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    • 78. 发明授权
    • Semiconductor device, process for production of the semiconductor device, and display device equipped with the semiconductor device
    • 半导体装置,半导体装置的制造方法以及配备有该半导体装置的显示装置
    • US08975637B2
    • 2015-03-10
    • US13500023
    • 2010-09-21
    • Hiroshi MatsukizonoTomohiro KimuraHiroyuki Ogawa
    • Hiroshi MatsukizonoTomohiro KimuraHiroyuki Ogawa
    • H01L27/14G02F1/1362G02F1/133G02F1/1333H01L27/12
    • G02F1/1362G02F1/13318G02F1/13338H01L27/1214
    • A thin film diode (100A) includes a semiconductor layer (130) having first, second, and third semiconductor regions, a first insulating layer (122) formed on the semiconductor layer (130), and a second insulating layer (123) formed on the first insulating layer (122). The first semiconductor region (134A) contains an impurity of a first-conductivity type at a first concentration; the second semiconductor region (135A) contains an impurity of a second-conductivity type different from the first conductivity type at a second concentration; and the third semiconductor region (133A) contains the first-conductivity type impurity at a third concentration lower than the first concentration, or contains the second-conductivity type impurity at a third concentration lower than the second concentration. The first semiconductor region (134A) conforms to an aperture pattern in the second insulating layer (123), or the second semiconductor region (135A) conforms to an aperture pattern in the second insulating layer (123).
    • 薄膜二极管(100A)包括具有第一,第二和第三半导体区域的半导体层(130),形成在半导体层(130)上的第一绝缘层(122)和形成在第一绝缘层 第一绝缘层(122)。 第一半导体区域(134A)含有第一浓度的第一导电类型的杂质; 第二半导体区域(135A)在第二浓度下含有不同于第一导电类型的第二导电类型的杂质; 并且第三半导体区域(133A)含有比第一浓度低的第三浓度的第一导电型杂质,或者包含第二浓度低于第二浓度的第三浓度的第二导电型杂质。 第一半导体区域(134A)符合第二绝缘层(123)中的孔径图案,或者第二半导体区域(135A)符合第二绝缘层(123)中的孔径图案。
    • 79. 发明授权
    • Continuously variable transmission
    • 连续可变传动
    • US08784260B2
    • 2014-07-22
    • US12997050
    • 2009-12-02
    • Takahiro ShiinaAkira MurakamiHiroyuki OgawaDaisuke Tomomatsu
    • Takahiro ShiinaAkira MurakamiHiroyuki OgawaDaisuke Tomomatsu
    • F16H15/52
    • F16H15/52
    • A continuously variable transmission having a continuously variable transmission mechanism including an input member, an output member, and a rotary member sandwiched therebetween, transmitting torque between the input member and the output member by means of frictional forces generated by pushing the input member and the output member against the rotary member, and continuously varying a transmission gear ratio between the input member and the output member, an axial force generating portion which rotates in one direction to generate a first axial force for pushing one of the input member and the output member toward the other and rotates in the other direction to generate a second axial force opposite to the first force, and an opposite axial force transmitting portion for transmitting the second force to the other of the input member and the output member when the axial force generating portion generates the second force.
    • 一种无级变速器,具有无级变速传动机构,其包括输入部件,输出部件和夹在其间的旋转部件,通过将输入部件和输出部件的推压产生的摩擦力在输入部件与输出部件之间传递转矩 并且连续地改变所述输入构件和所述输出构件之间的传动齿轮比;轴向力产生部,其在一个方向上旋转以产生用于将所述输入构件和所述输出构件中的一个推向所述输出构件的第一轴向力 另一方向并沿另一方向旋转,产生与第一力相反的第二轴向力,以及相反的轴向力传递部,用于当轴向力产生部产生时将第二力传递到输入构件和输出构件中的另一个 第二个力量