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71. 发明申请

US20060043258A1 Method of picking up sectional image of laser light 失效
标题翻译：拾取激光截面图像的方法
公开(公告)号：US20060043258A1
公开(公告)日：2006-03-02
申请号：US11178562
申请日：2005-07-12
申请人： Masayuki Jyumonji , Masakiyo Matsumura , Yukio Taniguchi , Masato Hiramatsu , Hiroyuki Ogawa , Noritaka Akita
发明人： Masayuki Jyumonji , Masakiyo Matsumura , Yukio Taniguchi , Masato Hiramatsu , Hiroyuki Ogawa , Noritaka Akita
IPC分类号： G02B7/04
CPC分类号： G02B27/40 , B23K26/705 , G01J1/04 , G01J1/0411 , G01J1/0448 , G01J1/4257 , G02B7/36
摘要： A knife edge is disposed at a height corresponding to a section on which a sectional image (light intensity distribution) is picked up in such a manner as to intercept a part of the section of the laser light. The knife edge is irradiated with the laser light, and the sectional image of the laser light is enlarged with an image forming optics, and is picked up by a CCD. While picking up the sectional image in this manner, focusing of the image forming optics is performed. Next, the knife edge is retracted from the optical path of the laser light, the laser light is allowed to enter the CCD via the image forming optics, and the sectional image of the laser light is picked up.
摘要翻译：刀刃设置在与截面图像（光强度分布）被拾取的部分相对应的高度处，以截取激光的一部分的一部分。用激光照射刀刃，用成像光学元件放大激光的截面图像，并用CCD拾取。以这种方式拾取截面图像时，执行成像光学元件的聚焦。接下来，刀刃从激光的光路缩回，允许激光经由图像形成光学器件进入CCD，并且拾取激光的截面图像。

72. 发明申请

US20060027809A1 Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film 审中-公开
标题翻译：包含半导体薄膜的半导体薄膜，其经受热处理以具有对准标记，用于半导体薄膜的结晶方法和用于半导体薄膜的结晶装置
公开(公告)号：US20060027809A1
公开(公告)日：2006-02-09
申请号：US11194607
申请日：2005-08-02
申请人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
发明人： Hiroyuki Ogawa , Noritaka Akita , Yukio Taniguchi , Masato Hiramatsu , Masayuki Jyumonji , Masakiyo Matsumura
IPC分类号： H01L29/76 , H01L23/544 , H01L29/04
CPC分类号： H01L21/02678 , H01L21/2026 , H01L21/268 , H01L23/544 , H01L27/1214 , H01L27/1285 , H01L27/1288 , H01L29/78675 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.
摘要翻译：促进在非晶或多晶膜中形成的再结晶区域的精确取向。形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记在结晶区域上的预定位置。

73. 发明申请

US20050217571A1 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus 失效
标题翻译：结晶装置，结晶方法，装置，光调制元件和显示装置
公开(公告)号：US20050217571A1
公开(公告)日：2005-10-06
申请号：US11087619
申请日：2005-03-24
申请人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
发明人： Yukio Taniguchi , Masayuki Jyumonji , Hiroyuki Ogawa
IPC分类号： C30B1/00 , C30B3/00 , C30B5/00 , C30B13/24 , C30B28/02 , H01L21/00
CPC分类号： C30B13/24 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1016
摘要： A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.
摘要翻译：第一光调制元件通过调制入射的第一光束的强度，将具有第一光强度分布的光束的非单晶物质照射在非单晶物质上，由此熔化物质。第二光调制元件通过调制入射的第二光束的强度，从而使该物质熔化，从而将具有第二光强分布的光束照射在该物质上。照射系统使得具有第二光强分布的光束在物质通过具有第一光强度分布的光束的照射而部分熔融的时段内进入物质的熔融部分。

74. 发明授权

US06855514B2 Method for detecting presence of microorganisms, and quantities of microorganisms 有权
标题翻译：用于检测微生物存在的方法和微生物的量
公开(公告)号：US06855514B2
公开(公告)日：2005-02-15
申请号：US09897105
申请日：2001-07-03
申请人： Hiroyuki Ogawa
发明人： Hiroyuki Ogawa
IPC分类号： G01N21/77 , C12M1/34 , C12Q1/04 , G01N21/78
CPC分类号： C12Q1/04 , C12M23/22 , C12M23/24 , C12M41/36
摘要： Fast microbial detection is accomplished without an indicator interfering with microorganism growth, without a culture medium degrading the performance of an indicator and without a color of test sample adversely effecting th microbial detection process. A container has a portion which accommodates a fluid culture medium, and has a portion which accommodates a CO2 indicator. A CO2 gas-permeable membrane isolates the CO2 indicator from the fluid culture medium. The test sample is added in the fluid culture medium and then the container is sealed. The determination of the presence of microorganisms is accomplished by verifying a color change of a CO2 indicator. The quantity of mircoorganisms is determined by measuring time from when the container is sealed until an indicator portion has a color change.
摘要翻译：快速微生物检测是在没有指示剂干扰微生物生长的情况下实现的，而没有培养基降解指示剂的性能，并且没有颜色的测试样品对微生物检测过程产生不利影响。容器具有容纳流体培养基的部分，并且具有容纳CO 2指示器的部分。 CO2气体渗透膜将CO2指示剂与流体培养基隔离。将测试样品加入流体培养基中，然后将容器密封。确定微生物的存在是通过验证CO 2指示剂的颜色变化来实现的。通过测量从容器密封到指示剂部分变色之间的时间来确定微生物数量。

