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    • 72. 发明授权
    • Semiconductor light emitting device and method for manufacturing the same
    • 半导体发光器件及其制造方法
    • US07476910B2
    • 2009-01-13
    • US11220637
    • 2005-09-08
    • Akira FujimotoKoji AsakawaKenichi Ohashi
    • Akira FujimotoKoji AsakawaKenichi Ohashi
    • H01L29/06
    • H01L33/22
    • In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.
    • 在半导体发光器件中,半导体发光元件具有在其上形成有多个凸起结构的光提取表面。 凸起结构各自具有构成折射率梯度结构的圆锥台面部分,构成衍射光栅结构的圆筒部分和构成折射率梯度结构的锥形部分。 台面部分,圆柱形部分和锥形部分从光提取表面依次排列。 凸结构之间的周期长于发射波长的1 /(外部介质的折射率+凸起结构的折射率)等于或小于发射波长。 圆筒部的圆当量平均直径为台面部的底部的圆当量平均直径的1/3〜9/10。