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    • 72. 发明授权
    • Liquid crystal display and display
    • 液晶显示和显示
    • US08164717B2
    • 2012-04-24
    • US13279587
    • 2011-10-24
    • Koichi Fukuda
    • Koichi Fukuda
    • G02F1/1335
    • H01L27/124G02F1/1333G02F1/133305G02F1/133308G02F1/133528G02F1/133536G02F1/133608G02F1/1339G02F1/1368G02F2201/50
    • A liquid crystal display includes a liquid crystal display panel having a first substrate, a second substrate disposed on an observer side with respect to the first substrate and opposed to the first substrate, a liquid crystal held between the first substrate and the second substrate, an upper polarizing plate disposed on the observer side with respect to the second substrate, and a resin film disposed on the observer side with respect to the upper polarizing plate and affixed in contact with the upper polarizing plate. The resin film is higher in surface hardness than the upper polarizing plate and has a surface hardness of at least 3H in terms of surface pencil hardness. At least one of the first and second substrates has a thickness of no greater than 0.5 mm, and a total thickness of the liquid crystal display panel is no greater than 2 mm.
    • 液晶显示器包括液晶显示面板,其具有第一基板,相对于第一基板设置在观察者侧并与第一基板相对的第二基板,保持在第一基板和第二基板之间的液晶, 相对于第二基板设置在观察者侧的上偏振片和相对于上偏振片设置在观察者侧并与上偏振片接触的树脂膜。 树脂膜的表面硬度高于上偏振片,表面硬度以表面铅笔硬度计至少为3H。 第一和第二基板中的至少一个具有不大于0.5mm的厚度,并且液晶显示面板的总厚度不大于2mm。
    • 73. 发明授权
    • Nonvolatile semiconductor memory device and method of manufacturing the same
    • 非易失性半导体存储器件及其制造方法
    • US08106445B2
    • 2012-01-31
    • US12564615
    • 2009-09-22
    • Koichi FukudaRieko TanakaTakumi Abe
    • Koichi FukudaRieko TanakaTakumi Abe
    • H01L27/115
    • H01L27/11531H01L27/105H01L27/11526H01L28/24
    • A nonvolatile semiconductor memory device comprises a memory cell configured to store data and a resistor element provided around the memory cell. The memory cell includes a charge storage layer provided above a substrate, a first semiconductor layer formed on a top surface of the charge storage layer via an insulating layer, and a first low resistive layer formed on a top surface of the first semiconductor layer and having resistance lower than that of the first semiconductor layer. The resistor element includes a second semiconductor layer formed on the same layer as the first semiconductor layer, and a second low resistive layer formed on the same layer as the first low resistive layer and on a top surface of the second semiconductor layer, having resistance lower than that of the second semiconductor layer.
    • 非易失性半导体存储器件包括被配置为存储数据的存储单元和设置在存储单元周围的电阻元件。 存储单元包括设置在基板上的电荷存储层,经由绝缘层形成在电荷存储层的顶表面上的第一半导体层和形成在第一半导体层的顶表面上的第一低电阻层,并且具有 电阻低于第一半导体层的电阻。 电阻元件包括形成在与第一半导体层相同的层上的第二半导体层,以及形成在与第一低电阻层相同的层上的第二低电阻层,以及形成在第二半导体层的顶表面上的第二低电阻层, 比第二半导体层的厚度大。
    • 75. 发明申请
    • ORGANIC LIGHT-EMITTING DEVICE
    • 有机发光装置
    • US20110031515A1
    • 2011-02-10
    • US12909343
    • 2010-10-21
    • Nobutaka MizunoKoichi Fukuda
    • Nobutaka MizunoKoichi Fukuda
    • H01L51/50
    • H01L51/5265C09K11/06C09K2211/1011C09K2211/1014C09K2211/1029C09K2211/1033C09K2211/1037C09K2211/1088H01L27/3211H01L51/5234H01L2251/5315H01L2251/558H05B33/14H05B33/22
    • The organic light-emitting device of the present invention includes a plurality of organic light-emitting elements including an organic light-emitting element showing a first emission color and at least one organic light-emitting element showing a different emission color from the first emission color, each of the organic light-emitting elements including: a first electrode having a reflective surface; a second electrode placed on a light extraction side and including a semi-transparent layer; an organic compound layer including a light-emitting layer and formed between the first electrode and the second electrode; and a micro cavity structure for resonating light emitted from the light-emitting layer between the reflective surface and the semi-transparent layer, wherein the semi-transparent layer in the organic light-emitting element showing the first emission color is different in thickness and/or material from the semi-transparent layer in the at least one organic light-emitting element showing the different emission colors.
