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71. 发明授权

US07122851B2 Semiconductor device with perovskite capacitor 有权
标题翻译：具有钙钛矿电容器的半导体器件
公开(公告)号：US07122851B2
公开(公告)日：2006-10-17
申请号：US10834928
申请日：2004-04-30
申请人： Hiroshi Itokawa , Koji Yamakawa , Katsuaki Natori
发明人： Hiroshi Itokawa , Koji Yamakawa , Katsuaki Natori
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： A semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate, and including a bottom electrode, a top electrode and a dielectric film between the bottom and top electrodes, the bottom electrode including a conductive film selected from a noble metal film and a noble metal oxide film, a metal oxide film having a perovskite structure, provided between the dielectric film and the conductive film, expressed by ABO3, and containing first metal element as B-site element, and a metal film provided between the conductive film and the metal oxide film, and containing second metal element which is B-site element of a metal oxide having a perovskite structure, a decrease of Gibbs free energy when the second metal element forms oxide being larger than that when the first metal element forms oxide, a thickness of the metal oxide film being 5 nm or less.
摘要翻译：一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且在底电极和顶电极之间包括底电极，顶电极和电介质膜，底电极包括选自贵金属膜和由ABO 3 N表示并且包含第一金属元素作为B位元素的电介质膜和导电膜之间的贵金属氧化物膜，具有钙钛矿结构的金属氧化物膜，以及设置在导电膜和金属氧化物膜之间的金属膜，并且包含作为具有钙钛矿结构的金属氧化物的B位元素的第二金属元素，当第二金属元素形成氧化物时，吉布斯自由能的降低大于当第一金属元素形成氧化物时，金属氧化物膜的厚度为5nm以下。

72. 发明授权

US07105400B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07105400B2
公开(公告)日：2006-09-12
申请号：US10673262
申请日：2003-09-30
申请人： Keitaro Imai , Koji Yamakawa , Hiroshi Itokawa , Katsuaki Natori , Osamu Arisumi , Keisuke Nakazawa , Bum-ki Moon
发明人： Keitaro Imai , Koji Yamakawa , Hiroshi Itokawa , Katsuaki Natori , Osamu Arisumi , Keisuke Nakazawa , Bum-ki Moon
IPC分类号： H01L21/8234 , H01L21/8244 , H01L21/336
CPC分类号： H01L27/11502 , H01L27/11507
摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.
摘要翻译：公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。

73. 发明申请

US20060108624A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20060108624A1
公开(公告)日：2006-05-25
申请号：US11024422
申请日：2004-12-30
申请人： Hiroshi Itokawa , Koji Yamakawa
发明人： Hiroshi Itokawa , Koji Yamakawa
IPC分类号： H01L29/94
CPC分类号： H01L27/11507 , G11C11/22 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/75
摘要： A semiconductor device comprises a capacitor including a bottom electrode, a top electrode, and a dielectric film, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a conductive metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film, the dielectric film including an insulating metal oxide film having a perovskite structure, the insulating metal oxide film being expressed by A(ZrxTi1-x)O3 (A is at least one A site element, 0
摘要翻译：一种半导体器件包括：包括底电极，顶电极和电介质膜的电容器，所述底电极包括含有铱的第一导电膜，设置在所述电介质膜和所述第一导电膜之间并由贵金属形成的第二导电膜金属膜，设置在介电膜和第二导电膜之间并由具有钙钛矿结构的导电金属氧化物膜形成的第三导电膜，以及设置在第一导电膜和第二导电膜之间的扩散防止膜，并且至少包括金属膜和金属氧化物膜之一，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散，所述电介质膜包括具有钙钛矿结构的绝缘金属氧化物膜，所述绝缘金属氧化物膜由A（（A是至少一个A位点元素，0

74. 发明授权

US07042037B1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07042037B1
公开(公告)日：2006-05-09
申请号：US10986060
申请日：2004-11-12
申请人： Hiroshi Itokawa , Koji Yamakawa , Tohru Ozaki , Yoshinori Kumura , Takamichi Tsuchiya , Nicolas Nagel , Bum-Ki Moon , Andreas Hilliger
发明人： Hiroshi Itokawa , Koji Yamakawa , Tohru Ozaki , Yoshinori Kumura , Takamichi Tsuchiya , Nicolas Nagel , Bum-Ki Moon , Andreas Hilliger
IPC分类号： H01L31/062
CPC分类号： H01L28/55 , G11C11/22 , H01L27/11502 , H01L27/11507 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a capacitor provided above the semiconductor substrate and including a bottom electrode, a top electrode, and a dielectric film provided between the bottom electrode and the top electrode, the bottom electrode comprising a first conductive film containing iridium, a second conductive film provided between the dielectric film and the first conductive film and formed of a noble metal film, a third conductive film provided between the dielectric film and the second conductive film and formed of a metal oxide film having a perovskite structure, and a diffusion prevention film provided between the first conductive film and the second conductive film and including at least one of a metal film and a metal oxide film, the diffusion prevention film preventing diffusion of iridium contained in the first conductive film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上方并包括底电极，顶电极和设置在底电极和顶电极之间的电介质膜的电容器，底电极包括含有铱，设置在电介质膜和第一导电膜之间并由贵金属膜形成的第二导电膜，设置在电介质膜和第二导电膜之间并由具有钙钛矿结构的金属氧化物膜形成的第三导电膜，以及设置在所述第一导电膜和所述第二导电膜之间并且包括金属膜和金属氧化物膜中的至少一种的防扩散膜，所述扩散防止膜防止包含在所述第一导电膜中的铱的扩散。

