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71. 发明授权

US06750550B1 Adhesive and semiconductor devices 失效
标题翻译：粘合剂和半导体器件
公开(公告)号：US06750550B1
公开(公告)日：2004-06-15
申请号：US09597218
申请日：2000-06-20
申请人： Kimio Yamakawa , Minoru Isshiki , Katsutoshi Mine
发明人： Kimio Yamakawa , Minoru Isshiki , Katsutoshi Mine
IPC分类号： H01L2348
CPC分类号： H01L24/32 , C08G59/306 , C08G59/3254 , C08K7/18 , C08L2666/54 , C09J11/02 , C09J183/04 , H01L21/563 , H01L24/83 , H01L2224/16225 , H01L2224/27013 , H01L2224/2919 , H01L2224/73203 , H01L2224/73204 , H01L2224/83051 , H01L2224/8319 , H01L2224/8385 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/14 , H01L2924/00
摘要： An adhesive composition for bonding semiconductor chips to their chip mounting components comprising a curable polymer composition comprising from 1 to 900 weight-ppm spherical filler having an average particle size of from 10 to 100 &mgr;m and a major axis-to-minor axis ratio of from 1 to 1.5. Also, semiconductor devices in which a semiconductor chip therein is bonded to its chip mounting component by the aforesaid adhesive composition.
摘要翻译：一种用于将半导体芯片接合到其芯片安装部件的粘合剂组合物，其包含可固化聚合物组合物，其包含1至900重量ppm的平均粒度为10至100μm的球形填料，并且长轴与短轴比为 1〜1.5。此外，其中通过上述粘合剂组合物将其中的半导体芯片结合到其芯片安装部件的半导体器件。

72. 发明授权

US06451381B2 Electrically insulating crosslinked thin-film-forming organic resin composition and method for forming thin film therefrom 失效
标题翻译：电绝缘交联薄膜形成有机树脂组合物及其薄膜形成方法
公开(公告)号：US06451381B2
公开(公告)日：2002-09-17
申请号：US09765196
申请日：2001-01-18
申请人： Takashi Nakamura , Akihiko Kobayashi , Kiyotaka Sawa , Katsutoshi Mine
发明人： Takashi Nakamura , Akihiko Kobayashi , Kiyotaka Sawa , Katsutoshi Mine
IPC分类号： C08G77455
CPC分类号： H01L21/02126 , G03F7/0757 , G03F7/0758 , H01L21/02216 , H01L21/02282 , H01L21/02351 , H01L21/3121 , H01L21/3122
摘要： An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.
摘要翻译：一种电绝缘交联薄膜形成有机树脂组合物，其包含（A）具有硅原子键合氢原子或硅原子键合的烯基的电绝缘有机树脂和（B）溶剂，以及形成交联薄膜电影。

73. 发明授权

US06304000B1 Semiconductor device comprising silicone adhesive sheet 失效
标题翻译：包括硅酮粘合片的半导体装置
公开(公告)号：US06304000B1
公开(公告)日：2001-10-16
申请号：US09706561
申请日：2000-11-06
申请人： Minoru Isshiki , Katsutoshi Mine , Yoshiko Otani , Kimio Yamakawa
发明人： Minoru Isshiki , Katsutoshi Mine , Yoshiko Otani , Kimio Yamakawa
IPC分类号： H01L2348
CPC分类号： H01L24/29 , C08L83/00 , C09J7/10 , C09J183/04 , C09J2203/326 , C09J2483/00 , H01L24/73 , H01L24/83 , H01L2224/16225 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29191 , H01L2224/29298 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8319 , H01L2224/83856 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/1301 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00014 , H01L2924/0715 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： A semiconductor device comprising a semiconductor chip, a semiconductor chip attachment site facing the semiconductor chip, and an adhesive silicone sheet bonding the semiconductor chip to the chip attachment site, wherein at least the surfaces of the sheet that connect the semiconductor chip and chip attachment site are a semi-cured product of a curable silicone composition.
摘要翻译：一种半导体器件，包括半导体芯片，面向半导体芯片的半导体芯片附着部位和将半导体芯片接合到芯片安装部位的粘合性硅树脂片，其中至少连接半导体芯片和芯片附接部位的片材的表面是可固化的有机硅组合物的半固化产物。

