专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US06848961B2 Method and apparatus for manufacturing image displaying apparatus 失效
标题翻译：用于制造图像显示装置的方法和装置
公开(公告)号：US06848961B2
公开(公告)日：2005-02-01
申请号：US09809055
申请日：2001-03-16
申请人： Ichiro Nomura , Kohei Nakata , Tetsuya Kaneko , Toshihiko Miyazaki , Yasue Sato , Toshikazu Ohnishi
发明人： Ichiro Nomura , Kohei Nakata , Tetsuya Kaneko , Toshihiko Miyazaki , Yasue Sato , Toshikazu Ohnishi
IPC分类号： H01J1/30 , H01J9/02 , H01J9/38 , H01J9/40
CPC分类号： H01J9/385 , H01J9/027 , H01J9/38 , H01J31/127 , H01J2201/3165 , H01J2209/385 , H01J2329/941 , H01J2329/945
摘要： A method and an apparatus of manufacturing an image displaying apparatus having an electron source substrate and a phosphor substrate. The electron source substrate is provided with an electron emitting element formed by covering with a container and by applying a voltage to an electronic conductor on the substrate. While, the phosphor substrate is provided with a phosphor thereon. The substrates are subjected to a getter processing and to a seal bonding process under a vacuum condition through a processing chamber, to complete an image forming apparatus. An improvement resides in miniaturizing and simplifying operation, and in greater manufacture speed and mass production.
摘要翻译：一种制造具有电子源基板和荧光体基板的图像显示装置的方法和装置。电子源基板具有通过用容器覆盖而形成的电子发射元件，并且在荧光体基板上设置有荧光体的同时向基板上的电子导体施加电压。在真空条件下通过处理室对基板进行吸气处理和密封接合处理，以完成图像形成装置。改进在于小型化和简化操作，并且在更大的制造速度和批量生产中。

72. 发明授权

US09070531B2 X-ray generator tube having improved cooling container and X-ray imaging apparatus including the same 有权
标题翻译：具有改进的冷却容器的X射线发生器管和包括其的X射线成像装置
公开(公告)号：US09070531B2
公开(公告)日：2015-06-30
申请号：US14111512
申请日：2012-04-06
申请人： Kazuyuki Ueda , Miki Tamura , Yoshihiro Yanagisawa , Yasue Sato , Koji Yamazaki , Takao Ogura , Shuji Aoki , Ichiro Nomura
发明人： Kazuyuki Ueda , Miki Tamura , Yoshihiro Yanagisawa , Yasue Sato , Koji Yamazaki , Takao Ogura , Shuji Aoki , Ichiro Nomura
IPC分类号： H01J35/12 , H01J35/02 , H05G1/04 , H05G1/02 , H01J35/16 , A61B6/00
CPC分类号： H01J35/16 , A61B6/4488 , H01J35/12 , H01J2235/1287 , H01J2235/186 , H05G1/025 , H05G1/04
摘要： Provided is an X-ray generator comprising an X-ray tube including a cylindrical body; an electron source in the body; a target at an end of the X-ray tube facing the electron source, the target generating X-rays by irradiation with electrons; a container in which the X-ray tube is arranged; insulating liquid filled between the X-ray tube and the container; and a holding member holding the body of the X-ray tube in the container, with a channel for the insulating liquid around the X-ray tube. The distance between the holding member and the end face at the end of the body in the direction in which the electron source and the target face is twice or more as large as the minimum width of the channel that is in contact with the outer surface of the X-ray tube at the end face side with respect to the holding member. This allows heat in the target to be quickly radiated, thus allowing X-rays to be generated stably for a long time.
摘要翻译：本发明提供一种X射线发生器，其包括：包括圆柱体的X射线管; 身体中的电子源; 面向电子源的X射线管的端部的靶，靶通过电子照射而产生X射线; 设置有X射线管的容器; 填充在X射线管和容器之间的绝缘液体; 以及保持构件，其将X射线管的主体保持在容器中，具有用于X射线管周围的绝缘液体的通道。在电子源和目标面的方向上的本体的端部处的保持构件与端面之间的距离为与外表面接触的通道的最小宽度的两倍或更多相对于保持部件的端面侧的X射线管。这样可以快速地辐射靶内的热量，能够长时间稳定地生成X射线。

