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71. 发明授权

US09406846B2 Light emitting device and method of manufacturing the same for improving the light extraction efficiency 有权
标题翻译：发光装置及其制造方法，以提高光提取效率
公开(公告)号：US09406846B2
公开(公告)日：2016-08-02
申请号：US12936292
申请日：2009-04-06
申请人： June O Song
发明人： June O Song
IPC分类号： H01L33/00 , H01L33/44 , H01L33/38 , H01L33/40 , H01L33/46
CPC分类号： H01L33/44 , H01L33/387 , H01L33/40 , H01L33/46 , H01L2933/0091
摘要： A light emitting device according to the embodiment includes a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a second conductive semiconductor layer on the active layer; a first passivation layer surrounding the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer; a second connection layer electrically connected to the second conductive semiconductor layer through the first passivation layer; a first light extracting structure layer on the first passivation layer and the second connection layer; a first electrode layer electrically connected to the first conductive semiconductor layer; and a second electrode layer on the first light extracting structure layer.
摘要翻译：根据实施例的发光器件包括第一导电半导体层; 在第一导电半导体层上的有源层; 在所述有源层上的第二导电半导体层; 围绕所述第一导电半导体层，所述有源层和所述第二导电半导体层的第一钝化层; 通过所述第一钝化层与所述第二导电半导体层电连接的第二连接层; 在所述第一钝化层和所述第二连接层上的第一光提取结构层; 电连接到第一导电半导体层的第一电极层; 以及第一光提取结构层上的第二电极层。

72. 发明授权

US08829554B2 Light emitting element and a production method therefor 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08829554B2
公开(公告)日：2014-09-09
申请号：US12936090
申请日：2009-04-02
申请人： June O Song
发明人： June O Song
IPC分类号： H01L33/00 , H01L33/40 , H01L33/44
CPC分类号： H01L33/0079 , H01L33/405 , H01L33/44
摘要： A light emitting device according to the embodiment includes a support substrate; a reflective layer over the support substrate; an ohmic contact layer over the reflective layer; a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer and a first conductive semiconductor layer over the ohmic contact layer; a first passivation layer surrounding a lateral side of the light emitting semiconductor layer; and a second passivation layer surrounding lateral sides of the first passivation layer and the reflective layer.
摘要翻译：根据实施例的发光器件包括支撑衬底; 在支撑衬底上的反射层; 反射层上的欧姆接触层; 包括在所述欧姆接触层上的第二导电半导体层，有源层和第一导电半导体层的发光半导体层; 围绕所述发光半导体层的侧面的第一钝化层; 以及围绕所述第一钝化层和所述反射层的横向侧面的第二钝化层。

73. 发明授权

US08633508B2 Semiconductor element and a production method therefor 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US08633508B2
公开(公告)日：2014-01-21
申请号：US12990943
申请日：2009-05-04
申请人： June O Song
发明人： June O Song
IPC分类号： H01L29/24
CPC分类号： H01L21/0237 , H01L21/0245 , H01L21/02458 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： A semiconductor device according to the embodiment includes a growth substrate; a first buffer layer having a compositional formula of RexSiy (0≦x≦2, 0≦y≦2) over the growth substrate; and a group III nitride-based epitaxial semiconductor layer having a compositional formula of InxAlyGa1-x-yN (0≦x, 0≦y, x+y≦1) over the first buffer layer.
摘要翻译：根据实施例的半导体器件包括生长衬底; 在生长衬底上具有组成式RexSiy（0 @ x @ 2,0 @ y @ 2）的第一缓冲层; 以及在第一缓冲层上具有In x Al y Ga 1-x-y N（0 @ x，0 @ y，x + y @ 1）的组成式的III族氮化物基外延半导体层。

74. 发明授权

US08487341B2 Semiconductor device having a plurality of bonding layers 有权
标题翻译：具有多个接合层的半导体器件
公开(公告)号：US08487341B2
公开(公告)日：2013-07-16
申请号：US12933599
申请日：2009-03-19
申请人： June O Song
发明人： June O Song
IPC分类号： H01L33/00
CPC分类号： H01L29/0657 , H01L33/0079 , H01L33/405 , H01L33/44
摘要： Provided is a method of manufacturing a semiconductor device. In the method, a growth substrate provided with a single crystal semiconductor thin layer, a support substrate, and a temporary substrate are prepared, the growth substrate, the support substrate, and the temporary substrate are bonded to one another with the support substrate therebetween through functional wafer coupling layers, the growth substrate is lifted off from the single crystal semiconductor thin layer, and the temporary substrate is lifted off from the support substrate.
摘要翻译：提供一种制造半导体器件的方法。在该方法中，制备设置有单晶半导体薄层，支撑衬底和临时衬底的生长衬底，生长衬底，支撑衬底和临时衬底通过其间的支撑衬底彼此接合，功能晶片耦合层，从单晶半导体薄层剥离生长衬底，并将临时衬底从支撑衬底上提起。