75. 发明授权

US07009230B2 Barrier stack with improved barrier properties 失效
标题翻译：阻隔层具有改善的阻隔性能
公开(公告)号：US07009230B2
公开(公告)日：2006-03-07
申请号：US10604323
申请日：2003-07-10
申请人： Bum Ki Moon , Gerhard Beitel , Nicolas Nagel , Andreas Hilliger , Koji Yamakawa , Keitaro Imai
发明人： Bum Ki Moon , Gerhard Beitel , Nicolas Nagel , Andreas Hilliger , Koji Yamakawa , Keitaro Imai
IPC分类号： H01L29/76
CPC分类号： H01L27/11502 , H01L21/28568 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： An improved barrier stack for inhibiting diffusion of atoms or molecules, such as O2 is disclosed. The barrier stack is particularly useful in capacitor over plug structures to prevent plug oxidation which can adversely impact the reliability of the structures. The barrier stack includes first and second barrier layers. In one embodiment, the first barrier layer comprises first and second sub-barrier layers having mismatched grain boundaries. The sub-barrier layers are selected from, for example, Ir, Ru, Pd, Rh, or alloys thereof. By providing mismatched grain boundaries, the interface of the sub-barrier layers block the diffusion path of oxygen. To further enhance the barrier properties, the first barrier layer is passivated with O2 using, for example, a rapid thermal oxidation. The RTO forms a thin oxide layer on the surface of the first barrier layer. The oxide layer can advantageously promote mismatching of the grain boundaries of the first and second sub-barrier layer. The second barrier layer comprises a conductive oxide.
摘要翻译：公开了用于抑制原子或分子扩散的改进的阻挡层，例如O 2。势垒堆叠在电容器超过插塞结构中特别有用，以防止插塞氧化，这可能不利地影响结构的可靠性。阻挡层包括第一和第二阻挡层。在一个实施例中，第一阻挡层包括具有失配的晶界的第一和第二子阻挡层。亚阻挡层选自例如Ir，Ru，Pd，Rh或其合金。通过提供错配的晶界，子阻挡层的界面阻挡氧的扩散路径。为了进一步增强阻挡性能，使用例如快速热氧化，第一阻挡层用O 2 2钝化。 RTO在第一阻挡层的表面上形成薄的氧化物层。氧化物层可以有利地促进第一和第二子阻挡层的晶界的失配。第二阻挡层包括导电氧化物。

76. 发明授权

US06933549B2 Barrier material 失效
标题翻译：阻隔材料
公开(公告)号：US06933549B2
公开(公告)日：2005-08-23
申请号：US10248896
申请日：2003-02-28
申请人： Karl Hornik , Koji Yamakawa , Hiroshi Itokawa
发明人： Karl Hornik , Koji Yamakawa , Hiroshi Itokawa
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/76
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A barrier layer protecting, for example, a ferroelectric capacitor from hydrogen is described. The barrier layer comprises aluminum oxide with barrier enhancement dopants. The barrier enhancement dopants are selected from Ti, Hf, Zr, their oxides, or a combination thereof.
摘要翻译：描述了保护例如来自氢的铁电电容器的阻挡层。阻挡层包括具有屏障增强掺杂剂的氧化铝。势垒增强掺杂剂选自Ti，Hf，Zr，它们的氧化物或其组合。

77. 发明申请

US20050070031A1 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20050070031A1
公开(公告)日：2005-03-31
申请号：US10673262
申请日：2003-09-30
申请人： Keitaro Imai , Koji Yamakawa , Hiroshi Itokawa , Katsuaki Natori , Osamu Arisumi , Keisuke Nakazawa , Bum-ki Moon
发明人： Keitaro Imai , Koji Yamakawa , Hiroshi Itokawa , Katsuaki Natori , Osamu Arisumi , Keisuke Nakazawa , Bum-ki Moon
IPC分类号： H01L21/00 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507
摘要： There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.
摘要翻译：公开了一种制造半导体器件的方法，包括在半导体衬底上形成包括层间绝缘膜的下面的区域，在下面的区域上形成氧化铝膜，在氧化铝膜上形成孔，用底部电极填充孔膜，在底部电极膜上形成电介质膜，并在电介质膜上形成顶部电极膜。

