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71. 发明申请

US20090174876A1 OPTICAL APPARATUS AND METHOD FOR MODIFYING THE IMAGING BEHAVIOR OF SUCH APPARATUS 有权
标题翻译：用于修改这种装置的成像行为的光学装置和方法
公开(公告)号：US20090174876A1
公开(公告)日：2009-07-09
申请号：US12357126
申请日：2009-01-21
申请人： Martin Schriever , Ulrich Wegmann , Stefan Hembacher , Bernhard Geuppert , Juergen Huber , Norbert Kerwien , Michael Totzeck , Markus Hauf
发明人： Martin Schriever , Ulrich Wegmann , Stefan Hembacher , Bernhard Geuppert , Juergen Huber , Norbert Kerwien , Michael Totzeck , Markus Hauf
IPC分类号： G03B27/72 , G02B26/00
CPC分类号： G03F7/70825 , G03F7/70041 , G03F7/70266
摘要： The disclosure relates to an optical apparatus including a light source that emits light in the form of light pulses having a pulse frequency, and including at least one optical element. The disclosure also relates to a projection exposure machine including a pulsed light source and a projection objective, and to a method for modifying the imaging behavior of such an apparatus, such as in a projection exposure machine.
摘要翻译：本发明涉及一种光学装置，其包括以具有脉冲频率的光脉冲形式发光的光源，并且包括至少一个光学元件。本公开还涉及包括脉冲光源和投影物镜的投影曝光机，以及用于修改诸如投影曝光机中的这种装置的成像行为的方法。

72. 发明申请

US20090073398A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置
公开(公告)号：US20090073398A1
公开(公告)日：2009-03-19
申请号：US12210514
申请日：2008-09-15
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
IPC分类号： G03B27/52 , G03B27/72
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译：本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。微光刻投影曝光装置包括照明系统和投影物镜。照明系统可以照亮布置在投影物镜的物平面中的掩模。掩模可以具有待成像的结构。该方法可以包括用光照射照明系统的光瞳平面。该方法还可以包括在投影物镜的平面中修改通过该平面的光的相位，幅度和/或极化。可以以相互不同的方式对至少两个衍射级进行修改。与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

73. 发明申请

US20090021719A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置
公开(公告)号：US20090021719A1
公开(公告)日：2009-01-22
申请号：US12146200
申请日：2008-06-25
申请人： Damian Fiolka , Michael Totzeck , Alexandra Pazidis , Michael Ricker
发明人： Damian Fiolka , Michael Totzeck , Alexandra Pazidis , Michael Ricker
IPC分类号： G03B27/72
CPC分类号： G03F7/70083 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus, as well as related components and methods. In some embodiments, a microlithographic projection exposure apparatus includes an illumination system and a projection objective, where the illumination system can illuminate an object plane of the projection objective and the projection objective can produce the image of the object plane on an image plane. A polarization-dependent transmission can be produced in the illumination system such that, for at least one polarization distribution in respect of the light impinging on the object plane, a non-homogeneous intensity distribution in the object plane is obtained. The non-homogeneous intensity distribution can afford a homogeneous intensity distribution in the image plane by virtue of polarization-dependent transmission properties of the projection objective.
摘要翻译：本公开涉及微光刻投影曝光装置，以及相关的部件和方法。在一些实施例中，微光刻投影曝光装置包括照明系统和投影物镜，其中照明系统可照亮投影物镜的物平面，并且投影物镜可在像平面上产生物平面的图像。可以在照明系统中产生偏振相关的透射，使得对于相对于物体平面上的光的至少一个偏振分布，获得物平面中的非均匀强度分布。非均匀强度分布可以通过投影物镜的偏振依赖透射特性在图像平面中提供均匀的强度分布。

74. 发明申请

US20080002172A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 审中-公开
标题翻译：微波投影曝光装置
公开(公告)号：US20080002172A1
公开(公告)日：2008-01-03
申请号：US11855526
申请日：2007-09-14
申请人： Michael Totzeck
发明人： Michael Totzeck
IPC分类号： G03F7/20
CPC分类号： G03F7/70566 , G03F7/70308
摘要： A microlithographic projection exposure apparatus comprises an illumination system for generating projection light, a projection lens for imaging a reticle onto a light-sensitive surface and an optical element arranged in the projection lens and adapted for setting a desired polarization of the projection light. The optical element has a support and at least one layer, which is arranged thereon, through which the projection light can pass and which has shape-birefringent grating patterns, the distance of which from one another is less than the wavelength of the projection light. The arrangement of the grating patterns varies locally within the at least one layer. The optical element makes it possible to compensate almost completely for undesired influences of birefringent optical components such as, for example, lenses made from CaF2.
摘要翻译：微光刻投影曝光装置包括用于产生投影光的照明系统，用于将光罩成像到感光表面上的投影透镜和布置在投影透镜中的光学元件，并且适于设置投影光的期望偏振。光学元件具有支撑体和至少一层，其上布置有投影光可以通过的至少一层，并且具有形状双折射光栅图案，其彼此的距离小于投影光的波长。光栅图案的布置在至少一个层内局部变化。光学元件使得可以几乎完全地补偿双折射光学部件（例如由CaF 2制成的透镜）的不期望的影响。