    • 本发明的有机发光元件具有多个有机发光元件,其具有显示第一发光颜色的有机发光元件和表示与第一发光颜色不同的发光颜色的至少一个有机发光元件 每个有机发光元件包括:具有反射表面的第一电极; 放置在光提取侧并包括半透明层的第二电极; 包含发光层并形成在第一电极和第二电极之间的有机化合物层; 以及用于使从所述反射表面和所述半透明层之间的发光层发射的光谐振的微腔结构,其中所述表现出第一发光颜色的有机发光元件中的半透明层的厚度和/ 或来自显示不同发射颜色的至少一个有机发光元件中的半透明层的材料。
    • 76. 发明授权
    • Light-emitting apparatus having periodic structure and sandwiched optical waveguide
    • 具有周期性结构的发光装置和夹持的光波导
    • US07868542B2
    • 2011-01-11
    • US12028107
    • 2008-02-08
    • Koichi Fukuda
    • Koichi Fukuda
    • H05B33/02H05B33/00H01L33/00
    • H01L51/5262H01L27/3246H01L33/44H01L33/54H01L51/0081H01L51/0085H01L51/5265H01L51/5268H01L2251/5315
    • Provided is a light-emitting apparatus which can improve the light extraction efficiency without adversely influencing a functional layer of a light-emitting device and which includes a substrate; a light-emitting device formed on the substrate, the light-emitting device including: a first electrode formed on the substrate; an insulating member covering a periphery of the first electrode; and a functional layer formed on an exposed portion of the first electrode and including an emission layer; and a second electrode formed on the functional layer and the insulating member, in which a periodic structure is formed on a surface of the insulating member opposite to a substrate side, and an optical waveguide is formed between a bottom portion of the periodic structure and the first electrode or between the bottom portion of the periodic structure and the substrate.
    • 提供一种可以提高光提取效率而不会不利地影响发光装置的功能层并且包括基板的发光装置; 形成在所述基板上的发光装置,所述发光装置包括:形成在所述基板上的第一电极; 覆盖所述第一电极的周边的绝缘构件; 以及形成在所述第一电极的暴露部分上并且包括发射层的功能层; 以及形成在功能层和绝缘构件上的第二电极,其中在绝缘构件的与衬底侧相对的表面上形成周期性结构,并且在周期结构的底部和 第一电极或在周期性结构的底部和基板之间。
    • 77. 发明申请
    • NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 非易失性半导体存储器件及其制造方法
    • US20100084702A1
    • 2010-04-08
    • US12564615
    • 2009-09-22
    • Koichi FukudaRieko TanakaTakumi Abe
    • Koichi FukudaRieko TanakaTakumi Abe
    • H01L27/115H01L21/8246
    • H01L27/11531H01L27/105H01L27/11526H01L28/24
    • A nonvolatile semiconductor memory device comprises a memory cell configured to store data and a resistor element provided around the memory cell. The memory cell includes a charge storage layer provided above a substrate, a first semiconductor layer formed on a top surface of the charge storage layer via an insulating layer, and a first low resistive layer formed on a top surface of the first semiconductor layer and having resistance lower than that of the first semiconductor layer. The resistor element includes a second semiconductor layer formed on the same layer as the first semiconductor layer, and a second low resistive layer formed on the same layer as the first low resistive layer and on a top surface of the second semiconductor layer, having resistance lower than that of the second semiconductor layer. The second semiconductor layer is formed to extend in a first direction parallel to the substrate. The second low resistive layer is formed at both ends of the second semiconductor layer in the first direction.
