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    • 72. 发明授权
    • General charging method
    • 一般充电方式
    • US07313230B2
    • 2007-12-25
    • US10558620
    • 2003-12-31
    • Zhijian LuXin ZhangXiaozheng GuoQingchen ChuYoukun Chen
    • Zhijian LuXin ZhangXiaozheng GuoQingchen ChuYoukun Chen
    • H04M15/00
    • H04L12/14G06Q30/0284G06Q30/04G06Q50/188
    • The present invention provides a general charging method applicable to a charging system in the communication field, comprising steps of establishing a charging strategy and performing the charging based upon the charging strategy. The charging strategy comprises a plurality of priorities each of which comprises a plurality of periods of time, and each of the periods of time corresponds to a type of rate segmentation and is provided a plurality of rate segments in each of which there are a plurality of rates. The step of performing the charging comprises steps of: searching for the highest priority in the charging strategy; searching for a corresponding period of time in the priority based upon the time a subscriber uses a service, and if found, performing the charging based upon the rate segments in the period of time; when the charging has been completed or the priorities have been searched through, and if there is any usage quantity that can't be charged, recording it and terminating the charging. With such a structure of general charging strategy, the present invention can satisfy various charging demands and provide generality and adequate expansibility. Also, the present invention enables subscribers to configure different charging methods as needed.
    • 本发明提供了一种适用于通信领域中的计费系统的通用计费方法,其特征在于包括基于计费策略建立计费策略和执行计费的步骤。 充电策略包括多个优先级,每个优先级包括多个时间段,并且时间段中的每个时间段对应于速率分段的类型,并且被提供多个速率段,每个速率段中有多个速率段 价格。 执行充电的步骤包括以下步骤:在充电策略中搜索最高优先级; 基于用户使用服务的时间,优先搜索相应的时间段,并且如果发现,则在该时间段内基于速率段执行计费; 当充电已经完成或已经搜索到优先级,并且如果存在不能充电的任何使用量,记录并终止充电。 通过这种一般充电策略的结构,本发明可以满足各种充电需求,并提供通用性和充分的可扩展性。 而且,本发明使订户能够根据需要配置不同的计费方法。
    • 74. 发明授权
    • Semiconductor device having optimized shallow junction geometries and method for fabrication thereof
    • 具有优化的浅结几何形状的半导体器件及其制造方法
    • US07033879B2
    • 2006-04-25
    • US10835121
    • 2004-04-29
    • Brian E. HornungXin ZhangLance S. RobertsonSrinivasan ChakravarthiBeriannan Chidambaram
    • Brian E. HornungXin ZhangLance S. RobertsonSrinivasan ChakravarthiBeriannan Chidambaram
    • H01L21/8238H01L21/336
    • H01L21/823814H01L21/823864
    • The present invention provides, in one embodiment, a method of fabricating a semiconductor device (100). The method comprises growing an oxide layer (120) on a gate structure (114) and a substrate (102) and implanting a dopant (124) into the substrate (102) and the oxide layer (120). Implantation is such that a portion of the dopant (124) remains in the oxide layer (120) to form an implanted oxide layer (126). The method further includes depositing a protective oxide layer (132) on the implanted oxide layer (126) and forming etch-resistant off-set spacers (134). The etch-resistant off-set spacers (134) are formed adjacent sidewalls of the gate structure (114) and on the protective oxide layer (132). The etch resistant off-set spacers having an inner perimeter (135) adjacent the sidewalls and an opposing outer perimeter (136). The method also comprises removing portions of the protective oxide layer (132) lying outside the outer perimeter (136) of the etch-resistant off-set spacers (134). Other embodiments of the present invention include a transistor device (200) and method of manufacturing an integrated circuit (300).
