会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 71. 发明申请
    • Laser patterning of light emitting devices and patterned light emitting devices
    • 发光器件和图案化发光器件的激光图案化
    • US20050227379A1
    • 2005-10-13
    • US10815293
    • 2004-04-01
    • Matthew Donofrio
    • Matthew Donofrio
    • B23K26/00B23K26/06B23K26/40H01L21/027H01L21/04H01L33/00H01L33/20H01L33/32H01L21/00H01L29/06H01L31/0328H01L31/0336H01L31/072H01L31/109
    • H01L33/20B23K26/066B23K26/40B23K2101/40B23K2103/50B23K2103/52H01L33/0095H01L33/32Y10S438/94
    • Light extraction features are provided for a light emitting device having a substrate and a semiconductor light emitting element on the substrate by shaping a surface of a layer of semiconductor material utilizing a laser to define three dimensional patterns in the layer of semiconductor material. The layer of semiconductor material may be the substrate. In particular embodiments of the present invention, the surface of the layer of semiconductor material is shaped by applying laser light to the layer of semiconductor material at an energy sufficient to remove material from the layer of semiconductor material. The laser light may also by applied in a blanket manner at a level below the ablation threshold. The application of laser light to the layer of semiconductor material may be followed by etching the substrate. The layer of semiconductor material may be anisotropically etched. A mask could also be patterned utilizing laser light and the layer of semiconductor material etched using the mask. Light emitting devices have three dimensional patterns in a layer of semiconductor material of the device are also provided.
    • 通过使用激光对半导体材料层的表面进行成形以在半导体材料层中形成三维图案,为具有衬底和半导体发光元件的发光器件提供光提取特征。 半导体材料层可以是衬底。 在本发明的特定实施例中,半导体材料层的表面通过以足以从半导体材料层去除材料的能量将激光施加到半导体材料层而成形。 也可以以低于消融阈值的水平以橡皮布方式施加激光。 将激光应用于半导体材料层之后可以蚀刻基板。 可以各向异性地蚀刻半导体材料层。 也可以使用激光对掩模进行图案化,并使用掩模蚀刻半导体材料层。 还提供了发光器件在器件的半导体材料层中具有三维图案。