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71. 发明申请

US20120098582A1 Flip-Flop Circuit Design 有权
标题翻译：触发器电路设计
公开(公告)号：US20120098582A1
公开(公告)日：2012-04-26
申请号：US12908602
申请日：2010-10-20
申请人： Chi-Lin Liu , Chung-Cheng Chou , Yi-Tzu Chen
发明人： Chi-Lin Liu , Chung-Cheng Chou , Yi-Tzu Chen
IPC分类号： H03K3/356 , H03K3/01
CPC分类号： H03K3/356121
摘要： A flip-flop circuit includes a precharge circuit that outputs a charge signal high when a received clock signal is LOW. A delay clock input circuit generates a delayed clock input controlled signal with the same value as an input signal when the clock signal is HIGH. A charge keeper circuit, upon receiving the charge signal and the delayed clock input controlled signal, generates a charge keeping signal, which equals the charged signal when the clock signal is LOW and equals the delayed clock input controlled signal when the clock signal is HIGH. A separator circuit can receive the charge keeping signal and clock signal and generate an inverted charge keeping signal. A storage circuit is configured to receive the inverted charge keeping signal, a present state signal, and inverted present state signal, and to generate a present state signal and an inverted present state signal.
摘要翻译：触发器电路包括预充电电路，当接收到的时钟信号为低电平时，该充电电路输出高电平信号。当时钟信号为高电平时，延迟时钟输入电路产生与输入信号相同值的延迟时钟输入受控信号。充电保持器电路在接收到充电信号和延迟的时钟输入受控信号时产生一个充电保持信号，当时钟信号为低电平时，该充电信号等于充电信号，并且当时钟信号为高电平时等于延迟的时钟输入受控信号。分离器电路可以接收电荷保持信号和时钟信号并产生反向电荷保持信号。存储电路被配置为接收反转的保持电荷信号，当前状态信号和反相的当前状态信号，并且生成当前状态信号和反相的当前状态信号。

72. 发明申请

US20080188160A1 Interactive motion apparatus 审中-公开
标题翻译：交互式运动装置
公开(公告)号：US20080188160A1
公开(公告)日：2008-08-07
申请号：US12068069
申请日：2008-02-01
申请人： Chung-Cheng Chou , Wai Wang
发明人： Chung-Cheng Chou , Wai Wang
IPC分类号： A63H3/36
CPC分类号： A63H15/06 , A63H13/00
摘要： An interactive apparatus has a base and a motion unit. The base has a first curved surface with a concave facing. The motion unit is located on the first curved surface and has a second curved surface with a convex facing contacting the first curved surface. In addition, the second curved surface has a curvature greater than that of the first curved surface. As the motion unit is steady on the first curved surface, a gravity center of the motion unit is located below a curvature center of the second curved surface.
摘要翻译：交互式装置具有基座和运动单元。底座具有带凹面的第一曲面。运动单元位于第一弯曲表面上，并且具有第二弯曲表面，凸面面向第一弯曲表面接触。另外，第二曲面的曲率大于第一曲面的曲率。当运动单元在第一弯曲表面上稳定时，运动单元的重心位于第二曲面的曲率中心的下方。

73. 发明申请

US20070120894A1 MICROINJECTORS 审中-公开
标题翻译：微量元素
公开(公告)号：US20070120894A1
公开(公告)日：2007-05-31
申请号：US11563652
申请日：2006-11-27
申请人： Chung-Cheng Chou , Shang-Shi Wu
发明人： Chung-Cheng Chou , Shang-Shi Wu
IPC分类号： B41J2/05
CPC分类号： B41J2/14088 , B41J2/14056 , B41J2002/1437
摘要： Microinjectors are provided. A microinjector includes a substrate, a manifold formed on the substrate, and at least a jet unit. The jet unit includes a nozzle layer connected to the substrate, a nozzle disposed on the nozzle layer, a reservoir, a first heater disposed on a first side of the nozzle and a second heater disposed on a second side of the nozzle. The reservoir is formed between the nozzle layer and the substrate, connecting the nozzle and the manifold. Specifically, the first and second heaters are actuated by individual drive circuits, to heat the reservoir and eject a droplet through the nozzle.
摘要翻译：提供微量注射器。微型注射器包括基底，形成在基底上的歧管和至少一个喷射单元。喷射单元包括连接到基板的喷嘴层，设置在喷嘴层上的喷嘴，储存器，设置在喷嘴的第一侧上的第一加热器和设置在喷嘴的第二侧上的第二加热器。储存器形成在喷嘴层和基板之间，连接喷嘴和歧管。具体地，第一和第二加热器由单独的驱动电路致动，以加热储存器并通过喷嘴喷射液滴。

74. 发明授权

US07224207B2 Charge pump system with smooth voltage output 有权
公开(公告)号：US07224207B2
公开(公告)日：2007-05-29
申请号：US11231035
申请日：2005-09-20
申请人： Chung-Cheng Chou , Chien-Hua Huang
发明人： Chung-Cheng Chou , Chien-Hua Huang
IPC分类号： G05F1/10
CPC分类号： H02M3/07
摘要： A method and system is disclosed for an improved charge pump system. The system comprises one or more charge pump devices for providing an output voltage, a ring oscillator coupled with the charge pump devices for providing an oscillator output, and a multiple level detection device for detecting the output voltage and controlling the charge pump for stabilizing the output voltage.

