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    • 71. 发明授权
    • Silicon solar cell
    • 硅太阳能电池
    • US5431741A
    • 1995-07-11
    • US166384
    • 1993-12-13
    • Susumu SakaguchiToru YamadaTadashi KamiokaTeruhiko Hirasawa
    • Susumu SakaguchiToru YamadaTadashi KamiokaTeruhiko Hirasawa
    • H01L31/0224H01L31/0352H01L31/042H01L31/05
    • H01L31/035281H01L31/022433Y02E10/50
    • A novel structure of a silicon solar cell is disclosed, which can be prepared at an outstandingly low cost but can still exhibit good efficiency for the conversion of solar energy to electricity. The silicon solar cell comprises, as an integral body:(a) an electrically insulating substrate plate of, e.g., glass or a ceramic;(b1) a first group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as an electrode; (b2) a second group of metal contact lines formed in parallel with each other on the substrate surface to jointly serve as a counterelectrode, each of the metal contact lines of the second group being disposed between two metal contact lines of the first group, maintaining electric insulation therebetween; and(c) a plural number of wires of silicon semiconductor, each of which perpendicularly crosses each of the metal contact lines of the first and second groups in direct contact therewith. When the silicon semiconductor is of the n-type, for example, and has discrete p-type regions which are in contact with the metal contact lines of one of the groups, photovoltaic power is generated between the electrodes under irradiation with sunlight. An alternative arrangement of the silicon semiconductor wires is also proposed in which each of the silicon wires bridges a metal contact line of the first group and a metal contact line of the second group in lengthwise contact therewith.
    • 公开了一种硅太阳能电池的新型结构,其可以以非常低的成本制备,但仍然可以显示出将太阳能转换成电的良好效率。 硅太阳能电池包括作为一体的主体:(a)例如玻璃或陶瓷的电绝缘基板; (b1)在基板表面上彼此平行地形成的第一组金属接触线,以共同地用作电极; (b2)在基板表面上彼此平行地形成的第二组金属接触线,以共同用作反电极,第二组的每个金属接触线设置在第一组的两个金属接触线之间,保持 电绝缘; 和(c)多个数量的硅半导体的导线,其中的每一个与第一和第二组的金属接触线的每一个垂直地交叉直接接触。 例如,当硅半导体为n型时,具有与这些组中的一个的金属接触线接触的离散p型区域,在阳光照射下在电极之间产生光伏电力。 还提出了硅半导体布线的替代布置,其中每个硅线桥接第一组的金属接触线和第二组的金属接触线与其纵向接触。
    • 73. 发明授权
    • Vapor phase growth apparatus and method of fabricating epitaxial wafer
    • 气相生长装置和制造外延晶片的方法
    • US08926753B2
    • 2015-01-06
    • US10582802
    • 2004-11-18
    • Toru Yamada
    • Toru Yamada
    • H01L21/20C23C16/455C30B25/14
    • C23C16/455C30B25/14Y10T117/10
    • Material gas hits the outer peripheral surface of a dam member and rides on the upper surface side, and then is allowed to flow along the main surface of a silicon single-crystal substrate placed on a susceptor. An upper lining member is disposed above the dam member so as to face the dam member. A gas introducing clearance is formed between the dam member and the upper lining member. In a vapor growth device, the upper lining member is regulated in size so that the length, formed in a direction along the horizontal reference line, of the gas introducing clearance gradually decreases as it is away from the horizontal reference line or is kept constant at any position. A vapor growth device capable of making more uniform the flowing route of a material gas flowing on the silicon single-crystal substrate, and a production method for an epitaxial wafer are provided.
