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71. 发明申请

US20060125352A1 Method of manufacturing ceramic film and structure including ceramic film 有权
公开(公告)号：US20060125352A1
公开(公告)日：2006-06-15
申请号：US11294541
申请日：2005-12-06
申请人： Yukio Sakashita , Takamichi Fujii
发明人： Yukio Sakashita , Takamichi Fujii
IPC分类号： H01L41/18 , C23C16/00
CPC分类号： C23C24/04 , H01L41/1876 , H01L41/314
摘要： A method of manufacturing a ceramic film by using an AD method, by which a film having good crystallinity can be fabricated without using a high-temperature process. The method of manufacturing a ceramic film by using an aerosol including the steps of: (a) dispersing ceramic raw material powder containing an amorphous component in a gas to generate an aerosol; and (b) supplying the aerosol generated at step (a) into a chamber in which a substrate is placed and depositing the ceramic raw material powder on the substrate to form a ceramic film.

72. 发明申请

US20060091494A1 High-permittivity insulation film, thin film capacity element, thin film multilayer capacitor, and production method of thin film capacity element 有权
标题翻译：高介电常数绝缘膜，薄膜电容元件，薄膜多层电容器以及薄膜电容元件的制造方法
公开(公告)号：US20060091494A1
公开(公告)日：2006-05-04
申请号：US10546834
申请日：2004-02-24
申请人： Yuki Miyamoto , Yukio Sakashita
发明人： Yuki Miyamoto , Yukio Sakashita
IPC分类号： H01L29/00 , H01L21/00
CPC分类号： H01G4/1218 , C01G29/006 , C01P2006/40 , C04B35/475 , C04B2235/3213 , C04B2235/6585 , C04B2235/787 , H01G4/30 , H01L28/55 , Y10S438/957
摘要： A dielectric thin film 8, comprising a first bismuth layer-structured compound layer 8a expressed by a composition formula of (Bi2O2)2+(Am−1 Bm O3m+1)2− or Bi2 Am−1 Bm O3m+3, wherein “m” is a positive number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W. Between the first bismuth layer-structured compound layer 8a and a lower portion electrode 6, a second bismuth layer-structured compound layer 8b including bismuth in excess of that in the composition formula of said first bismuth layer-structured compound layer 8a.
摘要翻译：电介质薄膜8，其包含由（Bi 2 O 2 O 2）2 +的组成式表示的第一铋层结构化合物层8a，（A m-1-B）O 3 m + 1 + 2 - 或 - - - - （2）其中“m”是正数，“A”在...的位置选自Na，K，Pb，Ba，Sr，Ca和Bi中的至少一种元素，“B”是选自Fe，Co，Cr，Ga，Ti，Nb，Ta，Sb，V，Mo中的至少一种元素，在第一铋层结构化合物层8a和下部电极6之间，包含超过所述第一铋层结构化合物层8的组成式中的铋的第二铋层结构化合物层8b 一个。

73. 发明授权

US06930875B2 Multi-layered unit 有权
标题翻译：多层单位
公开(公告)号：US06930875B2
公开(公告)日：2005-08-16
申请号：US10460763
申请日：2003-06-12
申请人： Yukio Sakashita
发明人： Yukio Sakashita
IPC分类号： H01G4/10 , H01L21/02 , H01L21/316 , H01G4/228
CPC分类号： H01G4/10 , H01L21/02197 , H01L21/02293 , H01L21/31691 , H01L28/55 , H01L28/65
摘要： A multi-layered unit according to the present invention includes a support substrate formed of a material which has conductivity and on which a dielectric material containing a bismuth layer structured compound can be epitaxially grown, at least the surface thereof being oriented in the [001] direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the support substrate and formed of a dielectric material containing a bismuth layer structured compound oriented in the [001] direction. Since the thus constituted multi-layered unit includes the dielectric layer containing a bismuth layer structured compound oriented in the c axis direction, in the case of, for example, providing an upper electrode on the dielectric layer to form a thin film capacitor and applying a voltage between the electrode layer and the upper electrode, the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound contained in the dielectric layer. As a result, since the ferroelectric property of the bismuth layer structured compound contained in the dielectric layer can be suppressed and the paraelectric property thereof can be fully exhibited, it is possible to fabricate a thin film capacitor having a small size, large capacitance and an excellent dielectric characteristic.
摘要翻译：根据本发明的多层单元包括由具有导电性的材料形成的支撑衬底，并且其上可以外延生长含有铋层结构化合物的电介质材料，至少其表面取向为[001] 方向，以及通过在支撑基板上外延生长含有铋层结构化合物的电介质材料形成的电介质层，并由包含沿[001]方向取向的铋层结构化合物的电介质材料形成。由于如此构成的多层单元包括在c轴方向上包含铋层结构化合物的电介质层，例如在电介质层上设置上电极以形成薄膜电容器并施加电极层与上部电极之间的电压，电场方向基本上与包含在电介质层中的铋层结构化合物的c轴重合。结果，由于可以抑制包含在电介质层中的铋层结构化合物的铁电性能并且可以充分发挥其顺电特性，所以可以制造具有小尺寸，大电容的薄膜电容器和优良的介电特性。

