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71. 发明授权

US08420402B2 Compounds related to assays 有权
标题翻译：与测定相关的化合物
公开(公告)号：US08420402B2
公开(公告)日：2013-04-16
申请号：US13374995
申请日：2012-01-27
申请人： Jianjun He , Anita Hong , Qingheng Wang , Raman Khosrow Afshar , Ming Zhu , Vera Rakhmanova
发明人： Jianjun He , Anita Hong , Qingheng Wang , Raman Khosrow Afshar , Ming Zhu , Vera Rakhmanova
IPC分类号： C09B29/16 , G01N33/52 , C07D311/82 , C07D311/86 , C07D311/88
CPC分类号： C09B7/00 , Y10T436/18 , Y10T436/182
摘要： The present invention is generally directed to thiol quantitation assays, methods of performing the assays, and compounds used in the assays. It is more specifically directed to assays that include one or more disulfides and related molecules and methods. The disulfides contain a FRET pair.
摘要翻译：本发明一般涉及硫醇定量测定，进行测定的方法和用于测定中的化合物。更具体地涉及包括一种或多种二硫化物和相关分子和方法的测定。二硫化物含有FRET对。

72. 发明授权

US08304842B2 Interconnection structure for N/P metal gates 有权
标题翻译： N / P金属门互连结构
公开(公告)号：US08304842B2
公开(公告)日：2012-11-06
申请号：US12836106
申请日：2010-07-14
申请人： Han-Guan Chew , Ming Zhu , Lee-Wee Teo , Harry-Hak-Lay Chuang
发明人： Han-Guan Chew , Ming Zhu , Lee-Wee Teo , Harry-Hak-Lay Chuang
IPC分类号： H01L27/088 , H01L29/78
CPC分类号： H01L21/768 , H01L21/28088 , H01L21/823842 , H01L21/823871 , H01L29/4966 , H01L29/66545 , H01L29/66606 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： The disclosure relates to integrated circuit fabrication, and more particularly to an interconnection structure for N/P metal gates. An exemplary structure for an interconnection structure comprises a first gate electrode having a first portion of a first work-function metal layer under a first portion of a signal metal layer; and a second gate electrode having a second portion of the first work-function metal layer interposed between a second work-function metal layer and a second portion of the signal metal layer, wherein the second portion of the signal metal layer is over the second portion of the first work-function metal layer, wherein the second portion of the signal metal layer and the first portion of the signal metal layer are continuous, and wherein a maximum thickness of the second portion of the signal metal layer is less than a maximum thickness of the first portion of the signal metal layer.
摘要翻译：本公开涉及集成电路制造，更具体地涉及用于N / P金属栅极的互连结构。用于互连结构的示例性结构包括在信号金属层的第一部分下方具有第一功函数金属层的第一部分的第一栅极电极; 以及第二栅电极，其具有插入在第二功函数金属层和信号金属层的第二部分之间的第一功函金属层的第二部分，其中信号金属层的第二部分在第二部分之上的第一功函数金属层，其中信号金属层的第二部分和信号金属层的第一部分是连续的，并且其中信号金属层的第二部分的最大厚度小于最大厚度的信号金属层的第一部分。

73. 发明授权

US08129193B2 Thiol quantitation assays and related methods 有权
标题翻译：硫醇定量测定及相关方法
公开(公告)号：US08129193B2
公开(公告)日：2012-03-06
申请号：US12804739
申请日：2010-07-28
申请人： Jianjun He , Anita Hong , Qingzheng Wang , Raman Khosrow Afshar , Ming Zhu , Vera Rakhmanova
发明人： Jianjun He , Anita Hong , Qingzheng Wang , Raman Khosrow Afshar , Ming Zhu , Vera Rakhmanova
IPC分类号： G01N33/52 , C09B29/16 , C07D311/82 , C07D311/86 , C07D311/88
CPC分类号： C09B7/00 , Y10T436/18 , Y10T436/182
摘要： The present invention is generally directed to thiol quantitation assays, methods of performing the assays, and compounds used in the assays. It is more specifically directed to assays that include one or more disulfides and related molecules and methods. The disulfides contain a FRET pair.
摘要翻译：本发明一般涉及硫醇定量测定，进行测定的方法和用于测定中的化合物。更具体地涉及包括一种或多种二硫化物和相关分子和方法的测定。二硫化物含有FRET对。

