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61. 发明授权

US5833941A Raw material for producing powder of indium-tin oxide aciculae and method of producing the raw material, powder of indium-tin oxide aciculae and method of producing the powder, electroconductive paste and light-transmitting electroconductive film 失效
公开(公告)号：US5833941A
公开(公告)日：1998-11-10
申请号：US659821
申请日：1996-06-07
申请人： Masaya Yukinobu , Morikazu Kojima , Mitsuo Usuba
发明人： Masaya Yukinobu , Morikazu Kojima , Mitsuo Usuba
IPC分类号： C01G15/00 , C01G19/00 , C09D5/24 , H01B1/08 , H01B1/14 , H05K1/09 , C01F3/00
CPC分类号： C01G15/00 , C01G19/00 , C09D5/24 , H01B1/08 , H01B1/14 , C01P2002/10 , C01P2004/10 , H05K1/092
摘要： Disclosed are a powder of indium-tin oxide aciculae suitable as an electroconductive filler for an electroconductive ink to be used for forming a transparent electroconductive film, a method for producing a raw material to be used for producing the powder of indium-tin oxide aciculae, which has a major diameter of 5 .mu.m or more and a ratio of the major diameter to the minor diameter of 5 or more, an electroconductive paste capable of forming a light-transmitting electroconductive film having sufficient electroconductivity and light transmittance by printing, such as screen-printing, followed by high-temperature baking, and a light-transmitting electroconductive film to be formed from the paste. The raw material is produced by heating and concentrating an aqueous solution containing indium ions and nitrato ions to form a high-viscosity slurry followed by separating a powder of aciculae from the slurry. By calcining the raw material, a powder of indium-tin oxide aciculae is produced.

62. 发明授权

US5762768A Target for cathodic sputtering and method for producing the target 失效
标题翻译：阴极溅射靶材及靶材制造方法
公开(公告)号：US5762768A
公开(公告)日：1998-06-09
申请号：US693988
申请日：1996-08-08
申请人： Karl-Heinz Goy , David Francis Lupton , Jorg Schielke , Friedhold Scholz , Bernard Serole , Hans Bohmeier
发明人： Karl-Heinz Goy , David Francis Lupton , Jorg Schielke , Friedhold Scholz , Bernard Serole , Hans Bohmeier
IPC分类号： C01G15/00 , C01G19/02 , C04B35/01 , C23C14/08 , C23C14/34 , H01B1/16 , C04B35/46
CPC分类号： C04B35/01 , C23C14/086 , C23C14/3414
摘要： The targets for cathodic sputtering according to this invention are formed of hot-pressed or hot isostatic-pressed indium oxide/tin oxide powder with a minimum density of 95% of the theoretical density and with a sub-stoichiometric oxygen content are known. In order to provide the improvement of high stability and, simultaneously, high sputtering rate, it is proposed according to the invention that the target have a crystalline phase which is formed as a solid solution of indium oxide and tin oxide with a minimum of 90% by weight, preferably a minimum of 97%, of the solid solution, and which has an average grain size ranging from 2 .mu.m to 20 .mu.m. In order to make available a simple and cost-efficient method for producing a target consisting of a starting powder of indium oxide/tin oxide, which allows for a precise setting of the oxygen content and a homogeneous chemical composition throughout the entire target volume, it is proposed that a starting powder be used that is produced by oxidizing finely distributed indium tin metal.
摘要翻译：根据本发明的阴极溅射靶是由理论密度最低密度为95％，亚化学计量氧含量的热压或热等静压氧化铟/氧化锡粉末形成的。为了提供高稳定性和同时具有高溅射速率的提高，根据本发明提出，靶具有形成为氧化铟和氧化锡的固溶体的结晶相，其中至少90％，优选为97％以下，平均粒径为2μm〜20μm。为了提供一种用于制备由氧化铟/氧化锡的起始粉末组成的靶的简单和成本有效的方法，其允许在整个靶体积上精确设定氧含量和均匀的化学组成，提出使用通过氧化细分散的铟锡金属制备的起始粉末。

