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71. 发明授权

US4698238A Pattern-forming method 失效
标题翻译：图案形成方法
公开(公告)号：US4698238A
公开(公告)日：1987-10-06
申请号：US826379
申请日：1986-02-05
申请人： Nobuo Hayasaka , Haruo Okano , Yasuhiro Horiike
发明人： Nobuo Hayasaka , Haruo Okano , Yasuhiro Horiike
IPC分类号： H01L21/302 , C23F1/02 , G03F7/004 , H01L21/268 , H01L21/3065 , H01L21/311 , H01L21/312 , H01L21/3213 , B05D3/06
CPC分类号： G03F7/0041 , C23F1/02 , H01L21/268 , H01L21/3065 , H01L21/31116 , H01L21/31144 , H01L21/312 , H01L21/32135 , H01L21/32137
摘要： A pattern is formed by providing a reaction field in which a photo-induced reaction proceeds when a substrate is irradiated with light so as to form a pattern on the substrate, and setting, in the reaction field, conditions for establishing a nonlinear relationship between the intensity of the light and the rate of the photo-induced reaction. The substrate is selectively irradiated with light in the reaction field under the conditions set therein so as to selectively form a pattern in the irradiated portion of the substrate in accordance with the selective irradiation.
摘要翻译：通过提供在基板被光照射时进行光诱导反应以在基板上形成图案的反应场形成图案，并且在反应场中设定用于建立非线性关系的条件光的强度和光诱导反应的速率。在反应场中，在设定的条件下，用光选择性地照射基板，从而根据选择性照射选择性地在基板的照射部分中形成图案。

72. 发明授权

US4600492A Magnet driving method and device for same 失效
标题翻译：磁铁驱动方法及装置相同
公开(公告)号：US4600492A
公开(公告)日：1986-07-15
申请号：US758505
申请日：1985-07-24
申请人： Hirosuke Ooshio , Tetsuo Aikawa , Hidetaka Jo , Haruo Okano , Takashi Yamazaki
发明人： Hirosuke Ooshio , Tetsuo Aikawa , Hidetaka Jo , Haruo Okano , Takashi Yamazaki
IPC分类号： C23C14/36 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3455 , H01J37/3408
摘要： A plurality of bar-like magnets are arranged in a vacuum chamber at an equal space interval to form a plurality of strong magnetic fields in a stripe-pattern form and the magnets are moved reciprocally in the direction of arrangement of the magnetic fields while changing gradually the stop points of the magnets over a work to be processed by etching or sputtering in a step-like manner so that the integral effect of each magnetic field acting on the work is uniform over the entire region of the work.
摘要翻译：多个棒状磁体以等间距布置在真空室中，以形成条纹图案形式的多个强磁场，并且磁体在磁场的排列方向上往复移动，同时逐渐变化通过蚀刻或溅射以阶梯状方式处理的工件上的磁体的停止点，使得作用在工件上的每个磁场的整体效应在工件的整个区域上是均匀的。

73. 发明授权

US4178396A Method of forming an insulating film 失效
标题翻译：形成绝缘膜的方法
公开(公告)号：US4178396A
公开(公告)日：1979-12-11
申请号：US933844
申请日：1978-08-15
申请人： Haruo Okano , Nozomu Harada , Nobuhisa Kubota
发明人： Haruo Okano , Nozomu Harada , Nobuhisa Kubota
IPC分类号： H01L21/28 , H01L21/283 , H01L21/31 , H01L21/321 , H01L21/339 , H01L21/8247 , H01L29/762 , H01L29/788 , H01L29/792 , H01L21/312 , C03C15/00 , C03C25/06
CPC分类号： H01L29/66954 , H01L21/32105
摘要： A method of forming an insulating film of high breakdown voltage on a polycrystalline substance layer which comprises the steps of preparing the polycrystalline substance layer; selectively removing the polycrystalline substance layer; heat-treating for the first time that portion of the polycrystalline substance layer which is left after said selective removal in an oxidizing atmosphere to provide an oxide layer; removing the whole of said oxide layer; and heat-treating for the second time in an oxidizing atmosphere the polycrystalline substance layer which is now exposed due to removal of said oxide layer, thereby forming a second oxide layer acting as an insulating film on said exposed surface.
摘要翻译：一种在多晶物质层上形成高击穿电压的绝缘膜的方法，包括制备多晶物质层的步骤; 选择性地除去多晶物质层; 首先在氧化气氛中选择性除去之后留下多晶物质层的部分进行热处理以提供氧化物层; 除去整个所述氧化物层; 并且在氧化气氛中第二次热处理由于去除所述氧化物层而现在暴露的多晶物质层，从而在所述暴露表面上形成用作绝缘膜的第二氧化物层。