74. 发明授权

US06235862B1 Adhesive silicone sheet, method for the preparation thereof and semiconductor devices 失效
标题翻译：粘合硅胶片，其制备方法和半导体装置
公开(公告)号：US06235862B1
公开(公告)日：2001-05-22
申请号：US09070078
申请日：1998-04-30
申请人： Minoru Isshiki , Katsutoshi Mine , Yoshiko Otani , Kimio Yamakawa
发明人： Minoru Isshiki , Katsutoshi Mine , Yoshiko Otani , Kimio Yamakawa
IPC分类号： H01L2144
CPC分类号： H01L24/29 , C08L83/00 , C09J7/10 , C09J183/04 , C09J2203/326 , C09J2483/00 , H01L24/73 , H01L24/83 , H01L2224/16225 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29191 , H01L2224/29298 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/8319 , H01L2224/83856 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/1301 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/00014 , H01L2924/0715 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： An adhesive silicone sheet that enroute to its complete cure is inhibited from releasing low-viscosity silicone oil, that provides excellent bond between a semiconductor chip and the corresponding chip attachment site, and that as a consequence of these features supports the fabrication of highly reliable semiconductor devices, The adhesive silicone sheet is produced by a very efficient method which yields an adhesive silicone sheet having particularly good adhesiveness. The siliocone adhesive sheet is used to produce highly reliable semiconductor devices in which the semiconductor chip has been bonded to its attachment site using the subject adhesive silicone sheet.
摘要翻译：阻止其完全固化的粘性硅树脂片材释放出低粘度硅油，从而在半导体芯片和相应的芯片附着部位之间提供优异的粘合性，并且作为这些特征的结果支持制造高度可靠的半导体粘合性硅胶片是通过非常有效的方法制造的，其产生具有特别好的粘合性的粘合性硅树脂片。硅胶粘合片用于制造高可靠性的半导体器件，其中半导体芯片已经使用主题粘合性硅树脂片粘合到其附着位置。

75. 发明授权

US06231974B1 Hot-melt adhesive sheet and semiconductor devices 失效
标题翻译：热熔胶片和半导体装置
公开(公告)号：US06231974B1
公开(公告)日：2001-05-15
申请号：US09082889
申请日：1998-05-21
申请人： Kimio Yamakawa , Minoru Isshiki , Yoshiko Otani , Katsutoshi Mine
发明人： Kimio Yamakawa , Minoru Isshiki , Yoshiko Otani , Katsutoshi Mine
IPC分类号： B32B712
CPC分类号： H01L24/83 , C09J7/22 , C09J7/35 , C09J2201/128 , C09J2483/00 , H01L24/29 , H01L24/73 , H01L2224/16225 , H01L2224/29 , H01L2224/29101 , H01L2224/2919 , H01L2224/29191 , H01L2224/29298 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2224/83101 , H01L2224/8319 , H01L2224/8388 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/09701 , H01L2924/10253 , H01L2924/1301 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , Y10T428/28 , Y10T428/2813 , Y10T428/2848 , H01L2924/00014 , H01L2924/0715 , H01L2924/00 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： To provides a hot-melt adhesive sheet that provides very precise bonding and a stress-relaxation capacity. Also, to provide highly reliable semiconductor devices in which the semiconductor element is bonded to its element attachment site using this hot-melt adhesive sheet. Hot-melt adhesive sheet that characteristically has hot-melt adhesive on both surfaces of the sheet and spacer within the sheet. Also, semiconductor device characterized in that the semiconductor element therein is bonded to its element attachment site by the above-described hot-melt adhesive sheet.
摘要翻译：提供提供非常精确的结合和应力松弛能力的热熔粘合片。此外，为了提供使用该热熔粘合片将半导体元件结合到其元件安装部位的高度可靠的半导体器件。在片材的两个表面上特征性地具有热熔粘合剂的熔融粘合片和位于片。此外，半导体器件的特征在于，其中的半导体元件通过上述热熔粘合片粘合到其元件附着位置。