74. 发明授权

US06891714B2 Multi-layered unit including electrode and dielectric layer 有权
标题翻译：多层单元包括电极和电介质层
公开(公告)号：US06891714B2
公开(公告)日：2005-05-10
申请号：US10375919
申请日：2003-02-26
申请人： Yukio Sakashita
发明人： Yukio Sakashita
IPC分类号： B32B15/00 , C01G29/00 , H01G4/005 , H01G4/12 , H01G4/228 , H01G4/30 , H01G4/33 , H01L27/01 , H01L27/04
CPC分类号： H01G4/33 , H01G4/005 , H01G4/228 , H01L27/016 , H01L28/56 , H01L28/65 , Y10T428/12493 , Y10T428/12535
摘要： A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed on the support substrate of silicon oxide, an electrode layer formed on the barrier layer of platinum, a buffer layer formed on the electrode layer of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12, having an excellent orientation characteristic and oriented in the c axis direction, and a dielectric layer formed on the buffer layer of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12, having an excellent capacitor characteristic and oriented in the c axis direction. Since the thus constituted multi-layered unit includes a dielectric layer containing a bismuth layer structured compound oriented in the c axis direction, in the case of, for example, providing an upper electrode on the dielectric layer, thereby fabricating a thin film capacitor and applying a voltage between the electrode layer and the upper electrode, the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound contained in the dielectric layer. As a result, since the ferroelectric property of the bismuth layer structured compound contained in the dielectric layer can be suppressed and the paraelectric property thereof can be fully exhibited, it is possible to fabricate a semiconductor device by incorporating a thin film capacitor having a small size, large capacitance and an excellent dielectric characteristic into the support substrate of a silicon single crystal together with other devices such as a field effect transistor, a CPU and the like.
摘要翻译：根据本发明的多层单元包括由硅单晶形成的支撑衬底，形成在氧化硅支撑衬底上的阻挡层，形成在铂阻挡层上的电极层，形成在该衬底上的缓冲层电介质材料的电极层，该电介质材料含有具有优良取向特性的由Bi 4 Si 3 N 12 O 12组成的铋层结构化合物并且在c轴方向上定向，并且形成在包含具有由Bi 4 Si 3 N 3表示的组成的铋层结构化合物的介电材料的缓冲层上的介电层，具有优异的电容器特性并且沿c轴方向取向。由于如此构成的多层单元包括在c轴方向上含有铋层结构化合物的电介质层，例如在电介质层上设置上电极的情况下，由此制造薄膜电容器并施加电极层和上部电极之间的电压，电场的方向基本上与包含在电介质层中的铋层结构化合物的c轴重合。结果，由于可以抑制包含在电介质层中的铋层结构化合物的铁电性能并且可以充分发挥其顺电特性，所以可以通过结合具有小尺寸的薄膜电容器来制造半导体器件与诸如场效应晶体管，CPU等的其它器件一起在硅单晶的支撑衬底中具有大的电容和优异的介电特性。