75. 发明授权

US06784495B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06784495B2
公开(公告)日：2004-08-31
申请号：US10291081
申请日：2002-11-08
申请人： Jun Koyama , Hidehito Kitakado , Masataka Itoh , Hiroyuki Ogawa
发明人： Jun Koyama , Hidehito Kitakado , Masataka Itoh , Hiroyuki Ogawa
IPC分类号： H01L2701
CPC分类号： H01L27/12 , H01L27/1248 , H01L29/78603
摘要： The present invention has provided on a back channel side of the TFT a blocking layer that is formed by laminating a 50 nm to 100 nm thick silicon oxynitride film (A) and a 30 nm to 70 nm thick silicon oxynitride film (B). By forming a lamination structure of such silicon oxynitride films, not only can be the contaminations caused by impurities such as alkali metallic elements from the substrate prevented, but the fluctuations in the electrical characteristics of the TFT can be reduced.
摘要翻译：本发明在TFT的背沟侧提供了通过层叠50nm至100nm厚的氮氧化硅膜（A）和30nm至70nm厚的氮氧化硅膜（B）而形成的阻挡层。通过形成这种氮氧化硅膜的层压结构，不仅可以防止由来自基板的碱金属元素等杂质引起的污染，还可以降低TFT的电特性的波动。

76. 发明授权

US5817275A Steel plate having excellent corrosion resistance and sulfide stress cracking resistance 失效
标题翻译：钢板具有优异的耐腐蚀性和耐硫化物应力开裂性
公开(公告)号：US5817275A
公开(公告)日：1998-10-06
申请号：US408655
申请日：1995-03-21
申请人： Hiroyuki Ogawa , Hiroshi Tamehiro , Akihiko Takahashi , Hajime Ishikawa , Takuya Hara
发明人： Hiroyuki Ogawa , Hiroshi Tamehiro , Akihiko Takahashi , Hajime Ishikawa , Takuya Hara
IPC分类号： C22C38/00 , C22C38/20 , C22C38/24 , C22C38/28 , C22C38/38
CPC分类号： C22C38/28 , C22C38/20 , C22C38/24
摘要： A steel plate comprising by weight C: 0.01 to 0.1%, Si: 0.02 to 0.5%, Mn: 0.6 to 2.0%, P
摘要翻译： 1.一种钢板，其包含C：0.01〜0.1％，Si：0.02〜0.5％，Mn：0.6〜2.0％，P <0.020％，S <0.010％，O <0.005％，Cr：0.1〜0.5％：0.1〜1.0％，Al：0.005〜0.05％，Ca：0.0005〜0.005％，Mn，S，O各自的含量调节为满足式Mnx（S + O）= 1.5×10 -2和0.01〜0.1％的选自Nb，V和Ti中的至少一种，余量由Fe和不可避免的杂质组成。该钢板在含有二氧化碳气体和硫化氢的环境中具有优异的耐腐蚀性和耐硫化物应力开裂性。

77. 发明授权

US5620805A Alloy and multilayer steel tube having corrosion resistance in fuel combustion environment containing V, Na, S and Cl 失效
标题翻译：在V，Na，S和Cl的燃料燃烧环境中具有耐腐蚀性的合金和多层钢管
公开(公告)号：US5620805A
公开(公告)日：1997-04-15
申请号：US535120
申请日：1995-10-26
申请人： Hiroyuki Ogawa , Tetsuo Ishitsuka , Koichi Nose
发明人： Hiroyuki Ogawa , Tetsuo Ishitsuka , Koichi Nose
IPC分类号： C22C38/00 , B32B15/01 , C22C30/00 , C22C38/40 , C22C38/48 , B32B15/18 , C22C38/44
CPC分类号： B32B15/011 , C22C30/00 , Y10T428/12965 , Y10T428/12979
摘要： The present invention provides a highly corrosion-resistant steel tube for use as a steel tube for boilers, etc., used for installations where fossil fuel or combustible refuse is burnt as an energy source.An alloy which exhibits corrosion resistance in an environment where fuel containing V, Na, S and Cl is burnt, comprising up to 0.05% of C, 1.0 to 2.6% of Si, 0.02 to 0.5% of Mn, 20 to 28% of Cr, 24 to 36% of Ni, up to 4% of Mo, up to 0.4% of Nb, up to 0.05% of Al and the balance Fe and unavoidable impurities, and satisfying the following inequalities:Ni.gtoreq.(Cr+2Si+0.5Mo),Nb.gtoreq.8C,andMo(Cr-18).gtoreq.8,anda multilayer steel tube comprising said alloy as a liner and a standardized boiler steel tube as a base layer.
摘要翻译： PCT No.PCT / JP95 / 00382 Sec。 371 1995年10月26日第 102（e）日期1995年10月26日PCT 1995年3月8日PCT PCT。第WO95 / 24512号公报日期1995年9月14日本发明提供一种高耐腐蚀钢管，用作锅炉等的钢管，用于将化石燃料或可燃垃圾燃烧为能源的设施。在含有V，Na，S和Cl的燃料燃烧的环境中具有耐腐蚀性的合金，其包含高达0.05％的C，1.0至2.6％的Si，0.02至0.5％的Mn，20至28％的Cr ，24〜36％的Ni，高达4％的Mo，高达0.4％的Nb，至多0.05％的Al，余量为Fe和不可避免的杂质，满足以下不等式：Ni> / =（Cr + 2Si + 0.5Mo），Nb> / = 8C和Mo（Cr-18）> / = 8，以及包括所述合金作为衬里的多层钢管和标准化的锅炉钢管作为基层。

