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71. 发明授权

US06675609B2 Refrigerant cycle system with ejector pump 失效
标题翻译：带喷射泵的制冷循环系统
公开(公告)号：US06675609B2
公开(公告)日：2004-01-13
申请号：US10350779
申请日：2003-01-23
申请人： Hirotsugu Takeuchi , Yasushi Yamanaka , Atsushi Inaba
发明人： Hirotsugu Takeuchi , Yasushi Yamanaka , Atsushi Inaba
IPC分类号： F25B106
CPC分类号： F25B27/02 , B60H2001/3298 , F25B1/08 , F25B1/10 , F25B6/04 , F25B9/008 , F25B2309/061 , F25B2341/0012 , F25B2341/0015 , F25B2400/075 , F25B2400/23 , Y02A30/274
摘要： In a refrigerant cycle system with an ejector pump, refrigerant to be introduced into a nozzle of the ejector pump is heated in a heat exchanger using waste heat from a vehicle engine as a heating source, and any one of a first mode, a second mode and a third mode can be selectively set based on a thermal load of an evaporator. In the first mode, refrigerant circulates from the evaporator toward a radiator only by the ejector pump. In the second mode, refrigerant circulate from the evaporator toward the radiator only by a compressor. Further, in the third mode, refrigerant circulates from the evaporator toward the radiator by using both the ejector pump and the compressor. Accordingly, the waste heat can be effectively recovered while a flow resistance of the refrigerant can be restricted.
摘要翻译：在具有喷射泵的制冷剂循环系统中，要引入喷射泵的喷嘴的制冷剂在热交换器中使用来自车辆发动机的余热作为加热源加热，并且第一模式，第二模式并且可以基于蒸发器的热负荷来选择性地设定第三模式。在第一模式中，制冷剂仅通过喷射泵从蒸发器向散热器循环。在第二模式中，制冷剂仅通过压缩机从蒸发器向散热器循环。此外，在第三模式中，制冷剂通过使用喷射泵和压缩机两者从蒸发器向散热器循环。因此，可以有效地回收废热，同时可以限制制冷剂的流动阻力。

72. 发明授权

US06397616B2 Pressure reducer and refrigerating cycle unit using the same 有权
标题翻译：减压器和制冷循环机组采用相同的
公开(公告)号：US06397616B2
公开(公告)日：2002-06-04
申请号：US09827069
申请日：2001-04-05
申请人： Kurato Yamasaki , Shigeki Ito , Teruyuki Hotta , Yasushi Yamanaka , Atsushi Inaba
发明人： Kurato Yamasaki , Shigeki Ito , Teruyuki Hotta , Yasushi Yamanaka , Atsushi Inaba
IPC分类号： F25B4106
CPC分类号： F25B41/06 , F25B2341/0662 , F25B2500/01
摘要： A variable restrict valve is disposed at the upstream side of a refrigerant flow, a fixed restrictor is disposed at the downstream side of the variable restrict valve, an intermediate space is provided between the variable restrict valve and the fixed restrictor, a passage sectional area of the intermediate space is set to be larger than the fixed restrictor and passage length L of the intermediate space is set to be larger than a predetermined length required when the flow of refrigerant injected from the variable restrict valve expands more than the passage sectional area of the fixed restrictor.
摘要翻译：可变限制阀设置在制冷剂流的上游侧，固定限制器设置在可变限制阀的下游侧，在可变限制阀和固定限制器之间设置有中间空间，通道截面积中间空间被设定为大于固定限制器，并且中间空间的通道长度L被设定为大于从可变限制阀喷射的制冷剂的流量比所述可变限制阀的通道截面积膨胀的规定长度固定限流器

73. 发明授权

US06188013B1 Solar cell 失效
标题翻译：太阳能电池
公开(公告)号：US06188013B1
公开(公告)日：2001-02-13
申请号：US09322958
申请日：1999-05-28
申请人： Atsushi Inaba , Katsuhiko Takebe , Yamato Ishikawa
发明人： Atsushi Inaba , Katsuhiko Takebe , Yamato Ishikawa
IPC分类号： H01L3100
CPC分类号： H01L31/0749 , H01L31/022425 , Y02E10/541
摘要： A solar cell comprising a substrate of insulating material, a bottom side electrode layer formed on one surface of the substrate, a semiconductor photoelectric conversion layer formed on the bottom side electrode layer, a transparent top side electrode layer formed on the semiconductor photoelectric conversion layer and a non-transparent electrode comprising a plurality of strips of non-transparent conductive layers disposed separately from each other on the top side transparent electrode layer. The solar cell further comprises an additional bottom side electrode layer formed on the opposite surface of the substrate and a plurality of conductive paths connecting the bottom side electrode layer to the additional bottom side electrode layer through holes or slits formed to penetrate the substrate.
摘要翻译：一种太阳能电池，包括绝缘材料基板，形成在所述基板的一个表面上的底侧电极层，形成在所述底侧电极层上的半导体光电转换层，形成在所述半导体光电转换层上的透明顶侧电极层和包括在顶侧透明电极层上彼此分开设置的多条非透明导电层的非透明电极。太阳能电池还包括形成在基板的相对表面上的另外的底侧电极层和通过形成为穿透基板的孔或狭缝连接底侧电极层和附加底侧电极层的多个导电路径。

