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    • 71. 发明授权
    • Method for storing information in a semiconductor device
    • 用于在半导体器件中存储信息的结构和方法
    • US06190972B1
    • 2001-02-20
    • US08946027
    • 1997-10-07
    • Hua ZhengMichael ShoreJeffrey P. WrightTodd A. Merritt
    • Hua ZhengMichael ShoreJeffrey P. WrightTodd A. Merritt
    • H01L218246
    • G01R31/3181G11C17/10H01L27/112
    • A semiconductor device includes a plurality of conductive layers that are formed on the substrate. Two electrically intercoupled sections of a read-only storage element, such as a fuse element, which together compose the storage element, are each formed in a different one of the conductive layers. The storage element has a storage state, and each section has a conductivity. One can change the storage state of the storage element by changing the conductivity of one of the sections. Additionally, multiple storage elements may be coupled in parallel to form a storage module. Each of the storage elements of the storage module may include multiple storage sections that are each formed in a different conductive layer. The storage elements may store the version number of the mask set used to form the semiconductor device. Alternatively, a conductive layer is formed on a substrate, and one or more read-only storage elements are formed in the conductive layer. Each of the storage elements is formed in a predetermined state such that they collectively store a digital value that identifies a mask used to form the conductive layer.
    • 半导体器件包括形成在衬底上的多个导电层。 共同组成存储元件的只读存储元件(例如熔丝元件)的两个电互相耦合部分分别形成在不同的一个导电层中。 存储元件具有存储状态,并且每个部分具有导电性。 可以通过改变其中一个部分的电导率来改变存储元件的存储状态。 另外,多个存储元件可以并联耦合以形成存储模块。 存储模块的每个存储元件可以包括各自形成在不同导电层中的多个存储部分。 存储元件可以存储用于形成半导体器件的掩模集的版本号。 或者,在衬底上形成导电层,并且在导电层中形成一个或多个只读存储元件。 每个存储元件形成为预定状态,使得它们共同地存储识别用于形成导电层的掩模的数字值。
    • 72. 发明授权
    • Memory array datapath architecture
    • 内存阵列数据路径架构
    • US6157560A
    • 2000-12-05
    • US236509
    • 1999-01-25
    • Hua Zheng
    • Hua Zheng
    • G11C7/10G11C7/18G11C5/06
    • G11C7/18G11C7/1006
    • A datapath structure (for use in conjunction with at least one memory array) that includes N local data lines, N global data lines, M global I/O lines, and a datapath. Each memory array is partitioned into a number of segments, and each segment is associated with one or more bit lines. Each segment is further associated with at least one local data line. Each local data line couples to the bit lines associated with that particular local data line. The N global data lines operatively couple to the N local data lines. The datapath interconnects the N global data lines to the M global I/O lines in accordance with a set of control signals. The datapath includes M local I/O lines, M multiplexer circuits, and M interface circuits. The M interface circuits interconnect the M global I/O lines and the M local I/O lines. Each of the M multiplexer circuits interconnects the M local I/O lines to N/M of the N global data lines. In a specific implementation, M is eight and N is sixty-four.
    • 包括N个本地数据线,N个全局数据线,M个全局I / O线和数据路径的数据路径结构(用于至少一个存储器阵列)。 每个存储器阵列被分割成多个段,并且每个段与一个或多个位线相关联。 每个段还与至少一个本地数据线相关联。 每个本地数据线耦合到与该特定本地数据线相关联的位线。 N个全局数据线可操作地耦合到N个本地数据线。 数据路径根据一组控制信号将N个全局数据线互连到M个全局I / O线。 数据路径包括M个本地I / O线,M个多路复用器电路和M个接口电路。 M接口电路将M个全局I / O线和M个本地I / O线互连。 M个多路复用器电路中的每一个将M个本地I / O线互连到N个全局数据线的N / M。 在具体实现中,M为8,N为64。
    • 73. 发明授权
    • Distributed circuits to turn off word lines in a memory array
    • 分布式电路关闭存储器阵列中的字线
    • US6144610A
    • 2000-11-07
    • US294512
    • 1999-04-20
    • Hua ZhengKamin Fei
    • Hua ZhengKamin Fei
    • G11C8/08G11C11/408G11C7/00
    • G11C11/4085G11C8/08
    • A memory device that includes a row decoder, a set of word line, and one or more word line pull-down drivers. The row decoder includes decoding circuitry and a set of word line drivers. The decoding circuitry is configured to receive address information and generate a set of word line control signals. The word line drivers couple to the decoding circuitry and are responsive to the word line control signals. Each word line driver is configured to provide pull-up drive capability, and can further be configured to provide pull-down drive capability. Each word line couples to at least one word line driver. The word line pull-down driver(s) couples to the word lines, with each word line pull-down driver being configured to provide pull-down drive capability. One or more word line pull-down drivers can be distributed (i.e., uniformly) along the length of each word line. The word lines can also be implemented using a hierarchical word line architecture that includes a set of main word lines (i.e., fabricated on a metal layer) and a set of segmented word lines (i.e., fabricated on a polysilicon layer) coupled to each main word line.
    • 一种包括行解码器,一组字线以及一个或多个字线下拉驱动器的存储器件。 行解码器包括解码电路和一组字线驱动器。 解码电路被配置为接收地址信息并产生一组字线控制信号。 字线驱动器耦合到解码电路并且响应于字线控制信号。 每个字线驱动器被配置为提供上拉驱动能力,并且还可以被配置为提供下拉驱动能力。 每个字线耦合到至少一个字线驱动器。 字线下拉驱动器耦合到字线,每个字线下拉驱动器被配置为提供下拉驱动能力。 可以沿着每个字线的长度分布(即,均匀地)一个或多个字线下拉驱动器。 字线还可以使用包括一组主字线(即,在金属层上制造)和一组分段字线(即,在多晶硅层上制造的)的分层字线结构来实现,耦合到每个主线 字线。