74. 发明申请

US20120025309A1 OFFSET GATE SEMICONDUCTOR DEVICE 有权
标题翻译：偏移栅极半导体器件
公开(公告)号：US20120025309A1
公开(公告)日：2012-02-02
申请号：US12846457
申请日：2010-07-29
申请人： Chun-Hung Chen , Lee-Wee Teo , Ming Zhu , Bao-Ru Young , Harry Hak-Lay Chuang
发明人： Chun-Hung Chen , Lee-Wee Teo , Ming Zhu , Bao-Ru Young , Harry Hak-Lay Chuang
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/513 , H01L29/495
摘要： An offset gate semiconductor device includes a substrate and an isolation feature formed in the substrate. An active region is formed in the substrate substantially adjacent to the isolation feature. An interface layer is formed on the substrate over the isolation feature and the active region. A polysilicon layer is formed on the interface layer over the isolation feature and the active region. A trench being formed in the polysilicon layer over the isolation feature. The trench extending to the interface layer. A fill layer is formed to line the trench and a metal gate formed in the trench.
摘要翻译：偏移门半导体器件包括衬底和形成在衬底中的隔离特征。在基板上基本上与隔离特征相邻地形成有源区。在隔离特征和有源区上的衬底上形成界面层。在隔离特征和有源区上的界面层上形成多晶硅层。在隔离特征上形成在多晶硅层中的沟槽。沟槽延伸到界面层。形成填充层以在沟槽中形成沟槽和形成的金属栅极。

75. 发明申请

US20110201172A1 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20110201172A1
公开(公告)日：2011-08-18
申请号：US12706782
申请日：2010-02-17
申请人： Han-Guan CHEW , Ming Zhu , Lee-Wee Teo , Harry-Hak-Lay Chuang
发明人： Han-Guan CHEW , Ming Zhu , Lee-Wee Teo , Harry-Hak-Lay Chuang
IPC分类号： H01L21/762 , H01L21/311
CPC分类号： H01L21/3081 , H01L21/76232
摘要： The disclosure relates to integrated circuit fabrication, and more particularly to a method for fabricating a semiconductor device. An exemplary method for fabricating the semiconductor device comprises providing a substrate; forming pad oxide layers over a frontside and a backside of the substrate; forming hardmask layers over the pad oxide layers on the frontside and the backside of the substrate; and thinning the hardmask layer over the pad oxide layer on the frontside of the substrate.
摘要翻译：本公开涉及集成电路制造，更具体地涉及一种用于制造半导体器件的方法。用于制造半导体器件的示例性方法包括提供衬底; 在衬底的前侧和后侧形成衬垫氧化物层; 在衬底的前侧和后侧上的衬垫氧化物层上形成硬掩模层; 以及在衬底的前侧的衬垫氧化物层之上使硬掩模层变薄。

76. 发明申请

US20110193162A1 LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR WITH PARTIALLY UNSILICIDED SOURCE/DRAIN 有权
标题翻译：具有部分未硫化源/漏极的侧向扩散金属氧化物半导体晶体管
公开(公告)号：US20110193162A1
公开(公告)日：2011-08-11
申请号：US12701824
申请日：2010-02-08
申请人： Harry-Hak-Lay CHUANG , Lee-Wee Teo , Ming Zhu
发明人： Harry-Hak-Lay CHUANG , Lee-Wee Teo , Ming Zhu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66659 , H01L21/28079 , H01L21/28088 , H01L21/28185 , H01L29/41775 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/78
摘要： A method of fabricating a laterally diffused metal oxide semiconductor (LDMOS) transistor includes forming a dummy gate over a substrate. A source and a drain are formed over the substrate on opposite sides of the dummy gate. A first silicide is formed on the source. A second silicide is formed on the drain so that an unsilicided region of at least one of the drain or the source is adjacent to the dummy gate. The unsilicided region of the drain provides a resistive region capable of sustaining a voltage load suitable for a high voltage LDMOS application. A replacement gate process is performed on the dummy gate to form a gate.
摘要翻译：制造横向扩散的金属氧化物半导体（LDMOS）晶体管的方法包括在衬底上形成虚拟栅极。在虚拟栅极的相对侧上的衬底上形成源极和漏极。在源上形成第一硅化物。在漏极上形成第二硅化物，使得至少一个漏极或源极的非硅化区域与虚拟栅极相邻。漏极的非硅化区域提供能够承受适合于高电压LDMOS应用的电压负载的电阻区域。在虚拟栅极上执行替换栅极处理以形成栅极。

