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    • 78. 发明授权
    • Positive tone lithography with carbon dioxide development systems
    • 正音光刻与二氧化碳开发系统
    • US06929904B2
    • 2005-08-16
    • US10294223
    • 2002-11-14
    • Joseph M. DeSimone
    • Joseph M. DeSimone
    • G03F7/004G03F7/039G03F7/32G03F7/30
    • G03F7/0392G03F7/0046G03F7/32
    • A process of forming a resist image in a microelectronic substrate, the process comprises the steps of: (a) providing a substrate having a polymer coating thereon, wherein the polymer is insoluble in water having a pH less than or equal to a specified pH (e.g., 7.0, 6, 5, or 4); then (b) imagewise exposing the coating to radiation such that exposed and unexposed coating portions are formed, with said exposed coating portions being soluble in water having a pH less than or equal to said specified pH7.0; and then (c) contacting said coating to a developing composition comprising carbon dioxide and water, said water having a specified pH less than or equal to 7.0 (and preferably a pH of about 2 or 3 to 4, 5 or 6; i.e. a specified pH less than or equal to 6, 5, or 4), so that said exposed coating portions are preferentially removed from the substrate as compared to said unexposed coating portions to form an image thereon.
    • 一种在微电子衬底中形成抗蚀剂图像的方法,该方法包括以下步骤:(a)提供其上具有聚合物涂层的基底,其中聚合物不溶于pH小于或等于特定pH的水中 例如,7.0,6,5或4); 然后(b)将涂层成像曝光到辐射,使得形成暴露和未曝光的涂布部分,所述暴露的涂布部分可溶于pH小于或等于所述指定pH7.0的水中; 然后(c)使所述涂层与包含二氧化碳和水的显影组合物接触,所述水的特定pH小于或等于7.0(优选pH为约2或3至4,5或6;即指定的 pH小于或等于6,5或4),使得与所述未曝光的涂布部分相比,所述暴露的涂布部分优先从基底去除以在其上形成图像。