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71. 发明授权

US08004874B2 Multi-terminal resistance device 有权
标题翻译：多端电阻设备
公开(公告)号：US08004874B2
公开(公告)日：2011-08-23
申请号：US12412644
申请日：2009-03-27
申请人： Haiwen Xi , Kaizhong Gao , Song Xue
发明人： Haiwen Xi , Kaizhong Gao , Song Xue
IPC分类号： G11C11/00 , G11C43/02
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/32 , G11C2213/76 , H01L45/04 , H01L45/1206 , H01L45/122 , H01L45/146 , H01L45/147
摘要： Embodiments of the invention provide a multi-terminal resistance device with first and second electrodes, a shared third electrode, and a resistance layer providing first and second current paths between the shared third electrode and the first and second electrodes, respectively. A current state of the device may be programmed by applying one or more electrical signals along the first and/or second current paths to change a resistance of the device. In some embodiments, applying an electrical signal may switch a junction resistance of the first and/or second electrodes and the resistance layer between two or more resistance values. The device may include a shared fourth electrode to provide extra programming capability. In some embodiments, the device may be used to store a data state, to determine a count of multiple electrical signals, or to perform a logic operation between two electrical signals.
摘要翻译：本发明的实施例提供了具有第一和第二电极，共享第三电极和在共享的第三电极和第一和第二电极之间分别提供第一和第二电流路径的电阻层的多端电阻装置。可以通过沿着第一和/或第二电流路径施加一个或多个电信号来改变器件的电阻来编程器件的当前状态。在一些实施例中，施加电信号可以将第一和/或第二电极和电阻层的结电阻切换到两个或更多个电阻值之间。该设备可以包括共享的第四电极以提供额外的编程能力。在一些实施例中，该设备可以用于存储数据状态，以确定多个电信号的计数，或者在两个电信号之间执行逻辑运算。

72. 发明授权

US07999337B2 Static magnetic field assisted resistive sense element 有权
标题翻译：静磁场辅助电阻感应元件
公开(公告)号：US07999337B2
公开(公告)日：2011-08-16
申请号：US12501902
申请日：2009-07-13
申请人： Yuankai Zheng , Xiaohua Lou , Haiwen Xi , Michael Xuefei Tang
发明人： Yuankai Zheng , Xiaohua Lou , Haiwen Xi , Michael Xuefei Tang
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.
摘要翻译：用于将数据写入非易失性存储单元的装置和相关方法，例如自旋转矩传递随机存取存储器（STRAM）。根据一些实施例，电阻感测元件（RSE）具有热辅助区域，磁性隧道结（MTJ）和固定区域。当以旋转极化电流将第一逻辑状态写入MTJ时，固定和热辅助区域各自具有基本为零的净磁矩。当第二逻辑状态被写入具有静态磁场的MTJ时，被钉扎区域具有基本为零的净磁矩，并且热辅助区域具有非零净磁矩。

73. 发明申请

US20110177621A1 MAGNETIC MEMORY CELL CONSTRUCTION 有权
公开(公告)号：US20110177621A1
公开(公告)日：2011-07-21
申请号：US13073195
申请日：2011-03-28
申请人： Kaizhong Gao , Haiwen Xi
发明人： Kaizhong Gao , Haiwen Xi
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.

74. 发明申请

US20110149642A1 Static Magnetic Field Assisted Resistive Sense Element 有权
公开(公告)号：US20110149642A1
公开(公告)日：2011-06-23
申请号：US13040163
申请日：2011-03-03
申请人： Yuankai Zheng , Xiaohua Lou , Haiwen Xi , Michael Xuefei Tang
发明人： Yuankai Zheng , Xiaohua Lou , Haiwen Xi , Michael Xuefei Tang
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

75. 发明授权

US07933146B2 Electronic devices utilizing spin torque transfer to flip magnetic orientation 有权
标题翻译：使用自旋转矩传递来电磁方向的电子装置
公开(公告)号：US07933146B2
公开(公告)日：2011-04-26
申请号：US12415243
申请日：2009-03-31
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/3254 , H01F10/3272 , H01F10/3286 , Y10S977/935
摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.
摘要翻译：电子设备，其包括（i）磁化控制结构; （ii）隧道屏障结构; 和（iii）可磁化控制结构，包括：第一偏振层; 以及第一稳定层，其中所述隧道势垒结构在所述磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述隧道势垒结构之间，其中所述电子器件具有两个稳定的整体磁性构造，并且其中施加到所述电子器件的第一单极电流将导致所述磁化控制结构的取向反转其取向，并且施加到所述电子器件的第二单极电流将导致所述磁化可控结构切换其磁化，以获得两个稳定的整体磁性配置，其中第二单极性电流具有小于第一单极电流的幅度。

76. 发明授权

US07933137B2 Magnetic random access memory (MRAM) utilizing magnetic flip-flop structures 有权
标题翻译：磁性随机存取存储器（MRAM）利用磁性触发器结构
公开(公告)号：US07933137B2
公开(公告)日：2011-04-26
申请号：US12415257
申请日：2009-03-31
申请人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
发明人： Dimitar V. Dimitrov , Olle Gunnar Heinonen , Yiran Chen , Haiwen Xi , Xiaohua Lou
IPC分类号： G11C17/06
CPC分类号： H01L27/224 , G11C7/04 , G11C11/161 , G11C11/1659 , H01L43/08
摘要： Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current; a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer. MRAM cells that include such devices and arrays including such cells are also disclosed.
摘要翻译：包括包含磁化控制结构的磁触发器结构的非易失磁性随机存取存储器（MRAM）器件; 第一隧道屏障结构; 以及包括第一偏振层的可磁化控制结构; 以及第一稳定层，其中所述第一隧道势垒结构在所述可磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述第一隧道势垒结构之间，其中所述磁性触发器装置具有两个稳定的整体磁性结构，并且其中施加到器件的第一单极电流将引起磁化控制结构的取向反转其取向，并且施加到电子器件的第二单极电流将导致磁化可控结构切换其磁化，使得该器件达到两种稳定的总体磁性结构中的一种，其中第二单极性电流的振幅小于第一单极性电流; 第二隧道势垒结构和参考层，其中所述第二隧道势垒结构位于所述磁触发器件和所述参考层之间。还公开了包括这样的装置和包括这种细胞的阵列的MRAM细胞。

