专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US4757214A Pulse generator circuit 失效
标题翻译：脉冲发生器电路
公开(公告)号：US4757214A
公开(公告)日：1988-07-12
申请号：US830799
申请日：1986-02-19
申请人： Yasuo Kobayashi
发明人： Yasuo Kobayashi
IPC分类号： H03K5/04 , H03K5/1532 , H03K5/1534 , H03K3/017 , H03K5/13 , H03K19/20
CPC分类号： H03K5/1534
摘要： A pulse generator circuit includes (a) a delay circuit responsive to an input signal for producing an output signal after a predetermined delay time, (b) a first logic circuit responsive to the input signal and this output signal for producing an output signal having a first logic state when both of the input signal and the output signal from the delay circuit are concurrently of a second logic value, (c) a second logic circuit responsive to the input signal and the output signal from the delay circuit for producing an output signal having the first logic state when both the input signal and the output signal from the delay circuit are of the first logic value, and (d) a third logic circuit responsive to the output signal from the first logic circuit and to the output signal from the second logic circuit for producing an output signal having a first logic state when both of the output signal from the first logic circuit and the output signal from the second logic circuit are concurrently of the second logic value.
摘要翻译：脉冲发生器电路包括：（a）响应于输入信号的延迟电路，用于在预定延迟时间之后产生输出信号;（b）响应于输入信号的第一逻辑电路，该输出信号用于产生具有第一逻辑状态，当输入信号和来自延迟电路的输出信号都同时为第二逻辑值时，（c）第二逻辑电路响应于输入信号和来自延迟电路的输出信号产生输出信号具有第一逻辑状态，当输入信号和来自延迟电路的输出信号都是第一逻辑值时，以及（d）第三逻辑电路响应于来自第一逻辑电路的输出信号和来自第一逻辑值的输出信号第二逻辑电路，用于当来自第一逻辑电路的输出信号和来自第二逻辑电路的输出信号都同时产生具有第一逻辑状态的输出信号时第二个逻辑值。

72. 发明授权

US4723270A Traffic data collecting arrangement comprising a template data memory in each exchange 失效
标题翻译：交通数据采集装置，包括每个交换中的模板数据存储器
公开(公告)号：US4723270A
公开(公告)日：1988-02-02
申请号：US929289
申请日：1986-11-12
申请人： Michio Okamoto , Atsushi Tsuchihashi , Yasuo Kobayashi
发明人： Michio Okamoto , Atsushi Tsuchihashi , Yasuo Kobayashi
IPC分类号： H04M3/36
CPC分类号： H04M3/36
摘要： In each exchange (12) of a communication network, a template data memory (31) keeps "exchange" template data according to which traffic data should be monitored at the exchange. In a center (11) of the network, a template data file (33) keeps copies of the template data of the respective exchanges of the network as "center" template data. When a change in the exchange template data is transmitted from a "change" originating exchange to the center, a central processor (13) updates the center template data accordingly for the originating exchange. Traffic data are transmitted from the respective exchanges to the center without the exchange template data. When such a traffic datum is transmitted from a "data" originating exchange to the center, the central processor stores the traffic datum in a traffic data log file (17) according to the template data kept in the template data file for the data originating exchange. Preferably, the center comprises a table (32) for keeping a code upon completion of renewal of the center template data for the change originating exchange until the center template data are again updated for the exchange in question. With reference to the code, the central processor loads the traffic data log file with the traffic data transmitted from the change originating exchange which is the data originating exchange in this event.
摘要翻译：在通信网络的每个交换机（12）中，模板数据存储器（31）根据交换机上应该监视哪个业务数据来保持“交换”模板数据。在网络的中心（11）中，模板数据文件（33）将网络的各交换机的模板数据的副本保存为“中心”模板数据。当交换模板数据的变化从“更改”始发交换发送到中心时，中央处理器（13）相应地为发端交换机更新中心模板数据。业务数据从相应的交换机发送到中心，而没有交换模板数据。当这样的业务数据从“数据”发起交换机发送到中心时，中央处理器根据保存在用于数据发起交换机的模板数据文件中的模板数据将业务数据存储在业务数据日志文件（17）中。优选地，中心包括用于在修改始发交换机的中心模板数据的更新完成之后保持代码的表（32），直到中心模板数据被再次更新以用于所讨论的交换机。参考该代码，中央处理器将交通数据日志文件与在此事件中作为数据发起交换机的更改发起交换机传输的流量数据进行加载。