74. 发明授权

US6132551A Inductive RF plasma reactor with overhead coil and conductive laminated RF window beneath the overhead coil 失效
标题翻译：具有架空线圈的感应RF等离子体反应器和架空线圈下面的导电层压射频窗口
公开(公告)号：US6132551A
公开(公告)日：2000-10-17
申请号：US937348
申请日：1997-09-20
申请人： Keiji Horioka , Haruo Okano
发明人： Keiji Horioka , Haruo Okano
IPC分类号： H01J37/32 , C23C16/48 , C23F1/02 , C23F1/08
CPC分类号： H01J37/321
摘要： The invention is embodied in an inductively coupled plasma reactor having a conductive enclosure defining a reactor chamber interior, the enclosure including a conductive layer, and an inductive antenna external of the reactor chamber interior and facing the interior through the conductive layer and being connectable to an RF power source, the conductive layer being sufficiently thin to permit an inductive field of the inductive antenna to coupled through the conductive layer into the reactor chamber interior. A wafer pedestal for supporting a semiconductive workpiece within the reactor chamber interior is connected to an RF bias power supply whereby a workpiece on the wafer support is a bias power electrode and the conductive layer is a bias power counter electrode, so that the entire reactor enclosure is a bias power counter electrode. Preferably, the bias power electrode is biased with respect to RF ground, and the conductive reactor enclosure including the conductive layer is grounded.
摘要翻译：本发明体现在电感耦合等离子体反应器中，其具有限定反应室内部的导电外壳，外壳包括导电层，以及反应室内部外部的电感天线，并通过导电层面向内部，并且可连接到 RF电源，导电层足够薄以允许感应天线的感应场通过导电层耦合到反应室内部。用于在反应器室内部支撑半导体工件的晶片基座连接到RF偏置电源，由此晶片支撑件上的工件是偏置功率电极，并且导电层是偏置功率对电极，使得整个反应器外壳是偏置电源对电极。优选地，偏置功率电极相对于RF地被偏置，并且包括导电层的导电电抗器外壳接地。

75. 发明授权

US5733713A Method of manufacturing semiconductor device 失效
公开(公告)号：US5733713A
公开(公告)日：1998-03-31
申请号：US428522
申请日：1995-04-21
申请人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
发明人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
IPC分类号： G03F7/00 , H01L21/027 , H01L21/768
CPC分类号： G03F7/0005 , H01L21/0276 , H01L21/76885 , Y10S430/151 , Y10S438/95
摘要： A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.