    • 材料气体撞击坝体的外周表面,并在上表面侧上游,然后沿着放置在基座上的硅单晶衬底的主表面流动。 上坝部件设置在坝体上方以面对坝体部件。 在阻挡构件和上衬件之间形成气体导入间隙。 在气相生长装置中,上衬件的尺寸被调节,使得沿着水平参考线的方向形成的气体导入间隙的长度随着离开水平参考线而逐渐减小,或者保持恒定在 任何职位 提供能够使流过硅单晶衬底的材料气体的流动路线更均匀的气相生长装置和外延晶片的制造方法。
    • 75. 发明授权
    • Image quality evaluation method, image quality evaluation system and image quality evaluation program
    • 图像质量评估方法,图像质量评价体系和图像质量评价方案
    • US08249358B2
    • 2012-08-21
    • US12446368
    • 2007-10-18
    • Toru Yamada
    • Toru Yamada
    • G06K9/46G01N37/00
    • H04N17/004
    • Provided is an image quality evaluation method for evaluating image qualities of a second image by using a difference from a first image. In the image quality evaluation method, a representative pixel component value indicating a pixel component value that represents pixels in the image frame of one of the images, and pixel position information indicating a pixel position where the representative pixel component value appears are extracted as a feature quantity. By using the representative pixel component value and the pixel position information, which are the image feature quantity, and based on a difference between a pixel component value at the pixel position indicated by the pixel position information in the image frame of the other image and the representative pixel component value, a difference of the entire second image from the first image is estimated.
    • 提供了一种用于通过使用与第一图像的差异来评估第二图像的图像质量的图像质量评估方法。 在图像质量评价方法中,提取表示表示图像之一的图像帧中的像素的像素分量值的代表像素分量值和表示代表像素分量值出现的像素位置的像素位置信息作为特征 数量。 通过使用作为图像特征量的代表像素分量值和像素位置信息,并且基于由另一图像的图像帧中的像素位置信息指示的像素位置处的像素分量值与 代表像素分量值,估计整个第二图像与第一图像的差异。
    • 80. 发明申请
    • CHASSIS SURFACE TEMPERATURE ESTIMATE APPARATUS, METHOD, PROGRAM, AND STORAGE MEDIUM
    • 底盘表面温度估计装置,方法,程序和存储介质
    • US20090012750A1
    • 2009-01-08
    • US12161946
    • 2007-01-09
    • Yutaka KumanoTetsuyoshi OguraToru Yamada
    • Yutaka KumanoTetsuyoshi OguraToru Yamada
    • G06F17/50G06F17/10
    • G06F17/5009G06F2217/80
    • A chassis surface temperature estimate apparatus capable of quickly and easily estimating a chassis surface temperature without obtaining a parameter for each component through actual measurement for thermal design is provided. A thermal analysis execution section (6) executes a thermal analysis in units of heat-generation groups each including at least one heat-generating component, and obtains the chassis surface temperatures caused by respective heat-generation groups. A storage section (8) stores the chassis surface temperatures obtained for respective heat-generation group. A synthesis section (7) firstly reads the chassis surface temperature data from the storage section (8), and converts the chassis surface temperatures caused by respective heat-generation groups to radiation amounts. Secondly, the synthesis section (7) calculates a sum of radiation amounts by adding the radiation amounts obtained through the conversion. The synthesis section (7) calculates the chassis surface temperature in which the chassis surface temperatures of respective heat-generation groups are combined with each other by converting the obtained sum of the radiation amounts to a temperature.
    • 提供了一种能够通过对热设计的实际测量而获得每个部件的参数而能够快速而容易地估计底盘表面温度的底盘表面温度估计装置。 热分析执行部(6)以包含至少一个发热部的发热体为单位进行热分析,得到各发热体所引起的底盘面温度。 存储部(8)存储对于各个发热组获得的底盘表面温度。 合成部(7)首先从存储部(8)读取底盘表面温度数据,并将由各个发热组引起的底盘表面温度转换为辐射量。 其次,合成部(7)通过将通过转换获得的辐射量相加来计算辐射量之和。 合成部(7)通过将所获得的辐射量之和转换为温度来计算将各个发热体的底盘表面温度相互组合的底盘表面温度。