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    • 71. 发明授权
    • Swappable sets of partial-mapping tables in a flash-memory system with a command queue for combining flash writes
    • 具有用于组合闪存写入的命令队列的闪存系统中的可转换的部分映射表
    • US08112574B2
    • 2012-02-07
    • US12347306
    • 2008-12-31
    • Charles C. LeeFrank YuAbraham C. Ma
    • Charles C. LeeFrank YuAbraham C. Ma
    • G06F12/10
    • G06F12/0246G06F2212/7201G06F2212/7203G11C16/102G11C2216/30
    • A flash controller has a flash interface accessing physical blocks of multi-level-cell (MLC) flash memory. An Extended Universal-Serial-Bus (EUSB) interface loads host commands into a command queue where writes are re-ordered and combined to reduce flash writes. A partial logical-to-physical L2P mapping table in a RAM has entries for only 1 of N sets of L2P mapping tables. The other N−1 sets are stored in flash memory and fetched into the RAM when a L2P table miss occurs. The RAM required for mapping is greatly reduced. A data buffer stores one page of host write data. Sector writes are merged using the data buffer. The data buffer is flushed to flash when a different page is written, while the partial logical-to-physical mapping table is flushed to flash when a L2P table miss occurs, when the host address is to a different one of the N sets of L2P mapping tables.
    • 闪存控制器具有访问多电平单元(MLC)闪存的物理块的闪存接口。 扩展通用串行总线(EUSB)接口将主机命令加载到命令队列中,其中写入被重新排序并组合以减少闪存写入。 RAM中的部分逻辑到物理L2P映射表仅具有N组L2P映射表中的1个的条目。 其他N-1组存储在闪存中,并在发生L2P表错误时被提取到RAM中。 映射所需的RAM大大降低。 数据缓冲器存储一页主机写入数据。 扇区写入使用数据缓冲区进行合并。 当写入不同的页面时,数据缓冲区被刷新闪存,而当L2P表错过发生时,部分逻辑到物理映射表被刷新为闪存,当主机地址是N组的L2P中的不同的一个 映射表。
    • 73. 发明授权
    • Flash micro-controller with shadow boot-loader SRAM for dual-device booting of micro-controller and host
    • 闪存微控制器带有引导加载器的SRAM,用于微控制器和主机的双设备启动
    • US07761653B2
    • 2010-07-20
    • US11875648
    • 2007-10-19
    • Charles C. LeeDavid Q. ChowAbraham C. MaFrank YuMing-Shiang Shen
    • Charles C. LeeDavid Q. ChowAbraham C. MaFrank YuMing-Shiang Shen
    • G06F12/00
    • G06F9/441
    • A flash microcontroller has a Static Random-Access-Memory (SRAM) buffer that stores several blocks of boot code read from a flash memory. The boot code includes an initial boot loader, boot code and a control program that are executed by the flash microcontroller, and an operating system OS image and an external-host control program that are executed by an external host. Both the external host and the microcontroller are booted from boot code buffered in the SRAM buffer. A first-reset-read address from the external host is captured by the microcontroller during its boot sequence and stored in a mapping table along with a physical address of the block in the SRAM buffer with the operating system OS image and the external-host control program. A boot-loader state machine reads the flash ID and programs flash parameter registers with timing parameters for the flash memory.
    • 闪存微控制器具有静态随机存取存储器(SRAM)缓冲器,其存储从闪存读取的几个引导代码块。 引导代码包括由闪存微控制器执行的初始引导加载程序,引导代码和控制程序,以及由外部主机执行的操作系统OS映像和外部主机控制程序。 外部主机和微控制器均由缓冲在SRAM缓冲区中的引导代码引导。 微控制器在其引导序列期间捕获来自外部主机的第一复位读取地址,并将其与SRAM缓冲器中具有操作系统OS映像和外部主机控制的块的物理地址一起存储在映射表中 程序。 引导加载器状态机读取闪存ID,并使用Flash存储器的时序参数对闪存参数寄存器进行编程。
    • 76. 发明申请
    • Multi-Level Striping and Truncation Channel-Equalization for Flash-Memory System
    • 闪存系统的多级条带和截断信道均衡
    • US20090240873A1
    • 2009-09-24
    • US12475457
    • 2009-05-29
    • Frank YuCharles C. LeeAbraham C. MaMyeongjin Shin
    • Frank YuCharles C. LeeAbraham C. MaMyeongjin Shin
    • G06F12/00G06F12/02H03M13/00
    • G06F12/0246G06F3/0608G06F3/0631G06F3/0688G06F2212/7203G06F2212/7208G11C11/5678G11C13/0004G11C29/765
    • Truncation reduces the available striped data capacity of all flash channels to the capacity of the smallest flash channel. A solid-state disk (SSD) has a smart storage switch salvages flash storage removed from the striped data capacity by truncation. Extra storage beyond the striped data capacity is accessed as scattered data that is not striped. The size of the striped data capacity is reduced over time as more bad blocks appear. A first-level striping map stores striped and scattered capacities of all flash channels and maps scattered and striped data. Each flash channel has a Non-Volatile Memory Device (NVMD) with a lower-level controller that converts logical block addresses (LBA) to physical block addresses (PBA) that access flash memory in the NVMD. Wear-leveling and bad block remapping are preformed by each NVMD. Source and shadow flash blocks are recycled by the NVMD. Two levels of smart storage switches enable three-level controllers.