76. 发明授权

US5731634A Semiconductor device having a metal film formed in a groove in an insulating film 失效
标题翻译：具有形成在绝缘膜中的槽中的金属膜的半导体器件
公开(公告)号：US5731634A
公开(公告)日：1998-03-24
申请号：US659389
申请日：1996-06-06
申请人： Mie Matsuo , Haruo Okano , Nobuo Hayasaka , Kyoichi Suguro , Hideshi Miyajima , Jun-ichi Wada
发明人： Mie Matsuo , Haruo Okano , Nobuo Hayasaka , Kyoichi Suguro , Hideshi Miyajima , Jun-ichi Wada
IPC分类号： H01L21/768 , H01L23/528 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76877 , H01L21/28518 , H01L21/76823 , H01L21/76838 , H01L21/76849 , H01L23/5283 , H01L23/53238 , H01L2924/0002
摘要： The present invention provides a method of manufacturing a semiconductor device, including the steps of forming a metal oxide film made of a metal oxide having a decrease in standard free energy smaller than a decrease in standard free energy of hydrogen oxide or of carbon oxide, on an insulating film formed on a semiconductor substrate, forming a metal oxide film pattern by subjecting a treatment to the metal oxide film, and converting said metal oxide pattern into at least one of an electrode and a wiring made of a metal which is a main component constituting the metal oxide, by reducing the metal oxide film pattern at a temperature of 80.degree. to 500.degree. C.
摘要翻译：本发明提供了一种制造半导体器件的方法，包括以下步骤：形成由金属氧化物制成的金属氧化物膜，其标准自由能的降低小于氧化物或氧化碳的标准自由能的降低，对形成在半导体基板上的绝缘膜，通过对金属氧化物膜进行处理形成金属氧化物膜图案，并将所述金属氧化物图案转换成电极和由作为主要成分的金属制成的布线中的至少一个通过在80℃〜500℃的温度下还原金属氧化物膜图案来构成金属氧化物。

77. 发明授权

US5707487A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5707487A
公开(公告)日：1998-01-13
申请号：US332504
申请日：1994-10-31
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Haruo Okano
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Haruo Okano
IPC分类号： C23F4/00 , G03F7/09 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213
CPC分类号： G03F7/094 , H01L21/3081 , H01L21/31144 , H01L21/3146 , H01L21/32139 , Y10S438/95
摘要： According to this invention, a method of manufacturing a semiconductor device includes the steps of forming a carbon film on a surface of a substrate, forming a mask pattern on the carbon film, etching the carbon film along the mask pattern to form a carbon film pattern, and reactive ion etching the substrate along the carbon film pattern using a high density plasma produced by application of a high frequency and a magnetic field, application of a microwave, irradiation of an electron beam, application of a high frequency of not less than 27 MHz, or application of a inductive coupled high frequency.
摘要翻译：根据本发明，制造半导体器件的方法包括以下步骤：在基片的表面上形成碳膜，在碳膜上形成掩模图案，沿着掩模图案蚀刻碳膜以形成碳膜图案并且使用通过施加高频和磁场产生的高密度等离子体沿着碳膜图案反应离子蚀刻基板，施加微波，照射电子束，施加不小于27的高频 MHz或应用电感耦合高频。

78. 发明授权

US5654237A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5654237A
公开(公告)日：1997-08-05
申请号：US476883
申请日：1995-06-07
申请人： Kyoichi Suguro , Haruo Okano
发明人： Kyoichi Suguro , Haruo Okano
IPC分类号： H01L21/28 , H01L21/285 , H01L21/316 , H01L21/3205 , H01L21/336 , H01L21/762 , H01L21/768 , H01L21/8234 , H01L27/088 , H01L29/78 , H01L21/44 , H01L21/283
CPC分类号： H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02208 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02271 , H01L21/02282 , H01L21/0234 , H01L21/31608 , H01L21/76879 , Y10S148/117
摘要： A method of manufacturing a semiconductor device includes the steps of forming a first insulating layer having a hole on a substrate, selectively forming a conductive layer in the hole, selectively forming a second insulating layer on the first insulating layer, patterning the second insulating layer, and forming an interconnection layer in an opening portion of the second insulating layer formed by patterning so as to be electrically connected to the conductive layer.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在衬底上形成具有孔的第一绝缘层，在孔中选择性地形成导电层，在第一绝缘层上选择性地形成第二绝缘层，图案化第二绝缘层，以及在通过图案化形成的第二绝缘层的开口部分中形成互连层，从而与导电层电连接。

