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71. 发明申请

US20130148261A1 CONDUCTIVE PASTE FOR EXTERNAL ELECTRODE, MULTILAYER CERAMIC ELECTRONIC COMPONENT USING THE SAME, AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：用于外部电极的导电胶，使用其的多层陶瓷电子元件及其制造方法
公开(公告)号：US20130148261A1
公开(公告)日：2013-06-13
申请号：US13402397
申请日：2012-02-22
申请人： Hye Seong KIM , Kyu Ha Lee , Byung Jun Jeon , Hyun Hee Gu , Jae Young Park , Da Young Choi , Eun Joo Choi , Myung Jun Park , Chang Hoon Kim
发明人： Hye Seong KIM , Kyu Ha Lee , Byung Jun Jeon , Hyun Hee Gu , Jae Young Park , Da Young Choi , Eun Joo Choi , Myung Jun Park , Chang Hoon Kim
IPC分类号： H01G4/008 , H01G4/00 , H01B1/02
CPC分类号： H01B1/22 , H01G4/008 , H01G4/12
摘要： There are provided a conductive paste for an external electrode, a multilayer ceramic electronic component using the same, and a method of manufacturing the same. More particularly, there are provided a conductive paste for an external electrode including: a conductive metal powder; and a spherical glass frit having an average particle size of 0.05 to 3.0 μm, a multilayer ceramic electronic component using the same, and a method of manufacturing the same. According to the present invention, a spherical glass frit having fine particles may be applied at the time of preparing the conductive paste for an external electrode, thereby realizing external electrodes having excellent compactness at a low temperature and suppressing the occurrence of cracks, and thus, a multilayer ceramic electronic component having excellent reliability can be implemented.
摘要翻译：提供了一种用于外部电极的导电膏，使用其的多层陶瓷电子元件及其制造方法。更具体地，提供了一种用于外部电极的导电浆料，其包括：导电金属粉末; 以及平均粒径为0.05〜3.0μm的球状玻璃料，使用其的多层陶瓷电子部件及其制造方法。根据本发明，在制备外部电极用导电膏时，可以应用具有微细粒子的球状玻璃料，从而实现在低温下具有优异的紧密度的外部电极并抑制裂纹的发生，可以实现具有优异的可靠性的多层陶瓷电子部件。

72. 发明授权

US08229406B2 Method for providing a receiver's terminal with multimedia contents before a call is connected 有权
标题翻译：在呼叫连接之前向接收机的终端提供多媒体内容的方法
公开(公告)号：US08229406B2
公开(公告)日：2012-07-24
申请号：US12374780
申请日：2007-08-09
申请人： Won-Jun Lee , Seung-Ook Je , Su-Nyeon Kim , Jae-Young Park , Jin-Hong Kim
发明人： Won-Jun Lee , Seung-Ook Je , Su-Nyeon Kim , Jae-Young Park , Jin-Hong Kim
IPC分类号： H04W4/16
CPC分类号： H04L65/1069 , H04L65/1009 , H04W76/15
摘要： Disclosed is a method for providing a target mobile station with a multimedia content such as audio or video content before a call an originating mobile station attempted to connect is answered by the target mobile station. A mobile communication network protocol for multimedia transmission between a target mobile station and a network is established before a called party receives a call, so that multimedia such as images or moving pictures may be sent to the target mobile station before the called party answers the call. In this way, the called party is able to enjoy a multimedia service before the phone call is connected. Moreover, if the multimedia is an audio or moving picture about a calling party, the called party can identify the calling party based on the multimedia.
摘要翻译：公开了一种用于在目标移动台应答发起移动台尝试连接的呼叫之前向目标移动台提供诸如音频或视频内容的多媒体内容的方法。在被叫方接收呼叫之前，建立用于目标移动台和网络之间的多媒体传输的移动通信网络协议，从而在被叫方应答呼叫之前，诸如图像或运动图像的多媒体可以被发送到目标移动台。以这种方式，被叫方在连接电话之前能够享受多媒体业务。此外，如果多媒体是关于呼叫方的音频或运动图像，则被叫方可以基于多媒体识别主叫方。