73. 发明申请

US20140192957A1 X-RAY GENERATION APPARATUS AND X-RAY RADIOGRAPHIC APPARATUS 有权
标题翻译： X射线发生装置和X射线摄影装置
公开(公告)号：US20140192957A1
公开(公告)日：2014-07-10
申请号：US14241817
申请日：2012-08-29
申请人： Miki Tamura , Tamayo Hiroki , Shigeki Matsutani , Takao Ogura , Kazuyuki Ueda , Yoshihiro Yanagisawa , Ichiro Nomura
发明人： Miki Tamura , Tamayo Hiroki , Shigeki Matsutani , Takao Ogura , Kazuyuki Ueda , Yoshihiro Yanagisawa , Ichiro Nomura
IPC分类号： H01J35/08 , G01N23/04 , H05G1/70
CPC分类号： H01J35/08 , G01N23/04 , H01J35/14 , H01J35/16 , H01J2235/087 , H01J2235/168 , H01J2235/186 , H05G1/70
摘要： In an X-ray generation apparatus of transmission type including an electron emission source, and a target generating an X-ray with collision of electrons emitted from the electron emission source against the target, the X-ray generation apparatus further includes a secondary X-ray generation portion generating an X-ray with collision of electrons reflected by the target against the secondary X-ray generation portion, and the secondary X-ray generation portion and the target are arranged such that the X-ray generated with the direct collision of the electrons against the target and the X-ray generated with the collision of the electrons reflected by the target against the secondary X-ray generation portion are both radiated to an outside. X-ray generation efficiency is increased by effectively utilizing the electrons reflected by the target.
摘要翻译：在包括电子发射源的透射型的X射线产生装置和产生与电子发射源相对的靶发生碰撞的X射线的靶上，X射线产生装置还包括二次X射线射线产生部分，产生与目标反射的电子相对于次X射线产生部分的碰撞的X射线，并且次X射线产生部分和靶部被布置成使得由直接碰撞产生的X射线靠着目标物的电子以及由靶子反射的二次X射线产生部分的碰撞产生的X射线都被辐射到外部。通过有效地利用目标反射的电子来提高X射线产生效率。

74. 发明申请

US20140177796A1 X-RAY TUBE 审中-公开
标题翻译： X射线管
公开(公告)号：US20140177796A1
公开(公告)日：2014-06-26
申请号：US14123878
申请日：2012-05-28
申请人： Yasue Sato , Takao Ogura , Kazuyuki Ueda , Shuji Aoki , Ichiro Nomura , Miki Tamura , Yoshihiro Yanagisawa , Koji Yamazaki
发明人： Yasue Sato , Takao Ogura , Kazuyuki Ueda , Shuji Aoki , Ichiro Nomura , Miki Tamura , Yoshihiro Yanagisawa , Koji Yamazaki
IPC分类号： H01J35/16 , G01N23/04
CPC分类号： H01J35/16 , G01N23/04 , H01J35/186 , H01J2235/166 , H01J2235/168
摘要： In an X-ray tube having an X-ray shielding member allowing an electron ray to pass through an electron passing hole toward a target, separately from the cathode-side opening of the electron passing hole, a gas exhaust path allowing communication between the inside and outside of the electron passing hole is provided so that gas molecules generated in the electron passing hole can be easily diffused out of the electron passing hole. The degradation of the cathode caused by accelerated collisions with the cathode, of cations generated by collisions of electrons with gas molecules generated in the electron passing hole by a desorption phenomenon due to electron ray irradiation to the target, is reduced.
摘要翻译：在具有允许电子通过电子通过孔朝向靶的X射线屏蔽构件的X射线管中，与电子通过孔的阴极侧开口分开地，允许内部并且设置在电子通过孔的外部，使得在电子通过孔中产生的气体分子可以容易地从电子通过孔扩散。通过与电子射线照射到靶的解吸现象在电子通过孔中产生的电子与气体分子的碰撞产生的阳离子与阴极的加速碰撞引起的阴极的劣化减少。

