专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US09016869B2 Optical device including frame holding light modulation unit having dustproof glass and projector 有权
标题翻译：光学装置包括具有防尘玻璃和投影仪的框架保持光调制单元
公开(公告)号：US09016869B2
公开(公告)日：2015-04-28
申请号：US12822216
申请日：2010-06-24
申请人： Akira Egawa , Kaname Nagatani , Kunihiko Takagi , Tetsuo Shimizu
发明人： Akira Egawa , Kaname Nagatani , Kunihiko Takagi , Tetsuo Shimizu
IPC分类号： G03B21/16 , G02F1/1333
CPC分类号： G03B21/16 , G02F1/133308 , G02F2001/133311 , G02F2001/133331
摘要： An optical device includes: a light modulation unit configured to modulate a light according to image information, including an element substrate having a pixel electrode and a switching element connected with the pixel electrode, and an opposed substrate disposed opposed to the element substrate; a frame configured to hold the light modulation unit; and an incident side dustproof glass disposed in close contact with a light incident side end surface of the opposed substrate, the incident side dustproof glass having the plane size larger than the plane size of the opposed substrate is disposed on the light incident side of the frame.
摘要翻译：光学装置包括：光调制单元，被配置为根据图像信息调制光，包括具有像素电极的元件基板和与像素电极连接的开关元件，以及与元件基板相对设置的相对基板。被配置为保持所述光调制单元的帧; 和与相对基板的光入射侧端面紧密接触的入射侧防尘玻璃，具有比对置基板的平面尺寸大的面尺寸的入射侧防尘玻璃配置在框架的光入射侧。

72. 发明授权

US08696832B2 High-strength hot-rolled steel sheet and method for manufacturing same 有权
标题翻译：高强度热轧钢板及其制造方法
公开(公告)号：US08696832B2
公开(公告)日：2014-04-15
申请号：US12866513
申请日：2009-02-04
申请人： Shinjiro Kaneko , Kaneharu Okuda , Tetsuo Shimizu , Noriaki Moriyasu , Masahide Watabe
发明人： Shinjiro Kaneko , Kaneharu Okuda , Tetsuo Shimizu , Noriaki Moriyasu , Masahide Watabe
IPC分类号： C22C38/14 , C22C38/04 , C21D8/02
CPC分类号： C22C38/04 , C21D1/20 , C21D8/0226 , C21D8/0263 , C21D9/46 , C21D2211/002 , C21D2211/004 , C21D2211/005 , C22C38/02 , C22C38/06 , C22C38/14
摘要： A high-strength hot-rolled steel sheet has a tensile strength (TS) of 540 to 780 MPa, only small variations in strength, and excellent uniformity in strength using a general-purpose Ti-containing steel sheet, which is inexpensive. The high-strength hot-rolled steel sheet includes, on a mass percent basis, 0.05%-0.12% C, 0.5% or less Si, 0.8%-1.8% Mn, 0.030% or less P, 0.01% or less S, 0.005%-0.1% Al, 0.01% or less N, 0.030%-0.080% Ti, and the balance being Fe and incidental impurities. The microstructure have a bainitic ferrite fraction of 70% or more, and the amount of Ti present in a precipitate having a size of less than 20 nm is 50% or more of the value of Ti* calculated using formula (1): Ti*=[Ti]−48/14×[N] (1) where [Ti] and [N] represent a Ti content (percent by mass) and a N content (percent by mass), respectively, of the steel sheet.
摘要翻译：高强度热轧钢板的拉伸强度（TS）为540〜780MPa，强度变化小，使用廉价的通用含Ti钢板的强度均匀性优异。高强度热轧钢板以质量％计含有0.05％-0.12％C，0.5％以下Si，0.8％-1.8％Mn，0.030％以下P，0.01％以下S，0.005 ％-0.1％Al，0.01％以下N，0.030％-0.080％Ti，余量为Fe和附带杂质。显微组织具有70％以上的贝氏体铁素体分数，并且存在于尺寸小于20nm的析出物中的Ti的量为使用式（1）计算的Ti *值的50％以上：Ti * = [Ti] -48 / 14×[N]（1）其中[Ti]和[N]分别表示钢板的Ti含量（质量％）和N含量（质量％）。