77. 发明申请

US20110084319A1 Method of fabricating a silicon tunneling field effect transistor (TFET) with high drive current 有权
标题翻译：制造具有高驱动电流的硅隧道场效应晶体管（TFET）的方法
公开(公告)号：US20110084319A1
公开(公告)日：2011-04-14
申请号：US12587511
申请日：2009-10-08
申请人： Ming Zhu , Shyue Seng Tan , Eng Huat Toh , Elgin Quek
发明人： Ming Zhu , Shyue Seng Tan , Eng Huat Toh , Elgin Quek
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/26586 , B82Y10/00 , H01L29/0895 , H01L29/7391 , H01L29/7606 , H01L29/7613
摘要： A method (and semiconductor device) of fabricating a TFET device provides a source region having at least a portion thereof positioned underneath a gate dielectric. In one embodiment, the TFET includes an N+ drain region and a P+ source region in a silicon substrate, where the N+ drain region is silicon and the P+ source region is silicon germanium (SiGe). The source region includes a first region of a first type (e.g., P+ SiGe) and a second region of a second type (undoped SiGe), where at least a portion of the source region is positioned below the gate dielectric. This structure decreases the tunneling barrier width and increases drive current (Id).
摘要翻译：制造TFET器件的方法（和半导体器件）提供了一个源极区，其源极区至少有一部分位于栅极电介质的下面。在一个实施例中，TFET在硅衬底中包括N +漏极区域和P +源极区域，其中N +漏极区域是硅并且P +源极区域是硅锗（SiGe）。源区包括第一类型的第一区域（例如，P + SiGe）和第二类型（未掺杂的SiGe）的第二区域，其中源极区域的至少一部分位于栅极电介质的下方。该结构降低了隧道势垒宽度并增加了驱动电流（Id）。

78. 发明申请

US20100297215A1 COMPOSITIONS AND METHODS FOR PROTECTING CELLS DURING CANCER CHEMOTHERAPY AND RADIOTHERAPY 有权
标题翻译：在癌症化疗和放射治疗期间保护细胞的组合物和方法
公开(公告)号：US20100297215A1
公开(公告)日：2010-11-25
申请号：US12463789
申请日：2009-05-11
申请人： William E. Fahl , Nalini Raghavachari , Ming Zhu , John A. Kink
发明人： William E. Fahl , Nalini Raghavachari , Ming Zhu , John A. Kink
IPC分类号： A61K9/127 , A61P35/00 , C12Q1/68 , A61K31/428 , A61K31/352 , A61K31/275 , A61K31/497 , A61K31/05 , A61K31/085
CPC分类号： A61K31/497 , A61K9/127 , A61K9/1272 , A61K35/36
摘要： Compositions, pharmaceutical preparations and methods are disclosed for protecting non-neoplastic cells from damage caused by cancer chemotherapeutic agents or radiation therapy, during the course of cancer therapy or bone marrow transplant. These are based on the use of chemoprotective inducing agents that induce or increase production of cellular detoxification enzymes in target cell populations. The compositions and methods are useful to reduce or prevent hair loss, gastrointestinal distress and lesions of the skin and oral mucosa that commonly occur in patients undergoing cancer therapy. Also disclosed is a novel assay system for identifying new chemoprotective inducing agents.
摘要翻译：公开了用于在癌症治疗或骨髓移植过程中保护非肿瘤细胞免受由癌症化学治疗剂或放射治疗引起的损伤的组合物，药物制剂和方法。这些是基于在靶细胞群体中诱导或增加细胞解毒酶的产生的化学保护诱导剂的用途。组合物和方法可用于减少或预防通常在经历癌症治疗的患者中发生的脱发，胃肠道窘迫和皮肤和口腔粘膜的损伤。还公开了用于鉴定新的化学保护诱导剂的新型测定系统。

