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71. 发明授权

US07663116B2 Sensor and image pickup device 有权
标题翻译：传感器和图像拾取装置
公开(公告)号：US07663116B2
公开(公告)日：2010-02-16
申请号：US12368592
申请日：2009-02-10
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01T1/24
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
摘要翻译：一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。

72. 发明申请

US20080251729A1 SENSOR AND IMAGE PICKUP DEVICE 有权
公开(公告)号：US20080251729A1
公开(公告)日：2008-10-16
申请号：US11937259
申请日：2007-11-08
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： G01T1/24 , H01L29/04
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

73. 发明申请

US20060108529A1 Sensor and image pickup device 有权
公开(公告)号：US20060108529A1
公开(公告)日：2006-05-25
申请号：US11269648
申请日：2005-11-09
申请人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Keishi Saito , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L27/14
CPC分类号： H01L31/032 , H01L27/14601 , H01L27/14632 , H01L27/14658 , H01L29/7869 , H01L31/02322 , H01L31/085 , H01L31/09 , H01L31/118
摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

74. 发明申请

US20060099126A1 Sputtering target and process for producing the same 失效
标题翻译：溅射目标和生产方法
公开(公告)号：US20060099126A1
公开(公告)日：2006-05-11
申请号：US10547816
申请日：2004-02-03
申请人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
发明人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
IPC分类号： C01F17/00 , B22D7/00
CPC分类号： C04B35/645 , C04B35/547 , C04B2235/3227 , C04B2235/446 , C04B2235/5409 , C04B2235/5436 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C23C14/3414 , Y10T428/12
摘要： A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850° C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.
摘要翻译：一种溅射靶的制造方法，其特征在于，具有通过烧结选自构成元素的基本物质，氧化物或硫族化物的至少一种以上的粉末作为原料的含有含有La和Cu的氧化硫元素的溅射靶，其特征在于，包括：材料]在烧结工序中在850℃以下的温度下保持1小时以上，其中在反应工序后，将该材料在比反应步骤温度高的温度进行加压烧结。除了增加含有含有La和Cu的含氧硫属元素的P型透明导电材料靶的密度以外，能够以低的制造成本扩大靶，除此之外，可以消除靶中未反应物的存在，生产率可以通过抑制靶中的裂纹的产生而得到改善，也可以提高通过溅射形成的沉积物的质量。

75. 发明授权

US06611317B1 Exposure apparatus, semiconductor device, and photomask 失效
标题翻译：曝光装置，半导体装置和光掩模
公开(公告)号：US06611317B1
公开(公告)日：2003-08-26
申请号：US09701180
申请日：2001-02-16
申请人： Tohru Ogawa , Hideo Hosono , Shinya Kikugawa , Yoshiaki Ikuta , Akio Masui , Noriaki Shimodaira , Shuhei Yoshizawa
发明人： Tohru Ogawa , Hideo Hosono , Shinya Kikugawa , Yoshiaki Ikuta , Akio Masui , Noriaki Shimodaira , Shuhei Yoshizawa
IPC分类号： G03B2772
CPC分类号： G03F7/70058 , G03F7/70241 , G03F7/70958
摘要： An exposure apparatus, wherein at least one of optical members constituting an exposure light source system, an illuminating optical system, a photomask and a projection optical system, is made of a synthetic quartz glass for an optical member, which has an absorption coefficient of 0.70 cm−1 or less at a wavelength of 157 nm and an infrared absorption peak attributable to SiOH stretching vibration at about 3640 cm−1.
摘要翻译：一种曝光装置，其中构成曝光光源系统的光学部件，照明光学系统，光掩模和投影光学系统中的至少一个由用于光学部件的合成石英玻璃制成，其吸收系数为0.70 cm-1或更小，以及归因于约3640cm -1处的SiOH伸缩振动的红外吸收峰。

76. 发明授权

US06294274B1 Oxide thin film 有权
标题翻译：氧化物薄膜
公开(公告)号：US06294274B1
公开(公告)日：2001-09-25
申请号：US09350914
申请日：1999-07-12
申请人： Hiroshi Kawazoe , Hideo Hosono , Atsushi Kudo , Hiroshi Yanagi
发明人： Hiroshi Kawazoe , Hideo Hosono , Atsushi Kudo , Hiroshi Yanagi
IPC分类号： C01G302
CPC分类号： H01L33/26 , C03C17/23 , C03C2217/228 , C03C2217/23 , C23C14/087 , H01L51/5012 , Y10T428/26
摘要： An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and strontium oxide as a main component and exhibits p-type conductivity at a bandgap of at least 2 eV.
摘要翻译：本发明的目的是提供尽管迄今为止非常难以形成的具有宽带或透明性和p型导电性的氧化物薄膜。形成在基板上的氧化物薄膜含有氧化铜和氧化锶作为主要成分，并且在至少2eV的带隙处表现出p型导电性。

77. 发明授权

US08237166B2 Display 有权
标题翻译：显示
公开(公告)号：US08237166B2
公开(公告)日：2012-08-07
申请号：US12848671
申请日：2010-08-02
申请人： Hideya Kumomi , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Hideya Kumomi , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L31/20
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/14621 , H01L29/04
摘要： An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
摘要翻译：一种有源矩阵显示器，包括用于驱动光控制装置的光控制装置和场效应晶体管。场效应晶体管的有源层包括非晶体。

78. 发明授权

US07897068B2 Sputtering target, thin film for optical information recording medium and process for producing the same 有权
公开(公告)号：US07897068B2
公开(公告)日：2011-03-01
申请号：US12794129
申请日：2010-06-04
申请人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
发明人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
IPC分类号： H01B1/08 , B32B18/00
CPC分类号： C23C14/086 , C04B35/453 , C04B2235/3217 , C04B2235/3225 , C04B2235/3272 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/5436 , C04B2235/77 , C04B2235/775 , C23C14/3414 , G11B7/2531 , G11B7/2578 , G11B7/266 , G11B2007/25706 , G11B2007/25708 , G11B2007/2571 , G11B2007/25715 , Y02T50/67 , Y10T428/12
摘要： A sputtering target is provided that has a relative density of 80% or more and contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1

79. 发明申请

US20110024741A1 INTEGRATED CIRCUITS UTILIZING AMORPHOUS OXIDES 有权
标题翻译：集成电路利用非晶态氧化物
公开(公告)号：US20110024741A1
公开(公告)日：2011-02-03
申请号：US12882404
申请日：2010-09-15
申请人： Katsumi Abe , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Katsumi Abe , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L29/26
CPC分类号： H01L29/7869
摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
摘要翻译：提供了使用透明氧化膜的半导体器件和电路。具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

80. 发明申请

US20110017996A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110017996A1
公开(公告)日：2011-01-27
申请号：US12882628
申请日：2010-09-15
申请人： Tohru Den , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Tohru Den , Tatsuya Iwasaki , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L33/00
CPC分类号： H01L27/1225 , G03G5/08 , G03G5/144 , H01L27/1214 , H01L27/3248 , H01L27/3262 , H01L29/04 , H01L29/66969 , H01L29/78693 , H01L2251/5315
摘要： An Object of the Present Invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.
摘要翻译：本发明的目的是提供一种使用无定形氧化物的新的发光装置。发光器件具有存在于第一和第二电极之间的发光层和场效应晶体管，其中有源层是无定形的。

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