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61. 发明申请

US20100149723A1 METHOD AND STRUCTURE FOR CREATION OF A METAL INSULATOR METAL CAPACITOR 有权
标题翻译：金属绝缘子金属电容器的制造方法与结构
公开(公告)号：US20100149723A1
公开(公告)日：2010-06-17
申请号：US12706834
申请日：2010-02-17
申请人： EBENEZER E. ESHUN , RONALD J. BOLAM , DOUGLAS D. COOLBAUGH , KEITH E. DOWNES , NATALIE B. FEILCHENFELD , ZHONG-XIANG HE
发明人： EBENEZER E. ESHUN , RONALD J. BOLAM , DOUGLAS D. COOLBAUGH , KEITH E. DOWNES , NATALIE B. FEILCHENFELD , ZHONG-XIANG HE
IPC分类号： H01G4/10 , H01G4/06 , H01G4/008
CPC分类号： H01L28/60
摘要： The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comprises a protective layer on an insulator which is on a conductive layer.
摘要翻译：本发明涉及一种改进的电容器，其减少边缘缺陷并防止产量失效。本发明的第一实施例包括与导电层与绝缘体的界面相邻的保护层，而本发明的第二实施例包括位于导电层上的绝缘体上的保护层。

62. 发明申请

US20100014212A1 CAPACITOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：电容器及其制造方法
公开(公告)号：US20100014212A1
公开(公告)日：2010-01-21
申请号：US12569769
申请日：2009-09-29
申请人： Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
发明人： Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
IPC分类号： H01G4/10 , B32B37/14 , B05D5/12
CPC分类号： H01L21/02189 , H01L21/02178 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3162 , H01L21/31641 , H01L28/40 , H01L28/56
摘要： A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.
摘要翻译：电容器包括下电极，下电极上的电介质结构，包括至少一个结晶的氧化锆ZrO 2的电介质结构）层和至少一个非晶形氧化铝（Al 2 O 3）层，以及形成在电介质结构上的上电极。一种制造电容器的方法包括在一定结构上形成下电极，在下电极上形成包括至少一个结晶氧化锆（ZrO 2）层和至少一个非晶形氧化铝（Al 2 O 3）层的电介质结构，介电结构上的上电极。

63. 发明申请

US20080236878A1 Thin film capacitor, thin film capacitor-embedded printed circuit board and manufacturing method of thin film capacitor 有权
标题翻译：薄膜电容器，薄膜电容器嵌入式印刷电路板以及薄膜电容器的制造方法
公开(公告)号：US20080236878A1
公开(公告)日：2008-10-02
申请号：US12076989
申请日：2008-03-26
申请人： Seung Eun Lee , Yul Kyo Chung , Jung Won Lee , In Hyung Lee , Byung Ik Song
发明人： Seung Eun Lee , Yul Kyo Chung , Jung Won Lee , In Hyung Lee , Byung Ik Song
IPC分类号： H05K1/18 , H01G4/10 , H01G7/00
CPC分类号： H05K1/162 , H01G4/105 , H01G4/33 , H05K2201/0175 , H05K2201/0179 , Y10T29/435
摘要： There is provided a thin film capacitor and a capacitor-embedded printed board improved in leakage current characteristics. A dielectric layer is formed of a BiZnNb-based amorphous metal oxide with a predetermined dielectric constant without being heat treated at a high temperature, and metallic phase bismuth of the BiZnNb-based amorphous metal oxide is adjusted in content to attain a desired dielectric constant. Also, another dielectric layer having a different content of metallic phase bismuth may be formed. The thin film capacitor including: a first electrode; a dielectric layer including a first dielectric film formed on the first electrode, the dielectric layer comprising a BiZnNb-based amorphous metal oxide; and a second electrode formed on the dielectric layer, wherein the BiZnNb-based amorphous metal oxide contains metallic phase bismuth.
摘要翻译：提供了薄膜电容器和电容器嵌入式印刷电路板，改善了漏电流特性。电介质层由具有预定介电常数的BiZnNb基非晶态金属氧化物形成，而不在高温下进行热处理，并且将BiZnNb基非晶态金属氧化物的金属相铋的含量调节到所需的介电常数。此外，可以形成具有不同金属相铋含量的另一介质层。所述薄膜电容器包括：第一电极; 介电层，包括形成在所述第一电极上的第一电介质膜，所述电介质层包含BiZnNb基非晶态金属氧化物; 以及形成在所述电介质层上的第二电极，其中所述BiZnNb基非晶态金属氧化物含有金属相铋。