76. 发明授权

US06191183B1 Method for the formation of silica thin films 有权
标题翻译：二氧化硅薄膜的形成方法
公开(公告)号：US06191183B1
公开(公告)日：2001-02-20
申请号：US09412219
申请日：1999-10-05
申请人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
发明人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
IPC分类号： C08J328
CPC分类号： C09D183/04 , C08G77/12 , H01L21/316 , Y10T428/31663
摘要： The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.
摘要翻译：本发明涉及可以形成二氧化硅薄膜的组合物，其中所述组合物在施加到基底上时作为基底平面化涂层表现良好，并且可以通过暴露于高能辐射而转化成具有优异电绝缘性能的二氧化硅薄膜。用于形成二氧化硅薄膜的组合物包括（A）含有至少45重量％的分子量不超过1500的氢倍半硅氧烷树脂的氢倍半硅氧烷树脂; 和（B）溶剂。通过蒸发溶剂（B）制备二氧化硅薄膜，然后通过将所述基材的表面暴露于高能辐射而将至少一部分氢倍半硅氧烷树脂（A）转化为二氧化硅。优选的衬底是具有至少一个导电层的半导体衬底。

77. 发明授权

US6149966A Composition and process for forming electrically insulating thin films 失效
标题翻译：用于形成电绝缘薄膜的组成和工艺
公开(公告)号：US6149966A
公开(公告)日：2000-11-21
申请号：US120384
申请日：1998-03-31
申请人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
发明人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
IPC分类号： C09D5/25 , C09D7/12 , C09D125/02 , C09D127/12 , C09D129/10 , C09D179/08 , C09D183/04 , C09D183/05 , C09D201/00 , H01B3/30 , H01B3/42 , H01B3/46 , H01L21/312 , H01L21/316 , B05D3/02 , B05D5/12
CPC分类号： H01L21/312 , C09D183/04 , H01B3/46
摘要： To provide a composition and process for forming insulating films that can produce insulating films having low dielectric constants. The composition comprises (A) an electrically insulating curable inorganic or organic resin, (B) a solvent, and (C) at least one solvent-soluble substance (excluding the solvent used for component (B)) that upon heating or by interaction with the resin (A) can generate gas or undergo volatilization in the temperature range from 0.degree. C. to 800.degree. C. The insulating films are prepared by coating the surface of a substrate the composition; evaporating the solvent; and subsequently heating the substrate in order to generate gas from component (C) during the course of or after the cure of the said resin (A).
摘要翻译：提供一种用于形成可制造具有低介电常数的绝缘膜的绝缘膜的组合物和工艺。组合物包含（A）电绝缘的可固化无机或有机树脂，（B）溶剂和（C）至少一种溶剂可溶物质（不包括用于组分（B）的溶剂）），其在加热时或通过与树脂（A）可以在0℃至800℃的温度范围内产生气体或挥发。绝缘膜通过将基材的表面涂布在该组合物上而制备; 蒸发溶剂; 然后在所述树脂（A）的固化过程中或之后加热所述基材以便从组分（C）产生气体。

78. 发明授权

US6074695A Composition and process for forming electrically insulating thin films 失效
标题翻译：用于形成电绝缘薄膜的组成和工艺
公开(公告)号：US6074695A
公开(公告)日：2000-06-13
申请号：US52379
申请日：1998-03-31
申请人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
发明人： Akihiko Kobayashi , Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki , Kiyotaka Sawa
IPC分类号： C09D5/25 , C09D7/12 , C09D125/02 , C09D127/12 , C09D129/10 , C09D179/08 , C09D183/04 , C09D183/05 , C09D201/00 , H01B3/30 , H01B3/42 , H01B3/46 , H01L21/312 , H01L21/316 , B05D5/00
CPC分类号： H01L21/312 , C09D183/04 , H01B3/46
摘要： To provide a composition for the formation of insulating films that can form an insulating film having a low dielectric constant. The composition comprises (A) an electrically insulating curable resin selected from the group consisting of electrically insulating curable organic resins and electrically insulating curable inorganic resins; and (B) at least two solvents: (B)(i) a solvent capable of dissolving resin (A) and (B)(ii) a solvent whose boiling point or vapor pressure curve differs from that of solvent (B)(i) or whose affinity for resin (A) differs from that of solvent (B)(i). Also claimed is a method for forming a insulating films that have a dielectric constant of less than 2.7.
摘要翻译：提供用于形成可以形成具有低介电常数的绝缘膜的绝缘膜的组合物。该组合物包含（A）选自电绝缘性可固化有机树脂和电绝缘可固化无机树脂的电绝缘可固化树脂; 和（B）至少两种溶剂：（B）（i）能够溶解树脂（A）和（B）的溶剂（ii）沸点或蒸气压曲线不同于溶剂（B）（i ）或其对树脂（A）的亲和力与溶剂（B）（i）的亲和性不同。还要求保护的是形成介电常数小于2.7的绝缘膜的方法。