75. 发明申请

US20110235783A1 X-RAY GENERATING APPARATUS AND CONTROL METHOD THEREOF 失效
标题翻译： X射线发生装置及其控制方法
公开(公告)号：US20110235783A1
公开(公告)日：2011-09-29
申请号：US13043982
申请日：2011-03-09
申请人： Takao Ogura , Ichiro Nomura , Kazuyuki Ueda , Osamu Tsujii
发明人： Takao Ogura , Ichiro Nomura , Kazuyuki Ueda , Osamu Tsujii
IPC分类号： H05G1/32
CPC分类号： H05G1/32 , H01J35/08 , H01J35/16 , H01J2235/087 , H01J2235/166 , H05G1/30
摘要： An X-ray generating apparatus controls driving of an X-ray tube. The X-ray tube includes an electron source emitting electrons due to application of a voltage, a transmission-type target generating an X-ray due to collision of electrons emitted from the electron source, and a shield member disposed between the electron source and the transmission-type target, the shield member having an opening that electrons emitted from the electron source pass through, and blocking an X-ray that scatters toward the electron source. When generating the X-ray, application of a voltage to the transmission-type target is started, and emission of electrons from the electron source is caused after passage of a predetermined period indicating a time period from starting voltage application until the transmission-type target reaches a predetermined voltage. When stopping X-ray generation, application of the voltage to the transmission-type target is stopped after stopping the emission of electrons from the electron source.
摘要翻译： X射线发生装置控制X射线管的驱动。 X射线管包括由于施加电压而发射电子的电子源，由于从电子源发射的电子的碰撞而产生X射线的透射型靶以及设置在电子源与电子源之间的屏蔽部件透射型靶，具有从电子源发射的电子通过的开口的屏蔽构件，以及阻挡向电子源散射的X射线。当产生X射线时，开始向透射型靶标施加电压，并且在经过指示从启动电压施加到发射型靶标的时间段的预定周期之后引起来自电子源的电子发射达到预定电压。当停止X射线产生时，在停止从电子源发射电子之后停止向透射型靶施加电压。

76. 发明授权

US07656918B2 Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US07656918B2
公开(公告)日：2010-02-02
申请号：US11688275
申请日：2007-03-20
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura
IPC分类号： H01S3/16 , H01S3/04
CPC分类号： H01S5/327 , H01S5/3018 , H01S5/3216
摘要： A semiconductor laser having an n-cladding layer, an optical guide layer, an active layer, an optical guide layer, and a p-cladding layer above an InP substrate, in which the active layer has a layer constituted with Be-containing group II-VI compound semiconductor mixed crystals, and at least one of layers of the n-cladding layer, the optical guide layer, and the p-cladding layer has a layer constituted with elements identical with those of the Be-containing group II-VI compound semiconductor mixed crystals of the active layer, and the layer is constituted with a superlattice structure comprising, as a well layer, mixed crystals of a Be compositions with the fluctuation of the composition being within ±30% compared with the Be composition of the group II-VI compound semiconductor mixed crystals of the active layer, whereby the device characteristics of the semiconductor laser comprising the Be-containing group II-VI compound semiconductor matched with the InP substrate.
摘要翻译：一种在InP衬底上方具有n包层，导光层，有源层，导光层和p包覆层的半导体激光器，其中活性层具有由含Be的基团II构成的层 -VI化合物半导体混晶，并且n包层，导光层和p包层的层中的至少一层具有由与含Be的II-VI族化合物相同的元素构成的层活性层的半导体混合晶体，并且该层由超晶格结构构成，该超晶格结构包括与组II的Be组分相比，Be组分与组合物的波动在±30％以内的混合晶体作为阱层 -VI化合物半导体混合晶体，由此包括与InP衬底相匹配的含Be基团II-VI化合物半导体的半导体激光器的器件特性。