73. 发明申请

US20130155757A1 Drive Method for Memory Element, and Storage Device Using Memory Element 有权
标题翻译：内存元素的驱动方法和使用内存元素的存储设备
公开(公告)号：US20130155757A1
公开(公告)日：2013-06-20
申请号：US13819217
申请日：2011-08-25
申请人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
发明人： Tsuyoshi Takahashi , Yuichiro Masuda , Shigeo Furuta , Touru Sumiya , Masatoshi Ono , Yutaka Hayashi , Toshimi Fukuoka , Tetsuo Shimizu , Kumaragurubaran Somu , Hiroshi Suga , Yasuhisa Naitou
IPC分类号： G11C13/00
CPC分类号： G11C13/0002 , G11C13/003 , G11C13/0069 , G11C17/16 , G11C2013/009 , G11C2213/33 , G11C2213/52 , G11C2213/74 , G11C2213/79
摘要： A memory element includes an insulating substrate; a first electrode and a second electrode on the insulating substrate; and an inter-electrode gap portion that causes a change in resistance value between the first and second electrodes. Applied to the memory element from a pulse generating source is a first voltage pulse for shifting from a predetermined low-resistance state to a predetermined high-resistance state, and a second voltage pulse for shifting from the high-resistance state to the low-resistance state through a series-connected resistor, by which current flowing to the memory element after the change to a low resistance value is reduced. When shifting from the high to the low-resistance state, a voltage pulse is applied such that an electrical resistance between the pulse generating source and the memory element becomes higher than the electrical resistance shifting from the low to the high-resistance state.
摘要翻译：存储元件包括绝缘基板; 绝缘基板上的第一电极和第二电极; 以及引起第一和第二电极之间的电阻值变化的电极间间隙部分。从脉冲发生源施加到存储元件的是用于从预定的低电阻状态转换到预定的高电阻状态的第一电压脉冲和用于从高电阻状态转移到低电阻的第二电压脉冲通过串联电阻器的状态，通过该电阻减少在改变为低电阻值之后流向存储元件的电流。当从高电平状态转移到低电阻状态时，施加电压脉冲，使得脉冲发生源和存储元件之间的电阻变得高于从低电阻状态向高电阻状态的电阻移动。

74. 发明授权

US08395185B2 Switching element 有权
标题翻译：开关元件
公开(公告)号：US08395185B2
公开(公告)日：2013-03-12
申请号：US12140411
申请日：2008-06-17
申请人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
发明人： Shigeo Furuta , Yuichiro Masuda , Tsuyoshi Takahashi , Masatoshi Ono , Yasuhisa Naitoh , Masayo Horikawa , Tetsuo Shimizu
IPC分类号： H01L29/66
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/124
摘要： A switching element comprising: an insulative substrate; a first electrode and a second electrode provided on one surface of the insulative substrate; and an interelectrode gap which is provided between the first electrode and the second electrode, and which has a gap on the order of nanometers in which switching phenomenon of resistance occurs by applying predetermined voltage between the first electrode and the second electrode, wherein the one surface of the insulative substrate contains nitrogen.
摘要翻译：一种开关元件，包括：绝缘基板; 设置在所述绝缘基板的一个表面上的第一电极和第二电极; 以及电极间间隙，其设置在第一电极和第二电极之间，并且通过在第一电极和第二电极之间施加预定电压而具有在电阻发生开关现象的纳米级的间隔，其中，一个表面的绝缘底物含有氮。