78. 发明授权

US5268056A Plasma surface treating method and apparatus 失效
标题翻译：等离子体表面处理方法和装置
公开(公告)号：US5268056A
公开(公告)日：1993-12-07
申请号：US991405
申请日：1992-12-16
申请人： Toshinori Kishi , Michiyoshi Nagashima , Fumiaki Ueno , Taro Nambu , Hiroyuki Ogawa
发明人： Toshinori Kishi , Michiyoshi Nagashima , Fumiaki Ueno , Taro Nambu , Hiroyuki Ogawa
IPC分类号： G03F7/42 , H01J37/32 , B44C1/22 , B29C37/00
CPC分类号： H01J37/32018 , G03F7/427 , H01J37/32027 , H01J37/32045 , H01J2237/3342
摘要： In a plasma surface treating method, a sample to be treated is supported on a first electrode within a vacuum vessel and a second electrode is caused to confront the first electrode. Active species of negative ions are then generated by means of a direct current glow discharge produced in an abnormal glow discharge region and are subsequently impinged upon a surface of the sample to induce a chemical reaction with the sample.
摘要翻译：在等离子体表面处理方法中，待处理样品被支撑在真空容器内的第一电极上，并且使第二电极与第一电极相对。然后通过在异常辉光放电区产生的直流辉光放电产生负离子的活性物质，随后撞击在样品的表面上以引起与样品的化学反应。

79. 发明授权

US5017246A Martensitic stainless steels excellent in corrosion resistance and stress corrosion cracking resistance and method of heat treatment of the steels 失效
标题翻译：耐腐蚀性和耐应力腐蚀开裂性优异的马氏体不锈钢和钢的热处理方法
公开(公告)号：US5017246A
公开(公告)日：1991-05-21
申请号：US487116
申请日：1990-03-02
申请人： Akihiro Miyasaka , Hiroyuki Ogawa
发明人： Akihiro Miyasaka , Hiroyuki Ogawa
IPC分类号： C22C38/00 , C21D6/00 , C22C38/38 , C22C38/50
CPC分类号： C22C38/38 , Y10S148/909
摘要： A high-strength martensitic stainless steel excellent in corrosion resistance and stress corrosion cracking resistance, the composition of which comprises: under 0.03% carbon, 1% or less silicon, 2.3-7.0% manganese, 8-14% chromium, 0.005-0.2% aluminum, 0.005-0.15% nitrogen, and the balance of iron except incidental elements. The stainless steel can contain nickel, molybdenum, tungsten, copper, vanadium, titanium, niobium, zirconium, tanatalum, hafnium, calcium and rare earth elements under the fixed conditions in addition to the above elements. Heat treatment of the stainless steel comprises: the step of austenitizing at temperatures of 920.degree. C. to 1,100.degree. C., the step of cooling at a cooling rate equal to or higher than the air cooling rate, the step of tempering at temperatures between 580.degree. C. and A.sub.cl point, and the step of cooling at a cooling rate equal to or higher than the air cooling rate.

80. 发明授权

US4966748A Methods of producing clad metals 失效
标题翻译：生产复合金属的方法
公开(公告)号：US4966748A
公开(公告)日：1990-10-30
申请号：US490704
申请日：1990-03-07
申请人： Akihiro Miyasaka , Hiroyuki Ogawa
发明人： Akihiro Miyasaka , Hiroyuki Ogawa
IPC分类号： B22F3/24 , B22F3/04 , B22F3/12 , B22F3/14 , B22F3/15 , B22F7/04 , B22F7/08 , C23C24/10
CPC分类号： C23C24/106 , B22F3/1266 , B22F7/08
摘要： A clad metal is produced by forming a layer of a dissimilar metal powder on the surface of a base metal by cold fixing the powder to the surface under pressure, densing only the surface and a subsurface area of the layer of the dissimilar metal powder by melting and immediately solidifying in a vacuum, compressing the layer of the dissimilar metal powder together with the base metal at a temperature not higher than the solidus-line temperature of the two dissimilar metals under a pressure of not lower than 300 kgf/cm.sup.2 (or 29.4 MPa) using a hot isostatic press, and hot working the layer of the dissimilar metal powder together with the base metal.

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