63. 发明授权

US5723027A Method for preparing a powder in a plasma arc and device for carrying out said method 失效
标题翻译：在等离子体电弧中制备粉末的方法和用于实施所述方法的装置
公开(公告)号：US5723027A
公开(公告)日：1998-03-03
申请号：US640756
申请日：1996-05-07
申请人： Bernard Serole
发明人： Bernard Serole
IPC分类号： C01B13/28 , B01J19/08 , C01G15/00 , C01G19/02 , C01G21/06
CPC分类号： B01J19/088
摘要： A method for the continuous preparation of a powder by reacting at least two reagents in a plasma arc, in which a first and a second reagent are fed to the plasma arc, which is maintained by a voltage applied between a first and a second electrode. At least the first reagent is electrically conductive and comprises the first electrode. The first reagent is fed to the plasma arc in a fluid form. A device for carrying out the method is provided. The device includes a parabolic shaped plasma chamber, a means for feeding at least the first reagent to the plasma chamber, and at least two electrodes for generating a plasma arc in the plasma chamber.
摘要翻译： PCT No.PCT / EP95 / 03513 371日期：1996年5月7日 102（e）日期1996年5月7日PCT提交1995年9月7日PCT公布。公开号WO96 / 07475 日期1996年3月14日一种通过使等离子体电弧中的至少两种试剂反应来连续制备粉末的方法，其中第一和第二试剂被供给到等离子体电弧，其通过施加在第一和第二电极。至少第一试剂是导电的并且包括第一电极。将第一试剂以流体形式送入等离子体电弧。提供了一种用于执行该方法的设备。该装置包括抛物线形等离子体室，用于将至少第一试剂供给到等离子体室的装置和用于在等离子体室中产生等离子体电弧的至少两个电极。

64. 发明授权

US5643642A Polymeric metal oxide materials and their formation and use 失效
标题翻译：聚合金属氧化物材料及其形成和用途
公开(公告)号：US5643642A
公开(公告)日：1997-07-01
申请号：US475090
申请日：1995-06-07
申请人： Tomoji Oishi , Ken Takahashi , Teteuo Nakazawa , Shigeru Tanaka , Tadahiko Miyoshi
发明人： Tomoji Oishi , Ken Takahashi , Teteuo Nakazawa , Shigeru Tanaka , Tadahiko Miyoshi
IPC分类号： C01B13/14 , B01J13/00 , B01J19/12 , C01B13/10 , C01B13/32 , C01B17/20 , C01B33/12 , C01G15/00 , C01G19/02 , C01G23/04 , C01G30/00 , C03C17/22 , C03C17/25 , C03C25/10 , C07F19/00 , F02B75/02 , G02B1/11 , G11B7/26 , H01B3/10 , H01G2/12 , H01G4/10 , H01G4/33 , H01L21/3105 , H01L21/316 , H01L21/3205 , H01L23/29 , H01L23/31 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , H05K1/03 , C09K19/00
CPC分类号： H01G2/12 , B01J13/0052 , C01B13/10 , C01B13/32 , C03C17/22 , C03C17/25 , C03C25/107 , C07F19/005 , H01G4/10 , H01L21/31058 , H01L21/316 , H01L21/3205 , H01L23/293 , H01L23/3135 , H05B33/10 , H05B33/22 , H05K1/0306 , C03C2217/21 , C03C2217/282 , C03C2218/113 , F02B2075/027 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L24/73 , H01L2924/01012 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01025 , H01L2924/01039 , H01L2924/01057 , H01L2924/01063 , H01L2924/01079 , H01L2924/10253 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , Y10S428/917 , Y10T428/1064 , Y10T428/1086 , Y10T428/24917 , Y10T428/24926 , Y10T428/265 , Y10T428/266 , Y10T428/2949 , Y10T428/31504
摘要： A method of treating a metal alkoxide solution to form metal oxide prepolymer molecules therein is characterized by irradiating the solution with light energy having a wavelength selected to break the metal-alkoxy group bond in said metal alkoxide, thereby to form the metal oxide prepolymer molecules in the solution. The prepolymer is converted into polymeric metal oxide gel. The stoichiometry of the oxide is high. A gel of carbon content below 4 atomic % can be achieved by the step of decarbonizing the gel, preferably using light to produce ozone.
摘要翻译：处理金属醇盐溶液以形成金属氧化物预聚物分子的方法的特征在于用所选择的波长的光能照射溶液以破坏所述金属醇盐中的金属 - 烷氧基键，由此形成金属氧化物预聚物分子解决方案。将预聚物转化成聚合金属氧化物凝胶。氧化物的化学计量比较高。碳含量低于4原子％的凝胶可以通过使凝胶脱碳，优选使用光来产生臭氧的步骤来实现。