75. 发明申请

US20110163294A1 LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权
标题翻译：发光元件及其生产方法
公开(公告)号：US20110163294A1
公开(公告)日：2011-07-07
申请号：US12990398
申请日：2009-05-04
申请人： June O Song
发明人： June O Song
IPC分类号： H01L33/04 , H01L33/32
CPC分类号： H01L33/0066 , H01L33/14 , H01L33/16 , H01L33/32
摘要： Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer on the support substrate, a current spreading layer on the wafer bonding layer, a second conductive semiconductor layer on the current spreading layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, a surface modification layer on the first conductive semiconductor layer, and a first electrode layer on the surface modification layer.
摘要翻译：公开了一种发光器件及其制造方法。发光装置包括支撑基板，支撑基板上的晶片接合层，晶片接合层上的电流扩散层，电流扩展层上的第二导电半导体层，第二导电半导体层上的有源层，有源层上的第一导电半导体层，第一导电半导体层上的表面改性层，以及表面改性层上的第一电极层。

76. 发明申请

US20110108798A1 LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR 有权
标题翻译：发光元件及其生产方法
公开(公告)号：US20110108798A1
公开(公告)日：2011-05-12
申请号：US12989200
申请日：2009-04-23
申请人： June O Song
发明人： June O Song
IPC分类号： H01L33/06
CPC分类号： H01L33/0079 , H01L33/14 , H01L33/22
摘要： Disclosed is a light emitting device. The light emitting device includes a support substrate; a planar layer over the support substrate; a wafer bonding layer over the planar layer; a current spreading layer over the wafer bonding layer; a second conductive semiconductor layer over the current spreading layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; a first electrode layer over the first conductive semiconductor layer; and a second electrode layer over the current spreading layer.
摘要翻译：公开了一种发光器件。发光器件包括支撑衬底; 在所述支撑衬底上的平面层; 平面层上的晶片接合层; 晶片接合层上的电流扩展层; 电流扩散层上的第二导电半导体层; 在所述第二导电半导体层上方的有源层; 在所述有源层上的第一导电半导体层; 在所述第一导电半导体层上的第一电极层; 以及在电流扩展层上的第二电极层。

77. 发明授权

US07795050B2 Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same 有权
标题翻译：单晶氮化物系半导体基板及其制造方法
公开(公告)号：US07795050B2
公开(公告)日：2010-09-14
申请号：US12416414
申请日：2009-04-01
申请人： June O Song
发明人： June O Song
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , C30B25/18 , C30B29/403 , H01L33/12
摘要： A nitride-based light emitting device is manufactured by using a single-crystal nitride-based semiconductor substrate. A seed material layer is deposited on a first substrate where organic residues including a natural oxide layer are removed from an upper surface of the first substrate. A multifunctional substrate is grown from the seed material layer. The single-crystal nitride-based semiconductor layer including a nitride-based buffer layer is formed on the multifunctional substrate. The seed material layer primarily assists the growth of the multifunctional substrate, which is essentially required for the growth of the single-crystal nitride-based semiconductor substrate. The multifunctional substrate is prepared in the form of a single-crystal layer or a poly-crystal layer having a hexagonal crystalline structure. The light emitting device employing the single-crystal nitride-based semiconductor substrate is used as a next-generation white light source having high capacity, large area, high brightness and high performance.
摘要翻译：通过使用单晶氮化物系半导体基板制造氮化物系发光元件。种子材料层沉积在第一衬底上，其中包括自然氧化物层的有机残余物从第一衬底的上表面去除。从种子材料层生长多功能底物。在多功能基板上形成包含氮化物系缓冲层的单晶氮化物系半导体层。种子材料层主要帮助生长基本上为单晶氮化物基半导体衬底的生长所需的多功能衬底的生长。多功能基板以具有六方晶系结构的单晶层或多晶层的形式制备。采用单晶氮化物类半导体衬底的发光器件用作具有高容量，大面积，高亮度和高性能的下一代白光源。

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