75. 发明申请

US20120104654A1 MOLDING METHOD AND MOLDING DEVICE FOR FORMING IMPELLER 有权
标题翻译：用于形成叶轮的成型方法和成型装置
公开(公告)号：US20120104654A1
公开(公告)日：2012-05-03
申请号：US13284225
申请日：2011-10-28
申请人： Masami NATSUME , Tetsuo Shimizu , Tomoo Sagawa
发明人： Masami NATSUME , Tetsuo Shimizu , Tomoo Sagawa
IPC分类号： B29C45/40
CPC分类号： B29C45/4471 , B29L2031/08
摘要： A molding method for forming an impeller, includes a mold clamping process having a first mold for forming one side of blades, a second mold firmly clamped with the first mold, and a core arranged at the first mold relative to the blades, the mold clamping process clamping the first mold to the second mold in a state where the core is arranged between the first mold and the second mold, an injecting process injecting resin in a cavity obtained by the mold clamping process, and a mold removing process including the steps of releasing at least the first mold from the clamped state obtained by the mold clamping process to generate an opened portion in the first mold after the resin is hardened, rotating the core about a rotational axis toward the opened portion of the first mold, and separating the core from the resin-molded impeller.
摘要翻译：一种用于形成叶轮的成型方法，包括：模具夹紧工艺，其具有用于形成叶片的一侧的第一模具，与第一模具牢固夹紧的第二模具和相对于叶片在第一模具处布置的芯部，模具夹紧在芯部布置在第一模具和第二模具之间的状态下，将第一模具夹紧到第二模具中，在通过模具夹紧工艺获得的模腔中注入树脂注入工艺，以及脱模工艺，包括以下步骤：至少将第一模具从通过合模过程获得的夹紧状态释放，以在树脂硬化之后在第一模具中产生开口部分，使芯围绕旋转轴线朝向第一模具的开口部分旋转，芯从树脂模制叶轮。

76. 发明授权

US08128239B2 Light source device and projector 失效
标题翻译：光源设备和投影机
公开(公告)号：US08128239B2
公开(公告)日：2012-03-06
申请号：US12757188
申请日：2010-04-09
申请人： Tetsuo Shimizu , Kaname Nagatani , Kunihiko Takagi , Akira Egawa , Yuji Takado , Satoshi Kinoshita
发明人： Tetsuo Shimizu , Kaname Nagatani , Kunihiko Takagi , Akira Egawa , Yuji Takado , Satoshi Kinoshita
IPC分类号： G03B21/28
CPC分类号： F21V7/0025 , F21V7/04 , G03B21/28
摘要： A light source device includes a light emitting tube having a light emitting section that emits light, a first sealing section on one side of the light emitting section formed integrally with the light emitting section, and a second sealing section on the other side of the light emitting section formed integrally with the light emitting section. A secondary reflecting mirror having a secondary reflecting surface covers part of a periphery of the light emitting section and reflects light emitted from the light emitting section. A primary reflecting mirror having a primary reflecting surface reflects the light emitted from the light emitting section and the light reflected by the secondary reflecting mirror. The secondary reflecting mirror has a first reference plane defined by a first boundary line as a boundary between the light emitting section and the first sealing section, which does not intersect with the secondary reflecting surface.
摘要翻译：光源装置包括具有发光部的发光部的发光管，与发光部一体形成的发光部的一侧的第一密封部和光的另一侧的第二密封部发光部与发光部一体地形成。具有副反射面的副反射镜覆盖发光部的周边的一部分，并且反射从发光部发射的光。具有主反射面的主反射镜反射从发光部发射的光和由二次反射镜反射的光。二次反射镜具有由与第二反射面不相交的第一边界线作为发光部与第一密封部之间的边界的第一基准面。

