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    • 74. 发明授权
    • Stacked electrical connector assembly with stable mating characteristic
    • 具有稳定配合特性的堆叠电连接器组件
    • US07410391B2
    • 2008-08-12
    • US11786227
    • 2007-04-11
    • Feng WanJin-Kui HuGuo-Hua Zhang
    • Feng WanJin-Kui HuGuo-Hua Zhang
    • H01R13/648
    • H01R27/02H01R12/716
    • An electrical connector assembly (100) mounted on a printed circuit board (PCB) includes an insulative housing (1) defining a pair of stacked receiving cavities (15, 16) for receiving a first and a second connector components (2, 3) therein, a holder (4) attached to the insulative housing and a metal shield enclosing the insulative housing. The holder (4) is fixed to a rear wall (14) of the insulative housing (1) and includes a vertical mating portion (41) and a pair of top and bottom portions (42, 43) extending backwardly from the mating portion. The top and bottom portions (42, 43) are parallel to each other wherein the top portion (42) is shorter than the bottom portion (43). An area of the top portion is smaller than that of the bottom portion.
    • 安装在印刷电路板(PCB)上的电连接器组件(100)包括限定一对堆叠的容纳空腔(15,16)的绝缘壳体(1),用于在其中容纳第一和第二连接器部件(2,3) ,附接到绝缘壳体的保持器(4)和包围绝缘壳体的金属屏蔽件。 保持器(4)固定在绝缘壳体(1)的后壁(14)上并且包括垂直配合部分(41)和从配合部分向后延伸的一对顶部和底部部分(42,43)。 顶部和底部部分(42,43)彼此平行,其中顶部部分(42)比底部部分(43)短。 顶部的面积小于底部的面积。
    • 75. 发明申请
    • Stacked electrical connector assembly with stable mating characteristic
    • 具有稳定配合特性的堆叠电连接器组件
    • US20070243757A1
    • 2007-10-18
    • US11786227
    • 2007-04-11
    • Feng WanJin-Kui HuGuo-Hua Zhang
    • Feng WanJin-Kui HuGuo-Hua Zhang
    • H01R13/66
    • H01R27/02H01R12/716
    • An electrical connector assembly (100) mounted on a printed circuit board (PCB) includes an insulative housing (1) defining a pair of stacked receiving cavities (15, 16) for receiving a first and a second connector components (2, 3) therein, a holder (4) attached to the insulative housing and a metal shield enclosing the insulative housing. The holder (4) is fixed to a rear wall (14) of the insulative housing (1) and includes a vertical mating portion (41) and a pair of top and bottom portions (42, 43) extending backwardly from the mating portion. The top and bottom portions (42, 43) are parallel to each other wherein the top portion (42) is shorter than the bottom portion (43). An area of the top portion is smaller than that of the bottom portion.
    • 安装在印刷电路板(PCB)上的电连接器组件(100)包括限定一对堆叠的容纳空腔(15,16)的绝缘壳体(1),用于在其中容纳第一和第二连接器部件(2,3) ,附接到绝缘壳体的保持器(4)和包围绝缘壳体的金属屏蔽件。 保持器(4)固定在绝缘壳体(1)的后壁(14)上并且包括垂直配合部分(41)和从配合部分向后延伸的一对顶部和底部部分(42,43)。 顶部和底部部分(42,43)彼此平行,其中顶部部分(42)比底部部分(43)短。 顶部的面积小于底部的面积。
    • 79. 发明授权
    • Double sided interdiffusion process and structure for a double layer
heterojunction focal plane array
    • 双层异质结焦平面阵列的双面相互扩散过程和结构
    • US5846850A
    • 1998-12-08
    • US706583
    • 1996-09-05
    • Peter D. DreiskeChang-Feng Wan
    • Peter D. DreiskeChang-Feng Wan
    • H01L27/146H01L31/18
    • H01L27/1465
    • This invention relates to a process and structure for performing a high temperature or other process on both sides of a thin slice of material or die prior to being placed onto a integrated circuit or multi-chip module. In a particular embodiment, a process and structure is given to provide for double sided interdiffusion for passivation of a Mercury Cadmium Telluride (MCT) film which is mounted to a read-out integrated circuit (ROIC) face side up in order to fabricate vertically integrated Focal Plane Arrays (FPAs) with reduced dark currents and improved performance. The process of the present invention also allows for the insertion of novel materials such as Double Layer Heterojunction (DLHJ), MBE, MOCVD, etc. in the vertical integrated approach to FPAs.
    • 本发明涉及一种用于在被放置在集成电路或多芯片模块上之前在薄片材料或管芯的两侧执行高温或其它工艺的工艺和结构。 在特定实施例中,提供了一种工艺和结构来提供用于钝化碲化汞碲化镉(MCT)膜的双面相互扩散,其将面向一侧的面向上安装到读出集成电路(ROIC),以制造垂直集成 焦平面阵列(FPA)具有降低的暗电流和改进的性能。 本发明的方法还允许在垂直集成方法中插入诸如双层异质结(DLHJ),MBE,MOCVD等的新型材料。
    • 80. 发明授权
    • In situ differential thermal analysis for HgCdTe LPE
    • HgCdTe LPE的原位差热分析
    • US4474640A
    • 1984-10-02
    • US326301
    • 1981-12-01
    • Chang-Feng Wan
    • Chang-Feng Wan
    • C30B19/02C30B19/10
    • C30B19/02C30B29/48
    • For HgCdTe liquid phase epitaxy (LPE), in situ differential thermal analysis apparatus is used to precisely monitor the liquidus temperature of each HgCdTe melt. The neutral body, e.g. a slug of copper enclosed in a silica ampoule, is placed near the LPE reactor in a furnace. During heating or cooling, differential sensing of a pair of thermocouples (in the melt and in the neutral body) will show an accelerated change at transformation points, since at these points the temperature of the melt will be changed by the energy of the physical change, while that of the neutral body remains subject only to passive heat transfer. Thus, the actual liquidus temperature of each melt can be measured with extreme precision, and isothermal or programmed cooling methods of LPE can be precisely and reliably controlled under production conditions.
    • 对于HgCdTe液相外延(LPE),使用原位差分热分析仪器精确监测每个HgCdTe熔体的液相线温度。 中性体,例如 将封闭在二氧化硅安瓿中的铜块放置在炉中的LPE反应器附近。 在加热或冷却过程中,一对热电偶(在熔体和中性体中)的差分感应将在相变点显示出加速的变化,因为在这些点上,熔体的温度将被物理变化的能量所改变 ,而中性身体的物体仍然只受到被动热传递。 因此,可以极精度地测量每个熔体的实际液相线温度,并且可以在生产条件下精确可靠地控制LPE的等温或程序冷却方法。