64. 发明申请

US20070236866A1 Dielectric element and method for manufacturing same 有权
标题翻译：介电元件及其制造方法
公开(公告)号：US20070236866A1
公开(公告)日：2007-10-11
申请号：US11602981
申请日：2006-11-22
申请人： Tomohiko Katoh , Kenji Horino
发明人： Tomohiko Katoh , Kenji Horino
IPC分类号： H01G4/10
CPC分类号： H01G4/33 , H01G4/008 , H01L28/55 , Y10T29/413 , Y10T29/435 , Y10T29/49128
摘要： A method for manufacturing a dielectric element including the steps of: preparing a lower electrode; forming a dielectric on the lower electrode to fabricate a first laminated structure; annealing the first laminated structure; forming an upper electrode on a dielectric film to fabricate a second laminated structure; and annealing the second laminated structure under a reduced pressure atmosphere at a temperature of 150° C. or higher.
摘要翻译：一种制造电介质元件的方法，包括以下步骤：制备下电极; 在下电极上形成电介质以制造第一层压结构; 退火第一层压结构; 在电介质膜上形成上电极以制造第二叠层结构; 并在150℃或更高的温度的减压气氛下退火第二层压结构。

65. 发明申请

US20060221549A1 Solid electrolytic capacitor and manufacturing method thereof 有权
标题翻译：固体电解电容器及其制造方法
公开(公告)号：US20060221549A1
公开(公告)日：2006-10-05
申请号：US11336787
申请日：2006-01-23
申请人： Takahisa Iida , Mutsumi Yano , Mamoru Kimoto
发明人： Takahisa Iida , Mutsumi Yano , Mamoru Kimoto
IPC分类号： H01G4/10 , H01G9/042 , H01G9/07 , H01G9/15
CPC分类号： H01G9/042 , H01G9/022 , H01G11/48 , Y02E60/13 , Y10T29/417
摘要： In this solid electrolytic capacitor, a plate-shaped anode having a porous sintered body, a dielectric layer and an electrolyte layer of polypyrrole are formed in this order for covering one part of an anode lead. An intermediate layer of aminopropyltriethoxysilane (APTES) is formed for covering the electrolyte layer. A cathode having a first conductive layer containing graphite particles and a second conductive layer containing silver particles is formed for covering the intermediate layer. The cathode and a cathode terminal are connected by a conductive adhesive layer. The anode lead and the anode terminal are connected by welding. Further, a mold outer resin is formed to allow one end of the cathode terminal and one end of the anode terminal to project therefrom.
摘要翻译：在该固体电解电容器中，依次形成具有多孔烧结体，电介质层和聚吡咯的电解质层的板状阳极，以覆盖阳极引线的一部分。形成氨基丙基三乙氧基硅烷（APTES）的中间层以覆盖电解质层。形成具有包含石墨颗粒的第一导电层和含有银颗粒的第二导电层的阴极，用于覆盖中间层。阴极和阴极端子通过导电粘合剂层连接。阳极引线和阳极端子通过焊接连接。此外，形成模制外部树脂，以允许阴极端子的一端和阳极端子的一端从其突出。