65. 发明授权

US5628933A Transparent conductors comprising zinc-indium-oxide and methods for making films 失效
标题翻译：包含氧化铟锌的透明导体和制造薄膜的方法
公开(公告)号：US5628933A
公开(公告)日：1997-05-13
申请号：US622324
申请日：1996-03-26
申请人： Sue A. Carter , Robert J. Cava , Jueinai R. Kwo , Julia M. Phillips , Gordon A. Thomas
发明人： Sue A. Carter , Robert J. Cava , Jueinai R. Kwo , Julia M. Phillips , Gordon A. Thomas
IPC分类号： C01G15/00 , C01G17/00 , C01G19/00 , H01B1/08 , C01G9/02
CPC分类号： H01B1/08 , C01G15/00 , C01G15/006 , C01G17/006 , C01G19/006 , Y10S420/903
摘要： Applicant has discovered that aliovalently doped zinc-indium-oxide where In is 40-75% of the metal elements can achieve electrical conductivity comparable to wide band-gap semiconductors presently in use while exhibiting enhanced transparency in both the visible and infrared. The material can be doped to resistivity of less than 1 milliohm-cm by small quantifies of aliovalent dopants, such as tetravalent atoms. It can be deposited on glass substrates in amorphous and polycrystalline films.
摘要翻译：申请人已经发现，其中In是金属元素的40-75％的异氰酸盐掺杂的锌 - 铟氧化物可以实现与目前使用的宽带隙半导体相当的导电性，同时在可见光和红外线都显示增强的透明度。该材料可以通过小数量的诸如四价原子的低价掺杂剂掺杂到小于1毫欧姆 - 厘米的电阻率。它可以沉积在玻璃基板上的非晶和多晶膜中。

66. 发明授权

US5582909A Electro-conductive oxide particle and processes for its production 失效
公开(公告)号：US5582909A
公开(公告)日：1996-12-10
申请号：US343955
申请日：1994-11-17
申请人： Yoshitane Watanabe , Keitaro Suzuki , Motoko Iijima
发明人： Yoshitane Watanabe , Keitaro Suzuki , Motoko Iijima
IPC分类号： C01G15/00 , C01G30/00 , C01G30/02 , H01B1/08 , B32B9/00
CPC分类号： B82Y30/00 , C01G30/02 , H01B1/08 , C01P2002/72 , C01P2002/88 , C01P2004/04 , C01P2004/32 , C01P2004/62 , C01P2004/64 , C01P2004/82 , C01P2006/10 , C01P2006/12 , C01P2006/22 , C01P2006/40 , C01P2006/80 , Y10T428/25 , Y10T428/26 , Y10T428/261 , Y10T428/2982
摘要： An electro-conductive oxide particle comprising indium atoms, antimony atoms and oxygen atoms in a molar ratio of In:Sb:O being 1:0.02-1.25:1.55-4.63 and having a primary particle diameter of from 5 to 500 nm.

67. 发明授权

US5521148A Oxide superconducting material, process for preparing the same and applications thereof 失效
标题翻译：氧化物超导材料，其制备方法及其应用
公开(公告)号：US5521148A
公开(公告)日：1996-05-28
申请号：US771839
申请日：1991-10-08
申请人： Yasuko Torii , Kengo Ohkura , Toshihiro Kotani
发明人： Yasuko Torii , Kengo Ohkura , Toshihiro Kotani
IPC分类号： C04B35/00 , C01G1/00 , C01G15/00 , C01G29/00 , C04B35/45 , C04B35/653 , H01B12/04 , H01B13/00 , H01F1/00 , H01L39/12 , H01L39/24 , H01B12/00
CPC分类号： H01L39/248 , C04B35/4512 , C04B35/4517 , C04B35/4521 , C04B35/4525 , C04B35/653 , H01L39/126 , H01L39/2419 , Y10S505/729 , Y10S505/782 , Y10S505/783 , Y10S505/879
摘要： Novel superconducting oxide material containing compound oxide having a composition represented by the formula:[(Tl.sub.1-x Bi.sub.x).sub.1-p .alpha..sub.p ].sub.q Sr.sub.y Ca.sub.z Cu.sub.v O.sub.win which ".alpha." is at least one element selected from a group consisting of In, Sn, Sb, Pb, Y and lanthanide elements and "x", "y", "z", "p", "q", and "v" are numbers each satisfying respective range of 0.1.ltoreq.x.ltoreq.0.5, 0.5.ltoreq.y.ltoreq.4.0, 0.5.ltoreq.z.ltoreq.4.5, 0.ltoreq.p.ltoreq.0.6, 0.5.ltoreq.q.ltoreq.3.0, and 1.0.ltoreq.v.ltoreq.5.5.
摘要翻译：含有具有下式表示的组成的复合氧化物的新型超导氧化物材料：[（Tl1-xBix）1-p] p] qSryCazCuvOw其中“α”是选自由In，Sn，Sb， Pb，Y和镧系元素，“x”，“y”，“z”，“p”，“q”和“v”分别满足0.1≤x≤0.5,0.5， /=y

