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71. 发明授权

US07968905B2 ZnO-containing semiconductor layer and ZnO-containing semiconductor light emitting device 有权
标题翻译：含ZnO半导体层和含ZnO半导体发光器件
公开(公告)号：US07968905B2
公开(公告)日：2011-06-28
申请号：US12165794
申请日：2008-07-01
申请人： Tomofumi Yamamuro , Michihiro Sano , Naochika Horio , Hiroyuki Kato , Akio Ogawa , Hiroshi Kotani
发明人： Tomofumi Yamamuro , Michihiro Sano , Naochika Horio , Hiroyuki Kato , Akio Ogawa , Hiroshi Kotani
IPC分类号： H01L29/20 , H01L33/00
CPC分类号： H01L33/285
摘要： A ZnO-containing semiconductor layer contains Se or S added to ZnO and has an emission peak wavelength of ultraviolet light and an emission peak wavelength of visual light. By combining the ZnO-containing semiconductor layer with phosphor or semiconductor which is excited by the emitted ultraviolet light and emits visual light, visual light at various wavelengths can be emitted.
摘要翻译：含ZnO的半导体层含有添加到ZnO中的Se或S，具有紫外光的发射峰值波长和视觉光的发射峰值波长。通过将含ZnO的半导体层与被发射的紫外线激发的荧光体或半导体结合并发射视觉光，可以发出各种波长的视觉光。

72. 发明授权

US07943927B2 ZnO based semiconductor light emitting device and its manufacture method 有权
标题翻译： ZnO基半导体发光器件及其制造方法
公开(公告)号：US07943927B2
公开(公告)日：2011-05-17
申请号：US12501764
申请日：2009-07-13
申请人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L33/00
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02403 , H01L21/02472 , H01L21/02554 , H01L21/02557 , H01L21/02609 , H01L21/02631 , H01L33/28
摘要： A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.
摘要翻译： ZnO基半导体发光器件包括：含有ZnO1-x1Sx1的第一半导体层; 形成在第一半导体层之上并含有ZnO1-x2Sx2的第二半导体层; 以及第三半导体层，其形成在所述第二半导体层的上方并且包含ZnO1-x3Sx3，其中所述第一半导体层的S组成x1，所述第二半导体层的S组成x2和所述第三半导体层的S组成x3被选择导带下端的第二半导体层的能量变得低于导带下端的第一和第三半导体层的能量的两者的能量，并且第二半导体层在上端的能量的价带变得高于在价带上端的第一和第三半导体层的能量的两个能量。

73. 发明授权

US07882627B2 Method of manufacturing a multilayer wiring board 失效
标题翻译：多层布线板的制造方法
公开(公告)号：US07882627B2
公开(公告)日：2011-02-08
申请号：US12007040
申请日：2008-01-04
申请人： Tetsuya Koyama , Tsuyoshi Kobayashi , Hiroyuki Kato , Yoshihiro Machida
发明人： Tetsuya Koyama , Tsuyoshi Kobayashi , Hiroyuki Kato , Yoshihiro Machida
IPC分类号： H01K3/00
CPC分类号： H05K3/4614 , H05K3/462 , H05K3/4647 , H05K2203/061 , H05K2203/0733 , H05K2203/1327 , H05K2203/1476 , Y10T29/49124 , Y10T29/49126 , Y10T29/49146 , Y10T29/49147 , Y10T29/49155 , Y10T29/4916 , Y10T29/49165
摘要： First, a unilayer wiring board is fabricated, which has wiring layers formed in desired shapes on both sides of an insulating base member; and a metal bump formed on the wiring layer on one side of the insulating base member. Then, a desired number of unilayer boards are prepared and stacked up. On that case, the board disposed in the uppermost layer is prepared without having a metal bump. The boards are positioned and stacked up in such a manner that a metal bump of one of adjacent boards is connected to a corresponding wiring layer of the other board. Thereafter, resin is filled into gaps between the stacked boards, and insulating layers are formed on both sides of a multilayer board obtained through the above steps, in such a manner as to cover the entire surface except pad areas defined at predetermined positions on the wiring layers.
摘要翻译：首先，制造单层布线板，其具有在绝缘基材的两侧形成为所需形状的布线层; 以及在所述绝缘基体的一侧上的所述布线层上形成的金属凸块。然后，准备并堆叠所需数量的单层板。在这种情况下，准备设置在最上层的板，而不具有金属凸块。这些板被定位和堆叠，使得相邻板中的一个的金属凸块连接到另一个板的对应的布线层。此后，将树脂填充到堆叠板之间的间隙中，并且在通过上述步骤获得的多层板的两侧上形成绝缘层，以覆盖除了布线上的预定位置限定的焊盘区域之外的整个表面层。

