semiconductor device may accommodate a greater voltage being applied to its drain region before the depletion region of the enhanced well region and a depletion region of a well region surrounding the drain region merge into a single depletion region.
    • 公开了一种用于增加半导体器件的击穿电压的装置。 半导体器件包括增强的阱区域,以便与传统的半导体器件相比有效地增加穿通的电压。 当与常规半导体器件的阱区相比时,增强阱区包括更多数量的过量载流子。 这些更大数量的过量载流子吸引更多的载流子,允许更多的电流流过半导体器件的沟道区域,然后消耗载流子的增强阱区域。 结果,半导体器件可以容纳在增强阱区的耗尽区之前施加到其漏极区的更大的电压,并且围绕漏极区的阱区的耗尽区合并成单个耗尽区。