78. 发明申请

US20050051823A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050051823A1
公开(公告)日：2005-03-10
申请号：US10833096
申请日：2004-04-28
申请人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
发明人： Keisuke Nakazawa , Koji Yamakawa , Katsuaki Natori , Soichi Yamazaki , Hiroshi Itokawa , Hiroyuki Kanaya
IPC分类号： H01L27/105 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8246 , H01L27/115 , H01L21/00 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L31/062
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02266 , H01L21/31691 , H01L27/11507 , H01L28/55 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.
摘要翻译：公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括含有Pb，Sr，Zr，Ti，Ru和O的膜和包含Pb，Zr，Ti和O的电介质膜，提供在含有Pb，Sr，Zr，Ti，Ru和O的膜上

79. 发明授权

US06325482B1 Method and apparatus for correcting printhead, printhead corrected by this apparatus, and printing apparatus using this printhead 失效
标题翻译：用于校正打印头，由该装置校正的打印头以及使用该打印头的打印装置的方法和装置
公开(公告)号：US06325482B1
公开(公告)日：2001-12-04
申请号：US09391489
申请日：1999-09-08
申请人： Kimiyuki Hayasaki , Koji Yamakawa , Yutaka Koizumi , Tsuyoshi Orikasa , Hiroyuki Kigami , Hisashi Fukai , Takayuki Ono , Masayoshi Ohkawa
发明人： Kimiyuki Hayasaki , Koji Yamakawa , Yutaka Koizumi , Tsuyoshi Orikasa , Hiroyuki Kigami , Hisashi Fukai , Takayuki Ono , Masayoshi Ohkawa
IPC分类号： B41J29393
CPC分类号： B41J29/393
摘要： An apparatus and method for accurately and rapidly correcting a printing characteristic of a printhead, a printhead whose printing characteristic is corrected by the above apparatus, and a printing apparatus using the printhead. In the apparatus for correcting the printing characteristic of the printhead, n kinds of printing control signal patterns are used to a full line printhead, printing patterns are experimentally printed in response to the printing control signal patterns on a printing medium and a reference density distribution is generated from one of n kinds of the printing patterns printed. Then, one of the n kinds of printing control signal patterns is selected for each of a plurality of printing elements such that a density value on each pixel is equal or close to the reference density distribution. In this case, a similar selection is carried out on another reference density distribution generated on the basis of another one of the n kinds of printing patterns, and an optimum one of the n kinds of printing control signal patterns is determined as correction data.
摘要翻译：一种用于精确和快速地校正打印头的打印特性的装置和方法，其打印特性由上述装置校正的打印头和使用该打印头的打印装置。在用于校正打印头的打印特性的装置中，n种打印控制信号图案被用于全行打印头，打印模式是根据打印介质上的打印控制信号图案进行实验打印的，参考密度分布是从印刷的n种印刷图案中的一种产生。然后，为多个打印元件中的每一个选择n种打印控制信号图案中的一种，使得每个像素上的浓度值等于或接近参考密度分布。在这种情况下，对基于n种打印模式中的另一种生成的另一参考密度分布进行类似的选择，并且将n种打印控制信号模式中的最佳一种确定为校正数据。

80. 发明授权

US5781213A Liquid storing container having filter interface for recording apparatus 失效
标题翻译：液体储存容器具有用于记录装置的过滤器接口
公开(公告)号：US5781213A
公开(公告)日：1998-07-14
申请号：US757273
申请日：1996-12-02
申请人： Toshihiko Ujita , Koji Yamakawa , Masanori Takenouchi , Sadayuki Sugama , Kenjiro Watanabe , Torachika Osada , Kazuhiro Nakajima , Takayoshi Tsutsumi , Hidemi Kubota , Yasuo Kotaki , Keiichiro Tsukuda , Yohei Sato
发明人： Toshihiko Ujita , Koji Yamakawa , Masanori Takenouchi , Sadayuki Sugama , Kenjiro Watanabe , Torachika Osada , Kazuhiro Nakajima , Takayoshi Tsutsumi , Hidemi Kubota , Yasuo Kotaki , Keiichiro Tsukuda , Yohei Sato
IPC分类号： B41J2/175 , B41J2/05 , B41J2/165 , B41J2/18 , B41J2/185
CPC分类号： B41J2/17523 , B41J2/165 , B41J2/1652 , B41J2/17513 , B41J2/1752 , B41J2/17553 , B41J2/17563 , B41J2/17503
摘要： A liquid storing container, having a liquid feed portion for supplying liquid to a liquid injection recording apparatus, includes a rectangular receiving case for a porous member, and a filter that compresses the porous member. The liquid storing container provides for controlled feeding of liquid through a contact portion where the filter compresses the porous member, and a proper balance of air and liquid is achieved by symmetrical surfaces located within the receiving case.
摘要翻译：一种液体储存容器，具有用于向液体注射记录装置供应液体的液体供给部分，包括用于多孔构件的矩形接收壳体和压缩多孔构件的过滤器。液体储存容器提供液体通过过滤器压缩多孔构件的接触部分的受控进料，并且通过位于接收壳体内的对称表面实现空气和液体的适当平衡。

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