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71. 发明授权

US08518718B2 Magnetic spin shift register memory 有权
标题翻译：磁自旋移位寄存器
公开(公告)号：US08518718B2
公开(公告)日：2013-08-27
申请号：US13613313
申请日：2012-09-13
申请人： Eric A. Joseph , Stuart S. P. Parkin , Mary B. Rothwell
发明人： Eric A. Joseph , Stuart S. P. Parkin , Mary B. Rothwell
IPC分类号： H01L21/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1675
摘要： A method for forming a memory device includes forming a cavity having an inner surface with an undulating profile in a substrate, depositing a ferromagnetic material in the cavity, forming a reading element on the substrate proximate to a portion of the ferromagnetic material, and forming a writing element on the substrate proximate to a second portion of the ferromagnetic material.
摘要翻译：一种用于形成存储器件的方法包括：形成具有在衬底中具有波状轮廓的内表面的空腔，在所述空腔中沉积铁磁材料，在所述衬底上形成接近所述铁磁材料的一部分的读取元件，以及形成在基板上的写入元件靠近铁磁材料的第二部分。

72. 发明授权

US08467221B2 Magnetic spin shift register memory 有权
公开(公告)号：US08467221B2
公开(公告)日：2013-06-18
申请号：US12833446
申请日：2010-07-09
申请人： Eric A. Joseph , Stuart S. P. Parkin , Mary B. Rothwell
发明人： Eric A. Joseph , Stuart S. P. Parkin , Mary B. Rothwell
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , G11C11/14 , G11C11/161 , G11C11/1675
摘要： A method for forming a memory device includes forming a cavity having an inner surface with an undulating profile in a substrate, depositing a ferromagnetic material in the cavity, forming a reading element on the substrate proximate to a portion of the ferromagnetic material, and forming a writing element on the substrate proximate to a second portion of the ferromagnetic material.

73. 发明申请

US20130087860A1 BORDERLESS SELF-ALIGNED METAL CONTACT PATTERNING USING PRINTABLE DIELECTRIC MATERIALS 有权
标题翻译：无边界自对准的金属接触方式使用可印制的电介质材料
公开(公告)号：US20130087860A1
公开(公告)日：2013-04-11
申请号：US13270047
申请日：2011-10-10
申请人： Josephine B. Chang , Sebastian U. Engelmann , Nicholas C.M. Fuller , Michael A. Guillorn , Eric A. Joseph , Adam M. Pyzyna
发明人： Josephine B. Chang , Sebastian U. Engelmann , Nicholas C.M. Fuller , Michael A. Guillorn , Eric A. Joseph , Adam M. Pyzyna
IPC分类号： H01L27/092 , H01L21/283
CPC分类号： H01L21/76897 , H01L21/823425 , H01L21/823475
摘要： Borderless self-aligned metal contacts to high density complementary metal oxide semiconductor (CMOS) circuits and methods for constructing the same. An example method includes creating an enclosed region for metal deposition defined by the gates of the adjacent transistors and an opposing pair of dielectric walls adjacent to source regions and drain regions of the adjacent transistors. The method further includes depositing a metal layer within the enclosed region. The metal contacts thus formed are self-aligned to the enclosed regions.
摘要翻译：无边界自对准金属接触高密度互补金属氧化物半导体（CMOS）电路及其构造方法。示例性方法包括为相邻晶体管的栅极形成的用于金属沉积的封闭区域和邻近相邻晶体管的源极区域和漏极区域的相对的一对电介质壁。该方法还包括在封闭区域内沉积金属层。这样形成的金属触点与封闭区域自对准。

