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    • 78. 发明授权
    • Optical integrated device manufacturing process and device manufactured by the process thereof
    • 光学集成器件制造工艺及其制造方法
    • US07590326B2
    • 2009-09-15
    • US12015199
    • 2008-01-16
    • Antonio FincatoUbaldo Mastromatteo
    • Antonio FincatoUbaldo Mastromatteo
    • G02B6/10H01L21/00B29D11/00
    • G02B6/4214G02B6/12002G02B6/12004G02B6/136G02B2006/12104
    • The invention relates to a process for manufacturing an integrated optical device comprising the deposition on a support substrate of a multilayer being formed by first and second cladding layers in order to hold in a multilayer first region a waveguide core layer. The core is provided with an electromagnetic radiation (L) inlet/outlet port. Furthermore, the process provides for the formation of a regulation layer having a first etching speed associated therewith, which is distinguished from the etching speeds of the cladding layers. Subsequently to an etching of a multilayer second region, a cavity is obtained having a first wall which is inclined relative to the substrate at least partially extending in said first region and which is near said inlet/outlet port. Such etching removes portions of the regulation layer and the cladding layers at different speeds in order to result in the formation of the inclined wall.
    • 本发明涉及一种用于制造集成光学器件的方法,其包括在第一和第二覆层形成的多层的支撑衬底上的沉积,以便在多层第一区域中保持波导芯层。 核心设有电磁辐射(L)入口/出口。 此外,该方法提供形成具有与其相关联的第一蚀刻速度的调节层,其与包覆层的蚀刻速度不同。 随后对多层第二区域的蚀刻,获得具有第一壁的空腔,所述第一壁相对于基板倾斜,所述第一壁在所述第一区域中至少部分地延伸并且在所述入口/出口附近。 这种蚀刻以不同的速度去除调节层和包覆层的部分,以便形成倾斜壁。