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    • 72. 发明授权
    • Lock assembly with removable shackle
    • 锁紧组件与可移动卸扣
    • US07856855B2
    • 2010-12-28
    • US11690241
    • 2007-03-23
    • Steven A. FantlPatrick Smith
    • Steven A. FantlPatrick Smith
    • E05B67/22
    • E05B67/24E05B17/0062E05B63/0056E05B67/003E05B67/063Y10T70/454Y10T70/457Y10T70/459Y10T70/461
    • A lock assembly has a lock body and a shackle. The shackle has a leg. A locking element is disposed in the lock body. The locking element is selectively engageable to the shackle. A cam is disposed in the lock body. The cam has a lock position for moving the locking element to engage the shackle. There is also an unlocked position for moving the locking element to disengage the shackle. The cam has a shackle removal position for removing the shackle from the lock body. The leg has a shackle removal recess sized to receive the locking element sufficiently so as to permit movement of the cam to the shackle removal position. The cam is configured to displace the locking element into the shackle removal recess.
    • 锁组件具有锁体和钩环。 手铐有一条腿。 锁定元件设置在锁体内。 锁定元件可选择性地接合到钩环。 凸轮设置在锁体内。 凸轮具有用于移动锁定元件以接合钩环的锁定位置。 还有一个解锁位置,用于移动锁定元件以脱离钩环。 凸轮具有用于从锁体去除钩环的卸扣位置。 该腿具有一个卸扣槽,其尺寸被设计成足以容纳锁定元件,以允许凸轮移动到卸扣位置。 凸轮构造成将锁定元件移动到卸载凹槽中。
    • 74. 发明授权
    • Method of manufacturing complementary diodes
    • 制造互补二极管的方法
    • US07528017B2
    • 2009-05-05
    • US11521924
    • 2006-09-15
    • Vivek SubramanianPatrick Smith
    • Vivek SubramanianPatrick Smith
    • H01L21/20
    • H01L29/86H01L27/1285H01L27/1288H01L27/1292Y10S257/91Y10T307/964
    • Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.
    • 公开了包含这种二极管和TFT的工艺变容二极管和二极管连接的薄膜晶体管(TFT),印刷或图案化结构(例如电路),其制造方法及其用于识别标签和传感器的应用。 包括串联的互补二极管或二极管连接的TFT的图案化结构可以稳定使用印刷或激光写入技术制造的二极管的阈值电压(Vt)。 本发明有利地利用NMOS TFT(Vtn)的Vt和PMOS TFT(Vtp)的Vt之间的间隔来建立和/或提高印刷或激光写入的二极管上的正向压降的稳定性。 本发明的其它应用涉及参考电压发生器,电压钳位电路,控制相关或差分信号传输线上的电压的方法,以及RFID和EAS标签和传感器。