73. 发明申请

US20120142159A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120142159A1
公开(公告)日：2012-06-07
申请号：US13242302
申请日：2011-09-23
申请人： Tae-Gon Kim , Sang-Bom Kang , Jae-Young Park , Kang-Hun Moon , Hyun-Jun Sim , Seung-Hun Lee , Han-Ki Lee , Hyun-Seung Kim
发明人： Tae-Gon Kim , Sang-Bom Kang , Jae-Young Park , Kang-Hun Moon , Hyun-Jun Sim , Seung-Hun Lee , Han-Ki Lee , Hyun-Seung Kim
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/26586 , H01L21/2257 , H01L21/26513 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Methods for fabricating a semiconductor device are provided wherein, in an embodiment, the method includes the steps of forming a gate electrode on a semiconductor substrate, forming a trench by recessing the semiconductor substrate in the vicinity of the gate electrode, doping an anti-diffusion ion into a portion of the semiconductor substrate in the trench, and growing an impurity-doped epitaxial layer on the semiconductor substrate doped with the anti-diffusion ion.
摘要翻译：提供了制造半导体器件的方法，其中在一个实施例中，该方法包括以下步骤：在半导体衬底上形成栅电极，通过在栅极附近凹入半导体衬底形成沟槽，掺杂抗扩散离子进入沟槽中的半导体衬底的一部分，并且在掺杂有抗扩散离子的半导体衬底上生长杂质掺杂的外延层。

74. 发明授权

US08125135B2 Field emission display device 失效
标题翻译：场致发射显示装置
公开(公告)号：US08125135B2
公开(公告)日：2012-02-28
申请号：US12786398
申请日：2010-05-24
申请人： Jung Won Yoo , Mi Sun Kim , Jae Young Park , Young Don Park
发明人： Jung Won Yoo , Mi Sun Kim , Jae Young Park , Young Don Park
IPC分类号： H01J1/62
CPC分类号： H01J31/127 , H01J29/467 , H01J2329/0413
摘要： A field emission display device (FED) is provided. The FED includes a first substrate, a phosphor layer being in contact with the first substrate, and an anode electrode on the phosphor layer. The FED further includes a second substrate facing the first substrate and including a cathode electrode and an emitter disposed toward the anode electrode.
摘要翻译：提供场致发射显示装置（FED）。 FED包括第一衬底，与第一衬底接触的荧光体层和磷光体层上的阳极电极。 FED还包括面向第一基板的第二基板，并且包括阴极电极和朝向阳极电极设置的发射极。

75. 发明授权

US08012823B2 Methods of fabricating stack type capacitors of semiconductor devices 有权
标题翻译：制造半导体器件堆叠型电容器的方法
公开(公告)号：US08012823B2
公开(公告)日：2011-09-06
申请号：US12453582
申请日：2009-05-15
申请人： Han-jin Lim , Jae-young Park , Young-jin Kim , Seok-woo Nam , Bong-hyun Kim , Kyoung-ryul Yoon , Jae-hyoung Choi , Beom-jong Kim
发明人： Han-jin Lim , Jae-young Park , Young-jin Kim , Seok-woo Nam , Bong-hyun Kim , Kyoung-ryul Yoon , Jae-hyoung Choi , Beom-jong Kim
IPC分类号： H01L21/8242 , H01L21/20
CPC分类号： H01L28/91 , H01L21/02189 , H01L21/0228 , H01L21/3141 , H01L21/31641
摘要： Provided are methods of fabricating capacitors of semiconductor devices, the methods including: forming a lower electrode on a semiconductor substrate, performing a pre-process operation on the lower electrode for suppressing deterioration of the lower electrode during a process, forming a dielectric layer on the lower electrode using a source gas and an ozone gas, and forming an upper electrode on the dielectric layer, wherein the pre-process operation and the forming of the dielectric layer may be performed in one device capable of atomic layer deposition.
摘要翻译：提供制造半导体器件的电容器的方法，其方法包括：在半导体衬底上形成下电极，在下电极上执行预处理操作，以抑制在工艺期间下电极的劣化，在电极上形成电介质层使用源气体和臭氧气体的下电极，以及在所述电介质层上形成上电极，其中所述电介质层的预处理操作和形成可以在能够进行原子层沉积的一个器件中进行。