68. 发明授权

US5498594A (Hg or Pb)-Pr-Tl-Sr-Cu-O based superconductors 失效
标题翻译：（Hg或Pb）-Pr-Tl-Sr-Cu-O基超导体
公开(公告)号：US5498594A
公开(公告)日：1996-03-12
申请号：US198214
申请日：1994-02-17
申请人： Zhengzhi Sheng , John Meason , Ying Xin
发明人： Zhengzhi Sheng , John Meason , Ying Xin
IPC分类号： C01G1/00 , C01G15/00 , C01G21/00 , C04B35/00 , C04B35/45 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24 , C04B35/50
CPC分类号： H01L39/126 , C04B35/4504 , C04B35/4512 , C04B35/4517 , Y10S505/779 , Y10S505/783
摘要： A high temperature superconducting system comprising M--R--Tl--Sr--Cu--O wherein: M is at least one compound selected from the group consisting of Hg, Pb, K, and Al; and R represents rare earth metals. In one embodiment, a composition forms a 93K superconducting phase having the composition: M--R--Tl--Sr--Cu--O wherein: M is selected from the group consisting of Hg and Al; and R is a rare earth metal. In another embodiment, the composition comprises M--R--Tl--Sr--Cu--O wherein: M is selected from the group of Pb and/or K; and R is a rare earth metal.
摘要翻译：一种包含M-R-Tl-Sr-Cu-O的高温超导体系，其中：M是至少一种选自Hg，Pb，K和Al的化合物; R表示稀土金属。在一个实施方案中，组合物形成具有组成为M-R-Tl-Sr-Cu-O的93K超导相，其中：M选自Hg和Al; 而R是稀土金属。在另一个实施方案中，组合物包含M-R-Tl-Sr-Cu-O，其中：M选自Pb和/或K; 而R是稀土金属。

69. 发明授权

US5489573A Thallium-calcium-barium-copper-oxide superconductor with silver and method 失效
标题翻译：铊钙钡钡氧化物超导体与银和方法
公开(公告)号：US5489573A
公开(公告)日：1996-02-06
申请号：US291214
申请日：1994-08-16
申请人： John A. DeLuca , Pamela L. Karas
发明人： John A. DeLuca , Pamela L. Karas
IPC分类号： C01G1/00 , C01G15/00 , H01B12/00 , H01B13/00 , H01L39/24 , B32B9/00 , B05D5/12
CPC分类号： H01L39/2451 , Y10S428/93 , Y10S505/737 , Y10S505/742
摘要： A method is disclosed for forming polycrystalline thallium system superconductors having high current carrying capacity and high magnetic field behavior. A precursor deposit is formed comprised of silver, in an amount of about 1 to 20 mole percent of total metals in the precursor deposit, and the balance oxides of calcium, barium, and copper in ratios for forming the superconductor. The precursor deposit is annealed in an oxidizing atmosphere, and in the presence of a source of thallous oxide. The source of thallous oxide is heated to a first temperature selected to incorporate thallium into the deposit in an amount of about 6 to 22 mole percent of metals in the superconductor, and the precursor deposit is heated to a second temperature to form the superconductor.
摘要翻译：公开了用于形成具有高载流能力和高磁场行为的多晶铊系超导体的方法。由前体沉积物形成的前体沉积物，其量为前体沉积物中总金属的约1至20摩尔％的量，以及形成超导体的比例的钙，钡和铜的余量氧化物。前体沉积物在氧化气氛中并在氧化铊源的存在下退火。将氧化铊的来源加热至选择的第一温度以将铊掺入沉积物中，其量为超导体中金属的约6至22摩尔％，并将前体沉积物加热至第二温度以形成超导体。

70. 发明授权

US5482917A T1-M-Cu-O-F superconductors 失效
标题翻译： T1-M-Cu-O-F超导体
公开(公告)号：US5482917A
公开(公告)日：1996-01-09
申请号：US124908
申请日：1993-09-21
申请人： Munirpallam A. Subramanian
发明人： Munirpallam A. Subramanian
IPC分类号： C01G1/00 , C01G15/00 , C04B35/45 , H01B12/00 , H01L39/12 , H01L39/24
CPC分类号： H01L39/2419 , C04B35/4512 , Y10S505/783
摘要： A superconducting composition having the nominal formula TlM.sub.2 CuO.sub.5-x F.sub.x wherein M is Ba and x is from about 0.10 to about 0.65, or M is Sr and x is from about 0.35 to about 0.75 is disclosed.
摘要翻译：公开了具有标称式为TlM2CuO5-xFx的超导组合物，其中M为Ba，x为约0.10至约0.65，或M为Sr，x为约0.35至约0.75。

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