66. 发明授权

US06930875B2 Multi-layered unit 有权
标题翻译：多层单位
公开(公告)号：US06930875B2
公开(公告)日：2005-08-16
申请号：US10460763
申请日：2003-06-12
申请人： Yukio Sakashita
发明人： Yukio Sakashita
IPC分类号： H01G4/10 , H01L21/02 , H01L21/316 , H01G4/228
CPC分类号： H01G4/10 , H01L21/02197 , H01L21/02293 , H01L21/31691 , H01L28/55 , H01L28/65
摘要： A multi-layered unit according to the present invention includes a support substrate formed of a material which has conductivity and on which a dielectric material containing a bismuth layer structured compound can be epitaxially grown, at least the surface thereof being oriented in the [001] direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the support substrate and formed of a dielectric material containing a bismuth layer structured compound oriented in the [001] direction. Since the thus constituted multi-layered unit includes the dielectric layer containing a bismuth layer structured compound oriented in the c axis direction, in the case of, for example, providing an upper electrode on the dielectric layer to form a thin film capacitor and applying a voltage between the electrode layer and the upper electrode, the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound contained in the dielectric layer. As a result, since the ferroelectric property of the bismuth layer structured compound contained in the dielectric layer can be suppressed and the paraelectric property thereof can be fully exhibited, it is possible to fabricate a thin film capacitor having a small size, large capacitance and an excellent dielectric characteristic.
摘要翻译：根据本发明的多层单元包括由具有导电性的材料形成的支撑衬底，并且其上可以外延生长含有铋层结构化合物的电介质材料，至少其表面取向为[001] 方向，以及通过在支撑基板上外延生长含有铋层结构化合物的电介质材料形成的电介质层，并由包含沿[001]方向取向的铋层结构化合物的电介质材料形成。由于如此构成的多层单元包括在c轴方向上包含铋层结构化合物的电介质层，例如在电介质层上设置上电极以形成薄膜电容器并施加电极层与上部电极之间的电压，电场方向基本上与包含在电介质层中的铋层结构化合物的c轴重合。结果，由于可以抑制包含在电介质层中的铋层结构化合物的铁电性能并且可以充分发挥其顺电特性，所以可以制造具有小尺寸，大电容的薄膜电容器和优良的介电特性。

67. 发明申请

US20050141169A1 Capacitor device, electronic parts packaging structure, and method of manufacturing the capacitor device 有权
标题翻译：电容器件，电子元件封装结构以及电容器器件的制造方法
公开(公告)号：US20050141169A1
公开(公告)日：2005-06-30
申请号：US11020062
申请日：2004-12-23
申请人： Tomoo Yamasaki
发明人： Tomoo Yamasaki
IPC分类号： H01G4/008 , H01G4/10 , H01G4/228 , H01G4/33 , H01G4/38 , H01G13/00 , H01G13/06 , H01L21/822 , H01L23/498 , H01L23/50 , H01L27/04 , H05K1/16 , H05K1/18
CPC分类号： H05K1/162 , H01G4/10 , H01G4/38 , H01L23/49816 , H01L23/50 , H01L2224/16 , H01L2924/01019 , H01L2924/01078 , H01L2924/01079 , H01L2924/09701 , H01L2924/15311 , H01L2924/3011 , H05K2201/0191 , H05K2201/09509 , H05K2203/0315 , H05K2203/1476 , Y10T29/417 , Y10T29/43 , Y10T29/435
摘要： In a capacitor device of the present invention includes a substrate, a plurality of lower electrodes formed on the substrate, a plurality of dielectric films formed on a plurality of lower electrodes respectively in a state that the dielectric films are separated mutually, and upper electrodes formed on a plurality of dielectric films respectively, a plurality of capacitors each composed of the lower electrode, the dielectric film, and the upper electrode are arranged on the substrate respectively, and each of the dielectric films in a plurality of capacitors has a different film thickness.
摘要翻译：在本发明的电容器装置中，包括基板，形成在基板上的多个下电极，分别在电介质膜相互分离的状态下分别形成在多个下电极上的多个电介质膜，形成上电极在多个电介质膜上分别配置有分别由下部电极，电介质膜和上部电极构成的多个电容器，多个电容器中的各个电介质膜具有不同的膜厚。

68. 发明申请

US20050141168A1 CAPACITOR WITH ALUMINUM OXIDE AND LANTHANUM OXIDE CONTAINING DIELECTRIC STRUCTURE AND FABRICATION METHOD THEREOF 失效
标题翻译：含有氧化铝和含氧化铝氧化物的电容器及其制造方法
公开(公告)号：US20050141168A1
公开(公告)日：2005-06-30
申请号：US10880372
申请日：2004-06-30
申请人： Kee-Jeung Lee , Hong Kwon
发明人： Kee-Jeung Lee , Hong Kwon
IPC分类号： H01G4/10 , H01G4/20 , H01G4/228 , H01L21/02 , H01L21/316 , H01L21/8242
CPC分类号： H01G4/20 , H01G4/10 , H01L21/02178 , H01L21/02192 , H01L21/022 , H01L21/02271 , H01L21/0228 , H01L21/31604 , H01L21/31616 , H01L27/10852 , H01L28/40 , H01L28/65 , H01L28/91
摘要： Disclosed is a capacitor with a dielectric structure having an aluminum oxide layer and a lanthanum oxide layer and a fabrication method thereof. The capacitor includes: a lower electrode; a first dielectric layer with a high energy band gap formed on the lower electrode; a second dielectric layer formed on the first dielectric layer, the second dielectric layer with a high dielectric constant, wherein an energy band gap of the second dielectric layer is lower than the energy band gap of the first dielectric layer; and an upper electrode formed on the second dielectric layer.
摘要翻译：公开了具有氧化铝层和氧化镧层的电介质结构的电容器及其制造方法。电容器包括：下电极; 在下电极上形成具有高能带隙的第一电介质层; 形成在第一电介质层上的第二电介质层，具有高介电常数的第二电介质层，其中第二电介质层的能带隙低于第一介电层的能带隙; 以及形成在第二介电层上的上电极。

