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71. 发明授权

US07807538B2 Method of forming a silicide layer while applying a compressive or tensile strain to impurity layers 失效
标题翻译：在对杂质层施加压缩或拉伸应变的同时形成硅化物层的方法
公开(公告)号：US07807538B2
公开(公告)日：2010-10-05
申请号：US11898295
申请日：2007-09-11
申请人： Takashi Yamauchi , Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga
发明人： Takashi Yamauchi , Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga
IPC分类号： H01L21/336
CPC分类号： H01L29/66795 , H01L21/26513 , H01L21/324 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/47 , H01L29/66507 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/66643 , H01L29/7833 , H01L29/7848 , H01L29/785
摘要： A metal insulator semiconductor field effect transistor (MISFET) having a strained channel region is disclosed. Also disclosed is a method of fabricating a semiconductor device having a low-resistance junction interface. This fabrication method includes the step of forming a gate electrode above a silicon substrate with a gate insulator film being sandwiched therebetween. Then, form a pair of heavily-doped p (p+) type diffusion layers in or on the substrate surface at both sides of the gate electrode to a concentration of 5×1019 atoms/cm3 or more and yet less than or equal to 1×1021 atoms/cm3. Next, silicidize the p+-type layers by reaction with a metal in the state that each layer is applied a compressive strain.
摘要翻译：公开了具有应变通道区域的金属绝缘体半导体场效应晶体管（MISFET）。还公开了一种制造具有低电阻结界面的半导体器件的方法。该制造方法包括在硅衬底上形成栅电极的步骤，其间夹有栅绝缘膜。然后，在栅电极两侧的基板表面中或其上形成一对重掺杂的p（p +）型扩散层，其浓度为5×1019原子/ cm3以上且小于等于1× 1021原子/ cm3。接下来，在各层施加压缩应变的状态下，通过与金属反应来硅化p +型层。

72. 发明申请

US20090152652A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20090152652A1
公开(公告)日：2009-06-18
申请号：US12323770
申请日：2008-11-26
申请人： Yoshifumi NISHI , Yoshinori Tsuchiya , Takashi Yamauchi , Junji Koga
发明人： Yoshifumi NISHI , Yoshinori Tsuchiya , Takashi Yamauchi , Junji Koga
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4975 , H01L21/26506 , H01L21/28097 , H01L21/28518 , H01L21/28537 , H01L21/324 , H01L21/823814 , H01L21/823835 , H01L21/823842 , H01L23/485 , H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： Described herein is a method of manufacturing a semiconductor device realizing higher performance by reducing contact resistance of an electrode. In the method, a gate insulating film, a gate electrode are formed on a semiconductor substrate. A first metal is deposited substrate, and a metal semiconductor compound layer is formed on the surface of the semiconductor substrate by making the first metal and the semiconductor substrate react each other by a first heat treatment. Ions having a mass equal to or larger than atomic weight of Si are implanted into the metal semiconductor compound layer. A second metal is deposited on the metal semiconductor compound layer. An interface layer is formed by making the second metal segregated at an interface between the metal semiconductor compound layer and the semiconductor substrate by diffusing the second metal through the metal semiconductor compound layer by a second heat treatment.
摘要翻译：这里描述的是通过降低电极的接触电阻来制造实现更高性能的半导体器件的方法。在该方法中，在半导体衬底上形成栅极绝缘膜，栅电极。第一金属是沉积衬底，并且通过使第一金属和半导体衬底通过第一热处理而彼此反应，在半导体衬底的表面上形成金属半导体化合物层。将具有等于或大于Si原子量的质量的离子注入到金属半导体化合物层中。第二金属沉积在金属半导体化合物层上。通过使第二金属通过第二热处理使金属半导体化合物层扩散而使第二金属在金属半导体化合物层和半导体基板之间的界面分离而形成界面层。