77. 发明申请

US20100193757A1 TWO-TERMINAL RESISTANCE SWITCHING DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：两端电阻开关器件和半导体器件
公开(公告)号：US20100193757A1
公开(公告)日：2010-08-05
申请号：US12671145
申请日：2008-07-23
申请人： Hiroshi Suga , Yasuhisa Naitou , Masayo Horikawa , Tetsuo Shimizu
发明人： Hiroshi Suga , Yasuhisa Naitou , Masayo Horikawa , Tetsuo Shimizu
IPC分类号： H01L45/00
CPC分类号： H01L29/125 , B82Y10/00 , B82Y30/00 , H01L45/04 , H01L45/1226 , H01L45/1253 , H01L51/0048 , H01L51/0591
摘要： The present invention is contemplated for providing a resistance switching device having a very small device size of approximately 20 nm×20 nm in its entirety, by taking advantage of a small diameter of a multilayered carbon nanotube or a multilayered carbon nanofiber per se, via a simpler manner that does not require any molecule inclusion step, with an excellent electric conductivity.Provided is a two-terminal resistance switching device, which has multilayered carbon nanofibers or multilayered carbon nanotubes disposed with a nano-scale gap width therebetween.
摘要翻译：本发明考虑用于通过利用多层碳纳米管或多层碳纳米纤维本身的小直径，通过经由一个或多个多层碳纳米纤维本身的优点，提供具有大约20nm×20nm的非常小的器件尺寸的电阻开关器件更简单的方式，其不需要任何分子包合步骤，具有优异的导电性。提供一种双端子电阻切换装置，其具有多层碳纳米纤维或多层碳纳米管，纳米尺度间隙宽度设置在其间。

78. 发明授权

US07754796B2 Method for producing fluorine-containing polymer, aqueous dispersion of fluorine-containing polymer, 2-acyloxycarboxylic acid derivative, and surface active agent. 有权
标题翻译：含氟聚合物的制造方法，含氟聚合物的水分散体，2-酰氧基羧酸衍生物和表面活性剂。
公开(公告)号：US07754796B2
公开(公告)日：2010-07-13
申请号：US12494208
申请日：2009-06-29
申请人： Nobuhiko Tsuda , Yoshihiro Yamamoto , Yoshinori Nanba , Yasuhiko Sawada , Tetsuo Shimizu
发明人： Nobuhiko Tsuda , Yoshihiro Yamamoto , Yoshinori Nanba , Yasuhiko Sawada , Tetsuo Shimizu
IPC分类号： C08K5/09 , C08K5/10 , C08F2/26 , C08F14/18 , C08G73/24
CPC分类号： C08F20/22 , C07C69/63 , C08F14/18 , C08K5/10 , C08F2/10
摘要： The present invention provides a method of producing a fluoropolymer, wherein polymerization using a carboxylate ester bond-containing carboxylic acid derivative as a surfactant in an aqueous medium to give the fluoropolymer is conducted, the above carboxylate ester bond-containing carboxylic acid derivative has a carboxylate ester bond and —COOM (M representing H, NH4, Li, Na or K), the above carboxylate ester bond may optionally be substituted by fluorine atom.
摘要翻译：本发明提供一种含氟聚合物的制造方法，其中在水性介质中使用含羧酸酯键的羧酸衍生物作为表面活性剂进行聚合，得到含氟聚合物，上述含羧酸酯键的羧酸衍生物具有羧酸盐酯键和-COOM（M代表H，NH4，Li，Na或K），上述羧酸酯键可以任选被氟原子取代。

