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    • 72. 发明授权
    • Full-color liquid crystal display device and fabrication process therefor
    • 全彩液晶显示装置及其制造工艺
    • US5625474A
    • 1997-04-29
    • US658891
    • 1996-05-31
    • Shigeru AomoriAtsushi TanakaSeiichi Mitsui
    • Shigeru AomoriAtsushi TanakaSeiichi Mitsui
    • G02F1/1333G02F1/1335G02F1/1343G02F1/1347G02F1/133
    • G02F1/1347G02F1/13475
    • A full-color liquid crystal display device is provided which includes: a first substrate formed with a plurality of liquid crystal driving active elements; and first, second and third liquid crystal cells stacked one on another on an inter-layer film formed on the first substrate; the first liquid crystal cell including a first liquid crystal driving electrode connected to a first liquid crystal driving active element formed on the first substrate; the second liquid crystal cell formed on the second substrate and including a second liquid crystal driving electrode connected to a second liquid crystal driving active element formed on the first substrate via a lower stereo-interconnection extending through the first liquid crystal cell; the third liquid crystal cell formed on the third substrate and including a third liquid crystal driving electrode connected to a third liquid crystal driving active element formed on the first substrate via another lower stereo-interconnection extending through the first liquid crystal cell and an upper stereo-interconnection extending through the second liquid crystal cell.
    • 提供一种全色液晶显示装置,其包括:形成有多个液晶驱动有源元件的第一基板; 以及在形成在第一基板上的层间膜上层叠的第一,第二和第三液晶单元; 所述第一液晶单元包括与形成在所述第一基板上的第一液晶驱动有源元件连接的第一液晶驱动电极; 所述第二液晶单元形成在所述第二基板上,并且包括通过延伸穿过所述第一液晶单元的下立体互连而连接到形成在所述第一基板上的第二液晶驱动有源元件的第二液晶驱动电极; 所述第三液晶单元形成在所述第三基板上,并且包括通过经由所述第一液晶单元延伸的另一下立体互连而连接到形成在所述第一基板上的第三液晶驱动有源元件的第三液晶驱动电极, 互连延伸穿过第二液晶单元。
    • 77. 发明授权
    • Multilayer deposition method for forming Pb-doped Bi-Sr-Ca-Cu-O
Superconducting films
    • 用于形成Pb掺杂的Bi-Sr-Ca-Cu-O超导膜的多层沉积方法
    • US5141917A
    • 1992-08-25
    • US565209
    • 1990-08-09
    • Atsushi TanakaNobuo KameharaKoichi Niwa
    • Atsushi TanakaNobuo KameharaKoichi Niwa
    • B32B18/00C04B35/45H01L39/24
    • C04B35/45H01L39/2422Y10S505/731Y10S505/732Y10S505/742
    • A perovskite type superconductor film having a high content, almost a single phase, of the high Tc phase is formed by the steps of: depositing at least one first film of a first material (e.g., a composite oxide of Bi-Sr-Ca-Cu-O system or Tl-Ba-Ca-Cu-O system) constituting a perovskite type superconductor over a substrate; depositing at least one second film of a second material containing an oxide or element (Bi.sub.2 O.sub.3, Tl.sub.2 O.sub.3, PbO.sub.x, etc., particularly PbO.sub.x) having a vapor pressure of more than 10 .sup.-4 Pa at 800.degree. C. at least as a main component over the substrate; to thereby form a stack of the first and second films; and heat treating the stack of the first and second films to form the perovskite type superconductor film on the substrate. Further, preferred compositions of the as-deposited films or stack are determined.
    • 通过以下步骤形成具有高含量,几乎单相的高Tc相的钙钛矿型超导体膜:沉积至少一种第一材料的第一膜(例如,Bi-Sr-Ca- Cu-O系或Tl-Ba-Ca-Cu-O系),在基板上构成钙钛矿型超导体; 沉积至少一个第二材料的第二材料,该第二材料包含氧化物或元素(Bi 2 O 3,Tl 2 O 3,PbO x等,特别是PbO x),其在800℃下蒸气压大于10 -4 Pa至少作为主要成分 基材; 从而形成第一和第二膜的堆叠; 并对第一和第二膜的堆叠进行热处理,以在基板上形成钙钛矿型超导膜。 此外,确定沉积膜或叠层的优选组成。
    • 80. 发明授权
    • Optical sensor, optical sensor array, optical sensor driving method, and optical sensor array driving method
    • 光学传感器,光学传感器阵列,光学传感器驱动方法和光学传感器阵列驱动方法
    • US08669626B2
    • 2014-03-11
    • US12952979
    • 2010-11-23
    • Atsushi TanakaTakeshi Hama
    • Atsushi TanakaTakeshi Hama
    • H01L27/14
    • H01L31/112H01L27/1446
    • An optical sensor that is a transistor which includes a gate electrode including a semiconductor material where the carrier concentration is 1.0×1014/cm3 to 1.0×1017/cm3, an active layer including a semiconductor layer to form a channel by carriers of the same type as the gate electrode, a source electrode, a drain electrode, and a gate insulating film, wherein intensity of irradiated light is detected by a change in a value of current flowing between the source electrode and the drain electrode when the light is irradiated onto a depletion layer formed in the gate electrode; an optical sensor array, an optical sensor driving method, and an optical sensor array driving method are provided.
    • 一种光学传感器,其是包括载流子浓度为1.0×10 14 / cm 3至1.0×101 7 / cm 3的半导体材料的栅电极的晶体管,包括通过相同载流子形成沟道的半导体层的有源层 作为栅电极,源电极,漏电极和栅极绝缘膜,其中当光照射到源极电极和栅极绝缘膜上时,通过在源电极和漏极之间流动的电流的值的变化来检测照射光的强度 形成在栅电极中的耗尽层; 提供光学传感器阵列,光学传感器驱动方法和光学传感器阵列驱动方法。