74. 发明申请

US20100303993A1 NOVEL SOYBEAN PROTEIN MATERIAL AND METHOD FOR PRODUCING THE SAME 审中-公开
标题翻译：新型大豆蛋白质材料及其生产方法
公开(公告)号：US20100303993A1
公开(公告)日：2010-12-02
申请号：US12810606
申请日：2008-12-24
申请人： Takayasu Motoyama , Hiroyuki Kato
发明人： Takayasu Motoyama , Hiroyuki Kato
IPC分类号： A23L2/00 , A23D9/00 , A23J1/00 , C07K14/415
CPC分类号： A23J3/16 , A23C11/08 , A23L2/66 , A23L9/24 , A23L11/07 , A23L29/10
摘要： Provided is a soybean protein material which shows high emulsion stability in the case where 30% by weight of sodium casein has been replaced with soybean protein. A sugar-containing soybean protein material is produced by mixing a soybean protein raw material with a reducing sugar and performing a heat treatment at a temperature higher than 100° C. and 170° C. or lower for 10 sec to 300 sec at pH 6.3 to 8.0, followed by a hydrolysis treatment. Further, a sugar-containing soybean protein material in which protein is contained in an amount of 80% by weight or more on a dry weight basis, the 0.22 M TCA solubility is 5% by weight or more, 180 μmol of more of sugar is bound per g of protein and the content of β-conglycinin in protein by the ELISA method is 35% or less, or a soybean protein material for a coffee whitener in which the 0.22 M TCA solubility is 15% by weight or more and 30% by weight or less, the protein solubility is 80% by weight or more, and the total content of β-conglycinin and glycinin by SDS-PAGE is 30% or less is used. By using these soybean protein materials having high emulsifiability, emulsions and foods and drinks can be obtained.
摘要翻译：本发明提供一种在用大豆蛋白替代30重量％的酪蛋白的情况下，显示高乳化稳定性的大豆蛋白质材料。通过将大豆蛋白原料与还原糖混合并在高于100℃和170℃或更低的温度下在pH6.3下进行10秒至300秒的热处理来制备含糖大豆蛋白材料至8.0，然后进行水解处理。此外，含有干重量为80重量％以上的蛋白质的含糖大豆蛋白质材料，0.22M TCA溶解度为5重量％以上，180μmol以上的糖为通过ELISA法测定每g蛋白质和蛋白质中的大豆球蛋白含量为35％以下，或者是0.22M TCA溶解度为15重量％以上且30重量％以下的咖啡增白剂的大豆蛋白材料重量百分比以下，蛋白质溶解度为80重量％以上，通过SDS-PAGE测定的大豆球蛋白和大豆球蛋白的总含量为30％以下。通过使用具有高乳化性的这些大豆蛋白材料，可以获得乳液和食品和饮料。