74. 发明授权

US5945601A Acceleration sensor with temperature resistor elements 失效
标题翻译：带温度电阻元件的加速度传感器
公开(公告)号：US5945601A
公开(公告)日：1999-08-31
申请号：US20999
申请日：1998-02-09
申请人： Takashi Hosoi , Satoshi Hiyama , Sukeyuju Shinotuka , Mizuho Doi , Hiroshi Yamakawa , Nariaki Kuriyama , Tomoyuki Nishio , Atsushi Inaba , Nobuhiro Fueki
发明人： Takashi Hosoi , Satoshi Hiyama , Sukeyuju Shinotuka , Mizuho Doi , Hiroshi Yamakawa , Nariaki Kuriyama , Tomoyuki Nishio , Atsushi Inaba , Nobuhiro Fueki
IPC分类号： G01P15/00 , G01P15/12 , G01P15/18
CPC分类号： G01P15/18 , G01P15/008 , G01P15/12
摘要： A very small and economical acceleration sensor which can detect acting acceleration with high sensitivity and high accuracy by precisely processing a semiconductor substrate and the like by using the photoengraving technique in a semiconductor manufacturing process to accurately form the elements themselves such as a sensor case, a cavity, a heater, a temperature-sensing resistor element, and a heat-type temperature-sensing resistor element, and the relative placement of each element. One embodiment of the acceleration sensor can detect acceleration acting from any of the three-dimensional directions.
摘要翻译：一种非常小且经济的加速度传感器，其可以通过在半导体制造过程中通过使用照相雕刻技术精确地处理半导体衬底等来以高灵敏度和高精度检测作用加速度，以精确地形成元件本身，例如传感器外壳，空腔，加热器，温度感测电阻元件和热型温度感测电阻元件，以及每个元件的相对位置。加速度传感器的一个实施例可以检测从任何三维方向起作用的加速度。

75. 发明授权

US5610333A Semiconductor type gas rate sensor 失效
标题翻译：半导体式气体传感器
公开(公告)号：US5610333A
公开(公告)日：1997-03-11
申请号：US406328
申请日：1995-03-17
申请人： Takashi Hosoi , Atsushi Inaba , Mizuho Doi
发明人： Takashi Hosoi , Atsushi Inaba , Mizuho Doi
IPC分类号： G01C19/00 , G01P9/00
CPC分类号： G01P9/00
摘要： A semiconductor type gas rate sensor which is capable of accurately sensing with a sufficient sensitivity an angular velocity acting on its body made of semiconductor substrates having a nozzle port and a gas path etched therein with a pair of heat wires (heat-sensitive resistance elements) provided in the gas path, wherein an optimal flow of gas injected into the gas path through the nozzle port is ensured by designing the nozzle port of 300 to 1000 microns in width and of not less than 2 mm in length and providing the gas path at its downstream end with an outlet allowing the gas to flow straight out from the gas path therethrough.
摘要翻译：一种半导体型气体速率传感器，其能够以足够的灵敏度灵敏地感测由其上具有喷嘴端口和气体路径的半导体基板制成的其身体上的角速度，其中蚀刻有一对热丝（热敏电阻元件）设置在气体路径中，其中通过设计喷嘴端口，其宽度为300至1000微米且长度不小于2mm，并且将气体路径设置在其下游端具有允许气体从气体通道直接流出的出口。

76. 发明授权

US5476820A Method of manufacturing semiconductor gas rate sensor 失效
标题翻译：制造半导体气体速率传感器的方法
公开(公告)号：US5476820A
公开(公告)日：1995-12-19
申请号：US384786
申请日：1995-02-06
申请人： Nobuhiro Fueki , Atsushi Inaba , Nariaki Kuriyama
发明人： Nobuhiro Fueki , Atsushi Inaba , Nariaki Kuriyama
IPC分类号： G01C19/00 , G01F1/684 , H01L21/00 , H01L23/10
CPC分类号： G01P9/00 , G01F1/6845 , Y10S148/012 , Y10S148/073 , Y10T29/49085
摘要： A semiconductor gas rate sensor includes a base composed of a first semiconductor substrate and a second semiconductor substrate bonded thereto by a thermosetting adhesive layer deposited on a mating surface of the second semiconductor substrate, the base having a gas flow passage defined therein and a nozzle defined therein for injecting a gas flow into the gas flow passage, and a detector disposed in and extending across the gas flow passage for detecting a deflected state of the gas flow when an angular velocity acts on the base, the nozzle being formed between a recess defined in mating surface of the first semiconductor substrate and the mating surface of the second semiconductor substrate. To manufacture the semiconductor gas rate sensor, the first semiconductor substrate and the second semiconductor substrate are joined to each other with the thermosetting adhesive layer on the mating surface of the second semiconductor substrate, and thereafter, the first semiconductor substrate and the second semiconductor substrate are heated while the second semiconductor substrate is being kept underneath the first semiconductor substrate.
摘要翻译：半导体气体速率传感器包括由第一半导体衬底和第二半导体衬底构成的基底，第二半导体衬底通过沉积在第二半导体衬底的配合表面上的热固性粘合剂层与其结合，第二基底具有限定在其中的气体流动通道，其中用于将气流注入到所述气体流动通道中;以及检测器，其布置在所述气体流动通道中并在所述气体流动通道中延伸，用于当角速度作用在所述基座上时检测所述气流的偏转状态，所述喷嘴形成在限定在第一半导体衬底的配合表面和第二半导体衬底的配合表面上。为了制造半导体气体速率传感器，第一半导体衬底和第二半导体衬底通过第二半导体衬底的配合表面上的热固性粘合剂层彼此接合，此后，第一半导体衬底和第二半导体衬底是同时第二半导体衬底被保持在第一半导体衬底下方。

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