73. 发明申请

US20090008726A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20090008726A1
公开(公告)日：2009-01-08
申请号：US12051947
申请日：2008-03-20
申请人： Takashi Yamauchi , Yoshifumi Nishi , Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
发明人： Takashi Yamauchi , Yoshifumi Nishi , Atsuhiro Kinoshita , Yoshinori Tsuchiya , Junji Koga , Koichi Kato
IPC分类号： H01L47/00 , H01L21/425
CPC分类号： H01L21/823814 , H01L21/823807 , H01L21/823821 , H01L21/823835 , H01L21/823842 , H01L29/785
摘要： A method of manufacturing a semiconductor device reducing interface resistance of n-type and p-type MISFETs are provided. According to the method, a gate dielectric film and a gate electrode of the n-type MISFET are formed on a first semiconductor region, a gate dielectric film and a gate electrode of the p-type MISFET are formed on a second semiconductor region, an n-type diffusion layer is formed by ion implantation of As into the first semiconductor region, a first silicide layer is formed by first heat treatment after a first metal containing Ni is deposited on the n-type diffusion layer, the first silicide layer is made thicker by second heat treatment after a second metal containing Ni is deposited on the first silicide layer and second semiconductor region, and third heat treatment is provided after formation of a second silicide layer and ion implantation of B or Mg into the second silicide layer.
摘要翻译：提供了制造半导体器件降低n型和p型MISFET的界面电阻的方法。根据该方法，在第一半导体区域上形成栅极电介质膜和n型MISFET的栅电极，在第二半导体区域上形成p型MISFET的栅极电介质膜和栅电极，通过将As离子注入第一半导体区域形成n型扩散层，在n型扩散层上沉积含有Ni的第一金属之后，通过第一热处理形成第一硅化物层，制作第一硅化物层在第一硅化物层和第二半导体区域上沉积含有Ni的第二金属沉积第二热处理之后，在形成第二硅化物层和在第二硅化物层中离子注入B或Mg之后提供第三热处理。

74. 发明授权

US5747859A Magnetic device and magnetic sensor using the same 失效
公开(公告)号：US5747859A
公开(公告)日：1998-05-05
申请号：US699326
申请日：1996-08-19
申请人： Koichi Mizushima , Teruyuki Kinno , Takashi Yamauchi , Koichiro Inomata
发明人： Koichi Mizushima , Teruyuki Kinno , Takashi Yamauchi , Koichiro Inomata
IPC分类号： H01L29/47 , G01R33/06 , G11B5/33 , G11B5/39 , G11C11/16 , H01F10/08 , H01L29/66 , H01L29/872 , H01L43/08 , H01L29/82 , G11B5/127 , H01L29/84
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/06 , G11B5/3909 , G11B5/3993 , G11C11/16 , H01L29/66984 , H01L43/08 , G11B5/332
摘要： A magnetic sensor has a three-terminal magnetic device consisting of an emitter, a base, and a collector. A semiconductor layer serving as the collector and a magnetic multilayered film serving as the base form a Schottky junction. The magnetic multilayered film has two magnetic films opposing each other with a nonmagnetic film between them. The emitter constructed of a metal film and the base are connected via a tunnel insulating film. The relationship between the magnetization directions in the magnetic films changes in accordance with an external magnetic field, and this changes the value of a current flowing through the magnetic device. The external magnetic field is sensed on the basis of this change in the current value.

75. 发明授权

US5721467A Quantum inclusion effect lateral field emitter 失效
标题翻译：量子夹杂效应横向场发射器
公开(公告)号：US5721467A
公开(公告)日：1998-02-24
申请号：US707454
申请日：1996-09-04
申请人： Li Zhang , Tadashi Sakai , Tomio Ono , Takashi Yamauchi
发明人： Li Zhang , Tadashi Sakai , Tomio Ono , Takashi Yamauchi
IPC分类号： H01J9/02 , H01J1/304 , H01J1/30 , H01J19/24
CPC分类号： H01J1/3042 , H01J2201/30423
摘要： A field emission cold cathode is disclosed which comprises a first thin film formed of an emitting material and second thin films differing in composition from the first thin film, wherein the second thin films are superposed one each on the main surfaces of the first thin film to form a laminated structure, the lateral sides of the laminated structure expose the lateral end parts of the first thin film and the second thin films, and the exposed end parts of the first thin film emit electrons under an electric field. A method for the production of the cold cathode is also disclosed.
摘要翻译：公开了一种场致发射冷阴极，其包括由发光材料形成的第一薄膜和与第一薄膜不同的第二薄膜，其中第二薄膜各自叠置在第一薄膜的主表面上，形成层叠结构，层叠结构的侧面暴露第一薄膜和第二薄膜的侧端部，并且第一薄膜的暴露端部在电场下发射电子。还公开了制造冷阴极的方法。

