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    • 74. 发明授权
    • Transistors including laterally extended active regions and methods of fabricating the same
    • 包括横向延伸的有源区的晶体管及其制造方法
    • US07470588B2
    • 2008-12-30
    • US11387029
    • 2006-03-22
    • Min-Hee ChoJi-Young Kim
    • Min-Hee ChoJi-Young Kim
    • H01L21/336
    • H01L29/66621H01L21/823481H01L27/10876H01L29/78
    • A transistor includes a substrate and an isolation region disposed in the substrate. The isolation regions defines an active region comprising upper and lower active regions, the upper active region having a first width and the lower active region having a second width greater than the first width. An insulated gate electrode extends through the upper active region and into the lower active region. Source and drain regions are disposed in the active region on respective first and second sides of the insulated gate electrode. The insulated gate electrode may include an upper gate electrode disposed in the upper active region and a lower gate electrode disposed in the lower active region, wherein the lower gate electrode is wider than the upper gate electrode. Related fabrication methods are described.
    • 晶体管包括衬底和设置在衬底中的隔离区。 隔离区域限定包括上部和下部有源区域的有源区域,上部有源区域具有第一宽度,而下部有源区域具有大于第一宽度的第二宽度。 绝缘栅电极延伸穿过上有源区并进入下有源区。 源极和漏极区域设置在绝缘栅电极的相应第一和第二侧上的有源区中。 绝缘栅电极可以包括设置在上有源区中的上栅电极和设置在下有源区中的下栅电极,其中下栅电极比上栅极电极宽。 描述相关的制造方法。