75. 发明授权

US06967877B2 Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device 有权
公开(公告)号：US06967877B2
公开(公告)日：2005-11-22
申请号：US10658833
申请日：2003-09-09
申请人： Chung-Cheng Chou
发明人： Chung-Cheng Chou
IPC分类号： G11C11/406 , G11C7/00
CPC分类号： G11C11/40626 , G11C11/406 , G11C2211/4061
摘要： Systems for providing a temperature detecting circuit includes seven transistors and six resistors. In a preferred embodiment, one of the seven transistors is configured as an enabling element and the others form two comparators. The six resistors form three voltage dividers with output varying based upon changing temperature. Two comparators are included that sense the difference between the outputs of two of the voltage dividers, and generate a corresponding 2-bit detection signal by which the refresh period is determined. Other systems and methods are also provided.

76. 发明授权

US06862239B1 Circuit and method for self-refresh of DRAM cells through monitoring of cell leakage currents 有权
标题翻译：通过监测电池漏电流来自动刷新DRAM单元的电路和方法
公开(公告)号：US06862239B1
公开(公告)日：2005-03-01
申请号：US10696291
申请日：2003-10-29
申请人： Chien-Hua Huang , Chung-Cheng Chou
发明人： Chien-Hua Huang , Chung-Cheng Chou
IPC分类号： G11C11/406 , G11C7/00
CPC分类号： G11C11/40615 , G11C11/406 , G11C2211/4068
摘要： A circuit and a method for self refresh of DRAM cells are provided. The circuit comprises a bias generator and an oscillator. The bias generator comprises a first current generator, a second current generator and a converter. The first current generator generates a first leakage current of “0” state cells. The second current generator generates a second leakage current of “1” state cells. The converter transforms a current comprising the first leakage current and the second leakage current into output biases. The method comprises generating leakage currents from memory cells; transforming the leakage currents into output biases for determining a self refresh period; and using the output biases to control an oscillator for generating a periodical signal pulse in response to the leakage currents.
摘要翻译：提供了一种用于DRAM单元的自刷新的电路和方法。电路包括偏置发生器和振荡器。偏置发生器包括第一电流发生器，第二电流发生器和转换器。第一电流发生器产生“0”状态单元的第一泄漏电流。第二电流发生器产生“1”状态单元的第二泄漏电流。转换器将包括第一漏电流和第二漏电流的电流转换成输出偏压。该方法包括从存储器单元产生泄漏电流; 将泄漏电流转换成输出偏压，以确定自刷新周期; 以及使用所述输出偏压来控制用于响应于所述漏电流产生周期性信号脉冲的振荡器。

77. 发明授权

US06789880B2 Microinjector for jetting droplets of different sizes 有权
标题翻译：用于喷射不同大小的液滴的微量注射器
公开(公告)号：US06789880B2
公开(公告)日：2004-09-14
申请号：US10064254
申请日：2002-06-26
申请人： Chung-Cheng Chou , Tsung-Ping Hsu , In-Yao Lee , Wei-Lin Chen , Hung-Sheng Hu
发明人： Chung-Cheng Chou , Tsung-Ping Hsu , In-Yao Lee , Wei-Lin Chen , Hung-Sheng Hu
IPC分类号： B41J214
CPC分类号： B41J2/14137 , B41J2/1412 , B41J2002/1437
摘要： A microinjector uses bubbles as virtual valves to eject droplets of different sizes. The microinjector is in fluid communications with a reservoir and has a substrate, an orifice layer, and a plurality of nozzles. The substrate has a manifold for receiving ink from the reservoir. The orifice layer is positioned on the top of the substrate so that a plurality of chambers are formed between the orifice layer and the top of the substrate. Each of the nozzles has an orifice and at least three bubble generating components. The bubble generating components are selectively driven by a driving circuit so that each nozzle can eject droplets of different sizes.
摘要翻译：微量注射器使用气泡作为虚拟阀来喷射不同尺寸的液滴。微型注射器与储存器流体连通，并具有基底，孔层和多个喷嘴。衬底具有用于从储存器接收墨水的歧管。孔层位于基板的顶部，使得在孔板层和基板的顶部之间形成多个室。每个喷嘴具有孔口和至少三个气泡产生部件。气泡生成部件由驱动电路选择性地驱动，使得每个喷嘴可喷射不同尺寸的液滴。