77. 发明申请

US20070051937A1 Optical semiconductor devices on InP substrate 有权
标题翻译： InP衬底上的光学半导体器件
公开(公告)号：US20070051937A1
公开(公告)日：2007-03-08
申请号：US11500292
申请日：2006-08-08
申请人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
发明人： Katsumi Kishino , Ichiro Nomura , Koshi Tamamura , Hitoshi Nakamura
IPC分类号： H01L29/06
CPC分类号： H01S5/347 , B82Y20/00 , H01L31/0296 , H01L31/035236 , H01L33/06 , H01L33/28 , H01S5/0218 , H01S2304/02
摘要： The present invention aims at providing a structure in which a high p-type carrier concentration of 1×1017 cm−3 or more is obtained in a material in which, although it shows normally p-type conductivity, a carrier concentration smaller than 1×1017 cm−3 is only obtained. Also, the present invention aims at providing highly reliable semiconductor element and device each of which has excellent characteristics such as light emitting characteristics and a long lifetime. Each specific layer, i.e., each ZnSe0.53Te0.47 layer (2ML) is inserted between host layers, i.e., Mg0.5Zn0.29Cd0.21Se layers (each having 10ML (atomic layer) thickness) each of which is lattice matched to an InP substrate. In this case, each specific layer in which a sufficient carrier concentration of 1×1018 cm−3 or more is obtained when a single layer is inserted at suitable intervals. As a result, a sufficient hole concentration of 1×1017 cm−3 or more is obtained in the overall crystal in a material in which a hole concentration smaller than 1×1017 cm−3 has been only conventionally obtained.
摘要翻译：本发明的目的在于提供一种结构，其中在其中显示出1×10 17 -3 -3以上的高p型载流子浓度的材料中获得通常是p型导电性，仅获得小于1×10 17 cm -3的载流子浓度。另外，本发明的目的在于提供高度可靠的半导体元件和器件，其各自具有优异的特性，例如发光特性和长寿命。每个特定层，即每个ZnSe 0.53 Te 0.47层（2ML）被插入到主体层之间，即Mg 0.5 Zn 2+ 每个都具有与InP衬底晶格匹配的Se层（每个具有10ML（原子层）厚度）。在这种情况下，当以适当的间隔插入单层时，获得其中足够的载流子浓度为1×10 18 cm -3以上的特定层。结果，在其中空穴浓度小于1×10 6Ω的材料中，在整个晶体中获得足够的空穴浓度为1×10 17 cm -3以上的空穴浓度。只有传统上获得了17厘米-3 -3。

78. 发明授权

US07045871B2 II-VI compound semiconductor crystal and photoelectric conversion device 有权
标题翻译： II-VI化合物半导体晶体和光电转换器件
公开(公告)号：US07045871B2
公开(公告)日：2006-05-16
申请号：US11115182
申请日：2005-04-27
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/272
CPC分类号： H01L33/28 , H01L31/0296
摘要： Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of the n-type contact layer, and to control the conductivity type in a relatively easy manner.Moreover, formation of a CdSe/ZnTe superlattice layer or a ZnCdSeTe-graded layer between the contact layer and an electrode can prevent electric resistance from being increased due to difference in the energy gaps. Since CdSe and ZnTe, composing the CdSe/ZnTe superlattice or ZnCdSeTe composition-graded layer, have relatively close lattice constants, formation thereof is less likely to adversely affect the crystallinity of the semiconductor crystal, which is advantageous in obtaining the semiconductor crystal with an excellent quality.
摘要翻译：由于ZnTe基化合物半导体晶体被设计成在ZnTe基化合物半导体层上具有n型接触层，该n型接触层包括彼此生长的具有n型CdSe和n型ZnTe的超晶格层，或者 ZnCdSeTe梯度层，可以提高n型接触层的载流子浓度，并以相对容易的方式控制导电类型。此外，在接触层和电极之间形成CdSe / ZnTe超晶格层或ZnCdSeTe梯度层可以防止由于能隙的差异而导致的电阻增加。由于构成CdSe / ZnTe超晶格或ZnCdSeTe组成梯度层的CdSe和ZnTe具有相对较近的晶格常数，所以其形成不太可能不利地影响半导体晶体的结晶度，这有利于获得具有优异的半导体晶体质量。