79. 发明授权

US5708054A Two-part curable liquid silicone composition 失效
标题翻译：两部分可固化液体硅酮组合物
公开(公告)号：US5708054A
公开(公告)日：1998-01-13
申请号：US738486
申请日：1996-10-28
申请人： Katsutoshi Mine , Takae Takeuchi , Kimio Yamakawa
发明人： Katsutoshi Mine , Takae Takeuchi , Kimio Yamakawa
IPC分类号： C08L83/05 , C08K5/5419 , C08L83/04 , C08L83/07 , C08K9/06
CPC分类号： C08L83/04 , C08G77/12 , C08G77/18 , C08G77/20
摘要： A two-part composition comprising a liquid composition (I) composed of the components (A), (C), and (E) described below and a liquid composition (II) composed of the components (A) (B), (C), and (D) described below, which yield upon mixing a curable liquid silicone composition comprising (A) an alkenyl-substituted poyorganopolysiloxane; (B) a hydrogen-substituted organopolysiloxane in an amount that provides 0.3 to 10 moles silicon-bonded hydrogen from component (B) per 1 mole alkenyl in component (A); (C) an inorganic filler that has a specific surface of 50 to 500 m.sup.2 /g; (D) an alkoxy-substituted organopolysiloxane; and (E) platinum catalyst in a quantity sufficient to cure the instant composition; wherein the curable silicone composition that results when liquid composition (I) and liquid composition (II) are mixed, is thixotropic and has a viscosity, immediately upon the mixing that is greater than the viscosity of liquid composition (II).
摘要翻译：包含由下述组分（A），（C）和（E）组成的液体组合物（I）和由组分（A）（B），（C）组成的液体组合物（II）的两部分组合物）和（D），其在混合包含（A）链烯基取代的聚有机聚硅氧烷的可固化液体硅氧烷组合物时产率; （B）组分（A）中每1摩尔烯烃从组分（B）提供0.3至10摩尔与硅键合的氢的量的氢取代的有机聚硅氧烷; （C）比表面积为50〜500m 2 / g的无机填料; （D）烷氧基取代的有机聚硅氧烷; 和（E）铂催化剂，其量足以固化本发明组合物; 其中当混合液体组合物（I）和液体组合物（II）时产生的可固化有机硅组合物是触变性的并且在混合时立即具有大于液体组合物（II）的粘度的粘度）。

80. 发明授权

US5370904A Method for the formation of silicon oxide films 失效
标题翻译：氧化硅膜形成方法
公开(公告)号：US5370904A
公开(公告)日：1994-12-06
申请号：US148744
申请日：1993-10-29
申请人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
发明人： Katsutoshi Mine , Takashi Nakamura , Motoshi Sasaki
IPC分类号： C03C17/25 , C03C17/30 , C04B41/50 , C04B41/87 , C09D183/05 , C23C18/12 , H01L21/312 , H01L21/316 , B05D5/12
CPC分类号： C04B41/87 , C03C17/25 , C03C17/30 , C04B41/009 , C04B41/5035 , C23C18/1204 , C23C18/1212 , C23C18/122 , C23C18/1275 , C23C18/1279 , H01L21/02134 , H01L21/02164 , H01L21/02282 , H01L21/3124 , H01L21/316 , C03C2217/213 , C03C2218/11 , C03C2218/32
摘要： Disclosed is a method for the formation of a thick silicon oxide film on the surface of a substrate. The method comprises forming a hydrogen silsesquioxane resin film on the surface of a substrate and converting the hydrogen silsesquioxane resin into silicon oxide ceramic by heating the resin film-bearing substrate in an inert gas atmosphere at 250.degree. C. to 500.degree. C. until the content of silicon-bonded hydrogen in the silicon oxide product has reached .ltoreq.80% of the content of silicon-bonded hydrogen in the hydrogen silsesquioxane.
摘要翻译：公开了在基板的表面上形成厚的氧化硅膜的方法。该方法包括在基材表面上形成氢倍半硅氧烷树脂膜，并在250℃至500℃的惰性气体气氛中加热树脂膜承载基底，将氢倍半硅氧烷树脂转化为氧化硅陶瓷，直到氧化硅产物中硅键合氢的含量已达到氢倍半硅氧烷中与硅键合的氢的含量的80％。

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