76. 发明申请

US20110147698A1 FIELD EMISSION DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：场发射装置及其形成方法
公开(公告)号：US20110147698A1
公开(公告)日：2011-06-23
申请号：US12786411
申请日：2010-05-24
申请人： Jung Won YOO , Jae Young PARK , Young Don PARK , Soo Young PARK , Young Suk KIM
发明人： Jung Won YOO , Jae Young PARK , Young Don PARK , Soo Young PARK , Young Suk KIM
IPC分类号： H01L49/00
CPC分类号： H01J31/123 , H01J1/304 , H01J29/04 , H01J29/467 , H01J2329/4613 , H01J2329/4634
摘要： A field emission device is provided. The field emission device includes a first substrate including a gate electrode including gate lines respectively extending in first, second, and third direction and a cathode electrode including cathode lines respectively extending in the first, second, and third directions; a second substrate facing the first substrate and including an anode electrode; and a space between the first and second substrates.
摘要翻译：提供场致发射装置。场发射器件包括：第一衬底，包括包括分别在第一，第二和第三方向上延伸的栅极线的栅电极和包括分别沿第一，第二和第三方向延伸的阴极线的阴极; 面向所述第一基板并包括阳极电极的第二基板; 以及第一和第二基板之间的空间。

77. 发明授权

US07741222B2 Etch stop structure and method of manufacture, and semiconductor device and method of manufacture 有权
标题翻译：蚀刻止蚀结构及其制造方法，半导体器件及其制造方法
公开(公告)号：US07741222B2
公开(公告)日：2010-06-22
申请号：US11102849
申请日：2005-04-11
申请人： Young-Sub You , Jae-Young Park , Won-Shik Shin , Hyeon-Deok Lee , Ki-Vin Im , Seok-Woo Nam , Hun-Young Lim , Won-Jun Jang , Yong-Woo Hyung
发明人： Young-Sub You , Jae-Young Park , Won-Shik Shin , Hyeon-Deok Lee , Ki-Vin Im , Seok-Woo Nam , Hun-Young Lim , Won-Jun Jang , Yong-Woo Hyung
IPC分类号： H01L21/302
CPC分类号： H01L21/31116 , H01L28/91
摘要： An etch stop layer is formed over a first structure by depositing a metal oxide material over the first structure and annealing the deposited metal oxide material. A second structure is formed over the etch stop layer, and a formation is etched through the second structure using the etch stop layer as an etch stop.
摘要翻译：通过在第一结构上沉积金属氧化物材料并退火沉积的金属氧化物材料，在第一结构上形成蚀刻停止层。在蚀刻停止层上形成第二结构，并且使用蚀刻停止层作为蚀刻停止层，通过第二结构蚀刻形成。