75. 发明授权

US07829207B2 Manufacture method for ZnO based compound semiconductor crystal and ZnO based compound semiconductor substrate 有权
标题翻译：基于ZnO的化合物半导体晶体和ZnO基化合物半导体衬底的制造方法
公开(公告)号：US07829207B2
公开(公告)日：2010-11-09
申请号：US12239739
申请日：2008-09-27
申请人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Whan Cho
发明人： Hiroyuki Kato , Michihiro Sano , Katsumi Maeda , Hiroshi Yoneyama , Takafumi Yao , Meoung Whan Cho
IPC分类号： B32B9/00 , B32B19/00 , C30B29/16 , C30B29/46
CPC分类号： C30B23/02 , C30B25/02 , C30B29/16 , H01L21/02403 , H01L21/0243 , H01L21/02433 , H01L21/02472 , H01L21/02554 , H01L21/02631 , H01L21/02658 , H01L21/02661 , Y10T428/265
摘要： A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
摘要翻译：一种制造质量好的ZnO类化合物半导体晶体的制造方法。制备ZnO衬底具有由沿着m轴方向逐步布置的（0001）面的多个台阶形成的主表面，主表面的包络相对于（0001）面倾斜约2度，或减。 ZnO基化合物半导体晶体在主表面上生长。

76. 发明授权

US07746497B2 System and method for data processing 失效
标题翻译：数据处理系统和方法
公开(公告)号：US07746497B2
公开(公告)日：2010-06-29
申请号：US11889916
申请日：2007-08-17
申请人： Yoshiko Suenaga , Kazuaki Kidokoro , Hiroyuki Kato , Akihiko Fujiwara
发明人： Yoshiko Suenaga , Kazuaki Kidokoro , Hiroyuki Kato , Akihiko Fujiwara
IPC分类号： G06F15/00 , G06F15/16
CPC分类号： G06F17/30011
摘要： In a data processing system in which data to be processed is managed as processing-object data, and the processing-object data is processed in response to a designation, there are provided: data management means for managing the processing-object data together with processing-object attribute information indicative of an attribute thereof; processing designation means for designating a processing with respect to the processing-object data through a dialog performed with the user; processing execution means for executing a processing of the processing-object data in response to a designation performed by the processing designation means; and first processing result forecasting means for executing, when the dialog is performed, a forecast on a result of the processing by comparing processing-subject attribute information, which indicates an attribute of a processing to be executed by the processing execution means, with the processing-object attribute information, and for outputting to the user forecast notification information in accordance with the result of the processing obtained through the forecast.
摘要翻译：在将要处理的数据作为处理对象数据进行管理的数据处理系统中，并且响应于指定对处理对象数据进行处理，提供：数据管理装置，用于管理处理对象数据以及处理 - 表示其属性的对象属性信息; 处理指定装置，用于通过与用户执行的对话来指定关于处理对象数据的处理; 处理执行装置，用于响应于由处理指定装置执行的指定，执行处理对象数据的处理; 以及第一处理结果预测装置，用于当执行对话时，通过将表示处理执行装置执行的处理的属性的处理对象属性信息与处理对象进行比较来执行对处理结果的预测 - 对象属性信息，并且根据通过预测获得的处理结果向用户输出预测通知信息。

77. 发明授权

US07718468B2 Manufacture method for ZnO-containing compound semiconductor layer 有权
标题翻译：含ZnO化合物半导体层的制造方法
公开(公告)号：US07718468B2
公开(公告)日：2010-05-18
申请号：US12194791
申请日：2008-08-20
申请人： Tomofumi Yamamuro , Michihiro Sano , Hiroyuki Kato , Akio Ogawa
发明人： Tomofumi Yamamuro , Michihiro Sano , Hiroyuki Kato , Akio Ogawa
IPC分类号： H01L21/00
CPC分类号： H01L21/0237 , H01L21/02403 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02661
摘要： A method includes (a) preparing a substrate, and (b) growing a ZnO-containing compound semiconductor layer above the substrate by supplying at the same time at least Zn and O as source gases and S as a surfactant.
摘要翻译：一种方法包括（a）制备衬底，以及（b）通过同时至少供给作为源气体的Zn和O以及S作为表面活性剂，生长在衬底上方的含ZnO化合物半导体层。