    • 截断将所有闪存通道的可用条带数据容量减小到最小闪存通道的容量。 固态磁盘(SSD)具有智能存储交换机,通过截断来保护从条带数据容量中移除的闪存存储。 超出条带数据容量的额外存储被访问为不带条纹的分散数据。 随着更多的坏块出现,条带数据容量的大小随着时间的推移而减少。 一级条形图存储所有闪存通道的条纹和分散容量,并映射散射和条纹数据。 每个闪存通道都具有一个非易失性存储器件(NVMD),该器件具有将逻辑块地址(LBA)转换为访问NVMD中闪存的物理块地址(PBA)的低级别控制器。 磨损平整和坏块重映射由每个NVMD进行。 源和阴影闪存块由NVMD回收。 两级智能存储交换机支持三级控制器。
    • 77. 发明申请
    • Swappable Sets of Partial-Mapping Tables in a Flash-Memory System With A Command Queue for Combining Flash Writes
    • 具有用于组合Flash写入的命令队列的闪存系统中可部署的部分映射表集
    • US20090113121A1
    • 2009-04-30
    • US12347306
    • 2008-12-31
    • Charles C. LeeFrank YuAbraham C. Ma
    • Charles C. LeeFrank YuAbraham C. Ma
    • G06F12/02G06F12/00
    • G06F12/0246G06F2212/7201G06F2212/7203G11C16/102G11C2216/30
    • A flash controller has a flash interface accessing physical blocks of multi-level-cell (MLC) flash memory. An Extended Universal-Serial-Bus (EUSB) interface loads host commands into a command queue where writes are re-ordered and combined to reduce flash writes. A partial logical-to-physical L2P mapping table in a RAM has entries for only 1 of N sets of L2P mapping tables. The other N−1 sets are stored in flash memory and fetched into the RAM when a L2P table miss occurs. The RAM required for mapping is greatly reduced. A data buffer stores one page of host write data. Sector writes are merged using the data buffer. The data buffer is flushed to flash when a different page is written, while the partial logical-to-physical mapping table is flushed to flash when a L2P table miss occurs, when the host address is to a different one of the N sets of L2P mapping tables.
    • 闪存控制器具有访问多电平单元(MLC)闪存的物理块的闪存接口。 扩展通用串行总线(EUSB)接口将主机命令加载到命令队列中,其中写入被重新排序并组合以减少闪存写入。 RAM中的部分逻辑到物理L2P映射表仅具有N组L2P映射表中的1个的条目。 其他N-1组存储在闪存中,并在发生L2P表错误时被提取到RAM中。 映射所需的RAM大大降低。 数据缓冲器存储一页主机写入数据。 扇区写入使用数据缓冲区进行合并。 当写入不同的页面时,数据缓冲区被刷新闪存,而当L2P表错过发生时,部分逻辑到物理映射表被刷新为闪存,当主机地址是N组的L2P中的不同的一个 映射表。
    • 79. 发明授权
    • Low-power USB flash card reader using bulk-pipe streaming with UAS command re-ordering and channel separation
    • 低功耗USB闪存卡阅读器,采用UAS命令重新排序和通道分离的大容量流式传输
    • US08200862B2
    • 2012-06-12
    • US12887477
    • 2010-09-21
    • Charles C. LeeFrank YuAbraham C. Ma
    • Charles C. LeeFrank YuAbraham C. Ma
    • G06F13/12G06F13/00G06F12/02
    • G06F13/28G11C13/0004G11C16/102G11C2216/30Y02D10/14
    • A flash-card reader improves transmission efficiency by using bulk streaming of multiple pipes. A bulk data-out pipe carries host write data to the card reader and can operate in parallel with a bulk data-in pipe that carries host read data that was read from a flash card attached to the card reader. Status packets do not block data packets since the he status packets are buffered through a separate status pipe, and commands are buffered through a command pipe. Flash data from multiple flash cards are interleaved as separate endpoints that share the bulk data-in pipe. A data in/out streaming state machine controls streaming bulk data through the bulk data-in and data-out pipes, while a status streaming state machine controls streaming status packets through the status pipe. Transaction overhead is reduced using bulk streaming where packets for several commands are combined into the same bulk streams.
    • 闪存卡读卡器通过使用多个管道的批量流传输来提高传输效率。 批量数据输出管道将主机写入数据传送到读卡器,并且可以与承载从附接到读卡器的闪存卡读取的主机读取数据的批量数据输入管并行操作。 状态数据包不会阻塞数据包,因为状态数据包通过单独的状态管道进行缓冲,命令通过命令管道缓冲。 来自多个闪存卡的闪存数据被交织为共享大容量数据管道的单独端点。 数据输入/输出流状态机通过批量数据输入和数据输出管道控制流批量数据,而状态流状态机通过状态管道控制流状态数据包。 使用批量流量减少事务开销,其中几个命令的数据包被组合成相同的批量流。