78. 发明申请

US20100044834A1 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT 有权
标题翻译：静电放电保护电路
公开(公告)号：US20100044834A1
公开(公告)日：2010-02-25
申请号：US12536378
申请日：2009-08-05
申请人： Jae-Young Park , Jong-Kyu Song , San-Hong Kim
发明人： Jae-Young Park , Jong-Kyu Song , San-Hong Kim
IPC分类号： H01L27/06 , H01L21/8222
CPC分类号： H01L27/0259 , H01L27/0823
摘要： An electrostatic discharge (ESD) protection circuit includes a substrate, and a plurality of unit bipolar transistors formed in the substrate. Each of the plurality of unit bipolar transistors may include a first-conductivity-type buried layer formed in the substrate, a first-conductivity-type well formed over the first-conductivity-type buried layer, a second-conductivity-type well formed in the first-conductivity-type well, a first-conductivity-type vertical doping layer vertically formed from the surface of the substrate to the first-conductivity-type buried layer so as to surround the first-conductivity-type well, and a first-conductivity-type doping layer and a second conductivity-type doping layer formed in the second-conductivity-type well. The first-conductivity-type doping layer of any one of the adjacent unit bipolar transistors and the first-conductivity-type vertical doping layer of another one of the adjacent unit bipolar transistors may be connected to each other.
摘要翻译：静电放电（ESD）保护电路包括衬底和形成在衬底中的多个单位双极晶体管。多个单位双极晶体管中的每一个可以包括形成在基板中的第一导电型掩埋层，在第一导电型掩埋层上形成的第一导电型掩埋层，形成在第二导电型掩埋层中的第二导电型阱所述第一导电型阱，从所述基板的表面到所述第一导电型掩埋层，以包围所述第一导电型阱的方式垂直形成的第一导电型垂直掺杂层，导电型掺杂层和形成在第二导电型阱中的第二导电型掺杂层。相邻单位双极晶体管中的任一个的第一导电型掺杂层和另一个相邻单位双极晶体管的第一导电型垂直掺杂层可以彼此连接。

79. 发明授权

US07599723B2 Sliding opening and closing device and a portable terminal having the same 有权
标题翻译：滑动开闭装置和具有该开闭装置的便携式终端
公开(公告)号：US07599723B2
公开(公告)日：2009-10-06
申请号：US10569516
申请日：2004-08-25
申请人： Jun-Hong Lee , Jae-Young Park , Chun-Soo Park
发明人： Jun-Hong Lee , Jae-Young Park , Chun-Soo Park
IPC分类号： H04M1/00
CPC分类号： H04M1/0237 , H04M1/0227 , H04M1/0233 , H04M1/0247
摘要： Disclosed are a sliding opening and closing device and a portable terminal having the same. According to the first embodiment of the present invention, a slide plate is linked to a main plate to be slidable in one direction. Also, the main plate supports an elastic part so as to generate an elasticity power in one direction. A power transformation member receives the elasticity power of the elastic member, and transmits the elasticity power to the slide plate in the direction of the opening or the closing according to the position of the slide plate.
摘要翻译：公开了一种滑动开闭装置和具有该滑动开闭装置的便携式终端。根据本发明的第一实施例，滑动板连接到主板以沿一个方向滑动。此外，主板支撑弹性部分，以在一个方向上产生弹性力。功率变换构件接收弹性构件的弹性力，并且根据滑板的位置将弹性力沿着打开或关闭的方向传递到滑板。

80. 发明申请

US20090185303A1 Optical filter, method of manufacturing the same and plasma display device having the same 审中-公开
标题翻译：光学滤波器及其制造方法以及具有该滤波器的等离子体显示装置
公开(公告)号：US20090185303A1
公开(公告)日：2009-07-23
申请号：US12320093
申请日：2009-01-16
申请人： Do-Hyuk Kwon , Sung-Yong Lee , Cha-Won Hwang , Ji-Suk Kim , Sang-Mi Lee , Yong-Woo Jung , Jae-Young Park , Jang-Woo Lee , Jin-Young Lee , Chul-Ho Park , Chong-Gi Hong
发明人： Do-Hyuk Kwon , Sung-Yong Lee , Cha-Won Hwang , Ji-Suk Kim , Sang-Mi Lee , Yong-Woo Jung , Jae-Young Park , Jang-Woo Lee , Jin-Young Lee , Chul-Ho Park , Chong-Gi Hong
IPC分类号： G02B5/22 , B32B37/12
CPC分类号： H01J11/12 , H01J11/44 , H01J2211/444 , H01J2211/446 , Y10T156/10
摘要： An optical filter includes a support layer, absorption patterns on a first surface of the support layer, the absorption patterns having a predetermined interval therebetween, and adhesion members on the first surface of the support layer, the adhesion members being buried in the predetermined interval between the absorption patterns.
摘要翻译：光学滤波器包括支撑层，在支撑层的第一表面上的吸收图案，其间具有预定间隔的吸收图案，以及在支撑层的第一表面上的粘合构件，粘附构件以吸收图案。

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