74. 发明申请

US20120318649A1 Silicide Micromechanical Device and Methods to Fabricate Same 有权
标题翻译：硅化物微机械装置及其制造方法
公开(公告)号：US20120318649A1
公开(公告)日：2012-12-20
申请号：US13164126
申请日：2011-06-20
申请人： Michael A. Guillorn , Eric A. Joseph , Fei Liu , Zhen Zhang
发明人： Michael A. Guillorn , Eric A. Joseph , Fei Liu , Zhen Zhang
IPC分类号： H01H57/00 , H01L21/285
CPC分类号： B81C1/00666 , B81C1/00952 , H01H1/0094 , H01H2001/0078
摘要： A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a silicon layer disposed over an insulating layer that is disposed on a silicon substrate; releasing a portion of the silicon layer from the insulating layer so that it is at least partially suspended over a cavity in the insulating layer; depositing a metal (e.g., Pt) on at least one surface of at least the released portion of the silicon layer and, using a thermal process, fully siliciding at least the released portion of the silicon layer using the deposited metal. The method eliminates silicide-induced stress to the released Si member, as the entire Si member is silicided. Furthermore no conventional wet chemical etch is used after forming the fully silicided material thereby reducing a possibility of causing corrosion of the silicide and an increase in stiction.
摘要翻译：公开了一种制造诸如MEMS或NEMS开关的机电装置的方法。该方法包括提供设置在设置在硅衬底上的绝缘层上的硅层; 从所述绝缘层释放所述硅层的一部分，使得其至少部分地悬挂在所述绝缘层中的空腔上; 在至少所述硅层的释放部分的至少一个表面上沉积金属（例如Pt），并且使用热处理，使用沉积的金属至少完全硅化硅层的释放部分。当整个Si元件被硅化时，该方法消除了对释放的Si元件的硅化物引起的应力。此外，在形成完全硅化材料之后，也不使用常规的湿化学蚀刻，从而减少引起硅化物腐蚀和粘性增加的可能性。

75. 发明授权

US07755921B2 Method and apparatus for fabricating sub-lithography data tracks for use in magnetic shift register memory devices 有权
标题翻译：用于制造用于磁移位寄存器存储器件的亚光刻数据轨迹的方法和装置
公开(公告)号：US07755921B2
公开(公告)日：2010-07-13
申请号：US11838663
申请日：2007-08-14
申请人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Stuart Stephen Papworth Parkin , Christy S. Tyberg
发明人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Stuart Stephen Papworth Parkin , Christy S. Tyberg
IPC分类号： G11C19/00
CPC分类号： H01L27/222 , B82Y10/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0808 , H01L21/76816 , H01L43/08
摘要： In one embodiment, the invention is a method and apparatus for fabricating sub-lithography data tracks for use in magnetic shift register memory devices. One embodiment of a memory device includes a first stack of dielectric material formed of a first dielectric material, a second stack of dielectric material surrounding the first stack of dielectric material and formed of at least a second dielectric material, and at least one data track for storing information, positioned between the first stack of dielectric material and the second stack of dielectric material, the data track having a high aspect ratio and a substantially rectangular cross section.
摘要翻译：在一个实施例中，本发明是用于制造用于磁移位寄存器存储器件的子光刻数据磁道的方法和装置。存储器件的一个实施例包括由第一电介质材料形成的介电材料的第一叠层，围绕第一电介质材料堆叠并由至少第二电介质材料形成的第二电介质材料叠层，以及至少一个用于存储位于所述第一电介质材料堆叠和所述第二电介质材料堆之间的信息，所述数据轨道具有高纵横比和基本上矩形的横截面。

76. 发明申请

US20090001341A1 Phase Change Memory with Tapered Heater 有权
标题翻译：带锥形加热器的相变存储器
公开(公告)号：US20090001341A1
公开(公告)日：2009-01-01
申请号：US11771501
申请日：2007-06-29
申请人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
发明人： Matthew Breitwisch , Thomas Happ , Eric A. Joseph , Hsiang-Lan Lung , Jan Boris Philipp
IPC分类号： H01L45/00
CPC分类号： H01L45/1675 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144
摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.Another embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.
摘要翻译：本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。本发明的另一实施例包括可配置为用作非易失性存储元件的相变存储器（PCM）结构。该元件包括至少一个底部电极; 在所述底部电极的上表面的至少一部分上的至少一个相变材料层; 以及在所述相变材料层的上表面的至少一部分上的至少一个加热层，其中所述加热器层具有锥形形状，使得所述加热器层的上表面的横截面宽度比加热器层的底表面的与相变材料层接触的横截面宽度。

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