69. 发明授权

US06906909B2 A C capacitor 有权
标题翻译： C电容
公开(公告)号：US06906909B2
公开(公告)日：2005-06-14
申请号：US10691236
申请日：2003-10-23
申请人： John E. Stauffer
发明人： John E. Stauffer
IPC分类号： H01G4/06 , H01G4/10 , H01G4/20 , H01G4/30 , H01G4/35 , H01G7/06
CPC分类号： H01G4/20 , H01G4/10 , H01G7/06
摘要： An electrical capacitor is disclosed that includes a mixture of electrically conductive particles and non-conductive particles placed between two parallel conductive plates. The electrically conductive particles are also magnetic. By exposing the mixture of particles to a magnetic field, the electrically conductive particles have been oriented to provide a conductive network.
摘要翻译：公开了一种电容器，其包括放置在两个平行导电板之间的导电颗粒和非导电颗粒的混合物。导电颗粒也是磁性的。通过将颗粒的混合物暴露于磁场，导电颗粒已被定向以提供导电网络。

70. 发明申请

US20050000071A1 Manufacture of solid state electornic components 失效
标题翻译：固态电极组件的制造
公开(公告)号：US20050000071A1
公开(公告)日：2005-01-06
申请号：US10478839
申请日：2002-05-24
申请人： David Huntington
发明人： David Huntington
IPC分类号： H01G9/26 , H01C17/00 , H01G20060101 , H01G4/012 , H01G4/10 , H01G4/38 , H01G9/00 , H01G9/032 , H01G9/15 , H01G13/00
CPC分类号： H01G9/0029 , H01G9/15 , H01G9/26 , Y10T29/417 , Y10T29/435 , Y10T29/49002
摘要： The present invention concerns the field of the manufacture of solid state components, and in preferred embodiments, capacitors. The method relates particularly to massed production methods for manufacturing solid state components, such as capacitors. According to one aspect of the present invention there is provided a method of manufacturing multiple solid state electronic components comprising: (i) providing a first substrate provided with a plurality of first solid state electronic component elements formed on a surface e thereof, (ii) providing a second substrate provided with a plurality of second sold state electronic component elements formed on a surface thereof, (iii) aligning the first and second substrates so that respective first and second component elements are each mutually aligned, (iv) fixing the first and second substrates together, so that the first and second elements are operatively connected one to another, thereby to form a substrate sandwich, (v) dividing the substrate sandwich to form a plurality of individual components, each comprising a first component element cooperatively connected to a second component element. Suitable types of component are capacitors, diodes and resistors, although this list is not exhaustive and other suitable components are available to be made using this method.
摘要翻译：本发明涉及固体组分的制造领域，并且在优选实施方案中涉及电容器。该方法特别涉及用于制造诸如电容器的固态部件的批量生产方法。根据本发明的一个方面，提供一种制造多个固态电子部件的方法，包括：（i）提供设置有形成在其表面e上的多个第一固态电子部件元件的第一基板，（ii）提供设置有形成在其表面上的多个第二销售状态电子元件元件的第二基板，（iii）使第一和第二基板对齐，使得相应的第一和第二元件各自相互对齐，（iv）固定第一和第二基板第二基板在一起，使得第一和第二元件可操作地彼此连接，从而形成基板夹层，（v）将基板夹层隔开以形成多个单独的部件，每个部件包括与第一部件元件协作地连接的第一部件元件第二组成元素。组件的合适类型是电容器，二极管和电阻器，尽管这个列表并不详尽，并且使用这种方法可以使用其他合适的组件。

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