76. 发明授权

US5416226A Process for the manufacture of trimers of aliphatic aldehyde with chlorinated 2-position 失效
标题翻译：制备具有氯化2-位的脂族醛三聚体的方法
公开(公告)号：US5416226A
公开(公告)日：1995-05-16
申请号：US97755
申请日：1993-07-26
申请人： Takashi Wakasugi , Tadashi Miyakawa , Naka Tonouchi , Fukuichi Suzuki , Takashi Yamauchi
发明人： Takashi Wakasugi , Tadashi Miyakawa , Naka Tonouchi , Fukuichi Suzuki , Takashi Yamauchi
IPC分类号： B01J23/06 , B01J23/14 , C07B61/00 , C07C45/55 , C07C45/60 , C07C45/63 , C07D323/04 , C07D323/06
CPC分类号： C07D323/04 , C07C45/55 , C07C45/60 , C07C45/63
摘要： A process for manufacturing a trimer of a low aliphatic aldehyde having 2-5 carbon atoms and the chlorinated 2-position is disclosed. The process comprises cyclically trimerizing said aliphatic aldehyde with chlorinated 2-position in the presence of a catalyst selected from the group consisting of metallic tin, metallic zinc, zeolite, and Lewis acids. It ensures easy separation of the catalyst from the target trimer and a high yield of the trimer. In addition, the unreacted raw material can be easily recovered.
摘要翻译：公开了一种制备具有2-5个碳原子和氯化2-位的低级脂族醛的三聚物的方法。该方法包括在选自金属锡，金属锌，沸石和路易斯酸的催化剂存在下，用氯化2-位使所述脂族醛循环三聚。它确保了催化剂与目标三聚体的容易分离和高产率的三聚体。此外，未反应的原料可以容易地回收。

77. 发明授权

US5330053A Case for photomask 失效
标题翻译：光掩模案
公开(公告)号：US5330053A
公开(公告)日：1994-07-19
申请号：US88861
申请日：1993-07-07
申请人： Kazuhiro Tabuchi , Hiroyuki Inomata , Takashi Yamauchi
发明人： Kazuhiro Tabuchi , Hiroyuki Inomata , Takashi Yamauchi
IPC分类号： B65D81/02 , G03F1/66 , G03F7/20 , B65D85/48
CPC分类号： G03F1/66 , B65D81/02 , G03F7/70741
摘要： The present invention relates to a case for a photomask to prevent generation of dust which might attach to and stain a photomask or the photomask pellicle. In a case for a photomask comprising a case main unit with an upper opening for accommodating the photomask and a lid for the opening of the case main unit, cushion materials are provided on the inner bottom of the case main unit and on the inner ceiling of the lid. The photomask is elastically squeezed between the cushion materials when accommodated. Thus, shaking and rattling during transportation are prevented to minimize the generation of dust. As the cushion material, a rubber material having a smooth surface on one side and a coarse surface on the other side is used.
摘要翻译：本发明涉及一种用于防止产生可能附着在光掩模或光掩模防护薄膜上的灰尘的光掩模的情况。在包括具有用于容纳光掩模的上开口的壳体主单元和用于打开壳体主单元的盖的光掩模的情况下，缓冲材料设置在壳体主单元的内底部和内壳体的内部天花板上盖子。容纳时，光掩模在缓冲材料之间弹性挤压。因此，防止了运输过程中的抖动和晃动，从而使粉尘的产生最小化。作为缓冲材料，使用在一侧具有平滑表面和另一侧具有粗糙表面的橡胶材料。

