会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 75. 发明授权
    • Electronic component for high frequency power amplification
    • 用于高频功率放大的电子元件
    • US07994860B2
    • 2011-08-09
    • US12565993
    • 2009-09-24
    • Kyoichi TakahashiKazuhiro KoshioSatoshi Tanaka
    • Kyoichi TakahashiKazuhiro KoshioSatoshi Tanaka
    • H03G3/30
    • H03G3/3047H03F1/30H03F3/195
    • An electronic component for high frequency power amplification realizes an improvement in switching spectrum characteristics. The gain of an amplifying NMOS transistor is controlled by a bias voltage on which a bias control voltage is reflected. Further, a threshold voltage compensator compensates for a variation in threshold voltage with variations in the manufacture of the amplifying NMOS transistor. The threshold voltage compensator includes an NMOS transistor formed in the same process specification as the amplifying NMOS transistor and converts a variation in current flowing through the NMOS transistor depending on the variation in the threshold voltage of the amplifying NMOS transistor to its corresponding voltage by a resistor to compensate for the bias voltage. It is thus possible to reduce variations in so-called precharge level brought to fixed output power in a region (0 dBm or less, for example) low in output power.
    • 用于高频功率放大的电子部件实现了开关频谱特性的改进。 放大NMOS晶体管的增益由反射偏置控制电压的偏置电压控制。 此外,阈值电压补偿器通过放大NMOS晶体管的制造变化来补偿阈值电压的变化。 阈值电压补偿器包括以与放大NMOS晶体管相同的处理规范形成的NMOS晶体管,并且根据放大NMOS晶体管的阈值电压的变化转换为通过NMOS晶体管的电流的变化,由电阻器 以补偿偏置电压。 因此,可以减少在输出功率低的区域(例如,0dBm以下)带来固定输出功率的所谓预充电电平的变动。