75. 发明授权

US06788522B1 Multi-layered unit including electrode and dielectric layer 有权
标题翻译：多层单元包括电极和电介质层
公开(公告)号：US06788522B1
公开(公告)日：2004-09-07
申请号：US10375924
申请日：2003-02-26
申请人： Yukio Sakashita
发明人： Yukio Sakashita
IPC分类号： H01G432
CPC分类号： H01G4/008 , H01G4/1218 , H01G4/33 , H01L23/5223 , H01L27/016 , H01L27/0688 , H01L28/55 , H01L28/60 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, a buffer layer formed on the support substrate and formed of a dielectric material containing a bismuth layer structured compound oriented in the c axis direction, an electrode layer formed by epitaxially growing crystals of a conductive material on the buffer layer and oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the electrode layer and oriented in the c axis direction. Since the thus constituted multi-layered unit includes the dielectric layer containing the bismuth layer structured compound oriented in the c axis direction, in the case of, for example, providing an upper electrode on the dielectric layer to form a thin film capacitor and applying a voltage between the electrode layer and the upper electrode, the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound contained in the dielectric layer. As a result, since the ferroelectric property of the bismuth layer structured compound contained in the dielectric layer can be suppressed and the paraelectric property thereof can be fully exhibited, it is possible to fabricate a thin film capacitor having a small size and large capacitance.
摘要翻译：根据本发明的多层单元包括由熔融石英形成的支撑基板，形成在支撑基板上并由包含在c轴方向上取向的铋层结构化合物的电介质材料形成的缓冲层，形成的电极层通过在缓冲层上外延生长导电材料的晶体并沿c轴方向定向，并且通过在电极层上外延生长含有铋层结构化合物的介电材料并沿c轴方向取向而形成的电介质层。由于如此构成的多层单元包括在c轴方向上包含铋层结构化合物的电介质层，所以在例如在电介质层上设置上电极以形成薄膜电容器并施加电极层与上部电极之间的电压，电场方向基本上与包含在电介质层中的铋层结构化合物的c轴重合。结果，由于可以抑制包含在电介质层中的铋层结构化合物的铁电性能并且可以充分发挥其顺电特性，所以可以制造具有小尺寸和大电容的薄膜电容器。

76. 发明授权

US5479822A Casing for a vibratory gyroscope 失效
标题翻译：外壳用于振动陀螺仪
公开(公告)号：US5479822A
公开(公告)日：1996-01-02
申请号：US135332
申请日：1993-10-13
申请人： Shozo Motohashi , Katsumi Fujimoto , Hiroshi Nishiyama , Yoshiaki Heinouchi , Kazuhiro Yoshitani , Yukio Sakashita
发明人： Shozo Motohashi , Katsumi Fujimoto , Hiroshi Nishiyama , Yoshiaki Heinouchi , Kazuhiro Yoshitani , Yukio Sakashita
IPC分类号： G01C19/56 , G01C19/5663 , G01P15/08 , G01P1/02
CPC分类号： G01C19/5663
摘要： A vibratory gyroscope 10 includes a vibrator 12. The vibrator 12 includes a regular triangular prism-shaped vibrating body 14. On centers of the three side faces of the vibrating body 14, piezoelectric elements 16a, 16b and 16c are formed respectively. The vibrating body 14 is supported above a base plate 20 by supporting members. The vibrating body 14 vibrates vertically with no rotation. A case 22 is secured so as to cover the vibrating body 14. An upper portion 26 of the case 22 is so formed that its inner size in the direction of the width is shorter than a half-wave length of a sound wave of a vibrating frequency of the vibrating body 14.
摘要翻译：振动陀螺仪10包括振动器12.振动器12包括规则的三角形棱柱形振动体14.在振动体14的三个侧面的中心，形成压电元件16a，16b和16c。振动体14通过支撑构件支撑在基板20的上方。振动体14无旋转地垂直振动。固定壳体22以覆盖振动体14.壳体22的上部26被形成为使得其在宽度方向上的内部尺寸比振动的声波的半波长短振动体14的频率。

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