75. 发明申请

US20060164621A1 Lithographic apparatus and device manufacturing method 有权
标题翻译：平版印刷设备和器件制造方法
公开(公告)号：US20060164621A1
公开(公告)日：2006-07-27
申请号：US11041873
申请日：2005-01-25
申请人： Michael Totzeck , Bernd Geh , Skip Miller
发明人： Michael Totzeck , Bernd Geh , Skip Miller
IPC分类号： G03B27/72
CPC分类号： G03F7/70966 , G03F7/70566
摘要： A lithographic apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern, a substrate table configured to hold a substrate and a projection system configured to project the beam as patterned onto a target portion of the substrate. The lithographic apparatus further includes a polarization modifier disposed in a path of the beam. The polarization modifier comprises a material having a radially varying birefringence.
摘要翻译：光刻设备包括被配置为保持图案形成装置的支撑结构，所述图案形成装置被配置为根据期望的图案对辐射束进行图案化;衬底台，其被配置为保持衬底;以及投影系统，被配置为将所述光束作为图案投影到基板的目标部分。光刻设备还包括设置在光束的路径中的偏振修正器。偏振调节剂包括具有径向变化的双折射的材料。

76. 发明授权

US08436982B2 Projection objective for microlithography 有权
标题翻译：微光刻的投影目标
公开(公告)号：US08436982B2
公开(公告)日：2013-05-07
申请号：US12723496
申请日：2010-03-12
申请人： Helmut Beierl , Heiko Feldmann , Jochen Hetzler , Michael Totzeck
发明人： Helmut Beierl , Heiko Feldmann , Jochen Hetzler , Michael Totzeck
IPC分类号： G03B27/54 , G03B27/52 , G03B27/42
CPC分类号： G03F7/70341 , G02B1/02 , G02B21/33 , G03F7/70941
摘要： A projection objective for microlithography includes at least one optical assembly with optical elements which are disposed between an object plane and an image plane. The optical assembly includes at least one optical terminal element, which is disposed close to the image plane. A first immersion liquid is disposed on the image oriented surface of the optical terminal element. A second immersion liquid is disposed on the object oriented surface of the optical terminal element. The object oriented surface includes a first surface section for the imaging light to enter into the terminal element, and the image oriented surface includes a second surface portion for the imaging light to exit from the terminal element.
摘要翻译：用于微光刻的投影物镜包括至少一个具有设置在物平面和像平面之间的光学元件的光学组件。光学组件包括靠近图像平面设置的至少一个光学终端元件。第一浸没液体设置在光学终端元件的图像取向表面上。第二浸没液体设置在光学终端元件的物体取向表面上。面向对象的表面包括用于成像光进入端子元件的第一表面部分，并且图像取向表面包括用于成像光从终端元件退出的第二表面部分。

77. 发明申请

US20120092637A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
标题翻译：微波投影曝光装置
公开(公告)号：US20120092637A1
公开(公告)日：2012-04-19
申请号：US13333350
申请日：2011-12-21
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
IPC分类号： G03B27/54
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译：本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。微光刻投影曝光装置包括照明系统和投影物镜。照明系统可以照亮布置在投影物镜的物平面中的掩模。掩模可以具有待成像的结构。该方法可以包括用光照射照明系统的光瞳平面。该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。可以以相互不同的方式对至少两个衍射级进行修改。与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

78. 发明授权

US08107054B2 Microlithographic projection exposure apparatus 有权
标题翻译：微光刻投影曝光装置
公开(公告)号：US08107054B2
公开(公告)日：2012-01-31
申请号：US12210514
申请日：2008-09-15
申请人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
发明人： Michael Totzeck , Aksel Goehnermeier , Wolfgang Singer , Helmut Beierl , Heiko Feldmann , Hans-Juergen Mann , Jochen Hetzler
IPC分类号： G03B27/72 , G03B27/68 , G03B27/42 , G03B27/52 , G03B27/54 , G03B27/32
CPC分类号： G03F7/70308 , G03F7/70216 , G03F7/70566
摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.
摘要翻译：本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。微光刻投影曝光装置包括照明系统和投影物镜。照明系统可以照亮布置在投影物镜的物平面中的掩模。掩模可以具有待成像的结构。该方法可以包括用光照射照明系统的光瞳平面。该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。可以以相互不同的方式对至少两个衍射级进行修改。与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