78. 发明授权

US06733616B2 Surface isolation device 失效
标题翻译：表面隔离装置
公开(公告)号：US06733616B2
公开(公告)日：2004-05-11
申请号：US10063878
申请日：2002-05-21
申请人： Hung-Sheng Hu , Tsung-Ping Hsu , Wei-Lin Chen , Chung-Cheng Chou , In-Yao Lee
发明人： Hung-Sheng Hu , Tsung-Ping Hsu , Wei-Lin Chen , Chung-Cheng Chou , In-Yao Lee
IPC分类号： H05H100
CPC分类号： H01L21/67126 , H01L21/30604 , H01L21/31111 , H01L21/67086
摘要： A surface isolation device for isolating a predetermined area of a second surface of a wafer from an etching solution while the etching solution etches a first surface of the wafer to form a plurality of manifolds in the wafer. The surface isolation device has a base for positioning the wafer, a fixture for fixing the wafer on the base, and an isolation ring positioned on the base for isolating the predetermined area from the etching solution. When the fixture fixes the wafer on the base, the wafer sticks to the isolation ring, forming a seal that isolates the predetermined area from the etching solution.
摘要翻译：一种表面隔离装置，用于在蚀刻溶液蚀刻晶片的第一表面以在晶片中形成多个歧管时，将晶片的第二表面的预定区域与蚀刻溶液隔离。表面隔离装置具有用于定位晶片的基座，用于将晶片固定在基座上的固定器，以及位于基座上用于将预定区域与蚀刻溶液隔离的隔离环。当夹具将晶片固定在基座上时，晶片粘附到隔离环上，形成将预定面积与蚀刻溶液隔离的密封。

79. 发明授权

US08116149B2 Circuit and method for small swing memory signals 有权
标题翻译：小摆动记忆信号的电路和方法
公开(公告)号：US08116149B2
公开(公告)日：2012-02-14
申请号：US12687571
申请日：2010-01-14
申请人： Yi-Tzu Chen , Chia-Wei Su , Ming-Zhang Kuo , Chung-Cheng Chou
发明人： Yi-Tzu Chen , Chia-Wei Su , Ming-Zhang Kuo , Chung-Cheng Chou
IPC分类号： G11C7/06
CPC分类号： G11C8/12 , G11C11/413
摘要： Circuits and methods for transmitting and receiving small swing differential voltage data to and from a memory are described. A plurality of memory cells is formed in arrays within a plurality of memory banks. Each memory bank is coupled to a pair of small swing differential voltage global bit lines that extend across the memory. A small signal write driver circuit is coupled to the global bit lines and configured to output a small signal differential voltage on the global bit lines during write cycles. A global sense amplifier is coupled to the global bit line pairs and configured to output a full swing voltage on a data line during a read cycle. Methods for providing small swing global bit line signals to memory cells are disclosed. The use of small swing differential voltage signals across the memory reduces power consumption and shortens memory cycle time.
摘要翻译：描述用于向存储器发送和接收小的摆动差分电压数据的电路和方法。多个存储单元形成为多个存储体中的阵列。每个存储体耦合到跨越存储器延伸的一对小的摆动差分电压全局位线。小信号写驱动器电路耦合到全局位线并且被配置为在写周期期间在全局位线上输出小信号差分电压。全局读出放大器耦合到全局位线对并被配置为在读取周期期间在数据线上输出全摆幅电压。公开了向存储器单元提供小的摆动全局位线信号的方法。在存储器内使用小的摆幅差分电压信号可以降低功耗并缩短存储周期时间。

80. 发明申请

US20120033517A1 ADAPTIVE WRITE BIT LINE AND WORD LINE ADJUSTING MECHANISM FOR MEMORY 有权
标题翻译：自适应写入线和字线调整机制
公开(公告)号：US20120033517A1
公开(公告)日：2012-02-09
申请号：US12849570
申请日：2010-08-03
申请人： Hank Cheng , Ming-Zhang Kuo , Chung-Cheng Chou
发明人： Hank Cheng , Ming-Zhang Kuo , Chung-Cheng Chou
IPC分类号： G11C7/00
CPC分类号： G11C7/00 , G11C7/20 , G11C8/08 , G11C11/413 , G11C2207/2254
摘要： A memory includes a capacitor coupled to a write bit line or a word line. An initializer is configured to initialize a voltage level at a first node between the capacitor and the write bit line or a word line. An initial level adjuster is configured to adjust a voltage level of a second node at one terminal of the capacitor. A pulse generator configured to supply a pulse to the initial level adjuster to control the initial level adjuster. A boost signal is configured to be supplied to a third node on the other terminal of the capacitor opposite the first node to boost a voltage level of the write bit line lower than ground or to boost a voltage level of the word line higher than a power supply voltage.
摘要翻译：存储器包括耦合到写位线或字线的电容器。初始化器被配置为初始化电容器和写位线或字线之间的第一节点处的电压电平。初始电平调节器被配置为调节电容器的一个端子处的第二节点的电压电平。脉冲发生器，被配置为向初始电平调节器提供脉冲以控制初始电平调节器。升压信号被配置为提供给与第一节点相对的电容器的另一个端子上的第三节点，以提高写入位线的低于地的电压电平，或将字线的电压电平提高到高于功率电源电压。

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