79. 发明申请

US20090138071A1 Cardia Stent 审中-公开
标题翻译：贲门支架
公开(公告)号：US20090138071A1
公开(公告)日：2009-05-28
申请号：US12084470
申请日：2006-11-16
申请人： Yingsheng Cheng , Xing Zhou , Ming Zhu
发明人： Yingsheng Cheng , Xing Zhou , Ming Zhu
IPC分类号： A61F2/06
CPC分类号： A61F2/90 , A61F2/07 , A61F2/2412 , A61F2/2418 , A61F5/0076 , A61F2002/044 , A61F2230/0078 , A61F2250/0039
摘要： The present invention relates to a medical stent, and in particular to a cardia stent for treatment on the narrow carida of the oesophagus. The cardia stent according to the present invention is woven by wires of shape memory NiTi alloy. There is a drum-shaped locating port at its upper end, and a trumpet-shaped locating port at its lower end. The upper drum-shaped locating port is connected with the lower trumpet-shaped locating port by a supporting net tube. The remaining portions other than the drum-shaped locating port are coated with a membrane of medical flexible material that can be implanted into a human body. The cardia stent comprises at least an anti-reflux valve. The anti-reflux valve is of a triple-petal structure protruding downward that is made from a membrane of medical flexible material that can be implanted into a human body. The cardia stent has the advantages of: difficult to shift, matching with carida anatomy, high anti-reflux ability, easy operation, resisting the corrosion of gastric juice, and it can be used in expansion treatment on the narrow carida caused by variable reasons.
摘要翻译：医疗支架技术领域本发明涉及一种医用支架，特别是涉及一种用于在食道狭窄的假体上进行治疗的贲门支架。根据本发明的贲门支架由形状记忆NiTi合金的丝线编织。在其上端有一个鼓形定位口，在其下端有一个喇叭形定位口。上鼓形定位口通过支撑网管与下喇叭形定位口连接。鼓形定位口以外的其余部分涂有可植入人体的医用柔性材料膜。贲门支架至少包括一个抗回流阀。防回流阀具有向下突出的三瓣瓣结构，其由可植入人体的医用柔性材料的膜制成。贲门支架的优点是：难以移位，与carida解剖相符，抗反流能力强，操作方便，抵抗胃液腐蚀，可用于扩张治疗由于可变原因引起的狭窄carida。

80. 发明申请

US20050216669A1 Efficient data storage system 有权
标题翻译：高效的数据存储系统
公开(公告)号：US20050216669A1
公开(公告)日：2005-09-29
申请号：US11136263
申请日：2005-05-24
申请人： Ming Zhu , Kai Li , R. Patterson
发明人： Ming Zhu , Kai Li , R. Patterson
IPC分类号： G06F12/00
CPC分类号： G06F3/0619 , G06F3/0608 , G06F3/064 , G06F3/0641 , G06F3/065 , G06F3/0683 , G06F3/0689 , G06F11/1435 , G06F11/1453 , G06F11/1464
摘要： A method for storing data comprising is disclosed. The method comprises receiving a data stream comprising a plurality of data segments wherein each data segment is associated with an identifier. The method further determining using a subset of identifiers that are stored in a low latency memory whether a data segments has been previously stored and returning the identifier for the data segment in the event the data segment is determined to have been stored previously.
摘要翻译：公开了一种存储数据的方法。该方法包括接收包括多个数据段的数据流，其中每个数据段与标识符相关联。该方法进一步确定使用存储在低延迟存储器中的标识符的子集，无论数据段是否已经被预先存储，并且在先前已经确定数据段的事件中返回数据段的标识符。

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