79. 发明申请

US20100142042A1 MICROSCOPE AND MICROSCOPY METHOD FOR SPACE-RESOLVED MEASUREMENT OF A PREDETERMINED STRUCTURE, IN PARTICULAR A STRUCTURE OF A LITHOGRAPHIC MASK 有权
标题翻译：微观结构和微观方法用于预测结构的空间分辨率测量，特别是LITHOGRAPHIC MASK的结构
公开(公告)号：US20100142042A1
公开(公告)日：2010-06-10
申请号：US12517583
申请日：2007-11-20
申请人： Hans-Juergen Mann , Michael Totzeck , Norbert Kerwien
发明人： Hans-Juergen Mann , Michael Totzeck , Norbert Kerwien
IPC分类号： G02B21/06
CPC分类号： G03F7/70625 , G02B21/0092 , G02B21/06 , G02B21/16 , G02B27/28 , G02B27/283 , G03F1/0092 , G03F1/84 , G03F7/70616
摘要： A microscope is provided for space-resolved measurement of a predetermined structure (12), said microscope comprising a source of radiation (2), which emits electromagnetic radiation (3) of a predetermined wavelength, an optical system (13), which irradiates the electromagnetic radiation (3) onto the structure (12) to be measured and images the structure (12), irradiated with the electromagnetic radiation, onto a detector (9), wherein the optical system (13) has two eigen polarization conditions (Z1, Z2), and the apparatus includes a polarization module (4) by which a polarization condition can be set for the electromagnetic radiation (3) of the source of radiation (2), which condition includes only components of a known quantity which correspond to the eigen polarization conditions (Z1, Z2).
摘要翻译：提供了用于对预定结构（12）进行空间分辨测量的显微镜，所述显微镜包括发射预定波长的电磁辐射（3）的辐射源（2），光学系统（13），其照射将电磁辐射（3）放置在要测量的结构（12）上并将照射有电磁辐射的结构（12）成像到检测器（9）上，其中光学系统（13）具有两个特征极化条件（Z1， Z2），并且该装置包括偏振模块（4），通过该偏振模块可以为辐射源（2）的电磁辐射（3）设置偏振条件，该条件仅包括已知量的对应于特征极化条件（Z1，Z2）。

80. 发明授权

US07474469B2 Arrangement of optical elements in a microlithographic projection exposure apparatus 失效
标题翻译：微光刻投影曝光装置中的光学元件的布置
公开(公告)号：US07474469B2
公开(公告)日：2009-01-06
申请号：US11232606
申请日：2005-09-22
申请人： Michael Totzeck , Gerhart Fuerter , Olaf Dittmann , Karl-Heinz Schuster , David Shafer , Susanne Beder , Wolfgang Singer
发明人： Michael Totzeck , Gerhart Fuerter , Olaf Dittmann , Karl-Heinz Schuster , David Shafer , Susanne Beder , Wolfgang Singer
IPC分类号： G02B3/12 , G02B3/00
CPC分类号： G02B3/12 , G02B17/0812 , G02B17/0856 , G03F7/70225 , G03F7/70241 , G03F7/70341 , G03F7/70958 , G03F7/70966
摘要： The invention relates to an arrangement of optical elements in a microlithographic projection exposure apparatus, particularly in a projection objective of a microlithographic projection exposure apparatus. The arrangement comprises a rigid first optical element, a rigid second optical element with a first optical surface and a second optical surface on opposite sides and a first liquid. The first optical element has a concave optical surface. The first side of the second optical element is facing the concave optical surface of the first optical element. The first liquid is at least partially filling the space between the first optical element and the second optical element.
摘要翻译：本发明涉及微光刻投影曝光装置中的光学元件的布置，特别是在微光刻投影曝光装置的投影物镜中。该装置包括刚性第一光学元件，具有第一光学表面的刚性第二光学元件和在相对侧上的第二光学表面和第一液体。第一光学元件具有凹面光学表面。第二光学元件的第一面面对第一光学元件的凹面光学表面。第一液体至少部分地填充第一光学元件和第二光学元件之间的空间。

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