    • 本发明在一个实施例中提供一种制造半导体器件(100)的方法。 该方法包括在栅极结构(114)和衬底(102)上生长氧化物层(120)并将掺杂剂(124)注入到衬底(102)和氧化物层(120)中。 注入使得掺杂剂(124)的一部分保留在氧化物层(120)中以形成注入的氧化物层(126)。 该方法还包括在注入的氧化物层(126)上沉积保护性氧化物层(132)并且形成耐腐蚀的偏置间隔物(134)。 在栅极结构(114)的侧壁和保护氧化物层(132)上形成耐蚀刻偏置间隔物(134)。 耐腐蚀的偏置间隔件具有邻近侧壁的内周边(135)和相对的外周边(136)。 该方法还包括去除位于耐蚀刻偏移间隔物(134)的外周(136)外的保护氧化物层(132)的部分。 本发明的其他实施例包括晶体管器件(200)和制造集成电路(300)的方法。
    • 75. 发明授权
    • Elimination of void formation in aluminum based interconnect structures
    • 消除铝基互连结构中的空隙形成
    • US5946589A
    • 1999-08-31
    • US947884
    • 1997-10-09
    • Yat Meng NgXin Zhang
    • Yat Meng NgXin Zhang
    • H01L21/02H01L21/311H01L21/3213H01L21/441
    • H01L21/02071H01L21/31138
    • A process for forming aluminum based interconnect structures, with a reduced risk of void formation, occurring during photoresist removal and clean up procedures, has been developed. The process features removing the photoresist layer, used as a mask for patterning of an aluminum based layer, using a two phase, in situ photoresist removal procedure, followed by a cold water rinse. An aluminum oxide layer, formed during the initial phase of the two phase, in situ photoresist removal procedure, protects the sides of the aluminum based interconnect structure, during post-clean procedures, reducing the risk of galvanic corrosion and void formation. In addition the temperature of a DI water, post-clean procedure, has also been decreased to between about 5 to 10.degree. C., reduced, also reducing the risk of galvanic corrosion, that can occur during the post clean procedures.
    • 已经开发了一种用于形成铝基互连结构的方法,其在光致抗蚀剂去除和清洁过程中发生空隙形成的风险降低。 该方法的特征在于,使用两相原位光致抗蚀剂去除步骤,然后进行冷水冲洗,除去用作铝基层图案的掩模的光致抗蚀剂层。 在两相初始阶段形成的原位光致抗蚀剂去除工艺中的氧化铝层在后清洁过程中保护铝基互连结构的侧面,降低电偶腐蚀和空隙形成的风险。 此外,去离子水的温度,后清洁程序也降低到约5至10℃之间,减少,也降低了电镀腐蚀的风险,这可能在后清洗过程中发生。
    • 80. 发明申请
    • PROVIDING SUBSCIBER IDENTITY MODULE FUNCTION
    • 提供附件识别模块功能
    • US20140213321A1
    • 2014-07-31
    • US14240665
    • 2011-09-01
    • Canfeng ChenChangjiang ZhangJianying WenXuan GuoXin Zhang
    • Canfeng ChenChangjiang ZhangJianying WenXuan GuoXin Zhang
    • H04B1/38
    • H04W12/06H04B1/3816H04M1/72522H04W8/183H04W8/205
    • A host processing apparatus (100) and a user removable memory (40) are disclosed. The host processing apparatus (100) and the user removable memory (40) are, in use, connected to one another by respective connectors. The user removable memory (40) is provided in the form of a secure digital (SD) memory card with an expanded subscriber identity module (SIM) function. The host processing apparatus (100) is configured to convert SIM- related request signals to file access signals which identify a location or locations on the user removable memory (40) and one or more file access functions. The file access signals are transferred to the user removable memory (40) via the connectors. The user removable memory (40) comprises a flash memory (59), a SIM (42) programmed with data associated with a communications system, and interface means (52) for receiving the file access signals from the host processing apparatus (100), and configured to identify from the location(s) therein whether a memory or SIM function is to be applied. If the latter, the received file access function(s) are converted to SIM function(s) which are applied to the SIM (42) for transferring results back to the host processing apparatus (100).
    • 公开了主机处理设备(100)和用户可移动存储器(40)。 主机处理设备(100)和用户可移动存储器(40)在使用中通过相应的连接器相互连接。 用户可移动存储器(40)以具有扩展的用户识别模块(SIM)功能的安全数字(SD)存储卡的形式提供。 主机处理装置(100)被配置为将SIM相关的请求信号转换成识别用户可移动存储器(40)上的位置或位置的文件访问信号以及一个或多个文件访问功能。 文件访问信号通过连接器传送到用户可移动存储器(40)。 用户可移动存储器(40)包括闪存(59),用通信系统相关联的数据编程的SIM(42)和用于从主机处理设备(100)接收文件访问信号的接口装置(52) 并且被配置为从其中的位置识别是否应用存储器或SIM功能。 如果后者,所接收的文件访问功能被转换为应用于SIM(42)以将结果传回主机处理设备(100)的SIM功能。