73. 发明授权

US4699673A Method of manufacturing aluminum alloy sheets excellent in hot formability 失效
标题翻译：制造热成型性优异的铝合金板的方法
公开(公告)号：US4699673A
公开(公告)日：1987-10-13
申请号：US748684
申请日：1985-06-25
申请人： Yasuo Kobayashi , Michihiro Yoda , Hiromi Goto , Yo Takeuchi
发明人： Yasuo Kobayashi , Michihiro Yoda , Hiromi Goto , Yo Takeuchi
IPC分类号： B21B3/00 , C22F1/00 , C22F1/04
CPC分类号： C22F1/04
摘要： A method of manufacturing an aluminum alloy sheet excellent in hot formability. A hot rolled plate of an aluminum alloy is cold rolled into a cold rolled sheet with a reduction ratio of at least 20%. The cold rolled sheet thus obtained is subjected to intermediate heat treatment wherein it is heated to a temperature of 420.degree. to 560.degree. C., at a heating rate of at least 2.degree. C. per second while it is heated from 150.degree. to 350.degree. C., and the sheet is then cooled to room temperature, at a cooling rate of at least 1.degree. C. per second while it is cooled from 420.degree. to 150.degree. C. The resulting heat treated sheet is subjected to final cold rolling with a reduction ratio of 15 to 60%.
摘要翻译：一种制造热成型性优异的铝合金板的方法。将铝合金的热轧板冷轧成冷轧板，压下率至少为20％。将由此获得的冷轧板进行中间热处理，其中以每秒至少2℃的加热速率将其加热至420至560℃的温度，同时将其从150℃加热至350℃ 然后将该片材冷却至室温，以420℃至150℃冷却至少1℃的冷却速率。将所得的热处理片材进行最终冷轧减速比为15〜60％。

74. 发明授权

US4275093A Method of manufacturing insulated gate semiconductor devices by high pressure thermal oxidation with water vapor 失效
标题翻译：用水蒸气高压热氧化制造绝缘栅半导体器件的方法
公开(公告)号：US4275093A
公开(公告)日：1981-06-23
申请号：US048069
申请日：1979-06-13
申请人： Nobuo Sasaki , Yasuo Kobayashi , Ryoiku Tohgei , Takashi Iwai , Motoo Nakano
发明人： Nobuo Sasaki , Yasuo Kobayashi , Ryoiku Tohgei , Takashi Iwai , Motoo Nakano
IPC分类号： H01L27/12 , H01L21/316 , H01L21/762 , H01L21/86 , H01L29/78
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/76264 , H01L21/76281 , Y10S438/909
摘要： A method of manufacturing SOS type semiconductor devices having small leakage current comprising the steps of forming a single crystal semiconductor film on an insulator single crystal substrate, selectively forming a film for masking against oxidation on the surface of the single crystal semiconductor film, and thermally oxidizing the single crystal semiconductor film, in a region which is not covered with the masking film, down to the surface of the insulating single crystal substrate in a water vapor atmosphere having a high pressure which is at least more than atmospheric pressure.
摘要翻译：一种制造具有小的漏电流的SOS型半导体器件的方法，包括以下步骤：在绝缘体单晶衬底上形成单晶半导体膜，在单晶半导体膜的表面上选择性地形成用于掩蔽抗氧化的膜，以及热氧化在没有被掩模膜覆盖的区域中的单晶半导体膜在具有至少大于大气压的高压的水蒸汽气氛中向下到达绝缘单晶基板的表面。