79. 发明授权

US5591486A Method for forming a film on a substrate by activating a reactive gas 失效
标题翻译：通过活化气体在基板上形成膜的方法
公开(公告)号：US5591486A
公开(公告)日：1997-01-07
申请号：US474312
申请日：1995-06-07
申请人： Haruo Okano , Sadahisa Noguchi , Makoto Sekine
发明人： Haruo Okano , Sadahisa Noguchi , Makoto Sekine
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/46 , H01L21/205 , H01L21/316 , H01L21/318 , H01L21/768 , C23C16/00 , B05D3/06
CPC分类号： H01L21/02274 , C23C16/045 , C23C16/402 , C23C16/44 , C23C16/46 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02277 , H01L21/02337 , H01L21/31604 , H01L21/31612 , H01L21/31625 , H01L21/3185 , H01L21/76879 , Y10S148/05
摘要： A thin film forming method which comprises the steps of supporting a substrate to be treated, having a trench or an unevenness thereon, in a reaction vessel; introducing a reactive gas into the reaction vessel; activating the reactive gas to form a deposit species, the deposit species characterized by a phase diagram including a liquid phase region defined by a melting curve and an evaporation curve that intersect at a triple point; and forming a thin film containing at least a part of the deposit species on the substrate while retaining a pressure of the deposit species in the reaction vessel higher than the triple point of the phase diagram of the deposit species, and retaining a temperature of the substrate within the liquid phase region of the phase diagram of the deposit species.
摘要翻译：一种薄膜形成方法，包括以下步骤：在反应容器中支撑待处理的衬底，其上具有沟槽或不均匀性; 将反应性气体引入反应容器中; 激活反应气体以形成沉积物，所述沉积物质的特征在于包括由三维点相交的熔解曲线和蒸发曲线限定的液相区域的相图; 以及在所述基板上形成含有所述沉积物种的至少一部分的薄膜，同时保持所述沉积物质在所述反应容器中的压力高于所述沉积物种类相图的三重点，并且保持所述基板的温度在沉积物相的相图区域内。

80. 发明授权

US5437961A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5437961A
公开(公告)日：1995-08-01
申请号：US263415
申请日：1994-06-21
申请人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
发明人： Hiroyuki Yano , Haruo Okano , Tohru Watanabe , Keiji Horioka
IPC分类号： G03F7/00 , H01L21/027 , H01L21/768
CPC分类号： G03F7/0005 , H01L21/0276 , H01L21/76885 , Y10S430/151 , Y10S438/95
摘要： A method of manufacturing a semiconductor device is disclosed. The method comprises the steps of forming carbon layer on a light-reflective layer or a transparent layer formed on a light-reflective layer, forming a photosensitive resin layer on the carbon layer, selectively radiating light on the photosensitive resin layer, forming a photosensitive resin pattern by developing the photosensitive resin layer selectively irradiated with the light, forming a carbon pattern by etching the carbon layer using the photosensitive pattern as a mask, and forming a light-reflective pattern or a transparent layer pattern by etching the light-reflective layer using the photosensitive resin layer or the carbon pattern as a mask. When the light-reflective layer pattern is formed, the thickness of the carbon layer is set to be less than 100 nm. When the transparent layer pattern is formed, the thickness of the carbon layer is set to be 80 nm or more.
摘要翻译：公开了制造半导体器件的方法。该方法包括以下步骤：在形成在光反射层上的光反射层或透明层上形成碳层，在碳层上形成感光性树脂层，在感光性树脂层上选择性地照射光，形成感光性树脂通过显影选择性地照射光的感光性树脂层，通过使用感光图案作为掩模蚀刻碳层形成碳图案，并且通过使用以下方式蚀刻光反射层来形成光反射图案或透明层图案：感光性树脂层或碳图案作为掩模。当形成光反射层图案时，碳层的厚度设定为小于100nm。当形成透明层图案时，碳层的厚度设定为80nm以上。

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