77. 发明申请

US20110089510A1 MAGNETIC MEMORY CELL CONSTRUCTION 有权
标题翻译：磁记忆体细胞结构
公开(公告)号：US20110089510A1
公开(公告)日：2011-04-21
申请号：US12977630
申请日：2010-12-23
申请人： Kaizhong Gao , Haiwen Xi
发明人： Kaizhong Gao , Haiwen Xi
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , G11C11/161 , H01F10/3218 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L43/08 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A magnetic tunnel junction cell having a free layer, a ferromagnetic pinned layer, and a barrier layer therebetween. The free layer has a central ferromagnetic portion and a stabilizing portion radially proximate the central ferromagnetic portion. The construction can be used for both in-plane magnetic memory cells where the magnetization orientation of the magnetic layer is in the stack film plane and out-of-plane magnetic memory cells where the magnetization orientation of the magnetic layer is out of the stack film plane, e.g., perpendicular to the stack plane.
摘要翻译：具有自由层，铁磁性钉扎层和它们之间的阻挡层的磁性隧道结电池。自由层具有中心铁磁部分和径向靠近中心铁磁部分的稳定部分。该结构可以用于其中磁性层的磁化取向在堆叠膜平面中的面内磁性存储单元和磁性层的磁化取向在堆叠膜之外的面外磁性存储单元平面，例如垂直于堆叠平面。

78. 发明申请

US20110032749A1 NAND Based Resistive Sense Memory Cell Architecture 有权
标题翻译：基于NAND的电阻式感应存储器单元架构
公开(公告)号：US20110032749A1
公开(公告)日：2011-02-10
申请号：US12903716
申请日：2010-10-13
申请人： Harry Hongyue Liu , Haiwen Xi , Antoine Khoueir , Song Xue
发明人： Harry Hongyue Liu , Haiwen Xi , Antoine Khoueir , Song Xue
IPC分类号： G11C11/34 , H01L45/00
CPC分类号： H01L27/24 , G11C11/1659 , G11C13/0007 , G11C13/003 , G11C2213/32 , G11C2213/34 , G11C2213/75 , H01L27/228
摘要： Various embodiments are directed to an apparatus comprising a semiconductor memory array with non-volatile memory unit cells arranged into a NAND block. Each of the unit cells comprises a resistive sense element connected in parallel with a switching element. The resistive sense elements are connected in series to form a first serial path, and the switching elements are connected in series to form a second serial path parallel to the first serial path. Each resistive sense element is serially connected to an adjacent resistive sense element in the block by a tortuous conductive path having a portion that extends substantially vertically between said elements to provide operational isolation therefor.
摘要翻译：各种实施例涉及一种包括具有布置在NAND块中的非易失性存储器单元的半导体存储器阵列的装置。每个单元电池包括与开关元件并联连接的电阻感测元件。电阻感测元件串联连接以形成第一串行路径，并且开关元件串联连接以形成平行于第一串行路径的第二串行路径。每个电阻感测元件通过具有在所述元件之间基本上垂直延伸的部分的曲折导电路径串联连接到块中的相邻电阻感测元件，以提供对其的操作隔离。

79. 发明申请

US20110026317A1 SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS 有权
标题翻译：转子转矩记忆自读参考读写方法
公开(公告)号：US20110026317A1
公开(公告)日：2011-02-03
申请号：US12903305
申请日：2010-10-13
申请人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Yiran Chen , Xiaobin Wang , Zheng Gao , Haiwen Xi , Dimitar V. Dimitrov
IPC分类号： G11C11/00
CPC分类号： G11C11/1675 , G11C11/1659 , G11C11/1673
摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.
摘要翻译：描述了自旋转移力矩存储装置和自参考读和写辅助方案。读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高电阻状态或低电阻状态。还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

80. 发明申请

US20110007430A1 Static Magnetic Field Assisted Resistive Sense Element 有权
公开(公告)号：US20110007430A1
公开(公告)日：2011-01-13
申请号：US12501902
申请日：2009-07-13
申请人： Yuankai Zheng , Xiaohua Lou , Haiwen Xi , Michael Xuefei Tang
发明人： Yuankai Zheng , Xiaohua Lou , Haiwen Xi , Michael Xuefei Tang
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： Apparatus and associated method for writing data to a non-volatile memory cell, such as spin-torque transfer random access memory (STRAM). In accordance with some embodiments, a resistive sense element (RSE) has a heat assist region, magnetic tunneling junction (MTJ), and pinned region. When a first logical state is written to the MTJ with a spin polarized current, the pinned and heat assist regions each have a substantially zero net magnetic moment. When a second logical state is written to the MTJ with a static magnetic field, the pinned region has a substantially zero net magnetic moment and the heat assist region has a non-zero net magnetic moment.

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