78. 发明授权

US07632065B2 Centrifugal pump and method of manufacturing the same 有权
标题翻译：离心泵及其制造方法
公开(公告)号：US07632065B2
公开(公告)日：2009-12-15
申请号：US11587359
申请日：2004-11-12
申请人： Junya Kawabata , Kikuichi Mori , Hiroyuki Kato
发明人： Junya Kawabata , Kikuichi Mori , Hiroyuki Kato
IPC分类号： F04D29/44
CPC分类号： F04D29/2222 , F04D29/4266 , Y10T29/49236 , Y10T29/49243
摘要： A centrifugal pump includes a diffuser section for decreasing a velocity of the fluid discharged from an impeller, a return vane for leading the fluid which has passed through the diffuser section to a discharge side, and a main plate to which the diffuser section and the return vane are fixed.
摘要翻译：离心泵包括用于降低从叶轮排出的流体的速度的扩散器部分，用于将已经通过扩散器部分的流体引导到排放侧的返回叶片，以及扩散器部分和返回部分的主板叶片固定。

79. 发明申请

US20090294758A1 ZnO-CONTAINING SEMICONDUCTOR LAYER, ITS MANUFACTURE METHOD, AND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：含ZnO的半导体层，其制造方法和半导体发光器件
公开(公告)号：US20090294758A1
公开(公告)日：2009-12-03
申请号：US12540772
申请日：2009-08-13
申请人： Akio OGAWA , Michihiro Sano , Hiroyuki Kato , Naochika Horio , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio OGAWA , Michihiro Sano , Hiroyuki Kato , Naochika Horio , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L33/00 , H01L29/22 , H01L21/36
CPC分类号： H01S5/347 , B82Y20/00 , H01L33/285
摘要： A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.
摘要翻译：掺有Se的含ZnO半导体层在视觉上具有发光峰值波长，并且具有与ZnO的带隙相当的带隙。

80. 发明申请

US20090272972A1 ZnO BASED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE METHOD 有权
标题翻译：基于ZnO的半导体发光器件及其制造方法
公开(公告)号：US20090272972A1
公开(公告)日：2009-11-05
申请号：US12501764
申请日：2009-07-13
申请人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
发明人： Akio Ogawa , Michihiro Sano , Hiroyuki Kato , Hiroshi Kotani , Tomofumi Yamamuro
IPC分类号： H01L33/00
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02403 , H01L21/02472 , H01L21/02554 , H01L21/02557 , H01L21/02609 , H01L21/02631 , H01L33/28
摘要： A ZnO based semiconductor light emitting device includes: a first semiconductor layer containing ZnO1-x1Sx1; a second semiconductor layer formed above the first semiconductor layer and containing ZnO1-x2Sx2; and a third semiconductor layer formed above the second semiconductor layer and containing ZnO1-x3Sx3, wherein an S composition x1 of the first semiconductor layer, an S composition x2 of the second semiconductor layer and an S composition x3 of the third semiconductor layer are so selected that an energy of the second semiconductor layer at the lower end of a conduction band becomes lower than both energies of the first and third semiconductor layers at the lower end of the conduction bands, and that an energy of the second semiconductor layer at the upper end of a valence band becomes higher than both energies of the first and third semiconductor layers at the upper end of the valence bands.
摘要翻译： ZnO基半导体发光器件包括：含有ZnO1-x1Sx1的第一半导体层; 形成在第一半导体层之上并含有ZnO1-x2Sx2的第二半导体层; 以及第三半导体层，其形成在所述第二半导体层的上方并且包含ZnO1-x3Sx3，其中所述第一半导体层的S组成x1，所述第二半导体层的S组成x2和所述第三半导体层的S组成x3被选择导带下端的第二半导体层的能量变得低于导带下端的第一和第三半导体层的能量的两者的能量，并且第二半导体层在上端的能量的价带变得高于在价带上端的第一和第三半导体层的能量的两个能量。

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