    • 非易失性半导体存储器件包括被配置为存储数据的存储单元和设置在存储单元周围的电阻元件。 存储单元包括设置在基板上的电荷存储层,经由绝缘层形成在电荷存储层的顶表面上的第一半导体层和形成在第一半导体层的顶表面上的第一低电阻层,并且具有 电阻低于第一半导体层的电阻。 电阻元件包括形成在与第一半导体层相同的层上的第二半导体层,以及形成在与第一低电阻层相同的层上的第二低电阻层,以及形成在第二半导体层的顶表面上的第二低电阻层, 比第二半导体层的厚度大。 第二半导体层形成为在与基板平行的第一方向上延伸。 第二低电阻层在第一方向上形成在第二半导体层的两端。
    • 79. 发明授权
    • Nand-structured flash memory
    • Nand结构闪存
    • US07630261B2
    • 2009-12-08
    • US11770252
    • 2007-06-28
    • Takumi AbeHiroshi MaejimaKoichi FukudaTakahiko Hara
    • Takumi AbeHiroshi MaejimaKoichi FukudaTakahiko Hara
    • G11C7/02
    • G11C11/5621G11C16/0483G11C2211/5641
    • A NAND-structured flash memory including a selection transistor having a first conducting path, one end of the first conducting path being connected to a bit line or a source line, at least one dummy gate having a second conducting path and a control gate, one end of the second conducting path being connected to the other end of the first conducting path of the selection transistor, a nonvolatile memory linked unit for storing external data, which includes a plurality of electrically erasable/writable nonvolatile memory cells having third conducting paths and control gates, the third conducting paths being connected in series, one end of the series of the third conducting paths being connected to the other end of the second conducting path of the dummy gate, a dummy gate driving circuit controlling a potential of the control gate of the dummy gate, and a memory cell driving circuit selectively driving the control gates of the plurality of nonvolatile memory cells to write, read or erase bit data for storing the external data.
    • 一种NAND结构的闪速存储器,包括具有第一导电路径的选择晶体管,第一导电路径的一端连接到位线或源极线,至少一个具有第二导电路径和控制栅极的虚拟栅极,一个 第二导电路径的端部连接到选择晶体管的第一导电路径的另一端,用于存储外部数据的非易失性存储器链接单元,其包括具有第三导电路径和控制的多个电可擦除/可写非易失性存储单元 所述第三导电路径串联连接,所述第三导电路径的一端与所述虚拟栅极的所述第二导电路径的另一端连接,所述虚拟栅极驱动电路控制所述控制栅极的电位 所述虚拟栅极和存储单元驱动电路选择性地驱动所述多个非易失性存储单元的控制栅极进行写入,读取或者错误 e位用于存储外部数据的数据。
    • 80. 发明申请
    • Liquid Crystal Display and Display
    • 液晶显示和显示
    • US20090213306A1
    • 2009-08-27
    • US12437218
    • 2009-05-07
    • Koichi Fukuda
    • Koichi Fukuda
    • G02F1/1335G02F1/1333
    • H01L27/124G02F1/1333G02F1/133305G02F1/133308G02F1/133528G02F1/133536G02F1/133608G02F1/1339G02F1/1368G02F2201/50
    • A liquid crystal display includes a liquid crystal display panel having a first substrate, a second substrate disposed on an observer side with respect to the first substrate and opposed to the first substrate, a liquid crystal held between the first substrate and the second substrate, an upper polarizing plate disposed on the observer side with respect to the second substrate, and a resin film disposed on the observer side with respect to the upper polarizing plate and affixed in contact with the upper polarizing plate. The resin film is higher in surface hardness than the upper polarizing plate and has a surface hardness of at least 3H in terms of surface pencil hardness. Each of the first and second substrates have a thickness of no greater than 0.5 mm, and a total thickness of the liquid crystal display panel is no greater than 2 mm.
    • 液晶显示器包括液晶显示面板,其具有第一基板,相对于第一基板设置在观察者侧并与第一基板相对的第二基板,保持在第一基板和第二基板之间的液晶, 相对于第二基板设置在观察者侧的上偏振片和相对于上偏振片设置在观察者侧并与上偏振片接触的树脂膜。 树脂膜的表面硬度高于上偏振片,表面硬度以表面铅笔硬度计至少为3H。 第一基板和第二基板中的每一个具有不大于0.5mm的厚度,并且液晶显示面板的总厚度不大于2mm。