75. 发明授权

US4262340A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4262340A
公开(公告)日：1981-04-14
申请号：US92858
申请日：1979-11-09
申请人： Nobuo Sasaki , Yasuo Kobayashi , Takashi Iwai , Motoo Nakano
发明人： Nobuo Sasaki , Yasuo Kobayashi , Takashi Iwai , Motoo Nakano
IPC分类号： G11C11/41 , G11C5/06 , G11C8/08 , G11C11/408 , G11C11/412 , G11C11/418 , H01L27/11 , G11C11/40
CPC分类号： G11C11/418 , G11C11/4085 , G11C11/412 , G11C5/063 , G11C8/08 , H01L27/1104 , H01L27/1108
摘要： A semiconductor memory device provides a plurality of bit lines, a plurality of memory cells each of which is connected to a pair of different bit lines, a plurality of common word wires each of which is connected to the memory cells via a transmission gate. A characteristic feature of the present invention is to provide at least one amplifier between two memory cells which are connected to a word line or a bit line so as to prevent an increase of the access time of the memory device.
摘要翻译：半导体存储器件提供多个位线，多个存储单元，每个存储单元都连接到一对不同的位线，多个公共字线，每个通常的字线经由传输门连接到存储单元。本发明的特征在于提供连接到字线或位线的两个存储单元之间的至少一个放大器，以防止存储器件的访问时间的增加。

76. 发明授权

US4250569A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4250569A
公开(公告)日：1981-02-10
申请号：US960917
申请日：1978-11-15
申请人： Nobuo Sasaki , Moto'o Nakano , Yasuo Kobayashi , Takashi Iwai
发明人： Nobuo Sasaki , Moto'o Nakano , Yasuo Kobayashi , Takashi Iwai
IPC分类号： H01L27/108 , G11C11/40
CPC分类号： H01L27/108
摘要： Disclosed is a semiconductor memory device using semiconductor memory elements as memory cells. Each semiconductor memory element is provided with a semiconductor region having a particular conductivity type, a source region and a drain region both having opposite conductivity type and both being located adjacent to the semiconductor region, one on each side of the semiconductor region, so that the semiconductor region functions as a separator between the source region and the drain region, and a gate electrode which is provided over the surface of the semiconductor region on a dielectric insulation film. In the semiconductor memory device, information is written in the semiconductor memory element by injecting electric charges into the semiconductor region, and the written information is read by detecting a variation of the electrical conductance on the surface of the semiconductor region due to the injection of electric charges.
摘要翻译：公开了使用半导体存储元件作为存储单元的半导体存储器件。每个半导体存储元件设置有具有特定导电类型的半导体区域，源极区域和漏极区域，其具有相反的导电类型并且都位于与半导体区域相邻的位置，在半导体区域的每一侧上一个，半导体区域用作源极区域和漏极区域之间的隔膜，以及设置在电介质绝缘膜上的半导体区域的表面上的栅极电极。在半导体存储器件中，通过向半导体区域注入电荷将信息写入到半导体存储元件中，并且通过检测由于电注入而导致的半导体区域表面上的导电性的变化来读取写入信息收费。

77. 发明授权

US4008062A Apparatus for detecting the position of float glass 失效
标题翻译：用于检测浮法玻璃位置的装置
公开(公告)号：US4008062A
公开(公告)日：1977-02-15
申请号：US658017
申请日：1976-02-13
申请人： Tuneharu Nishikori , Tetsu Mori , Yasuo Kobayashi , Kenjiro Hiyama
发明人： Tuneharu Nishikori , Tetsu Mori , Yasuo Kobayashi , Kenjiro Hiyama
IPC分类号： G01D5/39 , C03B18/02
CPC分类号： C03B18/04 , G01D5/39
摘要： For accurately detecting the position of an edge of a glass ribbon in a process for manufacturing float glass, wherein the glass ribbon is moved forwardly along a longitudinal bath of molten metal, a radiation receiving edge of a radiation pyrometer is inserted transversely of the glass ribbon and thereabove from the side wall of the tank supporting the molten metal bath. The radiation receiving edge is reciprocably moved so as to detect the position at which the indication of a predetermined temperature changes, or the position where the temperature increases rapidly, and the position of the edge of the glass ribbon is detected by measuring such position of the radiation receiving edge where the temperature indicated increases rapidly.
摘要翻译：为了在用于制造浮法玻璃的工艺的过程中准确地检测玻璃带的边缘的位置，其中玻璃带沿着熔融金属的纵向浴槽向前移动，辐射高温计的辐射接收边缘横向于玻璃带并且从上面的罐的侧壁支撑熔融金属浴。辐射接收边缘可往复移动，以便检测预定温度的指示变化的位置或温度快速增加的位置，并且通过测量玻璃带边缘的位置来检测玻璃带的边缘位置辐射接收边缘，其中指示的温度快速增加。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式