79. 发明申请

US20100144993A1 CURABLE FLUORINE-CONTAINING POLYMER, CURABLE RESIN COMPOSITION PREPARED FROM SAME AND ANTIREFLECTION FILM 审中-公开
标题翻译：可固化的含氟聚合物，由其制备的可固化树脂组合物和抗反射膜
公开(公告)号：US20100144993A1
公开(公告)日：2010-06-10
申请号：US12684622
申请日：2010-01-08
申请人： Takayuki ARAKI , Mihoko Ohashi , Yoshito Tanaka , Tetsuo Shimizu
发明人： Takayuki ARAKI , Mihoko Ohashi , Yoshito Tanaka , Tetsuo Shimizu
IPC分类号： C08F220/22
CPC分类号： C09D127/12 , C08F8/00 , C08F8/14 , C08F16/32 , C08F214/18 , C08F290/04 , Y10T428/3154 , C08F14/18
摘要： A curable fluorine-containing polymer having a number average molecular weight of from 500 to 1,000,000 and is represented by the formula (1): -(A)-(M)- in which the structural unit M is a structural unit derived from a fluorine-containing ethylenic monomer and represented by the formula (M): [—(CX1X2—CX3)—]—(CX4CX5)a—(C═O)b(O)c—Rf, wherein X1 and X2 are the same or different and each is H or F; X3 is H, F, CH3 or CF3; X4 and X5 are the same or different and each is H, F or CF3; Rf is an organic group as defined herein; a is 0 or an integer of from 1 to 3; b and c are the same or different and each is 0 or 1, and the structural unit A is derived from a monomer copolymerizable with the fluorine-containing ethylenic monomer from which M is derived.
摘要翻译：数均分子量为500〜1,000,000的可固化的含氟聚合物，由式（1）表示： - （A） - （M） - 其中结构单元M是衍生自氟的结构单元由（M）表示：[ - （CX1X2-CX3） - ] - （CX4CX5）a-（C = O）b（O）c-Rf，其中X1和X2相同或不同并分别为H或F; X3是H，F，CH3或CF3; X4和X5相同或不同，分别为H，F或CF 3; Rf是本文定义的有机基团; a为0或1〜3的整数; b和c相同或不同，分别为0或1，结构单元A衍生自可与M衍生的含氟乙烯性单体共聚的单体。

80. 发明授权

US07682843B2 Semiconductor fabrication system, and flow rate correction method and program for semiconductor fabrication system 有权
标题翻译：半导体制造系统，半导体制造系统的流量校正方法和程序
公开(公告)号：US07682843B2
公开(公告)日：2010-03-23
申请号：US11817104
申请日：2006-06-28
申请人： Shuji Moriya , Tsuneyuki Okabe , Hiroyuki Ebi , Tetsuo Shimizu , Hitoshi Kitagawa
发明人： Shuji Moriya , Tsuneyuki Okabe , Hiroyuki Ebi , Tetsuo Shimizu , Hitoshi Kitagawa
IPC分类号： H01L21/66
CPC分类号： G05D7/0658 , C23C16/455 , C23C16/45561 , C23C16/52
摘要： Zero point shift based on thermal siphon effect occurring actually when a substrate is processed is detected accurately and corrected suitably. The semiconductor fabrication system comprises a gas supply passage (210) for supplying gas into a heat treatment unit (110), an MFC (240) for comparing an output voltage from a detecting unit for detecting the gas flow rate of the gas supply passage with a set voltage corresponding to a preset flow rate and controlling the gas flow rate of the gas supply passage to the set flow rate, and a control unit (300). The control unit replaces gas in the MFC by gas which is to be used at least for processing a substrate before the substrate is processed, detects the output voltage from the MFC under a state where valves (230, 250) provided in the upstream and the downstream of the MFC are closed and stores the detected output voltage in a storage unit, corrects the set voltage corresponding to the flow rate of gas to be used for processing the substrate based on the output voltage from the MFC stored in the storage unit at the time of processing the substrate, and sets the corrected set voltage in the MFC.
摘要翻译：基于处理基板时实际发生的热虹吸效应的零点偏移被准确地检测并适当地校正。半导体制造系统包括用于将气体供给到热处理单元（110）中的气体供给通道（210），MFC（240），用于将用于检测气体供应通道的气体流量的检测单元的输出电压与与设定的流量对应的设定电压，将气体供给通路的气体流量控制为设定的流量，以及控制单元（300）。控制单元通过在基板被处理之前至少用于处理基板的气体来替换MFC中的气体，在设置在上游的阀（230,250）的状态下检测来自MFC的输出电压，关闭MFC的下游并将检测到的输出电压存储在存储单元中，基于来自存储在存储单元中的MFC的输出电压来校正与用于处理衬底的气体的流量对应的设定电压处理基板的时间，并将校正的设定电压设置在MFC中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式