79. 发明申请

US20050189553A1 II-VI compound semiconductor crystal and photoelectric conversion device 有权
标题翻译： II-VI化合物半导体晶体和光电转换器件
公开(公告)号：US20050189553A1
公开(公告)日：2005-09-01
申请号：US11115182
申请日：2005-04-27
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/0296 , H01L33/06 , H01L33/28 , H01L33/40 , H01L29/22
CPC分类号： H01L33/28 , H01L31/0296
摘要： Since a ZnTe-base compound semiconductor crystal was designed so as to have, on a ZnTe-base compound semiconductor layer, an n-type contact layer which includes a superlattice layer having n-type CdSe and n-type ZnTe grown with each other or a ZnCdSeTe-graded layer, it was made possible to raise carrier concentration of the n-type contact layer, and to control the conductivity type in a relatively easy manner. Moreover, formation of a CdSe/ZnTe superlattice layer or a ZnCdSeTe-graded layer between the contact layer and an electrode can prevent electric resistance from being increased due to difference in the energy gaps. Since CdSe and ZnTe, composing the CdSe/ZnTe superlattice or ZnCdSeTe composition-graded layer, have relatively close lattice constants, formation thereof is less likely to adversely affect the crystallinity of the semiconductor crystal, which is advantageous in obtaining the semiconductor crystal with an excellent quality.
摘要翻译：由于ZnTe基化合物半导体晶体被设计成在ZnTe基化合物半导体层上具有n型接触层，该n型接触层包括彼此生长的具有n型CdSe和n型ZnTe的超晶格层，或者 ZnCdSeTe梯度层，可以提高n型接触层的载流子浓度，并以相对容易的方式控制导电类型。此外，在接触层和电极之间形成CdSe / ZnTe超晶格层或ZnCdSeTe梯度层可以防止由于能隙的差异而导致的电阻增加。由于构成CdSe / ZnTe超晶格或ZnCdSeTe组成梯度层的CdSe和ZnTe具有相对较近的晶格常数，所以其形成不太可能不利地影响半导体晶体的结晶度，这有利于获得具有优异的半导体晶体质量。

80. 发明授权

US06933519B2 II-VI compound semiconductor crystal 有权
标题翻译： II-VI化合物半导体晶体
公开(公告)号：US06933519B2
公开(公告)日：2005-08-23
申请号：US10381880
申请日：2002-08-02
申请人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
发明人： Katsumi Kishino , Ichiro Nomura , Song-Bek Che , Kenji Sato
IPC分类号： H01L31/0296 , H01L33/06 , H01L33/28 , H01L33/40 , H01L29/06
CPC分类号： H01L33/28 , H01L31/0296
摘要： The present invention relates to a II-VI compound semiconductor crystal comprising an n-type contact layer which includes a superlattice layer comprising n-type CdSe and n-type ZnTe stacked with each other, on a ZnTe-base compound semiconductor layer; a A II-VI compound semiconductor crystal comprising an n-type contact layer which includes an n-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varies, on a ZnTe-base compound semiconductor layer; a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a superlattice layer comprising p-type CdSe and p-type ZnTe stacked with each other, on a CdSe-base compound semiconductor layer; and a II-VI compound semiconductor crystal comprising a p-type contact layer which includes a p-type ZnCdSeTe composition-graded layer in which composition of Zn, Cd, Se and Te is gradually varied, on a CdSe-base compound semiconductor layer.
摘要翻译：本发明涉及包含n型接触层的II-VI族化合物半导体晶体，所述n型接触层包括在ZnTe基化合物半导体层上彼此堆叠的包含n型CdSe和n型ZnTe的超晶格层; 包括在ZnTe基化合物半导体层上包含Zn，Cd，Se和Te的组成逐渐变化的n型ZnCdSeTe组成梯度层的n型接触层的A II-VI化合物半导体晶体; 包括p型接触层的II-VI族化合物半导体晶体，其包含在CdSe基化合物半导体层上彼此堆叠的包含p型CdSe和p型ZnTe的超晶格层; 以及包含在CdSe基化合物半导体层上包含Zn，Cd，Se和Te的组成逐渐变化的p型ZnCdSeTe组成分级层的p型接触层的II-VI族化合物半导体晶体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式