78. 发明授权

US5258905A Expanded programmable machine controller 失效
标题翻译：扩展可编程机控制器
公开(公告)号：US5258905A
公开(公告)日：1993-11-02
申请号：US768863
申请日：1991-09-27
申请人： Takashi Yamauchi , Akira Sakagami, deceased , Atsushi Koike
发明人： Takashi Yamauchi , Akira Sakagami, deceased , Atsushi Koike
IPC分类号： G05B19/05 , G05B19/414
CPC分类号： G05B19/05 , G05B19/4147
摘要： An expanded programmable memory controller (PMC) is provided outside a numerical control device and connected to a main body programmable machine controller (PMC) which is inside the numerical control apparatus. The expanded programmable machine controller has a first sequence program, a second sequence program and a switching control mechanism. The first sequence program controls equipment connected to the expanded PMC. The second sequence program pseudo-executes an operation performed by the main body PMC. The switching control mechanism performs switching operation when an I/O signal of the first sequence program is supplied to or received from the main body PMC and when the I/O signal of the first sequence program is supplied to or received from the second sequence program so that when supplied to or received from the second sequence program, the first sequence and the second sequence programs are alternatively executed.
摘要翻译： PCT No.PCT / JP91 / 00124 Sec。 371日期1991年9月27日 102（e）1991年9月27日PCT 1991年1月31日PCT PCT。公开号WO91 / 11759 日期为1991年8月8日。扩展可编程存储器控制器（PMC）位于数控设备外部，并与数控机床内的主体可编程控制器（PMC）连接。扩展的可编程机器控制器具有第一顺序程序，第二顺控程序和切换控制机构。第一个顺序程序控制连接到扩展的PMC的设备。第二序列程序伪执行由主体PMC执行的操作。当第一序列程序的I / O信号被提供给主体PMC或从主体PMC接收时，切换控制机构执行切换操作，并且当第一序列程序的I / O信号被提供给第二序列程序或从第二序列程序接收时使得当提供给第二序列程序或从第二序列程序接收时，交替地执行第一序列和第二序列程序。

79. 发明授权

US5253140A Connector unit for input/output module of programmable controller having disengagement lever 失效
标题翻译：具有分离杆的可编程控制器的输入/输出模块的连接器单元
公开(公告)号：US5253140A
公开(公告)日：1993-10-12
申请号：US774523
申请日：1991-10-08
申请人： Michiya Inoue , Takashi Yamauchi
发明人： Michiya Inoue , Takashi Yamauchi
IPC分类号： H05K7/14 , H05K7/10 , H01R4/50 , H01R13/629
CPC分类号： H05K7/1468 , H05K7/1474 , Y10T16/473
摘要： An I/O unit has a fixed unit such as a housing provided with a multiplicity of connection terminals and an LED display module unit. A mounting/dismounting unit is provided with a terminal block including connection terminals to be coupled with the connection terminals of the fixed unit. The mounting/dismounting unit has a hinge disposed at an end thereof and the fixed unit has a pin and a grip capable of being engaged with the hinge. The grip is pulled out to a position to be used and then further pulled out, whereby the mounting/dismounting unit is forced out, drawing an arc about the pin and separated from the fixed unit. With this arrangement, an I/O module with a mounting/dismounting unit capable of being easily removed is provided.
摘要翻译： I / O单元具有诸如设置有多个连接端子的壳体和LED显示模块单元的固定单元。安装/拆卸单元设置有包括要与固定单元的连接端子连接的连接端子的端子块。安装/拆卸单元具有设置在其端部的铰链，并且固定单元具有能够与铰链接合的销和把手。将把手拉出到要使用的位置，然后进一步拉出，从而将安装/拆卸单元拉出来，围绕销引出弧并与固定单元分离。通过这种布置，提供了具有能够容易地移除的安装/拆卸单元的I / O模块。

80. 发明授权

US5207265A Apparatus for continuous casting of metal strip 失效
标题翻译：连续铸造金属条的设备
公开(公告)号：US5207265A
公开(公告)日：1993-05-04
申请号：US474755
申请日：1990-03-26
申请人： Morihiro Hasegawa , Takashi Yamauchi
发明人： Morihiro Hasegawa , Takashi Yamauchi
IPC分类号： B22D11/06
CPC分类号： B22D11/0651 , B22D11/066
摘要： A twin roll continuous casting apparatus for continuously casting a metal strip through a gap of a pair of internally cooled rolls rotating in the opposite direction to each other having a pair of side dams disposed on both sides of the rolls wherein each side dam is made of an abradable refractory and forcibly fed in the casting direction, and wherein portions of the circumferential surfaces of the rolls contacting the side dams are formed into rough surfaces having an abrading ability and each of said portions having rough surfaces comprises a member removably fixed to the entity of the roll.

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